126-150 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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1 - 1 of about 1 for 126-150

Bivar, Inc.

Perm-O-Pads - TO-5, TO-18 and T-1 3/32 (5mm) LED Mounts

580.6 Kb, 1 Pages.

Contextual Datasheet Results		1 - 50 of about 92 for 126-150
	First line: SPA-0301-27 Features Frequency Range Cost Industry Standard package Available Tape-and -Reel Ohms Abstract: .. 1 26 51 76 101 126 150 175 200 225 250. Frequency MHz dB. S11. S22. S33. S32. Insertion Loss and Am plitude Balance. -4. -3.8. -3.6. -3.4. -3.2. -3. 1 26 51 76 101 126 150 175 200 225 250. Frequency MHz dB. S21. S31. .. datasheet abstract..	45.74 Kb	1 Pages

	First line: IGBT Designers Manual Selection Guide Single Switch without Diode Current Rating 5-10 Abstract: .. 126-150 IRGKIN100K06 IRGKIN075M12. IRGKIN100M06 IRGKI115U06. 151-175 IRGKI140U06 IRGKIN100M12. IRGKI165F06 IRGKI165F06. IRGKIN150K06. 176-200 IRGKI200F06. IRGKIN150M06. 201-300. 301-400 .. datasheet abstract..	26.74 Kb	3 Pages

	First line: Filter Bandwidth Part Number SF0070BA03042S Micro Networks Clark Street Worcester tel 508-852-5400 Abstract: .. Rejection, 126-150 MHz 40 43 dB. Passband Ripple 0.8 1.5 dB. Phase Deviation from Linear3 7 11 deg. Group Delay Variation3 70 80 ns. Absolute Delay 1.08 μs. Substrate LiNbO3 -. Temperature Coefficient .. datasheet abstract..	219.79 Kb	2 Pages

	First line: perm-o-pads TO-18 T-13 / 32 5mm Mounts Universal TO-5 TO-18 T-13 / 4 5mm Mounts Material Abstract: .. 126-150 .150 3.8 .030 .76 .060 1.5 126-160 .160 4.1 .030 .76 .065 1.7 126-170 .170 4.3 .030 .76 .070 1.8 126-180 .180 4.6 .030 .76 .075 1.9 126-190 .190 4.8 .030 .76 .. datasheet abstract..	580.6 Kb	1 Pages

	First line: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Abstract: .. RDS on VGS = 10 V, ID = ID90, Note 1 126 150 mΩ. VGS = 10 V, ID = ID90, Note 1 TJ = 125°C 297 mΩ. VGS th VDS = VGS, ID = 2 mA 2 4 V. IDSS VDS = VDSS TJ = 25° C 50μA. VGS = 0 V TJ = 125° C 10μA. IGSS VGS = ±20 VDC, VDS = 0 ±200 nA .. datasheet abstract..	496.33 Kb	2 Pages

	First line: Si6954ADQ Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY rDS on Abstract: .. 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Vishay Siliconix New Product. www.siliconix.com FaxBack 408-970 .. datasheet abstract..	71.46 Kb	4 Pages

	First line: Si6926ADQ Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS on Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay .. datasheet abstract..	67.07 Kb	5 Pages

	First line: Si6954ADQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY rDS on TSSOP-8 Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Vishay Siliconix. www.siliconix.com FaxBack 408-970-5600 .. datasheet abstract..	60.33 Kb	4 Pages

	First line: Si6954ADQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY rDS on TSSOP-8 Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Vishay Siliconix. www.siliconix.com FaxBack 408-970-5600 .. datasheet abstract..	89.78 Kb	5 Pages

	First line: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY RDS on FEATURES Abstract: .. °C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. RoHS COMPLIANT. www.vishay.com 2. Document Number: 72754 S-81056-Rev. B, 12-May-08. Vishay Siliconix. Si6926ADQ .. datasheet abstract..	113.74 Kb	6 Pages

	First line: Si6954ADQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY RDS on FEATURES Abstract: .. °C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. RoHS COMPLIANT. www.vishay.com 2. Document Number: 71130 S-81221-Rev. C, 02-Jun-08. Vishay Siliconix. Si6954ADQ .. datasheet abstract..	106.17 Kb	5 Pages

	First line: Si6926AEDQ Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch Abstract: .. 126 150. C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Notes a. Surface Mounted on FR4 Board. Si6926AEDQ Vishay Siliconix New Product. Document Number: 73090 S-41519—Rev. A, 11 .. datasheet abstract..	66.55 Kb	6 Pages

	First line: Switch Reliability Report March International Rectifier Table Contents Introduction Environmental Stress Failure Abstract: .. IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260N 112 175 160 50 96 0 2.5E+06 370. IRFP90N20D 111 175 160 80 716 0 3.0E+07 .. datasheet abstract..	131.52 Kb	45 Pages

