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LT1128MN8 Linear Technology IC OP-AMP, PDIP8, PLASTIC, DIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1128MS8 Linear Technology IC OP-AMP, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1128MJ8 Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
X98014L128-3.3 Intersil Corporation SPECIALTY CONSUMER CIRCUIT, PQFP128, MQFP-128 visit Intersil
ISL22316UFU10Z-TK Intersil Corporation Low Noise, Low Power I2C® Bus, 128 Taps; DFN10, MSOP10; Temp Range: -40° to 125°C visit Intersil Buy
ISL22416UFRT10Z-TK Intersil Corporation Low Noise, Low Power, SPI® Bus, 128 Taps; DFN10, MSOP10; Temp Range: -40° to 125°C visit Intersil Buy

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128-M Datasheet

Part Manufacturer Description PDF Type
128MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original
128MD-40-800 Rambus Direct RDRAM 128-Mbit (256K x 16x32s) Original
128MD-50-711 Rambus Direct RDRAM Original
128MD-53-600 Rambus Direct RDRAM 128-Mbit (256K x 16x32s) Original
128MEG-x4/x8/x16-SDRAM-10 Micron 128 MEG: x4, x8, x16 SDRAM Original
12.8MM-19MM-25-5590H-05 3M Electronics Markets Materials Thermal - Pads, Sheets, Fans, Thermal Management, 12.8MM X 19MM 1=25/PK Original
12.8MM-19MM-25-8810 3M Electronics Markets Materials Tape, Tapes, Adhesives, 12.8MM X 19MM 1=25/PK Original
12.8MM-19MM-25-8815 3M Electronics Markets Materials Thermal - Pads, Sheets, Fans, Thermal Management, 12.8MM X 19MM 1=25/PK Original
128Ms-35-1066-C Rambus 128-Mbit (256K x 16x32s-C) Original
128Ms-40-1066-C Rambus Direct RDRAM for Short Channel 128-Mbit (256K x 16 x 32s-C) Original
128Ms-45-711-C Rambus Direct RDRAM for Short Channel 128-Mbit (256K x 16 x 32s-C) Original
128Ms-45-800-C Rambus 128-Mbit (256K x 16x32s-C) Original
128Mx72 SDRAM (Intel 1.2 ver Base) Samsung Electronics 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Original
128Mx72 SDRAM (Intel 1.2 ver Base) Samsung Electronics 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Original
128Mx72 SDRAM (Intel 1.2 ver Base) Samsung Electronics 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Original

128-M

Catalog Datasheet MFG & Type PDF Document Tags

KVR133X72RC3L

Abstract: PC133 Memory Module Specification KVR133X72RC3L/1024 1024MB 128M x 72-Bit PC133 Registered CL3 Low Profile ECC 168-Pin DIMM DESCRIPTION: This document describes ValueRAM's 128M x 72-bit (1024MB) CAS , this module include eighteen stacked 128M x 4-bit (thirty-six 64M x 4-bit) PC133 (8K refresh) SDRAM , .040 2 PLCS 168 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x 4-Bit 128M x
-
Original
KVR133X72RC3L 168-P VALUERAM0215-001

SDRAM

Abstract: 128Mx8 DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M) (512M) (512M) (512M) (512M) 128M x 4 64M x 8 64M x 8 32M x 16 32M x 16 ISSD128M4STB , ISSD16M16STC ISSD16M16STD (128M) (128M) (128M) (128M) (128M) 32M x 4 32M x 4 16M x 8 16M x 8 8M x 16 SDRAM SDRAM SDRAM SDRAM SDRAM (128M) (128M) (128M) (128M) (128M) 32M x 4 16M , DDR DRAM DDR DRAM (512M) (512M) (512M) (512M) 128M x 4 64M x 8 64M x 8 32M x 16
-
Original
ISAS512K16LTD ISSD64M4STB ISSD8M16STD SDRAM 128Mx8 SDRAM 128M 8M x 16 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM ISSD64M8STB ISSD64M8STC ISSD32M16STC ISSD32M16STD

sram

Abstract: 32X8 IC DRAM () Direct RambusTM DRAM 72M bits 128M bits 256M bits x4 x 16 64M bits x4 x 16 x8 x 32 x8 x4 x 16 128M bits x8 144M bits DRAM SRAM DRAM () DRAM () ROM MCP+SRAM 128M , 168DRAM DIMM 144 DRAM SO DIMM 128M bytes (x 64) 64M bytes (x 64) 32M bytes (x 64) DRAM Direct RambusTM DRAM SRAM ROM 168 DRAMDIMM 144 DRAM SO DIMM MCP+SRAM 184 Direct Rambus TM RIMM TM 128M bytes 64M bytes Unbuffered 256M bytes (x 72, x 64) 128M bytes (x 72, x 64) 64M bytes (x 72, x 64) 32M bytes
NEC
Original
sram 32X8 4M x 16 SRAM X13769XJ2V0CD00

