| Fulltext Datasheet Results |
1 - 50 of about 204 for 126-150 |
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First line: IRGDDN400M06 IRGKI115U06 IRGNIN150M06 IRGBC40S IRGNIN100K06 IGBT Designer's Manual Selection Guide Single Switch (without Diode) Current Rating 5-10 Single Switch (with Diode) Voltage Rating IRGBC20KD2 IRGBC20KD2-S IRGPC20KD2 IRGBC20MD2 IRGBC20MD2-S IRGPC20MD2 IRGBC20UD2 IRGBC20FD2 Abstract: .. 126-150 IRGKIN100K06 IRGKIN100K06 IRGKIN075M12 IRGKIN075M12 . IRGKIN100M06 IRGKIN100M06 IRGKI115U06 IRGKI115U06 . 151-175 IRGKI140U06 IRGKI140U06 IRGKIN100M12 IRGKIN100M12 . IRGKI165F06 IRGKI165F06 IRGKI165F06 IRGKI165F06 . IRGKIN150K06 IRGKIN150K06 . 176-200 IRGKI200F06 IRGKI200F06 . IRGKIN150M06 IRGKIN150M06 . 201-300. 301-400 .. Tags: IRGNIN100K06 IRGBC40S IRGNIN150M06 IRGKI115U06 IRGDDN400M06 IRGTIN075M12* IRGTIN050M12* IRGTIN025M12 IRGTI200F06 IRGTI165F06* IRGTI140U06* IRGTI120F06 IRGTI090U06* IRGTDN200M06 IRGTDN150M12 IRGRDN300M12 IRGBC20KD2 IRGBC20KD2-S IRGPC20KD2 IRGBC20MD2 IRGBC20MD2-S IRGPC20MD2 IRGBC20UD2 IRGBC20FD2 |
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First line: SPA-0301-27 Frequency Range Cost Industry Standard package Available Tape-and -Reel Ohms Characteristic Impedance SPA-0301-27 In-phase power splitter designed applications that require small, cost highly reliable surface mount components. Applications found broadband, wireless other communications s Abstract: .. 1 26 51 76 101 126 150 175 200 225 250. Frequency MHz dB. S11. S22. S33. S32. Insertion Loss and Am plitude Balance. -4. -3.8. -3.6. -3.4. -3.2. -3. 1 26 51 76 101 126 150 175 200 225 250. Frequency MHz dB. S21. S31. .. Tags: SPA-0301-27 |
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First line: Filter Bandwidth SF0070BA03042S Abstract: .. Rejection, 126-150 MHz 40 43 dB. Passband Ripple 0.8 1.5 dB. Phase Deviation from Linear3 7 11 deg. Group Delay Variation3 70 80 ns. Absolute Delay 1.08 μs. Substrate LiNbO3 -. Temperature Coefficient .. Tags: SF0070BA03042S |
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First line: LED 5mm standard TO-18 T-13/32 (5mm) Mounts Universal TO-5, TO-18 T-13/4 (5mm) Mounts Material Specifications: Nylon, ASTM D4066 PA111, Rated 94V-2 Oxygen Rating Index: Over Standard Drawing Tolerances: (unless otherwise indicated) Fractions: 1/64 (0.4) 0.01 (0.25) 0.10 (2.5) .XXX 0.005 (0.13) Abstract: .. 126-150 .150 3.8 .030 .76 .060 1.5 126-160 .160 4.1 .030 .76 .065 1.7 126-170 .170 4.3 .030 .76 .070 1.8 126-180 .180 4.6 .030 .76 .075 1.9 126-190 .190 4.8 .030 .76 .. Tags: LED 5mm standard 102-140 102-080 PA111 |
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First line: 126-060 APPROVED Abstract: .. 126-150. .030 .76 .030 .76 .030 .76 .030 .76 .030 .76 .160 4.1 .170 4.3 .140 3.6 .. Tags: 126-060 datasheet abstract.. |
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First line: CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode RDS(on), High Voltage MOSFET Abstract: .. RDS on VGS = 10 V, ID = ID90 ID90 , Note 1 126 150 mΩ. VGS = 10 V, ID = ID90 ID90 , Note 1 TJ = 125 C 297 mΩ. VGS th VDS = VGS, ID = 2 mA 2 4 V. IDSS VDS = VDSS TJ = 25 C 50μA. VGS = 0 V TJ = 125 C 10μA. IGSS VGS = 20 VDC, VDS = 0 200 nA .. Tags: ISO264TM |
