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126-190 Datasheet, Circuit, PDF, & Application Note Results




Datasheet Search Results 1 - 1 of about 1 for 126-190
ID 1 126-190 Bivar, Inc. Perm-O-Pads - TO-5, TO-18 and T-1 3/32 (5mm) LED Mounts 580.6 Kb, 1 Pages. Buy Now!

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Contextual Datasheet Results 1 - 8 of about 8 for 126-190
ID 1 First line: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Turn-Off Delay Time td off 126 190. Fall Time tf. VDD = − 10V, RL = 15Ω ID ≅ − 1A, VGEN = − 4.5V, RG = 6Ω. 46 90. ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject ..  datasheet abstract.. 172.58 Kb 3 Pages PDF Download
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ID 2 First line: perm-o-pads TO-18 T-13 / 32 5mm Mounts Universal TO-5 TO-18 T-13 / 4 5mm Mounts Material Abstract: .. 126-190 .190 4.8 .030 .76 .080 2.0 126-200 .200 5.1 .030 .76 .085 2.2 126-210 .210 5.3 .030 .76 .090 2.3 126-220 .220 5.6 .030 .76 .095 2.4 126-230 .230 5.8 .030 .76 ..  datasheet abstract.. 580.6 Kb 1 Pages PDF Download
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ID 3 First line: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Turn-Off Delay Time td off 126 190. Fall Time tf. VDD = −10 V, RL = 15 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω. 46 90. ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject ..  datasheet abstract.. 212.86 Kb 4 Pages PDF Download
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ID 4 First line: Preliminary data SPP80N06S2-05 SPB80N06S2-05 OptiMOS=Power-Transistor Features N-Channel Product Summary Drain source voltage Abstract: .. Rise time tr - 126 190. Turn-off delay time td off - 54 80. Fall time tf - 20 30. Gate Charge Characteristics. Gate to source charge Qgs VDD=44V, ID=80A - 25 30 nC. Gate to drain charge Qgd - 47 60. Gate charge ..  datasheet abstract.. 90.98 Kb 8 Pages PDF Download
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ID 5 First line: 93997A IRF5806 HEXFET Power MOSFET Ultra On-Resistance P-Channel MOSFET Surface Mount Available Abstract: .. tf Fall Time ––– 126 190 RD = 10Ω. Ciss Input Capacitance ––– 594 ––– VGS = 0V. Coss Output Capacitance ––– 114 ––– pF VDS = -15V. Crss Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz. Electrical Characteristics ..  datasheet abstract.. 121.01 Kb 9 Pages PDF Download
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ID 6 First line: IRF5806 HEXFET Power MOSFET Trench Technology Ultra On-Resistance P-Channel MOSFET Available Tape Abstract: .. tf Fall Time ‐‐‐ 126 190 RD = 10Ω Ç. Ciss Input Capacitance ‐‐‐ 594 ‐‐‐ VGS = 0V. Coss Output Capacitance ‐‐‐ 114 ‐‐‐ pF VDS = -15V. Crss Reverse Transfer Capacitance ‐‐‐ 87 ‐‐‐ ƒ = 1.0MHz. Electrical Characteristics ..  datasheet abstract.. 220.35 Kb 8 Pages PDF Download
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ID 7 First line: ST72340 ST72344 ST72345 8-BIT WITH FLASH MEMORY 10-BIT 16-BIT TIMERS PRELIMINARY DATA Abstract: .. 126/190. I2C BUS INTERFACE Cont’d I2C CLOCK CONTROL REGISTER CCR Read / Write Reset Value: 0000 0000 00h Bit 7 = FM/SM Fast/Standard I2C mode. This bit is set and cleared by software. It is not ..  datasheet abstract.. 1617.46 Kb 190 Pages

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ID 8 First line: ST90158 ST90135 8 / 16-BIT FAMILY WITH ROM / OTP / EPROM Register File based Core Architecture with Abstract: .. 126/190. ST90158 - MULTIFUNCTION TIMER MFT MULTIFUNCTION TIMER Cont’d INTERRUPT/DMA CONTROL REGISTER IDCR R243 - Read/Write Register Page: 9 Reset value: 1100 0111 C7h Bit 7 = CPE: Capture ..  datasheet abstract.. 1148.56 Kb 190 Pages PDF Download
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