512M 29

Abstract: 1g mcp : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank , 28 : 128M 64 : 64M - MLC De-Muxed 10 : 512M, 16Bank / 33) 12 : 512M, 16Bank / 11) 54 : 256M , 27 : 128M, 2CS - Multiplexed DDP 11 : 512M, 1CS / 32Bank 56 : 256M, 16Bank - Dual Bank Boot , : 256M, 16Bank 27 : 128M, 2CS 32 : 32M 80 : 8M Notes 1) Frequency : 66/83 MHz 2) Frequency , , 4Bank 27 : 128M, 1Bank 29 : 128M, 2CS / 4Bank 33 : 32M, 8Bank 56 : 256M, 4Bank 65 : 64M, 8Bank
Samsung Electronics
Original
512M 29 1g mcp OneNAND mcp 16-BANK sram 128m mrs marking 108MH 133MH

PC3-10600R-09-10-E1-P1

Abstract: PC3-10600R-09-10-E1-D2 SDRAM (1.5V VDD) 5. Depth 32 : 32M 64 : 64M 28 : 128M 56 : 256M 51 : 512M 1G : 1G 2G : 2G 33 65 29 57 52 1K 2K : 32M (for 128Mb/512Mb) : 64M (for 128Mb/512Mb) : 128M (for 128Mb/512Mb) : 256M (for 512Mb/2Gb , )F7/F8/H9 Org. 256M x 4 128M x 8 64M x 16 256M x 4 128M x 8 256M x 4 128M x 8 256M x 4 128M x 8 512M x 4 256M x 8 128M x 16 512M x 4 256M x 8 512M x 4 256M x 8 512M x 4 256M x 8 512M x 4 256M x 8 1G x 4 , Guide 4.1 240Pin DDR3 Unbuffered DIMM (1.5V Product) 240Pin DDR3 Unbuffered DIMM Org. 128Mx 64 Density
Samsung Electronics
Original
PC3-10600R-09-10-E1-P1 PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R samsung DDR3 SDRAM 2GB M393B5170EH1

LDM-1A

Abstract: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits , , DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel , PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module STATE DIAGRAM FIGURE 2
Logic Devices
Original
LDM-1A DDR3-133 DDR3-1333 G32BG2 L9D3162G32BG2I10

K4B4G0846D

Abstract: PC3-10600R-09-10-E1-D2 SDRAM (1.5V VDD) 5. Depth 32 : 32M 64 : 64M 28 : 128M 56 : 256M 51 : 512M 1G: 1G 2G: 2G 4G: 4G 33 : 32M (for 128Mb/512Mb) 65 : 64M (for 128Mb/512Mb) 29 : 128M (for 128Mb/512Mb) 57 : 256M , K4B1G0846F HC(L)F8/H9/K0 128M x 8 K4B1G0446F HY(L)F8/H9 256M x 4 K4B1G0846F 2Gb C-die 8Banks 256M x 4 K4B1G0846G BC(L)F8/H9/K0/MA 128M x 8 K4B1G0446G BY(L)F8/H9/K0 256M x 4 BY(L)F8/H9/K0 128M x 8 K4B2G0446C 8Banks 128M x 8 BC(L)F8/H9/K0/MA K4B1G0846G
Samsung Electronics
Original
K4B4G0846D M393B1K70DH0 M471B5273DH0 k4b4g0446d M393B5270DH0 M471B5773DH0

