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ADS1211E/1KG4 Texas Instruments 24-Bit Analog-to-Digital Converter 28-SSOP ri Buy
ADS1211E/1K Texas Instruments 24-Bit Analog-to-Digital Converter 28-SSOP ri Buy

11E1 Datasheet

Part Manufacturer Description PDF Type Ordering
11E1 N/A The Diode Data Book with Package Outlines 1993
ri

2 pages,
84.24 Kb

Scan Buy
datasheet frame
11E1 Nihon Inter Electronics SILICON RECTIFIER DIODE
ri

2 pages,
53.26 Kb

Scan Buy
datasheet frame
11E1 Nihon Inter Electronics General Purpose Silicon Rectifier Diode
ri

2 pages,
54.88 Kb

Scan Buy
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11E1 Nihon Inter Electronics 100 V, diode
ri

2 pages,
19.88 Kb

Original Buy
datasheet frame
11-E1B3 MTI-Milliren Technologies Voltage Controlled Crystal Oscillaor (VCXO)
ri

2 pages,
94.53 Kb

Original Buy
datasheet frame

11E1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 73452 1 !"1 !DA594-131 DA594-131.B"A .D894 19AB41 19AB41 #29;#28;%1#17;1#18;E1 !"#22;1/8#21;#21;1') , #31;9#17;C1A.#30;B #21;#21; #21;#23; #31;9#17;C1A.#30;B #21;#21; 5 7 #24;#22;#23;1.F#18;1#24; #23;1.#30; , (61A.#30; ... Integrated Device Technology
Original
datasheet

20 pages,
1681.14 Kb

111231451631789A175BCD5CEF TEXT
datasheet frame
Abstract: DIODE FEATURES Type : 11E1 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.21g 11E1 100 250 Ta=40°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , = 1.0A Rth(j-a) Junction to Ambient 11E1 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 ... Nihon Inter Electronics
Original
datasheet

4 pages,
28.46 Kb

TEXT
datasheet frame
Abstract: "'#31;6177+#18;1 1 1 1 11+E91 11#17;E#17;1 112)1 111 9111111111111111111115#31;12#31; .=;#31;1'3#31;BBE113B11 BBE113B11#16;&;111$#17;0C2%1 1 1 :11111111111111111111@ "!84!./1617171#19;1 1 11 111#18;E#19;1 11+E#19;1 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?#19;1 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!84!./1617171+#18;1 11 1 1+1 11+E#19;1 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!84!./1617171#17;#18;1 111 1 111#18;E#19;1 11+E#18;1 11+E#19;1 11#24;#22;E1 1 +#17;1111111111111111118F 1111111111111111118F'#31;##1C34##31;1) '.3 ... Original
datasheet

3 pages,
234.19 Kb

123456789AB6CDC6E7C3F8 TEXT
datasheet frame
Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F 1111111111111111118F'#31;##1C23##31;1) '.2 , #17;+11111111111111111161.3' #30;1F"1=.1$ ,#31; -#31;%1 1 1 1 11#18;E+1 1111111111#23;(#22;E 111 1111I 1111I#17;#18;#18;111111111 ... Original
datasheet

3 pages,
236.37 Kb

123456789AB6CDC6E7C3F8 TEXT
datasheet frame
Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F 1111111111111111118F'#31;##1C23##31;1) '.2;>1)1517161+#18;1 1 11#19;E#17;1 11#19;E?1 1 111 +#19;1111111111111111118F 1111111111111111118F'#31;##1C23##31;1) '.2;>1 ... Original
datasheet

3 pages,
232.45 Kb

123456789AB6CDC6E7C3F8 TEXT
datasheet frame
Abstract: 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb , SYMBOL 11E1 11E2 11E4 11E6 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 , 50 10 uA Rev. 04 : October 3, 2005 RATING AND CHARACTERISTIC CURVES ( 11E1 - 11E6 ... EIC Semiconductor
Original
datasheet

2 pages,
31.02 Kb

11E4 11E2 11E6 11E1 TEXT
datasheet frame
Abstract: SILICON RECTIFIER DIODE IA/100 IA/100~400V 11E1 11E2 11E4 FEATURES ® Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mra Inside Tape , 11E1 11E2 11E 4 Unit Repetitive Peak Reverse Voltage VRRM 100 200 400 V Non-Repetitive Peak , Reverse Current IRM Vrm = VRRM Tj = 25 °C 11E1 11E2 50 ¿¿A 11E4 10 Thermal Resistance Rth(j-a , Corporation bbl5123 ÜDGlbSfi 013 486 11E1 11E2 11E4 FIG.1-P0RWARD VOLTAGE VS. FORWARD CURRENT 0 0.2 0.4 ... OCR Scan
datasheet

3 pages,
54.88 Kb

11E4 11E2 11E1 IA/100 TEXT
datasheet frame
Abstract: JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave , FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj , ) AVERAGE FORWARD POWER DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11E1 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF SINE WAVE 1.0 0.8 0.6 0.4 , Sine Wave,Non-Repetitive,No Load 50 11E1 SURGE FORWARD CURRENT (A) 40 30 20 ... Nihon Inter Electronics
Original
datasheet