	First line: GMF05C-HS3 Vishay Semiconductors 5-Line Protection Diode Array LLP75-6A Features Ultra compact LLP75-6A Abstract: .. at VR = 0 V; f = 1 MHz CD 126 150 pF. at VR = 2.5 V; f = 1 MHz CD 76 pF. L1. L2. L3. 20740. 1. 3. 6. 5. 4. 2. www.vishay.com. 4. Document Number 85654. Rev. 1.8, 23-Sep-08. GMF05C-HS3. Vishay Semiconductors. For technical support .. datasheet abstract..	278.65 Kb	8 Pages

	First line: GMF05C-HSF Vishay Semiconductors 5-Line Protection Diode Array LLP75-6L Features Ultra compact LLP75-6L Abstract: .. at VR = 0 V; f = 1 MHz CD 126 150 pF. at VR = 2.5 V; f = 1 MHz CD 76 pF. L1. L2. L3. 20740. 1. 3. 6. 5. 4. 2. www.vishay.com. 4. Document Number 81731. Rev. 1.1, 22-Sep-08. GMF05C-HSF. Vishay Semiconductors. For technical support .. datasheet abstract..	276.41 Kb	8 Pages

	First line: Si6926AEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT Abstract: .. °C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Document Number: 73090 S-81056-Rev. B, 12-May-08. www.vishay.com 3. Vishay Siliconix Si6926AEDQ. Notes: a .. datasheet abstract..	123.71 Kb	7 Pages

	First line: Semiconductor A-5135 A-5127A HA-5177 September File Number 2MHz Ultra-Low Offset Voltage Operational Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. HA-5177. 3. OUTPUT CHARACTERISTICS .. datasheet abstract..	435.14 Kb	9 Pages

	First line: November MMEND SIGNS HA-5177 2MHz Ultra-Low Offset Voltage Operational Amplifier Description HA-5177 Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. OUTPUT CHARACTERISTICS. Output Voltage .. datasheet abstract..	456.08 Kb	9 Pages

	First line: HA-5135Center 5127A pport il.co echnica w.inters ntac TERSIL 8-IN 1-88 HA-5177 September Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. HA-5177. 3. OUTPUT CHARACTERISTICS .. datasheet abstract..	540.7 Kb	10 Pages

	First line: Protection devices Selection guide August www.st.com / protection Transil Transient voltage suppressors clamping diodes Abstract: .. SMP100MC-140 100 126 150 500 140 5 180 150 60 SMB. SMP100MC-160 100 144 150 500 160 5 205 150 50 SMB. SMP100MC-200 100 180 150 500 200 5 255 150 45 SMB. SMP100MC-230 100 207 150 500 230 5 295 150 40 SMB. SMP100MC .. datasheet abstract..	1271.87 Kb	18 Pages

	First line: Contactors Control Relays Safety Contactors 100S-D Specifications Conformity Standards 60947-4 60947-4 Annex Abstract: .. 500V [kW] 55 63 80 90 98 126 150 177 213 300 450 560. 690V [kW] 80 100 110 132 135 176 205 250 300 425. 1000V [kW] 45 55 75 75 90 90 110 132 160 225. AC-2, AC-3, AC-4-60Hz DOL & Reversing UL/CSA/IEC. 1-Ph 115V [A .. datasheet abstract..	82.84 Kb	8 Pages

	First line: 16-Bit Dynamic 4k-Refresh HYB5116160BSJ-50 / -60 / -70 Advanced Information words 16-bit organization operating temperature Performance Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	268.48 Kb	24 Pages

	First line: 8-Bit Dynamic HYB3117800BSJ-50 / -60 / -70 Advanced Information words 8-bit organization operating temperature Performance tRAC Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	257.05 Kb	26 Pages

	First line: 16-Bit Dynamic 1k-Refresh HYB5118160BSJ-50 / -60 / -70 Advanced Information words 16-bit organization operating temperature Performance Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	250.68 Kb	24 Pages

	First line: 8-Bit Dynamic HYB5117800BSJ-50 / -60 / -70 Advanced Information words 8-bit organization operating temperature Performance tRAC Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	223.92 Kb	26 Pages

	First line: STSE-CC3038A Cat.No.030728 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB455AT NICHIA CORPORATION Nichia Abstract: .. Rank T Iv IF=20[mA] 150 178 213 mcd Luminous Intensity Rank S Iv IF=20[mA] 104 126 150 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 .. datasheet abstract..	250.23 Kb	13 Pages

	First line: STSE-CC2018B Cat.No.040630 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB310T NICHIA CORPORATION Nichia Abstract: .. Rank S Iv IF=20[mA] 104 126 150 mcd Luminous Intensity Rank R Iv IF=20[mA] 75 89 104 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 0 .. datasheet abstract..	324.25 Kb	13 Pages