Flash Memory

Abstract: sram 128m category Main menu IC Memory Synchronous DRAM (Single Data Rate) Direct RambusTM DRAM 72M bits 128M bits 256M bits x4 x 16 64M bits x4 x 16 x8 x 32 x8 x4 128M bits x8 144M bits x 16 Other , (Single Data Rate) Mask ROM Flash memory MCP (Flash memory + SRAM) 128M bits x4 x 16 x8 x4 x 16 , -pin Synchronous DRAM SO DIMM 128M bytes (x 64) 64M bytes (x 64) 32M bytes (x 64) Other memories Synchronous DRAM , ) Flash memory MCP (Flash memory + SRAM) 184-pin Direct Rambus TM RIMMTM 128M bytes 64M bytes
NEC
Original
Flash Memory 1m x 16 memory module mask rom

Transcend Flash Drive

Abstract: transcend ultra flash memory ) 128M ~ 4GB 128M ~ 4GB Description Features With an IDE interface and strong data retention · , -Piin IIDE Fllash Modulle (Horiizontall) Transcend 44-P n DE F ash Modu e (Hor zonta ) 128M ~ 4GB 128M , Fllash Modulle (Horiizontall) Transcend 44-P n DE F ash Modu e (Hor zonta ) 128M ~ 4GB 128M ~ 4GB , ) TS128MDOM44H 128MB 978 8 32 TS256MDOM44H 256MB 978 16 32 TS512MDOM44H 512MB , (Horiizontall) Transcend 44-P n DE F ash Modu e (Hor zonta ) 128M ~ 4GB 128M ~ 4GB Package Dimensions Below
Transcend Information
Original
Transcend Flash Drive transcend ultra flash memory transcend flash memory 4gb connector ide 40 pin to 44 pin DD10 DD11 32M-512M

PC100

Abstract: 4MX64 * 128M 128M 128M 128M 128M 128M 128M* 128M* 256M* 256M* Format 4Mx64 4Mx64 4Mx64 8Mx64 8Mx64 8Mx64 8Mx72
-
Original
MC-458DA726F-A80 PC100 4MX64 A10B 8Mx64 168PIN MC-454CB645FA-A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F-A10B MC-458CB646F-A10

TSOP 66 Package

Abstract: Sep. '02 Preliminary 128M Synchronous DRAM Contents are subject to change without notice , / 40 CTP M2V28S20/ 30/ 40 CKT SDRAM (Rev.0.3E) Single Data Rate Sep. '02 Preliminary 128M , CTP M2V28S20/ 30/ 40 CKT SDRAM (Rev.0.3E) Single Data Rate Sep. '02 Preliminary 128M , Preliminary 128M Synchronous DRAM 64-pin sTSOP Package Outline .05 0.125 +0.02 -0 33 64 *2 , 128M Synchronous DRAM BLOCK DIAGRAM DQ0-3 (x4) , 0-7 (x8) , 0 - 15 (x16) I/O Buffer Memory
Mitsubishi
Original
TSOP 66 Package M2V28S20CTP/ M2V28S30CTP/ M2V28S40CTP/ M2V28S20/30/40C M2V28S20/30/40CTP/KT 100MH

44s16030

Abstract: 54-PIN KM432S2030BT KM44S32030T 128M 1st KM48S16030T KM416S8030T KM44S64230AT 256M 2nd KM48S32230AT KM416S16230AT , 4tti 16M 4th 64M 3rd 64M 3rd 64M 3rd 64M 3rd 64M 3rd 64M 3rd 128M 1st 128M 1st 128M 1st 128M 1st 128M 1st 128M 1st 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V G 8/G H , 4th 64M 3rd 64M 3rd 64M 3rd 128M 1st 128M 1st 128M 1st 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V FO , *18pcs 16Mx8*18pcs 64Mx4*18pcs 64M 3rd 64M 3rd 64M 3rd 64M 3rd 128M 1st 128M 1st 128M 1st 128M 1st 3.3V
-
OCR Scan
S823B 44s16030 54-PIN km48s2020ct u108h 4MX16 KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT

EM828164PA

Abstract: EM828164PA-60 Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM Document Title 128M: 8M x 16 Mobile SDRAM , Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM 128M : 8M x 16bit Mobile SDRAM FEATURES · · · · , , military, vehicular or undersea repeater use. 2 Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 , Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM Device Operation Simplified , Power-Down REFS = Enter Self Refresh 4 Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 Mobile
Emerging Memory & Logic Solutions
Original
EM828164PA-60 EM828164PA-75 EM828164PA-90 166MH 143MH 125MH 111MH

