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11E1 Datasheet

Part Manufacturer Description PDF Type
11E1 Nihon Inter Electronics 100 V, diode Original
11E1 N/A The Diode Data Book with Package Outlines 1993 Scan
11E1 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan
11E1 Nihon Inter Electronics General Purpose Silicon Rectifier Diode Scan
11-E1B3 MTI-Milliren Technologies Voltage Controlled Crystal Oscillaor (VCXO) Original

11E1

Catalog Datasheet MFG & Type PDF Document Tags

AUO-M201.1F

Abstract: 871A 73452 1 !"1 !DA594-131.B"A .D894 19AB41 #29;#28;%1#17;1#18;E1 !"#22;1/8#21;#21;1') , #31;9#17;C1A.#30;B #21;#21; #21;#23; #31;9#17;C1A.#30;B #21;#21; 5 7 #24;#22;#23;1.F#18;1#24; #23;1.#30; , (61A.#30;
Integrated Device Technology
Original
AUO-M201.1F 871A K1195 111231451631789A175BCD5CEF 23435671839A5BCDBE41 234516789ABCD16B58E4FB51D3B15 D47C51 45D7ED47C2 11234516B
Abstract: DIODE FEATURES Type : 11E1 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.21g 11E1 100 250 Ta=40°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , = 1.0A Rth(j-a) Junction to Ambient 11E1 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 Nihon Inter Electronics
Original
Abstract: "'#31;6177+#18;1 1 1 1 11+E91 11#17;E#17;1 112)1 111 9111111111111111111115#31;12#31; .=;#31;1'3#31;BBE113B11#16;&;111$#17;0C2%1 1 1 :11111111111111111111@ "!84!./1617171#19;1 1 11 111#18;E#19;1 11+E#19;1 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?#19;1 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!84!./1617171+#18;1 11 1 1+1 11+E#19;1 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!84!./1617171#17;#18;1 111 1 111#18;E#19;1 11+E#18;1 11+E#19;1 11#24;#22;E1 1 +#17;1111111111111111118F'#31;##1C34##31;1) '.3 -
Original
123456789AB6CDC6E7C3F8 123456789A9B7C8DEBF4 213456718479A4B1 1234526578796A5BC9D495A24 2A53E964D279CFC9 23456789A11
Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F'#31;##1C23##31;1) '.2 , #17;+11111111111111111161.3' #30;1F"1=.1$ ,#31; -#31;%1 1 1 1 11#18;E+1 1111111111#23;(#22;E 111 1111I#17;#18;#18;111111111 -
Original
2345E1 F2817B9 1111111111111111111111C6E111111 11111111111111111111111111111111115D 1111117B51F 697BC2812
Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F'#31;##1C23##31;1) '.2;>1)1517161+#18;1 1 11#19;E#17;1 11#19;E?1 1 111 +#19;1111111111111111118F'#31;##1C23##31;1) '.2;>1 -
Original
B9B2589F45F2411 767A495B3C6C5BD4 1111111117FC1 11111117B 1113CF541 1111B

11E6

Abstract: 11E1 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb , SYMBOL 11E1 11E2 11E4 11E6 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 , 50 10 µA Rev. 04 : October 3, 2005 RATING AND CHARACTERISTIC CURVES ( 11E1 - 11E6
EIC Semiconductor
Original
11E6 11E2 11E4 DO-41 UL94V-O MIL-STD-202

11E1

Abstract: 11E2 SILICON RECTIFIER DIODE IA/100~400V 11E1 11E2 11E4 FEATURES ® Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mra Inside Tape , 11E1 11E2 11E 4 Unit Repetitive Peak Reverse Voltage VRRM 100 200 400 V Non-Repetitive Peak , Reverse Current IRM Vrm = VRRM Tj = 25 °C 11E1 11E2 50 ¿¿A 11E4 10 Thermal Resistance Rth(j-a , Corporation bbl5123 ÃDGlbSfi 013 486 11E1 11E2 11E4 FIG.1-P0RWARD VOLTAGE VS. FORWARD CURRENT 0 0.2 0.4
-
OCR Scan