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First line: PEG126 PEG126* 150°c Abstract: .. PEG 126 150 c • 150 C. • resistance to vibrations • low esr. • high ripple capability. speCifiCation. appliCation basiC design. PEG 126 is a high performance axial electrolytic capacitor. It is designed .. Tags: PEG126* PEG126 datasheet abstract.. |
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First line: FAST RECOVERY DIODE 3.3A/400V/rr:30nsec NSF03A40 Surface Mouning Device Ulra Recovery Forward Volage Drop Power Loss, High Efficiency High Surge Capabiliy Packaged 16mm Tape Reel Rolling During Assembly Vols Vols Types Available FLAT PAK~1 7.71.303] 7.21283) 2.3(. 1.9(075 4.2(165) 3.8*160) Abstract: .. 71 1/ Jà 20I ià à ́i- 25 50 75 100 126 150 LEAD TEMPERATURE CC FIG.5- SURGE CURRENT RATINGS. TTT1-1—I I I I 50Hz 50Hz HALF SINE WAVE NON-REPETITIVE NO LOAD C0N0ITI0N ' T =40'C S 0.02 0 05 01 0.2 0.5 1 2 PULSE .. Tags: datasheet abstract.. |
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First line: filter 400hz 30a 1-phase filters 352Z Multi-stage filter Rated currents from Surge pulse protection Solder screw connection Approvals Abstract: .. A 152 126 150 150 0.5. B 51 172.3 221.8 250 0.5. C 45 55.25 65 65 0.5. D 133 100.5 119.5 119.5 0.5. E 150.5 200 200 0.5. F 143 112 135 135 0.5. G 27 0.5. H 9.5 0.5. I 27 0.5. J 12 0.5. K 5.3 6.4 6.4 6.4. L 7. M 0.5. N 6.3 .. Tags: filter 400hz 30a datasheet abstract.. |
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First line: 2Sc1986 SANKEN ELECTRIC Symbol 2SC1985 2SC1986 Unit Vcbo VcEO Vebo Abstract: .. 1\ ~ ~\ 126 150. !\ o. 02. 0.4. 0.6. os. 1.0. 1.2. Base-to Emitter Voltage VeE V 100. I. I-- ~COO':k. l./ oe .. Tags: 2Sc1986 datasheet abstract.. |
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First line: Si6954ADQ N-Channel 2.5-V (G-S) Battery Switch Abstract: .. 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Si6954ADQ Vishay Siliconix New Product. www.siliconix.com FaxBack 408-970 .. Tags: Si6954ADQ |
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First line: SAMSUNG SEMCONDUCTOR KSD5005 ;71k4iq2 a007bS0 TRPLE DFFUSED PLANAR SLCON TRANSSTOR COLOR HORZONTAL OUTPUT APPLCATONS Collector-Base Voltage =1500V ABSOLUTE MAXMUM RATNGS Characteristic Symbol Rating Unit Collector-Base Voltage Vceo 1500 Collector-Emitter Voltage Vceo Abstract: .. Et VccOO, coLLECTOMMrrren VOLTAOE 25 SO 75 100 126 150 175 200 225 250 TcCC , CASE TEMPERATURE sRSAMSUNG SEMICONDUCTOR 230 SAMSUNG SEMICONDUCTOR INC. KSD5005 KSD5005 COLOR TV HORIZONTAL OUTPUT APPLICATIONS .. Tags: datasheet abstract.. |
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First line: Si6926ADQ Dual N-Channel 2.5-V (G-S) MOSFET Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay .. Tags: Si6926ADQ |
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First line: Si6954ADQ N-Channel 2.5-V (G-S) Battery Switch Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Si6954ADQ Vishay Siliconix. www.siliconix.com FaxBack 408-970-5600 .. Tags: Si6954ADQ |
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First line: tag 200-600 TAG 233 600 S1210BS -S1210MS SCR'S 200-600 10-25 S1210 series silicon controlled rectifiers high performance glass passivateci PNPN devices. These parts intended hybrid applications. Absolute Maximum Ratings unless otherwise noted Parameter Part Symbol Min. Max. Unit Test Conditions Rep Abstract: .. V V V A A A A A' s A W W 126 150. [Tj ~ -40 'C to 125 RGK- I KO. O. C] All Conduction Angles Tc 8 6 C Half Cycle. 0_180 . Tc 86 C Half Cycle. 60 Hz Half Cycle. 60 Hz t - 10 ms, Half Cycle 10 ~ s max. 1 0~s max. 20 ms max. 'C .. Tags: TAG 233 600 tag 200-600Â datasheet abstract.. |
