NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
MC68HC11E1CPB2R2 Freescale Semiconductor IC 8-BIT, 2 MHz, MICROCONTROLLER, PQFP52, TQFP-52, Microcontroller ri Buy
MC68HCP11E1CFN2 Freescale Semiconductor IC 8-BIT, 2 MHz, MICROCONTROLLER, PQCC52, PLASTIC, QCC-52, Microcontroller ri Buy
MC68HC11E1CFU3 Freescale Semiconductor IC 8-BIT, 3 MHz, MICROCONTROLLER, PQFP64, QFP-64, Microcontroller ri Buy

11E1 Datasheet

Part Manufacturer Description PDF Type Ordering
11E1 N/A The Diode Data Book with Package Outlines 1993
ri

2 pages,
84.24 Kb

Scan Buy
datasheet frame
11E1 Nihon Inter Electronics SILICON RECTIFIER DIODE
ri

2 pages,
53.26 Kb

Scan Buy
datasheet frame
11E1 Nihon Inter Electronics General Purpose Silicon Rectifier Diode
ri

2 pages,
54.88 Kb

Scan Buy
datasheet frame
11E1 Nihon Inter Electronics 100 V, diode
ri

2 pages,
19.88 Kb

Original Buy
datasheet frame
11-E1B3 MTI-Milliren Technologies, Inc. Voltage Controlled Crystal Oscillaor (VCXO)
ri

2 pages,
94.53 Kb

Original Buy
datasheet frame

11E1

Catalog Datasheet Results Type PDF Document Tags
Abstract: DIODE FEATURES Type : 11E1 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.21g 11E1 100 250 Ta=40°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , 1.0A Rth(j-a) Junction to Ambient 11E1 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 ... Original
datasheet

4 pages,
28.46 Kb

datasheet abstract
datasheet frame
Abstract: JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave , FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C , ) AVERAGE FORWARD POWER DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , 11E1 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF SINE WAVE 1.0 0.8 0.6 0.4 , Sine Wave,Non-Repetitive,No Load 50 11E1 SURGE FORWARD CURRENT (A) 40 30 20 ... Original
datasheet

4 pages,
31.03 Kb

11E1 datasheet abstract
datasheet frame
Abstract: SILICON RECTIFIER DIODE IA/100 IA/100~400V 11E1 11E2 11E4 FEATURES ® Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mra Inside Tape Spacing Package Available Approx. Net Weight: 0.21 Grains MAXIMUM RATINGS Voltage Rating \type Symbol^v 11E1 , = VRRM Tj = 25 °C 11E1 11E2 50 ¿¿A 11E4 10 Thermal Resistance Rth(j-a) Junction to Ambient , ÜDGlbSfi 013 486 11E1 11E2 11E4 FIG.1-P0RWARD VOLTAGE VS. FORWARD CURRENT 0 0.2 0.4 0.6 0.8 1.0 1.2 ... OCR Scan
datasheet

3 pages,
54.88 Kb

11E4 11E2 11E1 datasheet abstract
datasheet frame
Abstract: DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current 11E1 Unit , µA V °C/W 11E1 OUTLINE DRAWING (Dmensions in mm) ... Original
datasheet

2 pages,
19.89 Kb

11E1 datasheet abstract
datasheet frame
Abstract: 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb , SYMBOL 11E1 11E2 11E4 11E6 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 , 50 10 µA Rev. 04 : October 3, 2005 RATING AND CHARACTERISTIC CURVES ( 11E1 - 11E6 ... Original
datasheet

2 pages,
31.02 Kb

11E4 11E2 11E6 11E1 datasheet abstract
datasheet frame
Abstract: SILICON RECTIFIER DIODE IA/IOO~4OOV 11E1 11E2 11E4 FEATURES » Miniature Size » Low Forward Voltage Drop ° Low Reverse Leakage Current 8 High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available VX/_ MAX 0.7(.027) 0.5(.020) DIA 27(1.06) MIN + Ü 0.7(.027) 0.5(.020) DIA 5.2(.205) MAX 27(1.06) MIN Dimensions in nun (Inches) MAXIMUM RATINGS Approx. Net Weight: 0.21 Grams , Current IRM VRM - VRRM = 25°C 11E1 11E2 50 VA 11E4 10 Thermal Resistance Rth( j-a) Junction to ... OCR Scan
datasheet

