500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TMS27C128-12JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128-2JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128-15JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85 visit Texas Instruments
TMS27C128JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85 visit Texas Instruments
TMS27C128-15JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP visit Texas Instruments

128K x 8 ELECTRICALLY ERASABLE EPROM

Catalog Datasheet MFG & Type PDF Document Tags

winbond io

Abstract: 14-CS Preliminary W27L010 E lectronics Corp 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L010 is a high speed, low power consumption Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits. It requires only one supply in the range ot 3.0V to 3.6V in normal , electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special , Considerations EPROM power switching characteristics require careful device decoupling. System designers are
-
OCR Scan
winbond io 14-CS A0-A16 7S254
Abstract: s s }* ttü X P " îrie cfcionics C orp. W27C010 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27C010 provides an , b 1 8 y ô D i in , A ) \ in H Le -T T - i l A E J L Seating Plane X G l i C Jc À , A 35134. I Í . S.A. TE:.: Afja-SikiSSf¿8 r A X ; 4CS-544179S rAX: y;.; Sv;.í>c: ¿:¡ ;¡o¡o -
OCR Scan
372C5 S53-2
Abstract: W27E010 7 Electronics Corp. lYinbond 128K x 8 ELECTRICALLY ERASABLE EPROM G E N E R A L D E S C R IP T IO N The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The , A5 A4 A3 A2 A1 AO QO Q1 Q2 GND B L O C K D IA G R A M C c 1 Q 2 3 4 5 6 7 8 9 10 11 12 13 , 1 3 29 28 27 26 32-pin PL C C 25 24 23 22 1 1 1 2 1 7 a 9 0 21 5 6 7 8 9 10 11 12 1 13 4 G 1 -
OCR Scan
14X15

W27e256

Abstract: W29CO20 W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates , . 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E512 is a hrgh speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 x 8 bits that operates on a stngle 5 , ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E257 is a high-speed. low-power Electrically Erasable
Winbond Electronics
Original
W27e256 W29CO20 CA0008 w29c020-70 W27E257-12 W27EO AO-A16 W29EEO

Static RAM

Abstract: 1K x 8 static ram , 5V 128K x 8 CMOS EPROM 256K x 8 CMOS EPROM 32K x 8 CMOS EPROM 64K x 8 CMOS EPROM 32K x 8 CMOS EPROM, Dual Voltage 128K x 8 High-speed CMOS EPROM 256K x 8 High-speed CMOS EPROM 32K x 8 High-speed CMOS EPROM 64K x 8 High-speed CMOS EPROM 128K x 8 CMOS EPROM, Low Voltage 256K x 8 CMOS EPROM, Low Voltage 32K x 8 CMOS EPROM, Low Voltage 64K x 8 CMOS EPROM, Low Voltage 128K x 8 Flash Memory 256K x 8 Flash Memory 128K x 8 Flash Memory 1M x 16 (16-MBit) Dynamic RAM with EDO Page Mode 128K x 16 (2-MBit) Dynamic
Integrated Silicon Solution
Original
IS26F021A-5V Static RAM 1K x 8 static ram 64K x 8 BIT DYNAMIC RAM EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 32K 4K x 8 Synchronous Dynamic RAM IS25M080A IS22C011 IS22C012 IS22C020 IS22C040 IS22C111 IS23SC1604
Abstract: I 2 7 H C 1 2 8 U.V. 128K Erasable CMOS (16K X 8) EPROM DESCRIPTION The 27HC128 is a CMOS, high-speed Ultra-violet light erasable electrically pro grammable Read Only Memory. It is organized as 16,384 words of 8 bits and operates from a single 5V ± 10% power supply. All outputs offer 3-State opera tion , 853-0290 87920 P rodu ct S p e c ific a tio n 128K Erasable CMOS (16K X 8) EPROM 27HC128 U.V , e c ific a tio n 128K Erasable CMOS (16K X 8) EPROM 27HC128 U.V. AC ELECTRICAL -
OCR Scan
27HC128-55 27HC128-45

flash jedec dip 32-pin

Abstract: MSM28F101 BIT (128K x 8) CMOS FLASH MEMORY T-WJÉ,- \3>-ZQ> GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on board code updates. Flash erasable means an electrical erase of the full memory contents , ^s/byte typical 131,072 X 8-bit configuration TTL compatible Input/Output 12.0V programming JEDEC , pin compatible with EPROM devices and Read timings are fully compatible with EPROM operation
-
OCR Scan
flash jedec dip 32-pin E424G

flash jedec dip 32-pin

Abstract: MSM28F101 OKI semiconductor MSM28F101 1 M BIT (128K x 8) CMOS FLASH MEMORY GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on board code updates. Flash erasable means an electrical erase of the full , programming 10^s/byte typical 131,072 X 8-bit configuration TTL compatible Input/Output 12.0V programming , time is reduced. It is pin compatible with EPROM devices and Read timings are fully compatible with
-
OCR Scan