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First line: GENL INSTR/ POWER 30^0137 000534^ -GP30 SERIES "GLASS PASSIVATED SILICON JUNCTION PLASTIC RECTIFIER INST High temperature metallurglcally compression contacts found diode-constructed rectifiers Abstract: .. m Lt IDLI NOTf S 25 50 75 100 126 150 175 AMBIENT TEMPERATURE,*C FIG. 3—TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS D O O cc S UJ 5 cc O tu li. a. Si s z < T. 21 = 25' Duly 3ycte 0.7 0.8 09 INSTANTANEOUS .. Tags: datasheet abstract.. |
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First line: 7805KC Fairchild Semiconductor^ Linear I.C.'s- Voltage Regulators 7800 Series GENERAL DESCRIPTION j*A7800 series three-terminal positive voltage regulators constructed using Fairchild Planar epitaxial process. These regulators employ internal current limiting, thermal shutdown safe-area compensation Abstract: .. C II it I 5 100 60 20 10 5 20 1-0 0-6 0-2 01 HE/ tt SINK OF NO HEJ VT 75 SO 2S 100 126 150 AMBIENT TEMPERATURE Â C Maximum average power dissipation as a function of ambient temperature T03 . Maximum average .. Tags: 7805KC a7800 7812UC 7805UC 7815KC datasheet abstract.. |
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First line: Si6954ADQ N-Channel 2.5-V (G-S) Battery Switch Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on 1” x 1” FR4 Board. Si6954ADQ Si6954ADQ Vishay Siliconix. www.siliconix.com FaxBack 408-970-5600 .. Tags: Si6954ADQ |
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First line: gp6*5 APPLICATION NOTE 6.15 FDC37C68x/FDC37C93x Dual Footprint Nizar Azzam This document describes dual footprint layout FDC37C68x FDC37C93x. FDC37C68x package FDC37C93x package. Refer FDC37C68x FDC37C93x data sheets more information. Table illustrates names numbers FDC37C68x. Abstract: .. nDTR2 126 150. RI2 127 153. nDCD2 128 154. *Note: In the FDC37C93x FDC37C93x , these pins are dedicated ROM Data Bus pins. In the FDC37C68x FDC37C68x , these pins are General Purpose pins. They can be configured as dedicated .. Tags: gp6*5 gp64 GP62 FDC37C68x FDC37C93x |
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First line: Si6926AEDQ Dual N-Channel 2.5-V (G-S) Input Protected Load Switch Abstract: .. 126 150. C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Notes a. Surface Mounted on FR4 Board. Si6926AEDQ Si6926AEDQ Vishay Siliconix New Product. Document Number: 73090 S-41519 S-41519 —Rev. A, 11 .. Tags: Si6926AEDQ |
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First line: SKP33CA 5kp17ca sKP36CA ENGLAND SEMICONDUCTOR 5KP5.0CA thru 5KP110CA 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR AVAILABLE VOLTAGES FROM 6.7V THRU 128V 5KP5.0C 5KP110CA series transient suppressor diodes designed protect electronic equipment from failure over voltage transients. devices intended Abstract: .. 25 50 75 100 126 150 175 TA-AMBIENT TEMPERATURE-GO. Tp.PULSE-DURATION-5eCONDS NE006 NE006 1196. ~ '" . . 6564993 0000290 237 . . 63. This Material Copyrighted By Its Respective Manufacturer .. Tags: sKP36CA 5kp17ca SKP33CA datasheet abstract.. |
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First line: Si6926ADQ Dual N-Channel 2.5-V (G-S) MOSFET Abstract: .. C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. RoHS COMPLIANT. www.vishay.com 2. Document Number: 72754 S-81056-Rev S-81056-Rev . B, 12-May-08 12-May-08 . Vishay Siliconix. Si6926ADQ Si6926ADQ .. Tags: Si6926ADQ |