2 pages,
53.26 Kb

11E4 11E1 11E2 datasheet abstract
datasheet frame
Abstract: SILICON RECTIFIER DIODE ia / io o ~ 4 oov 11E 1 11E2 11E4 FEATURES · Miniature Size Voltage Leakage Drop Current °L o w F o r w a r d °L o w R e v e r s e °H i g h Surge Capability Tape Spacing °2 6 m m a n d 5 2 m m I n s i d e Package Available MAXIMUM R A T IN G S \ T Y P E Voltage Rating Symboi\^ V RRM 11E1 11E2 200 11E4 400 Unit Repetitive Peak Reverse Voltage , FM IRM Test Condition Tj = 2 5 °C 11E1 11E2 11E4 Max. 1.0 50 Unit V IpM - Peak Reverse ... OCR Scan
datasheet

2 pages,
47.2 Kb

datasheet abstract
datasheet frame
Abstract: DIODE Type11E1 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave ... Original
datasheet

2 pages,
19.83 Kb

datasheet abstract
datasheet frame
Abstract: % 11E1 32333 11E1 2 3 # & % 5+ 5+ H 38 A H 38 A 338 4 5' & % 5< 5< E &% 1@ & * . > @ 7 E ... Original
datasheet

2 pages,
243.7 Kb

datasheet abstract
datasheet frame
Abstract: 11E-1-etc. Rated for 120 VAC (nominal) Input. (Change Model No. from 11E-2-etc. to 11E-1-etc.) N/C ... Original
datasheet

2 pages,
156.98 Kb

11E-4-150 11E-4-250 datasheet abstract
datasheet frame
Abstract: Package Outline D 1.000 ± 0.010 0.050 ± 0.003 0.040 (min.) B1 20 0.290 ± 0.008 11 E 1 A 0.035 ± 0.010 10 0.130 ± 0.010 Q 0.010 C L 0.150 ± 0.015 E1 e1 0.100 TYP B 0.018 ± 0.002 20-Lead Ceramic Side-Braze Package (C) Note: Circle (e.g. B ) indicates JEDEC Reference. 0.300 ± 0.010 +0.002 ­0.001 ... Original
datasheet

1 pages,
9.58 Kb

sidebraze datasheet abstract
datasheet frame
Abstract: Package Outline D 1.030 ± 0.010 0.065 ± 0.005 B1 0.065 ± 0.005 20 0.250 ± 0.005 11 E 1 A 0.020 ± 0.005 S 10 0.170 ± 0.005 Q = 0 - 15° +0.002 0.010 ­0.001 C L 0.150 ± 0.015 0.100 TYP e1 0.018 ± 0.003 E1 B 20-Lead Ceramic Dual-In Line Package (C) Note: Circle (e.g. B ) indicates JEDEC Reference. 0.310 ± 0.010 ... Original
datasheet

1 pages,
10.73 Kb

datasheet abstract
datasheet frame
Abstract: 22P4H 22P4H Plastic 22pin 300mil DIP Weight(g) 1.5 JEDEC Code ­ Lead Material Alloy 42 c EIAJ Package Code DIP22-P-300-2 DIP22-P-300-2.54 1 11 e1 12 E 22 D L A1 A A2 Symbol SEATING PLANE e b1 b b2 A A1 A2 b b1 b2 c D E e e1 L Dimension in Millimeters Min Nom Max ­ ­ 4.7 0.51 ­ ­ ­ 3.65 ­ 0.4 0.5 0.6 1.1 1.2 1.5 0.9 1.0 1.3 0.2 0.25 0.32 26.8 27.0 27.2 6.45 6.6 6.75 ­ 2.54 ­ ­ 7.62 ­ 3.0 ­ ­ ... Original
datasheet

1 pages,
14.19 Kb

22P4H DIP22-P-300-2 22P4H abstract
datasheet frame
Abstract: mm DIM. MIN. A A1 B C D E e H h L K 10 0.25 0.4 2.35 0.1 0.33 0.23 12.6 7.4 1.27 10.65 0.75 1.27 0.394 0.010 0.016 TYP. MAX. 2.65 0.3 0.51 0.32 13 7.6 MIN. 0.093 0.004 0.013 0.009 0.496 0.291 inch TYP. MAX. 0.104 0.012 0.020 0.013 0.512 0.299 0.050 0.419 0.030 0.050 Weight: 0.50gr OUTLINE AND MECHANICAL DATA ® SO20 0° (min.)8° (max.) L h x 45° A B e K H D A1 C 20 11 E 1 10 SO20MEC SO20MEC April 1998 0016022 ... Original
datasheet

