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DF1B-11ES-2.5RC Hirose Electric Co Ltd Board Connector, 11 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Crimp and IDC Terminal, Locking Mech, White Insulator, Socket, ROHS COMPLIANT visit Digikey Buy

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11ES2 Datasheet

Part Manufacturer Description PDF Type
11ES2 EIC Semiconductor Silicon Rectifier Diodes Original
11ES2 Nihon Inter Electronics 200 V, diode Original
11ES2 N/A The Diode Data Book with Package Outlines 1993 Scan
11ES2 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan
11ES2 Nihon Inter Electronics General Purpose Silicon Rectifier Diode Scan

11ES2

Catalog Datasheet MFG & Type PDF Document Tags

11ES2

Abstract: DIODE FEATURES Type : 11ES2 OUTLINE DRAWING * Miniature Size , 0.98 1.0 Approx Net Weight:0.17g 11ES2 200 400 Ta=25°C *1 50Hz Half Sine Wave Resistive Load Ta , Mounted (L=3mm,Print Land=5x5mm,Both Sides) 11ES2 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11ES2 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 , POWER DISSIPATION 11ES2 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE
Nihon Inter Electronics
Original

11ES2

Abstract: DIODE Type 11ES2 OUTLINE DRAWING , 45 Ta=50 ,*2 1.57 50Hz , 1, Half Sine Wave,1cycle,Nonrepetitive 40 + 150 40 + 150 11ES2 , ) FORWARD CURRENT VS. VOLTAGE 11ES2 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj , ) AVERAGE FORWARD POWER DISSIPATION 11ES2 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11ES2 1.2 AVERAGE FORWARD CURRENT (A) 1.0 HALF SINE WAVE 0.8 0.6 0.4
Nihon Inter Electronics
Original

11ES2

Abstract: 11ES1 SILICON RECTIFIER DIODE 1A/100â'"800V 11ES1 11ES2 11ES4 11ES6 11ES8 FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability ° 26mm , ) Approx. Net Weight : 0.17 Grams Voltage Rating TYPE Symbol\^ 11E S1 11ES2 11 ES 4 11ES6 11ES8 Unit , VRRM Tj-25"c 11ES1- 11ES2 50, VA 11ES4â'"11ES8 10 Thermal Resistance, junction to ambient Rth , x 5 mm (îvfc Nhon Inter Bactronlcs Comoro««! 484 bblS123 GDDlbSb 24D â  llESl 11ES2 11ES4
-
OCR Scan
LL1S123

11ES2

Abstract: Grams \ TYPE 11ES1 100 250 11ES2 200 400 Condition 180° sinusoidal wave conduction P.C. Board mounted , °C T j -25-C 11ES1- 11ES2 11ES4 ~11ES8 Max. 1.0 . 50 10 110 Unit V uA °c/w P.C. Board , only (fÜT; »mn Intw Bectronfcs Corporation BOO 11ESI 11ES2 11ES4 11ES6 11ES8 FIG .I-FO R W A
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OCR Scan

11ES2

Abstract: DIODE 11ES2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 11ES2 VRRM VRSM Average Rectified Output , 50 1.0 140 110 Unit µA V °C/W 11ES2 OUTLINE DRAWING (Dmensions in mm) Nihon
Nihon Inter Electronics
Original

11ES1

Abstract: 11ES2 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free , SYMBOL 11ES1 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 , Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 11ES1 - 11ES2 ) PEAK
EIC Semiconductor
Original
DO-41 UL94V-O MIL-STD-202

11ES2

Abstract: 11E51 11E52 11E54 SILICON RECTIFIER DIODE 1A/100â'"800V 11ES1 11ES2 11ES4 11ES6 11ES8 FEATURES o Miniature Size " Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available MAX U1A 0.54C021) * à 0.60(.024) 0.54(.021) DIA . , VRRM T j - 25°C 11ES1~11ES2 50 M A 11ES4 â'"11ES8 10 Thermal Resistance, junction to ambient Rth , Coiporatlon 600 This Material Copyrighted By Its Respective Manufacturer 1IESI 11ES2 11ES4 11ES6 11ES8 FIG
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OCR Scan
11E51 11E52 11E54 11E52 Diode BFC 110 Low Forward Voltage Diode silicon rectifier diode 00Q530
Abstract: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 â' g i a /100~800 v FEATURES 2.7(.106) ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing , ambient Tj = 25°C Tj - 25°C 11ES1~11ES2 11ES4 â'" 11ES8 _ 1.0 . 50 10 P.C. Board , Max. bfc.15123 0002305 T23 500 11ES1 11ES2 11ES4 11ES6 11ES8 VS. FORWARD CURRENT FIG -
OCR Scan
0GD230
Abstract: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.205 (5.2 , 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 Volts Maximum RMS , : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( 11ES1 - 11ES2 ) PEAK FORWARD SURGE CURRENT EIC Semiconductor
Original
Abstract: www.eicsemi.com 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward , SYMBOL 11ES1 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 , ( 11ES1 - 11ES2 ) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES EIC Semiconductor
Original