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First line: Si6954ADQ N-Channel 2.5-V (G-S) Battery Switch Abstract: .. C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. RoHS COMPLIANT. www.vishay.com 2. Document Number: 71130 S-81221-Rev S-81221-Rev . C, 02-Jun-08 02-Jun-08 . Vishay Siliconix. Si6954ADQ Si6954ADQ .. Tags: Si6954ADQ |
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First line: Single P-channel MOSFET ELM34417AA-N General description BFeatures ELM34417AA-N uses advanced trench technology Vds=-30V provide excellent Rds(on), gate charge Id=-6A gate resistance. Rds(on) 45mQ (Vgs=-10V) Rds(on) 75mQ (Vgs=-4.5V) Maximum absolute ratings Parameter Symbol Limit Unit Note Abstract: .. J 100 126 150. 6. 6. TJ-JUNCTION TEMPERATURE 'C -v.. GATE TO SOURCE VOLTAGEM BODY DIODE FORWARD .. Tags: datasheet abstract.. |
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First line: Si6926ADQ Dual N-Channel 2.5-V (G-S) MOSFET Abstract: .. RthJA 126 150 C/W. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. C/W. Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay .. Tags: Si6926ADQ |
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First line: UM4000 SERIES UM4900 SERIES Power dissipation 37.5W Voltage ratings 1000V Series resistance rated 0.5S Carrier lifetime greater than UM4000 UM4900 series feature high power diodes with long carrier lifetimes thick l-regions. They especially suitable distortion switches attenuators, through band freq Abstract: .. UM4900 UM4900 POWER RATING AXIAL LEADED DIODE POWER RATINO STUD MOUNTED DIODES 50 75 100 126 150 U6 T. - LEAD TEMPERATURE Â CI 25 50 75 100 1 25 1 50 1 75 STUD TEMPERATURE Â CI 1Z - 10 111 U z < S 8 < a. < " Â < TYPICAL .. Tags: datasheet abstract.. |
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First line: Wearnes Cambion Abstract: .. 270 126 150.0. -15 1.32 1.65 Brown Green 50 50 7.90 .400 100 140.0. -16 1.62 1.98 Brown Blue 50 50 7.90 .520 81 130.0. -17 1.98 2.42 Brown Violet 50 50 7.90 .560 81 110.0. -18 2.43 2.97 Brown Grey 50 50 7.90 .. Tags: datasheet abstract.. |
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First line: 1N4710A* 1N4711A 1N4712A 1N4712A* T-a-n INTERNATIONAL SEMICOND DDDODSS ISEN International Semiconductor, Inc. TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 11.7 VOLT NOMINAL ZENER VOLTAGE CURRENT RANGE: 1N4765 thru Abstract: .. U. Ui O o tu oc D Ãœ DC UJ CL S LU H 0 25 50 75 100 126 150 175 200 Tl, Lead Temperature C 3/8' from body Figure 2 POWER DERATING CURVE O âTM .0015 * - +.0010 + .0005 -.0005 .0010 †.0015 -.0020 0.5 1.0 1.5 .. Tags: 1N4712A* 1N4712A 1N4711A 1N4710A* datasheet abstract.. |
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First line: UF4000 ELECTRONIC CORp-" 24ETD 4000/5400 SERIES .OA/3.OA ULTRA FAST RECOVERY RECTIFIER UF4000 UF5400 forward voltage High current capability leakage current Abstract: .. o S uj oc O O 1.0 < o oc UJ < 0.5 SI f IGLE PI ALF W/ IASE iVE Ri IND OR LOAD E 400 4C >00 50 75 100 126 150 AMBIENT TEMPERATURE,  C 175 Fig. 4—TYPICAL JUNCTION CAPACITANCE 100 u z < t o < CL < o 1 10 100 REVERSE VOLTAGE .. Tags: UF4000 datasheet abstract.. |