11E1

Abstract: JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave , FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj , ) AVERAGE FORWARD POWER DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11E1 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF SINE WAVE 1.0 0.8 0.6 0.4 , Sine Wave,Non-Repetitive,No Load 50 11E1 SURGE FORWARD CURRENT (A) 40 30 20
Nihon Inter Electronics
Original
Abstract: D1#28;496#30;1?.1E1#31;6#29;#28;A , #28; #21;#29;8#28; #27;8#28; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; 1 1 1 D1#28;496#30;1?.1E1#31;6 , #28; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; 1 1 1 D1#28;496#30;1?.1E1#31;6#29;#28;A , #30;1?.1E1#31;6#29;#28;A , #28; #27;8#28; #29;#27; #18;#27; #26;#27; #21;#27; #16;#27; #27; #22;#16;#27; #22;#21;#27; #22;#26;#27; #22;#18;#27; #22;#29;#27; 1 1 1 D1#28;496#30;1?.1E1 LEDIL
Original
23456789AB9B1CDE143F 345678491A1BCD6E6F491 6451B 4565D 891D4EC4 B896D6B851
Abstract: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7(.027) 0.5(.020)  , \TYPE Voltage Rating Symbol'-^ 11E1 11E2 11E4 Unit Repetitive Peak Reverse Voltage , IRM Rth( j-a) Test Condition IFM = 1.0A VRM â' VRRM Tj = 25°c 602 flTb 11E1 11E2 , Corporator Tj Max. V 50 UA 10 120 °c/w 11E1 11E2 11E4 FIG.I-FORW ARD VOLTAG E VS -
OCR Scan
G0Q23

11E1

Abstract: DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current 11E1 Unit , µA V °C/W 11E1 OUTLINE DRAWING (Dmensions in mm) Nihon Inter Electronics
Nihon Inter Electronics
Original
Abstract: .#30;!#27;#28;4175*&1 1 1 1 11#17;E#19;1 11;E&1 111(1 111 711111111111111111111>#30;!?6 ?. , 1 11&E01 111 11#24;#22;A1 1 *1111111111111111118B#27;#28;""1C2 "#28;1(#30;#27;.2#29; -
Original
11111111111117B51F 011111111111111111111B 111111111111111111C2 D58E674 495B3C6C5BD1 11E21
Abstract: 11@#29;1 1111 =11111111111111111112#28;0#28;#31;#30;,#28; #31;#26;3174(#18;1 1 1 1 11(E71 11#17;E#17;1 110&1 , >#28; ?6#30;?,-131714151 1 11 111#18;E51 11(E51 11#17;E#18;1 11#23;#21;D1 111 1 111111#18;E#18;=51 11111#18;E#18;7#18;1 1111#16;%C21 1111 (#18;111111111111111111>#28; ?6#30;?,-1317141(#18;1 11 1 1(1 11(E51 11#17;E#18;1 11 , #31;#26;!!1C1#30;!#26;1#31;,1#27; -
Original
1111111111117B51F 817B9 1289B7F21 11111111111FB 11111111111111111111B 1111111111111111118E
Abstract: 11E1 - 11E2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.205 (5.2) 0.166 , , resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL 11E1 , Ta = 25 °C Ta = 100 °C Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( 11E1 - EIC Semiconductor
Original

11E2

Abstract: 11E1 SILICON RECTIFIER DIODE IA/IOO~4OOV 11E1 11E2 11E4 FEATURES » Miniature Size » Low Forward Voltage Drop ° Low Reverse Leakage Current 8 High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available VX/_ MAX 0.7(.027) 0.5(.020) DIA 27(1.06) MIN + à 0.7(.027) 0.5(.020) DIA 5.2(.205) MAX 27(1.06) MIN Dimensions in nun (Inches) MAXIMUM RATINGS Approx. Net Weight , 1.0 V Peak Reverse Current IRM VRM - VRRM = 25°C 11E1 11E2 50 VA 11E4 10 Thermal Resistance
-
OCR Scan
D00E3D7
Abstract: SILICON RECTIFIER DIODE ia / io o ~ 4 oov 11E 1 11E2 11E4 FEATURES · Miniature Size Voltage Leakage Drop Current °L o w F o r w a r d °L o w R e v e r s e °H i g h Surge Capability Tape Spacing °2 6 m m a n d 5 2 m m I n s i d e Package Available MAXIMUM R A T IN G S \ T Y P E Voltage Rating Symboi\^ V RRM 11E1 11E2 200 11E4 400 Unit Repetitive Peak Reverse Voltage , FM IRM Test Condition Tj = 2 5 °C 11E1 11E2 11E4 Max. 1.0 50 Unit V IpM - Peak Reverse -
OCR Scan
Abstract: % 11E1 32333 11E1 2 3 # & % 5+ 5+ H 38 A H 38 A 338 4 5' & % 5< 5< E &% 1@ & * . > @ 7 E Rosenberger
Original