4 pages,
31.03 Kb

11E1 TEXT
datasheet frame
Abstract: D1#28;496#30;1?.1E1#31;6#29;#28;A , #28; #21;#29;8#28; #27;8#28; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; 1 1 1 D1#28;496#30;1?.1E1#31;6 , #28; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; 1 1 1 D1#28;496#30;1?.1E1#31;6#29;#28;A , #30;1?.1E1#31;6#29;#28;A , #28; #27;8#28; #29;#27; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; #22;#29;#27; 1 1 1 D1#28;496#30;1?.1E1 ... LEDIL
Original
datasheet

8 pages,
1338.19 Kb

23456789AB9B1CDE143F TEXT
datasheet frame
Abstract: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7(.027) 0.5(.020)  , \TYPE Voltage Rating Symbol'-^ 11E1 11E2 11E4 Unit Repetitive Peak Reverse Voltage , IRM Rth( j-a) Test Condition IFM = 1.0A VRM “ VRRM Tj = 25°c 602 flTb 11E1 11E2 , Corporator Tj Max. V 50 UA 10 120 °c/w 11E1 11E2 11E4 FIG.I-FORW ARD VOLTAG E VS ... OCR Scan
datasheet

2 pages,
43.33 Kb

TEXT
datasheet frame
Abstract: DIODE FEATURES Type : 11E1 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.21g 11E1 100 250 Ta=40°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , = 1.0A Rth(j-a) Junction to Ambient 11E1 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 ... OCR Scan
datasheet

22 pages,
812.91 Kb

IBM11D1400BA IBM11D1370BA IBM11E1400BA IBM11E1370BA TEXT
datasheet frame
Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F 1111111111111111118F'#31;##1C23##31;1) '.2 , #17;+11111111111111111161.3' #30;1F"1=.1$ ,#31; -#31;%1 1 1 1 11#18;E+1 1111111111#23;(#22;E 111 1111I 1111I#17;#18;#18;111111111 ... New Japan Radio
Original
datasheet

15 pages,
441.35 Kb

TEXT
datasheet frame
Abstract: JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave , FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj , ) AVERAGE FORWARD POWER DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11E1 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF SINE WAVE 1.0 0.8 0.6 0.4 , Sine Wave,Non-Repetitive,No Load 50 11E1 SURGE FORWARD CURRENT (A) 40 30 20 ... New Japan Radio
Original
datasheet

43 pages,
380.18 Kb

NJU7512VT TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43 DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43 DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43
/datasheets/files/harris/data/mm/mm4/mm4076/mm4076.mdl
Harris 15/08/1997 7.44 Kb MDL mm4076.mdl
XCJC=0.439790997, PC=0.6775, MC=0.3319, FC=0.8, + IKR=1.1E-1, NC=2, VAR=30.37, NR=1.005, TR=4E-9, +
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/transistors_and_fets/hbfp0450.lib
Spice Models 29/07/2012 2.05 Kb LIB hbfp0450.lib
Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=1.1E-1 VJ=1.08E-4 08E-4 CJO=2750p) M3 7 9 1 1
/datasheets/files/fairchild/pdfs/models actual/ndt456p.mod
Fairchild 22/08/2003 1.13 Kb MOD ndt456p.mod
*FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2
/datasheets/files/fairchild/pdfs/models/fdr8508p.txt
Fairchild 22/08/2003 1.12 Kb TXT fdr8508p.txt
*FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n
/datasheets/files/fairchild/pdfs/models/fdc658p.txt
Fairchild 22/08/2003 1.12 Kb TXT fdc658p.txt
*FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n
/datasheets/files/fairchild/pdfs/models actual/fdc658p.mod
Fairchild 22/08/2003 1.12 Kb MOD fdc658p.mod
RTHERM1 TH 6 2.5e-4 RTHERM2 6 5 8.0e-3 RTHERM3 5 4 4.5e-2 RTHERM4 4 3 1.1e-1 RTHERM5 3 2 2.5e-1
/datasheets/files/fairchild/simulation-models/fdd8444.lib
Fairchild 22/10/2012 1.51 Kb LIB fdd8444.lib
*FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2
/datasheets/files/fairchild/pdfs/models actual/fdr8508p.mod
Fairchild 22/08/2003 1.12 Kb MOD fdr8508p.mod
K3B=-2.3016E 3016E+0 KETA=-5.4776E-3 4776E-3 +KT1=-1.1E-1 KT1L=0.0E+0 KT2=2.2E-2 K3B=-2.2178E 2178E+0 KETA=-3.6111E-3 6111E-3 +KT1=-1.1E-1 KT1L=0.0E+0 KT2=2.2E-2
/datasheets/files/kaleidoscope/extras/others/asic atoms - aatoms/aatoms_models_0.lib
Kaleidoscope 21/03/2005 9.6 Kb LIB aatoms_models_0.lib
3.0e-2 RTHERM3 c3 c4 4.3e-2 RTHERM4 c4 c5 8.8e-2 RTHERM5 c5 c6 9.9e-2 RTHERM6 c6 TL 1.1e-1 .ENDS
/datasheets/files/fairchild/pdfs/models actual/huf75645.mod
Fairchild 22/08/2003 2.19 Kb MOD huf75645.mod

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NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE116 Buy 11E1 Buy
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NTE116 Buy 11E1N-TA1B2 Buy
NTE116 Buy 11E1TA1 Buy
NTE116 Buy 11E1TA1B2 Buy
NTE116 Buy 11E1TA1T Buy
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NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
1N5059 Buy 11E1 Buy

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
MUR110G Buy 11E1 Buy Nihon Inter Electronics Close
MUR110RLG Buy 11E1 Buy Nihon Inter Electronics Close