IBM 1Mx4

Abstract: 1MX16 4M x4 2M x8 4M x4 1K/12Bms 1K/16ms 1K/128ms 1K/128ms 1K/128ms 4K /128m s 1K/128ms 1K/128ms 1K/128ms 1K/128ms 1KV128ms 4K /128m s 2K /128m s 4K /128m s 1K/128ms 4K/64m s 4K /128m s 2K /128m s 4K/64m s 2K /128m s 2K /128m s Low Power Normal Low Power Low pow er Self Refresh Low Power Low Power S elf
-
OCR Scan
1MX16 IBM 1Mx4 364C120C KMM364C124A C-421000AA64 HB56A164EJ 364V120C 364V124A

Kentron Technologies

Abstract: DDR DIMM pinout micron 184 128M / 256M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 1024 Mega Byte (128M x 72) DDR , RAM module organized as 128M /256M x 72 in a 184-pin Dual In-Line Memory Module (DIMM) package. The module utilizes thirty-six (36) 64M / 128M x4 DDR SDRAM (64ms Refresh) devices in a TSOP II 400 mil , : 1024 MB (128M x 72) 2048 MB (256M x 72) Cycle time: 7.5ns (133 MHz) 6.0ns (166 MHz) Data Rate , /988-9100 Fax 978/988-5550 128M / 256M X 72 REGISTERED DDR DIMM Operating Features: The SDRAM DDR
Kentron Technologies
Original
PC2100 DDR266 PC2700 Kentron Technologies DDR DIMM pinout micron 184 ddr dimm pinout A 2630 circuit diagram of ddr ram ELPIDA PC2700 KT12872DRN KT25672DRN

K4T1G164QF

Abstract: 1GB DDR2 4 banks 1G : 1G 33 65 29 57 52 1K : 32M (for 128Mb/512Mb) : 64M (for 128Mb/512Mb) : 128M (for , M391T2863QZ(H)3 M391T2863EH3 1GB Internal Banks Q-die 128M x 8 * M378T2863QZ(H)S 128Mx 64 , 4Banks HCE7/F7/E6 128M x 4 K4T51083QI HCE7/F7/E6 64M x 8 K4T51163QI K4T1G044QQ 8Banks HC(L)E7/F7/E6 256M x 4 K4T1G084QQ HC(L)E7/F7/E6 128M x 8 K4T1G164QQ 1Gb Q-die , HC(L)E7/F7/E6 BCE7/F7/E6 256M x 4 K4T1G084QF BCE7/F7/E6 128M x 8 K4T1G164QF 1Gb
Samsung Electronics
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1GB DDR2 4 banks K4T51083QI-HCE7 K4T1G164QQ-HC m470t5663 K4T1G164QE samsung ddr2 240pin 1gb 10MAX

transistor SC710

Abstract: EV Board .4 1.2.1 128M Flash , .13 3.5 4 710EV BOARD_V6 + 128M , ) (64M) (128M) (64M) (7x5/710) OK OK OK OK 710 EV board_V6 OK OK OK , Flash128_V1 board has two 64M Flash and can support Max to 128M or Half to 64M. 1.2.1 128M Flash V 1.1 , CE2 in Flash128_V1 board for 128M, and select "64M*2 Flash Board" in Download Window V1.40. 1.2.2
SONiX Technology
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transistor SC710 EV Board FLASH32 SC710 SNC710 FLASH128 SNC700

512m pc133 SDRAM DIMM 168

Abstract: 512m pc133 SDRAM DIMM HYS 64/72V128220GU SDRAM-Modules 3.3 V 128M x 64/72-Bit, 1024 MByte SDRAM Modules 168 , -333 & PC133-222 versions · Auto Refresh (CBR) and Self Refresh · Two bank 128M × 64 and 128M × 72 , -pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 128M × 64 and 128M × 72 in two , HYS 64128220GU-7-A PC133-222-520 L-DIM-168-30 PC133 128M × 64 2 bank 1.25" SDRAM module HYS 72V128220GU-7-A PC133-222-520 L-DIM-168-30 PC133 128M × 72 2 bank 1.25" SDRAM module HYS 64V128220GU-7.5
Infineon Technologies
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PC100-222 PC133-333 512m pc133 SDRAM DIMM 168 512m pc133 SDRAM DIMM 64/72-B TSOPII-54 MO-161-BA 64V128220GU