ST27C1000

Abstract: 8-Bit Microprocessors  SCS-THOMSON â (LKêïFGMtKgS ST27C1001 S-THOMSON _ 3QE D _1024K (128K x 8) CMOS UV ERASABLE PROM ADVANCED DATA â  8 BITS OUTPUTS â  FAST ACCESS TIME 120ns. â  LOW "CMOS" CONSUMPTION , Information at the end of the datasheet) The ST27C1001 is a high speed 1 Mbit UV erasable and electrically programmable EPROM ideally suited for 8-bit microprocessors systems requiring large programs. It is organized , replacement of 64K and 128K standard EPROM versions. â'¢ ST87C1011 is the same device as the ST27C1011 with
-
OCR Scan
ST27C1000 8-Bit Microprocessors 16KX8 DIP-32 ST87C1000
Abstract: OKI semiconductor MSM28F101 1 M BIT (128K x 8) CMOS FLASH MEMORY GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on-board code updates. Flash erasable means an electrical erase of the full , speed programming 10|is/byte typical 131,072 X 8-bit configuration · · · · · · TTL compatible Input , time is reduced. It is pin compatible with EPROM devices and Read timings are fully compatible with -
OCR Scan

LH571000-15

Abstract: LH571000J-12 LH571000/J CMOS 1M (128K x 8) OTPROM/EPROM FEATURES â'¢ 131,072 x 8 bit organization â , Packages 5-72 SHARP CMOS 1M (128K x 8) OTPROM/EPROM LH571000/J Figure 2. LH571000/J Block Diagram PIN , LH571000/J CMOS 1M (128K x 8) OTPROM/EPROM ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATING UNIT NOTE , (128K x 8) OTPROM/EPROM LH571000/J AC CHARACTERISTICS (Read Mode) (Vcc = 5 V ± 10%, Ta = 0 to +70°C , LH571000/J CMOS 1M (128K x 8) OTPROM/EPROM RECOMMENDED OPERATING CONDITIONS (Program Mode) (Ta = 25°C Â
-
OCR Scan
LH571000-15 LH571000J-12 LH571000J-15 sharp eprom "40 pin" otprom 1m sharp eprom LH571000J LH571000 DIP32-P-600 WDIP32-G-600

ST27C1000

Abstract: à 7 SGS-THOMSON *7Ã. M©Mai[L©êinM®]0©S ST27C1001 1024K (128K x 8) CMOS UV ERASABLE PROM ADVANCED DATA 8 BITS OUTPUTS FAST ACCESS TIME 120ns. LOW â' CMOSâ' CONSUMPTION 50mA (MAX , programmable EPROM ideal­ ly suited for 8-bit microprocessors systems requiring large programs. It is , ­ gurations. They are: â'¢ ST27C1011 is a page addressed 1024K (8 x 16K x 8) device, packaged in a 28 pin DIP for easy replacement of 64K and 128K standard EPROM versions. â'¢ ST87C1011 is the same device
-
OCR Scan

32-PIN

Abstract: LH571001-15 LH571001/J CMOS 1M (128K x 8) OTPROM/EPROM FEATURES â'¢ 131,072 x 8 bit organization â , Connections for CERDIP and DIP Packages 5-81 LH571001/J CMOS 1M (128K x 8) OTPROM/EPROM Vcc GND Vpp O0 O , +6.5 V +12.75 V NOTE: X = H or L, H = Vim. L = Vil 5-82 SHARP» CMOS 1M (128K x 8) OTPROM/EPROM , 0 ns SHARP 5-83 LH571001/J CMOS 1M (128K x 8) OTPROM/EPROM AC TEST CONDITIONS PARAMETER MODE , voltage VlH 2.4 Vcc + 0.3 V 5-84 SHARP» CMOS 1M (128K x 8) OTPROM/EPROM LH571001/J DC
-
OCR Scan
32-PIN LH571001J-15 LH571001-15 LH571001J-12 LH571001 LH571001J 5710Q1-6

ST27C1000

Abstract: 8-Bit Microprocessors . DESCRIPTION The ST27C1001 is a high speed 1 Mbit UV erasable and electrically programmable EPROM ideally , -7/ SGS -THOMSON M©eÅ"[L[i(§Tr[HMo©s ST27C1001 1024K (128Kx 8) CMOS UV ERASABLE PROM ADVANCED DATA 8 BITS OUTPUTS FAST ACCESS TIME 120ns. LOW "CMOS" CONSUMPTION 50mA (MAX.) PROGRAMMING , page addressed 1024K (8 x 16K x 8) device, packaged in a 28 pin DIP for easy replacement of 64K and 128K standard EPROM versions. â'¢ ST87C1011 is the same device as the ST27C1011 with latched addresses
-
OCR Scan
bull thomson 128kx O-00-015 S-10656