11ES2

Abstract: DIODE Type 11ES2 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating , 45 Ta=50 ,*2 1.57 50Hz , 1, Half Sine Wave,1cycle,Nonrepetitive 40 + 150 40 + 150 11ES2
Nihon Inter Electronics
Original

1-450-358-11

Abstract: SI-18752 -4101 11ES2-NTA2B 11ES2-NTA2B HZS24-1LTA C760 C761 C765 C770 C801 1-124-252-00 1-136-159-00 , .1ES-B2 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 5% < CONNECTOR > CNS301 CNS302 CNS800 , RELAY RELAY (12V) RELAY (12V) RELAY (12V) DIODE DIODE DIODE DIODE DIODE 1SS119 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 8-719-911-19 DIODE 1SS119 8-719-911-19 DIODE 1SS119 < FUSE
Sony
Original
RM-U150 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse TA-VE150 RY901 PC900

FSF05B60

Abstract: FSF10B60 Discontinued products and their replacements No. Discon. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Replacement No. 11ES1 10EDB10 51 11ES2 10EDB20 52 11E1 10JDA10 53 11E2 10JDA20 54 11E4 10JDA40 55 10E1(10D1) 10DDA10 56 10E2(10D2) 10DDA20 57 10E4(10D4) 10DDA40 58 10E6(10D6) 10DDA60 59 20E1 20KDA10 60 20E2
Nihon Inter Electronics
Original
NSF03B60 FSF05B60 SF05A60-11TSF05B60-11A FCF20B60 C30P10Q KCQ60A04 FSF10B60 F10P10Q 30pfb60 20KDA20 20KDA40 30PDA10 30PDA20 30PDA40 10DF1

15CD11

Abstract: 12CC12 > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'
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OCR Scan
11EFS1 11EFS2 11EFS3 11EFS4 12BG11 12BH11 15CD11 12CC12 12MF20 11BS1

11EFS1

Abstract: 11EFS2 > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'
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OCR Scan
15DL11 12JH11 15bl11 100X100X1 12CD12 12DG11 12DH11 12FC12 12FD12

12JH11

Abstract: 11ES2 > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'
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OCR Scan
12FG11 12FH11 12GC11 50X50X0 12MF15 I-M0X50X0

30KF60B

Abstract: C25P40F 11EQS04 UEQS05 11EQS06 11EQS09 11EQS10 11ES1 11ES2 11ES4 11ES6 U ES8 12MF10 12MF20 12MF30 12MF40
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OCR Scan
10D10 10EF1 11DF2 KSF25A120B NSF03A20 30KF60B C25P40F C25P10Q F5KF20 1N4001 1N4002 1N4004 1N4005 1N4006 1N4007

11ES2

Abstract: 15bl11 > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'
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OCR Scan
10-32UNF2A 15DF4 15DF6 15DF8 15DG15 32MAX 53MIN

motorola diode cross reference

Abstract: replacement UF5402 NSD03A10 NSD03A20 NSD03A40 11ES2 11ES4 11ES6 11E1 11E2 11E4 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
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OCR Scan
FEN30DP motorola diode cross reference replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190

bvy27-200

Abstract: BY228 equivalent 1N5626 1 1N5626GP BYW84 3 1N5627GP BYW85 3 11ES2 BYT51D 3 1N5811
Vishay Semiconductors
Original
BVY28-150 BVY28-200 bvy27-200 BY228 equivalent ERD29-08 ERC05-10b ERC06-15s RGP15J equivalent 1N5190GP BYW76 1N5212 BYW74 1N5211 1N5188GP
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