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First line: AVANTEK lltlibh BIAVA UTO/UTC Series Thln-Ftlm Cascadable Amplifier -T.m-cpi- Frequency Range: Noise Figure: (Typ) High Gain: 29.0 (Typ) Temperature Compensated 5-Voit System Abstract: .. 050 ,075 .100 .126 ,150 .175 ,200. .225 .250 .275 .300 .325 .350 ,375 .400 ,425 .450 .475 ,500 .92 .92 .88 ,87 .85 .85 .84 .85 .84 .84 ,84 .83 .85 .85 .85 .85 .87 .87 .73 .11 -.10 -.30 -.33 -.30 -.26 -.25 .. Tags: datasheet abstract.. |
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First line: 4801 MOSFET IRFP264n equivalent IRFP064N equivalent IRF3205 equivalent IRFP460Z Switch Reliability Report Abstract: .. IRFP260 IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260 IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260 IRFP260 126 150 160 80 1000 0 8.5E+06 107. IRFP260N IRFP260N 112 175 160 50 96 0 2.5E+06 370. IRFP90N20D IRFP90N20D 111 175 160 80 716 0 3.0E+07 .. Tags: IRFP460Z IRF3205 equivalent IRFP064N equivalent IRFP264n equivalent 4801 MOSFET Silicon Schottky Diode sod123 scr 2501 mosfet 4501 IRLU7821 IRLR120N IRLML6302 irlml2502 IRLL3303 IRL3803S IRL3803 IRL1404 datasheet abstract.. |
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First line: GMF05C-HS3 5-Line Protection Diode Array LLP75-6A Abstract: .. at VR = 0 V; f = 1 MHz CD 126 150 pF. at VR = 2.5 V; f = 1 MHz CD 76 pF. L1. L2. L3. 20740. 1. 3. 6. 5. 4. 2. www.vishay.com. 4. Document Number 85654. Rev. 1.7, 25-Mar-08 25-Mar-08 . GMF05C-HS3 GMF05C-HS3 . Vishay Semiconductors. For technical support .. Tags: MARKING CODE f5 5 lead GMF05C-HS3 LLP75-6A |
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First line: EDAL INDUSTRIES 3DTS7b DDDDlb? SELENIUM CONTACT PROTECTORS CONTACT PROTECTION SUPPRESSION Edal selenium contact protectors excellent solution contact arcing common switched inductive devices. Relays, stepping switches, electro-magnets, solenoids, clutch magnets, computers, thermostats other inductiv Abstract: .. 17R4B2 17R4B2 3/4 101 125 13R5B2 13R5B2 13/16 14R5B2 14R5B2 13/16 16R5B2 16R5B2 13/16 166R5B2 166R5B2 13/16 17R5B2 17R5B2 13/16 126 150 13R6B2 13R6B2 27/32 14R6B2 14R6B2 27/32 16R6B2 16R6B2 27/32 166R6B2 166R6B2 27/32 17R6B2 17R6B2 27/32 151 175 13R7B2 13R7B2 27/32 14R7B2 14R7B2 27/32 .. Tags: datasheet abstract.. |
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First line: National Semiconductor" NDS0605 These P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process been designed minimize on-state resistance, provide rugged reliable performance fast switchin Abstract: .. s  2 ^ MS as 1 g à o 0.9 ID =- 10|JA --- ------- ----- ------- _ --------- 0 25 50 75 100 126 150 T, . JUNCTION TEMPERATURE TO Figure 7. Breakdown Voltage Variation with Temperature 0.8 1 1.2 1.4 1.6 1 - .. Tags: datasheet abstract.. |
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First line: Si6926AEDQ Dual N-Channel 2.5-V (G-S) Input Protected Load Switch Abstract: .. C/W Steady State 126 150. Maximum Junction-to-Foot Drain Steady State RthJF 65 80. Document Number: 73090 S-81056-Rev S-81056-Rev . B, 12-May-08 12-May-08 . www.vishay.com 3. Vishay Siliconix Si6926AEDQ Si6926AEDQ . Notes: a .. Tags: Si6926AEDQ |
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First line: GMF05C-HSF 5-Line Protection Diode Array LLP75-6L Abstract: .. at VR = 0 V; f = 1 MHz CD 126 150 pF. at VR = 2.5 V; f = 1 MHz CD 76 pF. L1. L2. L3. 20740. 1. 3. 6. 5. 4. 2. www.vishay.com. 4. Document Number 81731. Rev. 1.1, 22-Sep-08 22-Sep-08 . GMF05C-HSF GMF05C-HSF . Vishay Semiconductors. For technical support .. Tags: GMF05C-HSF LLP75-6L |
