NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| MC11E1CPBE2R | Freescale Semiconductor | 8BIT MCU,512 BYTES RAM | 
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| MC68HC11E1MFNE2 | Freescale Semiconductor | 8BIT MCU,512 BYTES RAM |
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| MC68HC11E1MFNE3 | Freescale Semiconductor | 8BIT MCU,512 BYTES RAM |
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| MC68L11E1CPBE2 | Freescale Semiconductor | -5.5V, -40 TO 85C, 52LQ |
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| MC68HCP11E1CFNE2 | Freescale Semiconductor | OBSOLETE - 8BIT MCU,512 BYTES RAM |
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| Part | Manufacturer | Description | Type | Ordering |
| 11E1 | N/A | The Diode Data Book with Package Outlines 1993 |
2 pages, |
Scan | |
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| 11E1 | Nihon Inter Electronics | SILICON RECTIFIER DIODE |
2 pages, |
Scan | |
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| 11E1 | Nihon Inter Electronics | General Purpose Silicon Rectifier Diode |
2 pages, |
Scan | |
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| 11E1 | Nihon Inter Electronics | 100 V, diode |
2 pages, |
Original | |
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| 11-E1B3 | MTI-Milliren Technologies, Inc. | Voltage Controlled Crystal Oscillaor (VCXO) |
2 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SILICON RECTIFIER DIODE IA/100 IA/100~400V 11E1 11E2 11E4 FEATURES ® Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mra Inside Tape Spacing Package Available Approx. Net Weight: 0.21 Grains MAXIMUM RATINGS Voltage Rating \type Symbol^v 11E1 , = VRRM Tj = 25 °C 11E1 11E2 50 ¿¿A 11E4 10 Thermal Resistance Rth(j-a) Junction to Ambient , ÜDGlbSfi 013 486 11E1 11E2 11E4 FIG.1-P0RWARD VOLTAGE VS. FORWARD CURRENT 0 0.2 0.4 0.6 0.8 1.0 1.2 ... | OCR Scan |
2 pages, |
11E4 11E2 11E1 IA/100 IA/100 abstract |
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| Abstract: DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current 11E1 Unit , uA V °C/W 11E1 OUTLINE DRAWING (Dmensions in mm) ... | Original |
2 pages, |
11E1 datasheet abstract |
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| Abstract: 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb , SYMBOL 11E1 11E2 11E4 11E6 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 , 50 10 uA Rev. 04 : October 3, 2005 RATING AND CHARACTERISTIC CURVES ( 11E1 - 11E6 ... | Original |
2 pages, |
11E4 11E2 11E1 11E6 datasheet abstract |
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| Abstract: SILICON RECTIFIER DIODE IA/IOO~4OOV 11E1 11E2 11E4 FEATURES » Miniature Size » Low Forward Voltage Drop ° Low Reverse Leakage Current 8 High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available VX/_ MAX 0.7(.027) 0.5(.020) DIA 27(1.06) MIN + Ü 0.7(.027) 0.5(.020) DIA 5.2(.205) MAX 27(1.06) MIN Dimensions in nun (Inches) MAXIMUM RATINGS Approx. Net Weight: 0.21 Grams , Current IRM VRM - VRRM = 25°C 11E1 11E2 50 VA 11E4 10 Thermal Resistance Rth( j-a) Junction to ... | OCR Scan |
2 pages, |
11E4 11E1 11E2 datasheet abstract |
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| Abstract: 11E-1-etc. Rated for 120 VAC (nominal) Input. (Change Model No. from 11E-2-etc. to 11E-1-etc.) N/C ... | Original |
2 pages, |
11E-4-250 datasheet abstract |
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| Abstract: SE10.04E1 CM7xH1-RX CM7xH2-RX SE10.11E1 SW22.22E1 CM7xH2-RX SW 22.23E1 Positioner standard ... | Original |
1 pages, |
SE101-1 12v relay datasheet 5 pin 12v relay analogue positioner SE 135 11E1 CM76 5 relay 5V 45195 RS232 standard 5v 12v relay positioners 5 pin relay 12v /-10V /-10V /-10V abstract |
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| Abstract: Discontinued products and their replacements No. Discon. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Replacement No. 11ES1 11ES1 10EDB10 10EDB10 51 11ES2 11ES2 10EDB20 10EDB20 52 11E1 10JDA10 10JDA10 53 11E2 10JDA20 10JDA20 54 11E4 10JDA40 10JDA40 55 10E1(10D1) 10DDA10 10DDA10 56 10E2(10D2) 10DDA20 10DDA20 57 10E4(10D4) 10DDA40 10DDA40 58 10E6(10D6) 10DDA60 10DDA60 59 20E1 20KDA10 20KDA10 60 20E2 ... | Original |
1 pages, |
NSF03A60 NSF03B60 F5KQ100 SF05A60-11TSF05B60-11A 60KQ60B FSH10A10 F10P20F tcf10b60 FCQ10A04 FCF20B60 FCF10B60 F10KQ100 F5KF20B F10P06Q datasheet abstract |
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| Abstract: 400 1 5 7 a 30 40a 1. 25 1 20 400 Ioìi7* Wl-fi-o é>. trr=30ns 20F 11E1 BW/f- 250 100 1 40a ... | OCR Scan |