	First line: STSE-CC2028B Cat.No.040618 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB215T NICHIA CORPORATION Nichia Abstract: .. Rank S Iv IF=20[mA] 104 126 150 mcd Luminous Intensity Rank R Iv IF=20[mA] 75 89 104 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank IF=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 0 .. datasheet abstract..	279.8 Kb	13 Pages

	First line: STSE-CC4030B Cat.No.040728 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB021T NICHIA CORPORATION Nichia Abstract: .. Rank T Iv IF=20[mA] 150 178 213 mcd Luminous Intensity Rank S Iv IF=20[mA] 104 126 150 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 .. datasheet abstract..	269.77 Kb	13 Pages

	First line: STSE-CC4009A Cat.No.040402 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB017T NICHIA CORPORATION Nichia Abstract: .. Rank T Iv IF=20[mA] 150 178 213 mcd Luminous Intensity Rank S Iv IF=20[mA] 104 126 150 mcd. Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 .. datasheet abstract..	387.7 Kb	13 Pages

	First line: STSE-CC4052A Cat.No.040709 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NESB007T NICHIA CORPORATION Nichia Abstract: .. Rank S Iv IF=10[mA] 104 126 150 mcd. Rank R Iv IF=10[mA] 75 89 104 mcd Luminous Intensity Rank Q Iv IF=10[mA] 52 63 75 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=10mA,Ta .. datasheet abstract..	393.22 Kb	13 Pages

	First line: STSE-CC4007B Cat.No.040728 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NECB021T NICHIA CORPORATION Nichia Abstract: .. Rank S Iv IF=10[mA] 104 126 150 mcd. Rank R Iv IF=10[mA] 75 89 104 mcd Luminous Intensity Rank Q Iv IF=10[mA] 52 63 75 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=10mA,Ta .. datasheet abstract..	266.25 Kb	13 Pages

	First line: STSE-CC4064A Cat.No.040823 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NECB017T NICHIA CORPORATION Nichia Abstract: .. Rank S Iv IF=10[mA] 104 126 150 mcd. Rank R Iv IF=10[mA] 75 89 104 mcd Luminous Intensity Rank Q Iv IF=10[mA] 52 63 75 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=10mA,Ta .. datasheet abstract..	294.48 Kb	13 Pages

	First line: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 Extended Data Out Dynamic 3.3V FEATURES Access Time Abstract: .. Read-Modify-Write CycleTime tRWC 126 150 180 ns. Access Time from CAS tCAC 13 15 20 ns 3,4,5. Access Time from RAS tRAC 50 60 70 ns 3,4,10. Access Time From Column Address tAA 25 30 35 ns 3,10. CAS to output .. datasheet abstract..	252.83 Kb	12 Pages

	First line: STSE-CC3066A Cat.No.031031 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB505CT NICHIA CORPORATION Nichia Abstract: .. Rank T Iv IF=20[mA] 150 178 213 mcd Luminous Intensity Rank S Iv IF=20[mA] 104 126 150 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 .. datasheet abstract..	222.68 Kb	13 Pages

	First line: STSE-CC3038A Cat.No.030728 SPECIFICATIONS NICHIA CHIP TYPE BLUE MODEL NSCB455AT NICHIA CORPORATION Nichia Abstract: .. Rank T Iv IF=20[mA] 150 178 213 mcd Luminous Intensity Rank S Iv IF=20[mA] 104 126 150 mcd. ! Luminous Intensity Measurement allowance is ± 10%. Color Rank I F=20mA,Ta=25°C Rank W. x 0.11 0.11 0.15 .. datasheet abstract..	312.72 Kb	13 Pages

	First line: MOSEL VITELIC V53C517400A FAST PAGE MODE CMOS DYNAMIC PRELIMINARY V53C517400A Max. Access Abstract: .. 38 tRWC Read-write cycle time 126 ‐ 150 ‐ ns. 39 tRWD RAS to WE delay time 68 ‐ 80 ‐ ns 15. 40 tCWD CAS to WE delay time 31 ‐ 35 ‐ ns 15. 41 tAWD Column address to WE delay time 43 ‐ 50 ‐ ns 15. 42 tOEH OE command hold time .. datasheet abstract..	178.32 Kb	28 Pages

	First line: 8-Bit Dynamic Refresh 3164800AJ / AT L -40 / -50 / -60 3165800AJ / AT L -40 / -50 / -60 Advanced Information words 8-bit organization Abstract: .. Read-write cycle time t R WC 105 ‐ 126 ‐ 150 ‐ ns. RAS to WE delay time t R WD 55 ‐ 68 ‐ 80 ‐ ns 15. CAS to WE delay time t C WD 25 ‐ 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 35 ‐ 43 ‐ 50 ‐ ns 15. OE command hold time .. datasheet abstract..	247.49 Kb	26 Pages