DA65

Abstract: K4D263238M-QC40 Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate , ) Target 128M DDR SDRAM K4D263238M Revision History Revision 0.3 (June 8, 2000) · Removed Block , - 2 - Rev. 0.3 (Jun. 2000) Target 128M DDR SDRAM K4D263238M 1M x 32Bit x 4 Banks Double , of high performance memory system applications. - 3 - Rev. 0.3 (Jun. 2000) Target 128M DDR , Connect Low RFU Reserved for Future Use - 4 - Rev. 0.3 (Jun. 2000) Target 128M DDR SDRAM
Samsung Electronics
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DA65 K4D263238M-QC40 K4D263238 K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 250MH

ddr dimm pinout

Abstract: circuit diagram of ddr ram 128M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 1 Giga Byte (128M x 72) DDR SDRAM Low , performance 1024 Megabyte Registered synchronous dynamic RAM module organized as 128M x 72 in a 184-pin Dual , : High density: Cycle time: 1024 MB (128M x 72) 7.5ns (133 MHz) 10ns , Wilmington, MA 01887 Phone: 978/988-9100 Fax 978/988-5550 www.kentrontech.com 128M X 72 REGISTERED DDR , Operating Temperature Kentron Technologies, Inc. (978) 988-9100 Rev. (3/02) Page 2 128M X 72
Kentron Technologies
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DDR200 DDR DIMM 184 pinout DDR dimm PC1600

ddr3 pinout

Abstract: DQ 15 DQ 0 D0 128M x16 DQ 16 LDM0 UDM0 CS1 CK1 CK1\ LDQS1 LDQS1\ UDQS1 UDQS1 , DQ 31 DQ 0 DQ 32 DQ 7 DQ 39 DQ 8 DQ 40 DQ 15 DQ 47 DQ 0 D1 128M x16 , , BA RST\ VSS VSSQ VDD VDDQ D2 128M x16 LDM2 UDM2 CS3 CK3 CK3\ LDQS3 LDQS3\ UDQS3 UDQS3\ CKE3 CAS3\ RAS3\ WE3\ LDM3 A, BA RST\ VSS VSSQ VDD VDDQ D3 128M x16 DQ 7 DQ , DQ 15 DQ 0 D0 128M x16 DQ 16 LDM0 UDM0 CS1 CK1 CK1\ LDQS1 LDQS1\ UDQS1 UDQS1
Logic Devices
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ddr3 pinout L9D340G64BG5 L9D345G72BG5 L9D350G80BG5 L9D380G64BG5 L9D390G72BG5 L9D3100G80BG5
Abstract: efer to Micron Technical Note TN-48-05 128M b: x4, x8, x16 SD R AM 1 2 8M S D R A M .p 65 - R ev. 3 , programmable READ or WRITE burst lengths of 1 ,2 ,4 or 8 locations, or the full page, 128M b: x4, x8, x16 , 10 10 11 11 12 12 12 12 12 12 12 12 12 13 13 14 14 15 21 23 23 128M b: x4, x8 , | FUNCTIONAL BLOCK DIAGRAM 32 Meg x 4 SDRAM 128M b: x4, x8, x16 SD R AM 1 2 8M S D R A M .p 65 - R ev. 3 , SDRAM 128M b: x4, x8, x16 SD R AM 1 2 8M S D R A M .p 65 - R ev. 3/99 M icro n T e ch no log y -
OCR Scan
T48LC32M T48LC16M T48LC8M PC100- PC133-
Abstract: NT1GD64S8HA0F / NT1GD64S8HB0G NT1GD64S8PA0F 1GB : 128M x 64 (Non-ECC), 128M x 72 (ECC) PC3200 , TECHNOLOGY CORPORATION NT1GD64S8HA0F / NT1GD64S8HB0G NT1GD64S8PA0F 1GB : 128M x 64 (Non-ECC), 128M x 72 , . Preliminary © NANYA TECHNOLOGY CORPORATION NT1GD64S8HA0F / NT1GD64S8HB0G NT1GD64S8PA0F 1GB : 128M x 64 (Non-ECC), 128M x 72 (ECC) PC3200 / PC2700 / PC2100 Unbuffered DDR DIMM Input/Output Functional Description , NT1GD64S8HA0F / NT1GD64S8HB0G NT1GD64S8PA0F 1GB : 128M x 64 (Non-ECC), 128M x 72 (ECC) PC3200 / PC2700 / PC2100 -
OCR Scan
MT48LC32M4A1 MT48LC16M8A1 MT48LC8M16A1/A2