11E-4-250

Abstract: 11E-4-150 11E-1-etc. Rated for 120 VAC (nominal) Input. (Change Model No. from 11E-2-etc. to 11E-1-etc.) N
Payne Engineering
Original
11E-4-250 11E-4-150 11e250 1233-00 10-400H 11E-2-20 11E-2-30 11E-2-50 11E-2-80 11E-2-120

63A36

Abstract: )#28;
OLIMEX
Original
63A36 123456789ABC 23456789ABC1DE1F1E 41123567815617612D 1856C1 156C1 1762D
Abstract: 1 1 23456789A2345678B1 ; 1 1 1 1 1 1 1 1 #18;!B7"#8$#%9&1 $' # # 1 #18;#24;#29;E)#31;#24;#22;)#31;&111 5E).#20;'&116,711C6#30;81#29;#29; 9111:#24;#25;#20;'&11,; Mueller Electric
Original
E12345671 E1234567891 E1234 5678B1 1F1/011 EE123456
Abstract: DIODE FEATURES Type : 11E1 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.21g 11E1 100 250 Ta=40°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , = 1.0A Rth(j-a) Junction to Ambient 11E1 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 -
OCR Scan
IBM11D1400BA IBM11D1370BA IBM11E1400BA IBM11E1370BA MMDS33DSU-00 36/1M

Dh41

Abstract: "'#31;5176+#18;1 1 1 1 11+E91 11#17;E#17;1 111)1 111 9111111111111111111115#31;01#31; .=;#31;1'2 , +E71 11#17;E#18;1 11#24;#22;E1 111 1 111111#18;E#18;?71 1111#18;E#18;9#18;1 1111#16;(D21 1111 +#18;111111111111111111@ "!83!./1517161+#18;1 11 1 1+1 11+E71 11#17;E#18;1 11#24;#22;E1 1111 +111111111111111111@ "!83!./1517161#17;#18;1 111 1 111#18;E71 11+E#18;1 11+E71 11#24;#22;E1 1 +#17;1111111111111111118F'#31;##1C23##31;1) '.2 , #17;+11111111111111111161.3' #30;1F"1=.1$ ,#31; -#31;%1 1 1 1 11#18;E+1 1111111111#23;(#22;E 111 1111I#17;#18;#18;111111111
New Japan Radio
Original
Dh41 DE51F 33BA1 71DE51F 137C41 E655150 10197A31
Abstract: JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 11E1 100 250 50Hz, Half Sine Wave , FORWARD CURRENT VS. VOLTAGE 11E1 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj , ) AVERAGE FORWARD POWER DISSIPATION 11E1 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11E1 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF SINE WAVE 1.0 0.8 0.6 0.4 , Sine Wave,Non-Repetitive,No Load 50 11E1 SURGE FORWARD CURRENT (A) 40 30 20 New Japan Radio
Original
NJU7512VT NJU7512 7456MH SSOP20
Abstract: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7(.027) 0.5(.020)  , \TYPE Voltage Rating Symbol'-^ 11E1 11E2 11E4 Unit Repetitive Peak Reverse Voltage , IRM Rth( j-a) Test Condition IFM = 1.0A VRM â' VRRM Tj = 25°c 602 flTb 11E1 11E2 , Corporator Tj Max. V 50 UA 10 120 °c/w 11E1 11E2 11E4 FIG.I-FORW ARD VOLTAG E VS -
Original
1234567895ABC5DEF 9ABC12C81 DEC221 9ABC12C8 DEC21 123456789A88B889BCD4E6FDC34DD68

3RT20

Abstract: 3RT20 15-1BB41 11@#29;1 1111 =11111111111111111112#28;0#28;#31;#30;,#28; #31;#26;3174(#18;1 1 1 1 11(E71 11#17;E#17;1 110&1 , >#28; ?6#30;?,-131714151 1 11 111#18;E51 11(E51 11#17;E#18;1 11#23;#21;D1 111 1 111111#18;E#18;=51 11111#18;E#18;7#18;1 1111#16;%C21 1111 (#18;111111111111111111>#28; ?6#30;?,-1317141(#18;1 11 1 1(1 11(E51 11#17;E#18;1 11 , #31;#26;!!1C1#30;!#26;1#31;,1#27;
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OCR Scan
3RT20 3RT20 15-1BB41 3RT20 16-1BB42 3RV20 3RT20 16-2BB42 3RH29 3RU21 24-1NB30 24-1NF30 24-1NP30 25-1NB30
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