NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Average Rectified Forward Current (TC=125oC) Per Diode Average Rectified Forward Current (TC=125oC) Per Device Peak Repetitive Forward Current (TC=125oC) Peak Forward Surge Current Peak Repetitive Reverse , unless otherwise noted) SYMBOL IR IR VF VF VF VF TEST CONDITIONS VR=40V VR=40V, TC=125oC IF=3.0A IF=3.0A, TC=125oC IF=6.0A IF=6.0A, TC=125oC MIN 260 MAX 100 15 0.60 0.45 0.70 ... | Original |
2 pages, |
CSHD6-40C DIODE 40c dpak DIODE ANODE COMMON CSHD6-40C abstract |
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| Abstract: Voltage DC Blocking Voltage Average Rectified Forward Current (TC=125oC) Per Diode Average Rectified Forward Current (TC=125oC) Per Device Peak Repetitive Forward Current (TC=125oC) Peak Forward Surge , ) SYMBOL IR IR VF VF VF VF trr TEST CONDITIONS VR=200V VR=200V, TC=125oC IF=3.0A IF=3.0A, TC=125oC IF=6.0A IF=6.0A, TC=125oC VR=30V, IF=1.0A, di/dt=50A/us MIN 266 MAX 5.0 500 1.0 ... | Original |
2 pages, |
CUD6-02C dpak DIODE ANODE COMMON CUD6-02C abstract |
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| Abstract: clamping hardware. C448PD C448PD VDRM / VRRM 0 to +125oC volts 1400 1300 C448PB C448PB 1200 1100 , UNITS VDRM/VRRM TJ = -40 to +125oC up to 1400V volts Off-state & reverse current IDRM/IRRM Tj = 125oC 35 ma Peak half cycle non-repetitive surge current ITSM 60Hz , VTM IT = 2000A tP = 8.3ms TJ = 125oC 2.45 volts Critical rate of rise of on-state current di/dtrep VD = 60%VDRM 60Hz Tj=125oC see gate drive 400 A/us Critical rate of ... | Original |
2 pages, |
C448P C448 C448PD C448PB datasheet abstract |
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| Abstract: Rectified Forward Current (TC=125oC) Peak Repetitive Forward Current (TC=125oC) Peak Forward Surge Current , noted) SYMBOL IR IR VF VF VF VF TEST CONDITIONS VR=40V VR=40V, TC=125oC IF=3.0A IF=3.0A, TC=125oC IF=6.0A IF=6.0A, TC=125oC MIN 256 MAX 200 20 0.60 0.45 0.70 0.625 UNITS uA ... | Original |
2 pages, |
CSHD3-40 CSHD3-40 abstract |
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| Abstract: clamping hardware. C458PD C458PD VDRM / VRRM 0 to +125oC volts 1400 1300 C458PB C458PB 1200 1100 , CHARACTERISTICS TEST CONDITIONS LIMIT UNITS VDRM/VRRM TJ = -40 to +125oC up to 1400V volts Off-state & reverse current IDRM/IRRM Tj = 125oC 65 ma Peak half cycle non-repetitive , Critical rate of rise of on-state current di/dtrep VD = 60%VDRM 60Hz Tj=125oC 400 A/us Critical rate of rise of off-state voltage dv/dt VDCRIT = 80%VDRM Tj = 125oC 500 v/us ... | Original |
2 pages, |
transistors c458 C458P C458PB disc thyristor c458 C458PD c458 transistor B C458 C458 datasheet C458 C458 C transistor C458 datasheet abstract |
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| Abstract: clamping hardware. C458PD C458PD VDRM / VRRM 0 to +125oC volts 1400 1300 C458PB C458PB 1200 1100 , CHARACTERISTICS TEST CONDITIONS LIMIT UNITS VDRM/VRRM TJ = -40 to +125oC up to 1400V volts Off-state & reverse current IDRM/IRRM Tj = 125oC 65 ma Peak half cycle non-repetitive , Critical rate of rise of on-state current di/dtrep VD = 60%VDRM 60Hz Tj=125oC 400 A/us Critical rate of rise of off-state voltage dv/dt VDCRIT = 80%VDRM Tj = 125oC 500 v/us ... | Original |
2 pages, |
transistors c458 C458 C thyristor inverter circuits thyristor inverter THYRISTOR di/dt 100A/uS disc thyristor c458 C458P C458PB C458PD B C458 C458 equivalent C458 c458 transistor datasheet abstract |
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| Abstract: ITMS(2) 10ms VR 10V Qra 50% Chord 125oC Typ Note 1 Note 1 I2t (2) 10ms Note 4 di/dt NonRep/Rep IGT/VGT at IDRM IRRM IH at Tj VTM at ITM Tj 125oC 125oC at Tj 125oC r Vo at Tj 125oC Note 4 (V) (ms) (A) (A) (A) (A) (A) (A2s , calculations. (Tj = 125oC) r Slope resistance A blocking voltage derating factor of 0.13% per degree ... | Original |
1 pages, |
P042RH02-06 P036RH02-12 datasheet abstract |
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| Abstract: Max Pickup Voltage at 125oC 18.7 18.7 Max Hold Voltage at 125oC 7 7 Min Dropout , ) 342-1700 Max Pickup Voltage at 125oC 18.7 18.7 Max Hold Voltage at 125oC 7 7 Mil Spec ... | Original |