TMS27C128

Abstract: 27C128-12 · · · J AND N PACKAGES 128K EPROM Available With MIL-STD-883C Class B High-Reliability , -bit, ultraviolet-light erasable, electrically programmable read-only memories. A0­A13 E G GND NC NU PGM , . SNAP! Pulse programming The 128K EPROM and PROM are programmed using the TI SNAP! Pulse programming , ­REVISED JANUARY 1993 logic symbol PROM 16 384 × 8 EPROM 16 384 × 8 10 9 8 7 6 5 A0 A1 A2 A3 , TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC128 131 072
Texas Instruments
Original
27C128-12 27C128 Texas Instruments SMLS128E 27C/PC128-15 27C/PC128-20 27C/PC128-25 168-H

27128 pin diagram

Abstract: intel EPROM 27128 only, 131,072-bit ultraviolet erasable and electrically programmable read-only memory (EPROM). The , intéT 27128A ADVANCED 128K (16Kx8) UV ERASABLE PROM 200 nsec Typical Access Time - HMOS ll*-E , ProgrammingTM Algorithm - Fastest EPROM Programming inteligent ProgrammingTM Mode -Automated Programming , 250 ns. This is compatible with high-performance microprocessors, such as Intel's 8 MHz iAPX 186 , ? Gnd a7 4 / l« .O A 8 5 Vpp C 1 *? c 2 *6 A5 *4 A3 a2 Ai *0 o0 Ot Oí God A, C 3 *« c 4 *b C 5 A. C
-
OCR Scan
27128 pin diagram intel EPROM 27128 PROGRAM 27128 INTEL 27128 27128 block diagram 27128 eprom intel S7128A

FM27C010-Q120

Abstract: pm o2 pin detail FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM January 2000 FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 , FM27C010 1 www.fairchildsemi.com FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM , FM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM Programming Characteristics (Note 11
Fairchild Semiconductor
Original
FM27C010V120 FM27C010-Q120 pm o2 pin detail FM27C010Q120 576-B 128K- FM27C010Q FM27C010T FM27C010Q150 FM27C010T45

TMS27C128

Abstract: 27C128 Texas Instruments · · · J AND N PACKAGES 128K EPROM Available With MIL-STD-883C Class B High-Reliability , -bit, ultraviolet-light erasable, electrically programmable read-only memories. A0­A13 E G GND NC NU PGM , . SNAP! Pulse programming The 128K EPROM and PROM are programmed using the TI SNAP! Pulse programming , ­REVISED JANUARY 1993 logic symbol PROM 16 384 × 8 EPROM 16 384 × 8 10 9 8 7 6 5 A0 A1 A2 A3 , 77251­1443 L X P YY WW TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY
Texas Instruments
Original
27PC128 TI 27C128 PC128-15 SMLS128E-OCTOBER 27c128

27C128JL

Abstract: L27C128 7-12. Organization . . . 16K x 8 Single 5-V Power Supply Pin Compatible With Existing 128K MOS ROMs , Operating Temperature Ranges 128K EPROM Available With MIL-STD-883C Class B High-Reliabillty Processing , description The TMS27C128 series are 131 072-bit, ultra violet-light erasable, electrically programmable , V il CO D E vh vcc X X vcc X X * V|H DQ 1-D Q 8 Data Out Hl-Z Hl-Z , locations. Logic lows programmed into a PROM cannot be erased. SNAP! Pulse programming The 128K EPROM and
-
OCR Scan
27C128JL L27C128 27PC128NL SMJ27C128 tms27c128j TMS27C128S TMS27PC128S 27C128-100 27C128-120 27C/PC128-1 27C/PC128-2

8M-BIT CMOS SERIAL FLASH GENERAL

Abstract: 2048k eprom AT27BV010 128K x 8 120-150 ns 1M bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV1024 64K x 16 , x 8 90-150 ns 512K bit, 3-Volt EPROM Now AT27LV010A 128K x 8 90-150 ns 1M bit , 32K x 16 45-100 ns 512K, 5-Volt EPROM Now AT27C010,L 128K x 8 45-150 ns 1M bit, 5 , 128K x 16 55-150 ns 2M bit, 5-Volt EPROM Now AT27C040 512K x 8 70-150 ns 4M bit, 5 , -Volt to 3.6-Volt EPROM Now AT27BV040 512K x 8 150 ns 4M bit, 2.7-Volt to 3.6-Volt EPROM
Atmel
Original
AT27BV256 AT27BV512 AT27BV020 AT27BV4096 AT27BV800 8M-BIT CMOS SERIAL FLASH GENERAL 2048k eprom AT89c52 rfid spi flash 2048k AT45DB041 80C31 MICROCONTROLLER development board ATMEL 8/512K
Showing first 20 results.