	First line: 4-Bit Dynamic Refresh 3164400AJ / AT L -40 / -50 / -60 3165400AJ / AT L -40 / -50 / -60 Advanced Information words 4-bit organization Abstract: .. Read-write cycle time t R WC 105 ‐ 126 ‐ 150 ‐ ns. RAS to WE delay time t R WD 55 ‐ 68 ‐ 80 ‐ ns 15. CAS to WE delay time t C WD 25 ‐ 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 35 ‐ 43 ‐ 50 ‐ ns 15. OE command hold time .. datasheet abstract..	247.03 Kb	26 Pages

	First line: 16-Bit Dynamic Refresh 3164160AT L -40 / -50 / -60 3165160AT L -40 / -50 / -60 3166160AT L -40 / -50 / -60 Advanced Information words Abstract: .. Read-write cycle time t R WC 105 ‐ 126 ‐ 150 ‐ ns. RAS to WE delay time t R WD 55 ‐ 68 ‐ 80 ‐ ns 15. CAS to WE delay time t C WD 25 ‐ 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 35 ‐ 43 ‐ 50 ‐ ns 15. OE command hold time .. datasheet abstract..	215.9 Kb	26 Pages

	First line: 8-Bit Dynamic Refresh 3164800J / T -50 / -60 3165800J / T -50 / -60 Preliminary Information words 8-bit organization Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ ns 15. OE command hold time tOEH 13 ‐ 15 ‐ ns .. datasheet abstract..	450.97 Kb	28 Pages

	First line: 4-Bit Dynamic Refresh 3164400J / T -50 / -60 3165400J / T -50 / -60 Preliminary Information words 4-bit organization Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ ns 15. OE command hold time tOEH 13 ‐ 15 ‐ ns .. datasheet abstract..	445.28 Kb	28 Pages

	First line: 16-Bit Dynamic Refresh 3164160T -50 / -60 3165160T -50 / -60 Preliminary Information words 16-bit organization Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ ns 15. OE command hold time tOEH 13 ‐ 15 ‐ ns .. datasheet abstract..	365.2 Kb	26 Pages

	First line: MOSEL VITELIC V53C516400A FAST PAGE MODE CMOS DYNAMIC PRELIMINARY V53C516400A Max. Access Abstract: .. 38 tRWC Read-write cycle time 126 ‐ 150 ‐ ns. 39 tRWD RAS to WE delay time 68 ‐ 80 ‐ ns 15. 40 tCWD CAS to WE delay time 31 ‐ 35 ‐ ns 15. 41 tAWD Column address to WE delay time 43 ‐ 50 ‐ ns 15. 42 tOEH OE command hold time .. datasheet abstract..	170.69 Kb	24 Pages

	First line: 3.3V 4-Bit Dynamic HYB3116400BJ / BT L -50 / -60 / -70 HYB3117400BJ / BT L -50 / -60 / -70 Advanced Information words 4-bit organization Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	250.15 Kb	26 Pages

	First line: 16-Bit Dynamic -Refresh HYB3116160BSJ / BST L -50 / -60 / -70 HYB3118160BSJ / BST L -50 / -60 / -70 Advanced Information words 16-bit organization operating temperature Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	255.25 Kb	25 Pages

	First line: 4-Bit Dynamic HYB5117400BJ -50 / -60 / -70 HYB5117400BT -50 / -60 / -70 Advanced Information words 4-bit organization operating Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	321.8 Kb	26 Pages

	First line: 4-Bit Dynamic HYB5116400BJ -50 / -60 / -70 HYB5116400BT -50 / -60 / -70 Advanced Information words 4-bit organization operating Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. datasheet abstract..	321.97 Kb	26 Pages

	First line: TH8080 SoloLIN Transceiver Features Compatible Specification Version Compatible ISO9141 functions Baud rate Abstract: .. Thermal recovery Thys [1] 126 150 °C. [1] No production test, guaranteed by design and qualification [2] In accordance to LIN physical layer specification 1.3 [3] In accordance to LIN physical .. datasheet abstract..	554.89 Kb	23 Pages

	First line: 2008-9 PRODUCT GUIDE Power TransistorsThank purchasing Toshiba Abstract: .. 2SA1360 TO-126 –150 –0.05 23. 2SA1382 LSTM –50 –2 21. 2SA1384 PW-Mini SC-62 –300 –0.1 29. 2SA1408 TO-126 –150 –1.5 23. 2SA1425 MSTM –120 –0.8 22. 2SA1426 MSTM –30 –0.8 22. 2SA1428 MSTM –50 –2 22. 2SA1429 .. datasheet abstract..	1166.13 Kb	43 Pages

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