3 pages, |
MKL series M83536 datasheet abstract |
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| Abstract: Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC=125oC) Peak Repetitive Forward Current (TC=125oC) Peak Forward Surge Current (tp=2 us) 200 200 3.0 6.0 75 UNITS V V , IR VF VF trr TEST CONDITIONS VR=200V VR=200V, TC=125oC IF=3.0A IF=3.0A, TC=125oC VR=30V ... | Original |
2 pages, |
CUD3-02 CUD3-02 abstract |
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| Abstract: VDRM / VRRM 0 to +125oC volts 2800 2700 2600 2500 2400 2300 2200 2100 4 5 6 7 , SPCO LIMITING CHARACTERISTICS TEST CONDITIONS LIMIT UNITS TJ = -40 to +125oC up to , voltage Peak recovery current 60 Itsm (kA) I2t (amp-sq-sec) 52 Tj = 125oC 150 @ VDRM/VRRM , 2000A tP = 8.3ms TJ = 125oC 1.74 volts 30 30 3E6 VD = 60%VDRM 60Hz Tj=125oC see gate drive 300 A/us dv/dt VDCRIT = 80%VDRM Tj = 125oC 500 v/us IRM TJ = 125oC @ 10A ... | Original |
2 pages, |
C771LS C771LM C771LE C771LD C771LC C771LB C771LA C771L C771 datasheet abstract |
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| Abstract: Schottky Barrier Rectifiers Operating Temperature: -65o C to 125 o C CrossReference MBR835 MBR835 - MBR850 MBR850 - MBR860 MBR860 Peak Inverse Voltage PIV(V) - MBR845 MBR845 Max. Average Rectified Current lo(A) Part No. Peak Fwd. Surge Current @ 8.3 ms Superimposed lFSM (A) 35 8.0 A 45 50 Max. Forward Voltage @ 25o C @ Rated Io Max. Reverse Current @ 25oC @ Rated PIV Package V FM(V) I R(mA) Bulk/Reel Outline (Typ. in mm or Inches) 0.57 @ ... | Original |
1 pages, |
MBR10100 MBR1035 MBR1045 MBR1050 MBR1060 MBR835 MBR845 MBR850 MBR860 SBL1030 SBL1040 SBL1640CT SR10100 SBLF1030 SBLF1040 MBR835 abstract |
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| Abstract: = 100A RGon = RGoff = 9 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff) Inverse , rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr di/dt = 3500A/us Err VGE = V FWD under ... | Original |
2 pages, |
SII145S12 DIODE 100A 600v 100a SII145S12 abstract |
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| Abstract: RGon = RGoff =4.7 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM , IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 200A; Tj = 25(125 ... | Original |
2 pages, |
SDI300N12 SDI300N12 abstract |
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| Abstract: = 100A RGon = RGoff = 9 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff) Inverse , rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr di/dt = 3500A/us Err VGE = V FWD under ... | Original |
2 pages, |
SID145S12 600v 100a SID145S12 abstract |
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| Abstract: RGon = RGoff =4.7 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM , IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 200A; Tj = 25(125 ... | Original |
2 pages, |
SID300N12 SID300N12 abstract |
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| Abstract: = 100A RGon = RGoff = 9 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff) Inverse , rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr di/dt = 3500A/us Err VGE = V FWD under ... | Original |
2 pages, |
SDI145S12 600v 100a SDI145S12 abstract |
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| Abstract: following conditions: VCC = 600V, IC = 150A RGon = RGoff =5.6 , Tj = 125oC VGE = ± 15V td(on) tr td , (125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 100A; Tj = 25(125)oC Qrr di/dt = A/us Err , 125oC rT Tj = 125oC IRRM IF = 150A; Tj = 25oC Qrr di/dt = A/us Err VGE = V Thermal ... | Original |
2 pages, |
SDI200N12 SDI200N12 abstract |
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| Abstract: 600V, IC = 200A RGon = RGoff = 5 , Tj = 125oC VGE = ± 15V td(on) tr td(off) tf Eon(Eoff , (125)oC rT Tj = 25(125)oC IRRM IF = 200A; Tj = 125oC Qrr di/dt = 6300A/us Err VGE = V FWD ... | Original |
2 pages, |
SII300S12 SII300S12 abstract |
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| Abstract: following conditions: VCC = 600V, IC = 75A RGon = RGoff = 22 , Tj = 125oC VGE = ± 15V td(on) tr td , (125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 50A; Tj = 25(125)oC Qrr di/dt = 800A/us Err , 125oC rT Tj = 125oC IRRM IF =50A; Tj = 25oC Qrr di/dt = A/us Err VGE = V Thermal ... | Original |