1gb ddr 266 pc2100 ecc unbuffered

Abstract: 4Banks HCE7/F7/E6 128M x 4 K4T51083QI HCE7/F7/E6 64M x 8 K4T51163QI K4T1G044QQ 8Banks HC(L)E7/F7/E6 256M x 4 K4T1G084QQ HC(L)E7/F7/E6 128M x 8 K4T1G164QQ 1Gb Q-die , HC(L)E7/F7/E6 BCE7/F7/E6 256M x 4 K4T1G084QF BCE7/F7/E6 128M x 8 K4T1G164QF 1Gb F-die 128M x 8 K4T1G044QF 8Banks 256M x 4 HC(L)E7/F7/E6 K4T1G164QE 1Gb E-die HC , SODIMM Z J Q H M E B T : DDR2 SDRAM 32 : 32M 64 : 64M 28 : 128M 56 : 256M 51 : 512M
Nanya Technology
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1gb ddr 266 pc2100 ecc unbuffered DDR400/333/266 DDR400A/B NT1GD72S8

512m pc133 SDRAM DIMM

Abstract: TSOP 66 Package Sep. '02 Preliminary 128M Synchronous DRAM Contents are subject to change without notice , / 40 CTP M2V28S20/ 30/ 40 CKT SDRAM (Rev.0.3E) Single Data Rate Sep. '02 Preliminary 128M , CTP M2V28S20/ 30/ 40 CKT SDRAM (Rev.0.3E) Single Data Rate Sep. '02 Preliminary 128M , Preliminary 128M Synchronous DRAM 64-pin sTSOP Package Outline .05 0.125 +0.02 -0 33 64 *2 , 128M Synchronous DRAM BLOCK DIAGRAM DQ0-3 (x4) , 0-7 (x8) , 0 - 15 (x16) I/O Buffer Memory
Infineon Technologies
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TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 DDR400 B166-H8399-X-X-7600

V28S40

Abstract: 128M Synchronous DRAM SDRAM (Rev. 0.60E) Oct. '98 Prelim inary MITSUBISHI LSIs , MITSUBISHI ELECTRIC 1 128M Synchronous DRAM SDRAM (Rev. 0.60E) Oct. '98 Preliminary , Output MITSUBISHI ELECTRIC 2 128M Synchronous DRAM SDRAM (Rev. 0.60E) Oct. '98 , 28 : 128Mbit V : LVTTL MITSUBISHI ELECTRIC 3 128M Synchronous DRAM SDRAM (Rev. O.6 OE , are supplied to the Output Buffers only. MITSUBISHI ELECTRIC 4 128M Synchronous DRAM
Mitsubishi
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V28S40 M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD
Abstract: Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM Document Title 128M: 8M x 16 Mobile SDRAM , Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM 128M : 8M x 16bit Mobile SDRAM FEATURES · · · · , , military, vehicular or undersea repeater use. 2 Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 , Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 Mobile SDRAM Device Operation Simplified , Power-Down REFS = Enter Self Refresh 4 Rev 0.1 Preliminary EM828164PA 128M: 8M x 16 Mobile -
OCR Scan
M2V28S20TP M2V28S30TP M2V28S40TP M2V28S20/30/40TP V28S20 V28S30
Abstract: 128M Synchronous DRAM SDRAM (Rev. 1.3E) (4-BANK x 8,388,608-WORD x 4-BIT) Aug. '00 (4 , MITSUBISHI ELECTRIC 1 128M Synchronous DRAM SDRAM (Rev. 1.3E) (4-BANK x 8,388,608-WORD x 4 , : Ground for Output MITSUBISHI ELECTRIC 2 128M Synchronous DRAM SDRAM (Rev. 1.3E) (4-BANK x 8 , : 128Mbit Interface V : LVTTL Mitsubishi DRAM MITSUBISHI ELECTRIC 3 128M Synchronous DRAM , . MITSUBISHI ELECTRIC 4 128M Synchronous DRAM SDRAM (Rev. 1.3E) (4-BANK x 8,388,608-WORD x 4 -
OCR Scan
M2V28S20T 16-BIT
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