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LT1055MH Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1058ACJ Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP14, 0.300 INCH, HERMETIC SEALED, CERDIP-14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1638HS#PBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1638HS#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1639IN#TR Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, PLASTIC, DIP-14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1639IN#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, LEAD FREE, PLASTIC, DIP-14, Operational Amplifier visit Linear Technology - Now Part of Analog Devices

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Part : BN-5701-200V-OR Supplier : SMC Manufacturer : Allied Electronics & Automation Stock : - Best Price : $7.7860 Price Each : $7.7860
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1200-VOLT

Catalog Datasheet MFG & Type PDF Document Tags

ultrafast igbt

Abstract: 1200-VOLT is commercially available with 600-volt and 1200-volt ratings. The 600-volt diodes are available with 1-, 4-, 6-, 10-, and 20-amp current ratings. The 1200-volt diodes are available with 5- and 10 , 750 A/µs. A 22-ohm resistor was used with the 1200-volt devices for a di/dt of 250 A/µs. At time T1 , : 1200-volt Ultrafast diode turnturn-off voltage, current and instantaneous off voltage, current and , waveforms for Figure 11: 1200-volt This SBD voltage, Figure 11. 1200 volt SiC SBD turn-offturn-off the
Cree
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CPWR-AN03 ultrafast igbt 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber Cree SiC MOSFET

silicon carbide

Abstract: silicon carbide RECTIFIER SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4114, Rev. - SHD674082B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide silicon carbide RECTIFIER

silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. A SHD674072 SHD674072A SHD674072B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. B SHD674072 SHD674072B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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12 VOLT 2 AMP smps circuit

Abstract: circuit for 12 VOLT 6 AMP smps Schottky diodes to be made. SiC Schottky diodes with 300, 600 and 1200-volt are commercially available at CREE. The 600-volt diodes are available with 1, 2, 4, 6, 10 and 20-amp current ratings. The 1200-volt
Cree
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12 VOLT 2 AMP smps circuit circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps IEC-61000-4-3 CPWR-AN05

silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4130, Rev. B SHD674062 SHD674062B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. C SHD674072 SHD674072B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4130, Rev. A SHD674062 SHD674062B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4183, Rev. - SHD674122 SHD674122B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATASHEET 4182, Rev. A SHD674112 SHD674112B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4180, Rev. A SHD676112 SHD676112B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-1 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. B SHD675052 SHD675052B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4184, Rev. - SHD617112P/N SHD617112AP/N SHD617112BP/N HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-4 PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT PER LEG MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG Sensitron Semiconductor
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SHD61

silicon carbide

Abstract: silicon carbide RECTIFIER SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4115, Rev. - SHD674072B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3B HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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W412

Abstract: CPW4-1200S020B­Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF(AVG)= 20 A Features · · · · · · · 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Swtitching Positive Temperature Coefficient on VF Chip Outline Qc = 130 nC Part Number CPW4-1200S020B Anode Al Cathode Ni/Ag Package Sawn on Foil Marking Wafer # on Foil Maximum Ratings
Cree
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W412 1200-V W4-1200S020 CPW4-1200S020

CPW4-1200S010B

Abstract: Cree SiC diode die CPW4-1200S010B­Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF(AVG)= 10 A Features · · · · · · · Qc Chip Outline = 66 nC 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Swtitching Positive Temperature Coefficient on VF Part Number Anode Cathode Package Marking CPW4-1200S010B Al Ni/Ag Sawn on Foil Wafer # on
Cree
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Cree SiC diode die diode marking 226 W4-1200S010 CPW4-1200S010

silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4080, REV. PRELIMINARY SHD620052 SHD620052P HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR · SCREENED VERSIONS ARE AVAILABLE ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM
Sensitron Semiconductor
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silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4117, Rev. A SHD676052 SHD676052B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-1 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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LCC-5

Abstract: 4179 SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4179, REV. - SHD620112 SHD620112P HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR · SCREENED VERSIONS ARE AVAILABLE MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65 OC, for Dual Package) MAXIMUM
Sensitron Semiconductor
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LCC-5 4179

silicon carbide

Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4129, Rev. B SHD674052 SHD674052B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-3 HIGH PROFILE PACKAGE FEATURES: · NO RECOVERY TIME OR REVERSE RECOVERY LOSSES · NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) MAXIMUM
Sensitron Semiconductor
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