2 pages, |
SDI75N12 SDI75N12 abstract |
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| DIP, SO, and TSSOP packaging -40OC -40OC -40OC -40OC to +125OC Operating Junction Temperature Range block diagrams www.datasheetarchive.com/download/17516458-865779ZC/sem3_2.ppt |
Texas Instruments | 21/05/1997 | 1408 Kb | PPT | sem3_2.ppt |
| =IF(av) dIF/dt(A/us) 90% CONFIDENCE Tj=125oC Fig.11 : Recovery charges versus dI F /dt. BYW51 BYW51 BYW51 BYW51(F)-200 4 (A) I IF=IF(av) dIF/dt(A/us) Tj=125oC 90% CONFIDENCE Fig.12 : Peak reverse current versus d www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5659-v1.htm |
STMicroelectronics | 02/04/1999 | 7.74 Kb | HTM | 5659-v1.htm |
| Tj=125oC Fig.8 : Recovery charges versus dI F /dt. QRR;IRM[Tj]/QRR;IRM[Tj=125 C Tj(oC) ] O Fig.10 : Dynamic parameters versus junction tem - perature. RM(A) I IF=IF(av) dIF/dt(A/us) Tj=125oC 90% CONFIDENCE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4399.htm |
STMicroelectronics | 02/04/1999 | 6.07 Kb | HTM | 4399.htm |
| ST | DIGITAL SIGNAL PROCESSING CHIP DATASHEET ST18D952 ST18D952 ST18D952 ST18D952 DIGITAL SIGNAL PROCESSING CHIP DATASHEET Document Number: 5403 Date Update: 09/03/98 Pages: 67 The document is available in the following formats: Portable Document Format and Raw Text Format 12 January 98 42 1714 01 The information in this datasheet is subject to change 1/66 ST18952 ST18952 ST18952 ST18952 DIGITAL SIGNAL PROCESSOR (DSP) CHIP PRELIMINARY DATA n Programmable D950 Core n Data calculation unit www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5403-v2.htm |
STMicroelectronics | 14/06/1999 | 80.06 Kb | HTM | 5403-v2.htm |
| duration (TO220AB/D 2 PAK). QRR(nC) IF=IF(av) dIF/dt(A/us) 90% CONFIDENCE Tj=125oC Fig.11 : Recovery parameters versus junction tem - perature. RM(A) I IF=IF(av) dIF/dt(A/us) Tj=125oC 90% CONFIDENCE Fig.12 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5659-v2.htm |
STMicroelectronics | 14/06/1999 | 8.69 Kb | HTM | 5659-v2.htm |
| ST | DIGITAL SIGNAL PROCESSING CHIP DATASHEET ST18D952 ST18D952 ST18D952 ST18D952 DIGITAL SIGNAL PROCESSING CHIP DATASHEET Document Number: 5403 Date Update: 09/03/98 Pages: 67 The document is available in the following formats: Portable Document Format and Raw Text Format 12 January 98 42 1714 01 The information in this datasheet is subject to change 1/66 ST18952 ST18952 ST18952 ST18952 DIGITAL SIGNAL PROCESSOR (DSP) CHIP PRELIMINARY DATA n Programmable D950 Core n Data calculation unit www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5403-v1.htm |
STMicroelectronics | 02/04/1999 | 80.1 Kb | HTM | 5403-v1.htm |
| ST | DIGITAL SIGNAL PROCESSING CHIP DATASHEET Datasheet DIGITAL SIGNAL PROCESSING CHIP DATASHEET ST18D952 ST18D952 ST18D952 ST18D952 Document Format Size Document Number Date Update Pages Portable Document Format 5403 09/03/1998 67 Raw Text Format 12 January 98 42 1714 01 The informa www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5403-v3.htm |
STMicroelectronics | 25/05/2000 | 82.58 Kb | HTM | 5403-v3.htm |
| ST | DIGITAL SIGNAL PROCESSING CHIP DATASHEET Datasheet DIGITAL SIGNAL PROCESSING CHIP DATASHEET ST18D952 ST18D952 ST18D952 ST18D952 Document Format Size Document Number Date Update Pages Portable Document Format 5403 09/03/1998 67 Raw Text Format 12 January 98 42 1714 01 The information in this datasheet is subject to change 1/66 ST18952 ST18952 ST18952 ST18952 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5403.htm |
STMicroelectronics | 20/10/2000 | 84.96 Kb | HTM | 5403.htm |
| C [ ] -40øC to +105øC [ ] -40øC to +125øC Watchdog Selection: [ ] Software Activation www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/mcu8/files/opl_p251.txt |
STMicroelectronics | 19/12/2000 | 1.14 Kb | TXT | opl_p251.txt |
| C [ ] -40øC to +105øC [ ] -40øC to +125øC Watchdog Selection: [ ] Software Activation www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/mcu8/files/op_p331.txt |
STMicroelectronics | 19/12/2000 | 1.36 Kb | TXT | op_p331.txt |