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First line: qp37 MMEND Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. OUTPUT CHARACTERISTICS. Output Voltage .. Tags: qp37 qp35 OP07 "direct replacement" datasheet abstract.. |
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First line: qp37 HA-5135Center 5127A, pport il.co echnica w.inters ntac TERSIL 8-IN 1-88 HA-5177 September 1998 File Number 2913.3 Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. HA-5177 HA-5177 . 3. OUTPUT CHARACTERISTICS .. Tags: qp37 qp35 OP07 "direct replacement" OP05 HA-5135Center HA-5177 |
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First line: selenium surge suppressor selenium surge suppressor INDUSTRIES 3CHS7lb a^J^T^ SEENIUM CONTACT PROTECTORS CONTACT PROTECTION SUPPRESSION Edal selenium contact protectors excellent solution contact arcing common switched inductive devices. Relays, stepping switches, electro-magnets, solenoids, clutch Abstract: .. 17R4B2 17R4B2 3/4 101 125 13R5B2 13R5B2 13/16 14R5B2 14R5B2 13/16 16R5B2 16R5B2 13/16 166R5B2 166R5B2 13/16 17R5B2 17R5B2 13/16 126 150 13R6B2 13R6B2 27/32 14R6B2 14R6B2 27/32 16R6B2 16R6B2 27/32 166R6B2 166R6B2 27/32 17R6B2 17R6B2 27/32 151 175 13R7B2 13R7B2 27/32 14R7B2 14R7B2 27/32 .. Tags: selenium surge suppressor selenium surge suppressor datasheet abstract.. |
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First line: MCR201 (SILICON) thru MCR206 SINAL THYRISTORS Annular PNPN devices designed industrial/military explications such relay lamp drivers, small motor controllers drivers larger thyristors, sensing detection circuits. Sensitive Trigger Current Maximum Reverse Forward Blocking Current Abstract: .. -75 -50 -25 0 25 50 75 100 126 150 175 Tj. JUNCTION TEMPERATURE Â C FIGURE 9 - HOLDING CURRENT FIGURE 10 - CHARACTERISTICS AND SYMBOLS \ N M ;R201 R201 205, MC 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE .. Tags: datasheet abstract.. |
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First line: SE540L NE540L* SIGNETICS ne540 ne640 NE540 sggnetics POWER DRIVER monolithic, class power amplifier designed specifically drive pair complementary output transistors. device features standby current retains high output current drive capability with internal current limiting. wide power bandwidth exc Abstract: .. IN DEGREE C OPEN LOOP GAIN VERSUS TEMPERATURE 10 -7 -80 -26 0 26 SO 75 100 126 150 TEMPERATURE IN DEGREE C OFFSET VOLTAGE VERSUS TEMPERATURE  †4 18  !" i - i -m m  T 3.6 32 Ì S 3-0 i i.. t I "  !.< 22 .. Tags: NE540 ne640 SIGNETICS ne540 NE540L* SE540L datasheet abstract.. |
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First line: GMF05C-HS3 5-Line Protection Diode Array LLP75-6A Abstract: .. at VR = 0 V; f = 1 MHz CD 126 150 pF. at VR = 2.5 V; f = 1 MHz CD 76 pF. L1. L2. L3. 20740. 1. 3. 6. 5. 4. 2. www.vishay.com. 4. Document Number 85654. Rev. 1.8, 23-Sep-08 23-Sep-08 . GMF05C-HS3 GMF05C-HS3 . Vishay Semiconductors. For technical support .. Tags: MARKING CODE f5 5 lead GMF05C-HS3 LLP75-6A |
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First line: A-5135 A-5127A HA-5177 September 1998 File Number 2913.3 Abstract: .. Large Signal Voltage Gain Note 2 25 126 150 - dB. Full 120 140 - dB. Common Mode Rejection Ratio Note 3 Full 110 140 - dB. Closed Loop Bandwidth AVCL = +1 25 0.6 2 - MHz. HA-5177 HA-5177 . 3. OUTPUT CHARACTERISTICS .. Tags: qp35 OP07 "direct replacement" op05 HA-5177 |