1 pages,
22.23 Kb

datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
*FDS4953 FDS4953 FDS4953 FDS4953 at Temp. Electrical Model *- .SUBCKT FDS4953 FDS4953 FDS4953 FDS4953 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=18.5n) Ra 4 2 9E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models actual/fds4953-v1.mod
Fairchild 20/06/2002 1.12 Kb MOD fds4953-v1.mod
*FDS4953 FDS4953 FDS4953 FDS4953 at Temp. Electrical Model *- .SUBCKT FDS4953 FDS4953 FDS4953 FDS4953 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=18.5n) Ra 4 2 9E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models/fd/fds4953.txt
Fairchild 20/06/2002 1.12 Kb TXT fds4953.txt
Rdgd 4 6 10meg .MODEL DGD D(M=1.1E-1 VJ=1.08E-4 08E-4 08E-4 08E-4 CJO=2750p) M3 7 9 1 1 INTER E3 9 1 4 1 -2 *ZX
www.datasheetarchive.com/files/fairchild/pdfs/models actual/ndt456p.mod
Fairchild 22/08/2003 1.13 Kb MOD ndt456p.mod
*FDR8508P FDR8508P FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models actual/fdr8508p.mod
Fairchild 22/08/2003 1.12 Kb MOD fdr8508p.mod
*FDC658P FDC658P FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models actual/fdc658p.mod
Fairchild 22/08/2003 1.12 Kb MOD fdc658p.mod
*FDR8508P FDR8508P FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models/fdr8508p.txt
Fairchild 22/08/2003 1.12 Kb TXT fdr8508p.txt
*FDC658P FDC658P FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2
www.datasheetarchive.com/files/fairchild/pdfs/models/fdc658p.txt
Fairchild 22/08/2003 1.12 Kb TXT fdc658p.txt
Rdgd 4 6 10meg .MODEL DGD D(M=1.1E-1 VJ=1.08E-4 08E-4 08E-4 08E-4 CJO=2750p) M3 7 9 1 1 INTER E3 9 1 4 1 -2 *ZX
www.datasheetarchive.com/files/fairchild/pdfs/models/ndt456p.txt
Fairchild 22/08/2003 1.13 Kb TXT ndt456p.txt
DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43 DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43 DbreakMOD D (RS=1.1e-1 TRS1=1.79e-3 TRS2=-1.88e-5) .MODEL DESD1MOD D (BV=12.80 TBV1=0 TBV2=0 RS=43
www.datasheetarchive.com/files/harris/data/mm/mm4/mm4076/mm4076.mdl
Harris 15/08/1997 7.44 Kb MDL mm4076.mdl
No abstract text available
www.datasheetarchive.com/download/85991656-131622ZC/sarsrc.zip (VENNUM.TXT)
IDT 13/09/1996 6563.99 Kb ZIP sarsrc.zip

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
11E100 Acopian Power Supplies ac-to-dc Voltage Converter - Short circuit protected

Shortform Datasheet

Buy
11E100-230 Acopian Power Supplies ac-to-dc Voltage Converter - Short circuit protected

Shortform Datasheet

Buy
11E11 Acopian Power Supplies ac-to-dc Voltage Converter - Short circuit protected

Shortform Datasheet

Buy
11E11-230 Acopian Power Supplies ac-to-dc Voltage Converter - Short circuit protected

Shortform Datasheet

Buy

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
1N4001 1N4001 Buy 11E1 Buy Nihon Close Rectifiers 1.0A General Purpose Rectifier
1N4002 1N4002 Buy 11E1 Buy Nihon Direct Rectifiers 100V/1A/1.1V General Purpose Rectifier
1N4934 1N4934 Buy 11E1 Buy Nihon Direct Rectifiers 1.0A Fast Recovery Rectifier
EGP10B EGP10B Buy 11E1 Buy Nihon Direct Rectifiers 1.0A Ultra Fast Recovery Rectifier
RGP10B RGP10B Buy 11E1 Buy Nihon Direct Rectifiers 1.0A Fast Recovery Rectifier
UF4002 UF4002 Buy 11E1 Buy Nihon Direct Rectifiers 1.0A Ultra Fast Recovery Rectifier

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE116 Buy 11E1 Buy
NTE116 Buy 11E1-EIC Buy
NTE116 Buy 11E1N Buy
NTE116 Buy 11E1NTA1B2 Buy
NTE116 Buy 11E1N-TA1B2 Buy
NTE116 Buy 11E1TA1 Buy
NTE116 Buy 11E1TA1B2 Buy
NTE116 Buy 11E1TA1T Buy
NTE116 Buy 11E1TA1-T Buy

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
1N5059 Buy 11E1 Buy

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
MUR110G Buy 11E1 Buy Nihon Inter Electronics Close
MUR110RLG Buy 11E1 Buy Nihon Inter Electronics Close