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First line: uA78M15HC* uA78M15HC UA78M05HC 78M05HC 78Mos* MA78M00 SERIES 3-TERMINAL POSITIVE VOLTAGE REGULATORS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION juA78M00 series 3-Terminal Medium Current Positive Voltage Regulators constructed using Fairchild Planar* epitaxial process. These regulators e Abstract: .. VOLTS DROPOUT VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE -75 -60 -25 0 25 60 76 100 126 150 176 JUNCTION TEMPERATURE - 'C LOAD TRANSIENT RESPONSE V,Ñ †10 V 1 1 UT 1 1AO CUR RFN T 1 XJT 1 UT EVI 'OL TIO .. Tags: 78Mos* 78M05HC UA78M05HC uA78M15HC uA78M15HC* datasheet abstract.. |
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First line: IRLSZ44A Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Abstract: .. -TS -50 -55 S 20 PS <g 25 50 75 100 126 150 1T5 200 T, , OLtttim Haipeiature [ tj Fig 8. On-Resistance vs. Temperature .. .. Notes : .. l.Xa-SV ICO 125 150 rs 200 .. Tags: datasheet abstract.. |
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First line: SAMSUNG SEMICONDUCTOR.INC 17^4142 0GG7Sfc,4 KSC2682 EPITAXIAL SILICON TRANSISTOR 3-^5- AUDIO FREQUENCY POWER AMPLIFIER Complement KSA1142 ABSOLUTE MAXIMUM RATINGS TO-126 Characteristic Symbol Rating Unit Collector-Base Voltage Vcao Abstract: .. \ \ \ \ \ 25 60 75 100 126 150 175 200 TJU AMBIENT TEMPERATURE SAMSUNG SEMICONDUCTOR 144 SAMSUNG SEMICONDUCTOR. INC lifE 0 I 79blfJ 79blfJ .lf2 00075blf 00075blf 1f.1 KSC2682 KSC2682 NPN EPITAXIAL SILicON TRANSiSToR .. Tags: datasheet abstract.. |
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First line: 400-188 relay Protection devices www.st.com/protection Abstract: .. SMP100MC-140 SMP100MC-140 100 126 150 500 140 5 180 150 60 SMB. SMP100MC-160 SMP100MC-160 100 144 150 500 160 5 205 150 50 SMB. SMP100MC-200 SMP100MC-200 100 180 150 500 200 5 255 150 45 SMB. SMP100MC-230 SMP100MC-230 100 207 150 500 230 5 295 150 40 SMB. SMP100MC SMP100MC .. Tags: 400-188 relay SMCJ5.0A-TR IR 529 esda18-1f2 LNBTVS6-221S USBLC6-2SC6 tpa200 smtpa120 SMA6J15A SM15T15A SM15T100A Secondary protection for DSL lines RBO40 RBO08-40G-TR ESDARF01-1BM2 ESDALC6V1-1U2 datasheet abstract.. |
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First line: dnr14d180 Tfk 680 DNR10D241 TFK 505 dnr 20d 270 varistor DON'S ENTERPRISE 0DDG0Q2 DNRBates (VARISTORS) Ac^-ig DNR1 Abstract: .. 26 31 39 45 56 65 85 100 125 150 170 180 200 225 275 300 320 350 385 14 18 22 26 31 38 45 56 65 85 100 126 150 150 180 200 225 276 300 320 360 385 14 18 22 26 31 38 45 56 66 86 100 126 150 170 180 200 225 275 300 320 350 380 .. Tags: dnr 20d 270 varistor TFK 505 DNR10D241 Tfk 680 dnr14d180 datasheet abstract.. |
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First line: 8-Bit Dynamic HYB3117800BSJ-50/-60/-70 Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. Tags: HYB3117800BSJ-50 -60 -70 |
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First line: 16-Bit Dynamic (1k-Refresh) HYB5118160BSJ-50/-60/-70 Abstract: .. Read-write cycle time tRWC 126 ‐ 150 ‐ 180 ‐ ns. RAS to WE delay time tRWD 68 ‐ 80 ‐ 95 ‐ ns 15. CAS to WE delay time tCWD 31 ‐ 35 ‐ 45 ‐ ns 15. Column address to WE delay time tAWD 43 ‐ 50 ‐ 60 ‐ ns 15. OE command hold time .. Tags: HYB5118160BSJ-50 -60 -70 |
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