2 pages, |
10V-200 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10M50 10EF2 10M60 10M80 10EF2 abstract |
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| Abstract: 400 1 5 7 a 30 40a 1. 25 1 20 400 Ioìi7* Wl-fi-o é>. trr=30ns 20F 11E1 BW/f- 250 100 1 40a ... | OCR Scan |
2 pages, |
10ma80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10M60 10EF2 10EF2 abstract |
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| Abstract: 400 1 5 7 a 30 40a 1. 25 1 20 400 Ioìi7* Wl-fi-o é>. trr=30ns 20F 11E1 BW/f- 250 100 1 40a ... | OCR Scan |
2 pages, |
10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10MA80 1S783 10EF2 abstract |
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| Abstract: Package Outline D 1.030 ± 0.010 0.065 ± 0.005 B1 0.065 ± 0.005 20 0.250 ± 0.005 11 E 1 A 0.020 ± 0.005 S 10 0.170 ± 0.005 Q = 0 - 15° +0.002 0.010 0.001 C L 0.150 ± 0.015 0.100 TYP e1 0.018 ± 0.003 E1 B 20-Lead Ceramic Dual-In Line Package (C) Note: Circle (e.g. B ) indicates JEDEC Reference. 0.310 ± 0.010 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: Package Outline D 1.000 ± 0.010 0.050 ± 0.003 0.040 (min.) B1 20 0.290 ± 0.008 11 E 1 A 0.035 ± 0.010 10 0.130 ± 0.010 Q 0.010 C L 0.150 ± 0.015 E1 e1 0.100 TYP B 0.018 ± 0.002 20-Lead Ceramic Side-Braze Package (C) Note: Circle (e.g. B ) indicates JEDEC Reference. 0.300 ± 0.010 +0.002 0.001 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: 22P4H 22P4H Plastic 22pin 300mil DIP Weight(g) 1.5 JEDEC Code Lead Material Alloy 42 c EIAJ Package Code DIP22-P-300-2 DIP22-P-300-2.54 1 11 e1 12 E 22 D L A1 A A2 Symbol SEATING PLANE e b1 b b2 A A1 A2 b b1 b2 c D E e e1 L Dimension in Millimeters Min Nom Max 4.7 0.51 3.65 0.4 0.5 0.6 1.1 1.2 1.5 0.9 1.0 1.3 0.2 0.25 0.32 26.8 27.0 27.2 6.45 6.6 6.75 2.54 7.62 3.0 ... | Original |
1 pages, |
22P4H DIP22-P-300-2 22P4H abstract |
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| Abstract: mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 OUTLINE AND MECHANICAL DATA Weight: 0.50gr 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 K SO20 0 ( ... | Original |
1 pages, |
SO20 datasheet abstract |
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| Abstract: DIMENSIONS REF. Millimeters OUTLINE AND MECHANICAL DATA Inches ® Min. Typ. Max. Min. Typ. Max. A 2.00 0.079 A1 0.25 0.010 2.00 0.059 0.079 A2 1.51 b 0.25 c 0.10 0.35 0.004 0.014 D 7.05 8.05 0.278 0.317 E 7.60 8.70 0.299 0.343 E1 5.02 0.30 6.10 e 0.35 0.010 0.012 0.014 6.22 0.198 0.240 0.245 0.65 k 0° L 0.25 0.026 10° 0.50 0° 10° SSOP20 SSOP20 0.80 0.010 0.0 ... | Original |
1 pages, |
SSOP20 datasheet abstract |
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| Abstract: Q211 HN4A56JU HN4A56JU PNP (PCT) HN4A56JU HN4A56JU AM : mm (5 ) 2 : VCEO = -50V : IC = -150mA () hFE : hFE = 120400 hFE : hFE (IC = -0.1mA)/hFE (IC = -2mA) = 0.95 () (Ta = 25°C) (Q1, Q2 ) VCBO -50 V VCEO -50 V VEBO -5 V IC -150 mA IB -30 mA * PC 200 mW Tj 150 °C Tstg ... | Original |
3 pages, |
HN4A56JU HN4A56JU abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| 68HC11E1: Microcontroller 68HC11E1 Features ] 68HC11E1 Parametrics [top] 68HC11E1 Documentation [top] 68HC11E1 Design Tools and Data www.datasheetarchive.com/files/motorola/prodcat/psp/11e1.htm |
Motorola | 16/02/2000 | 28.4 Kb | HTM | 11e1.htm |
| /* * Whetstone benchmark in C. This program is a translation of the * original Algol version in "A Synthetic Benchmark" by H.J. Curnow * and B.A. Wichman in Computer Journal, Vol 19 #1, February 1976. * * Used to test compiler optimization and floating point performance. * * Compile by: ic960 -AJA -Tgal5 -O2 -DPOUT whetston.c * if output is desired. */ #define ITERATIONS 10 /* 1 Million Whetstone instructions */ #include "math.h" double x1, x2, x3, x4, x, y, z, t, t1, t www.datasheetarchive.com/download/83451962-715273ZC/gal5bm00.zip (WHETSTON.C) |
Scantec | 16/04/1998 | 162.15 Kb | ZIP | gal5bm00.zip |
| *NDT456P NDT456P NDT456P NDT456P at Temp. Electrical Model *- .SUBCKT NDT456P NDT456P NDT456P NDT456P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.6 KP=1.33E+1 +THETA=0.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 874p Rd 20 4 4.49E-3 49E-3 49E-3 49E-3 Dds 4 5x DDS .MODEL DDS D(M=1.37E-1 37E-1 37E-1 37E-1 VJ=1.27E-3 27E-3 27E-3 27E-3 CJO=1478p) Dbody 20 5x DBODY .MODEL DBODY D(IS=1.26E-12 26E-12 26E-12 26E-12 N=1.019424 RS=.00068 TT=35.76n) Ra 4 2 4.49E-3 49E-3 49E-3 49E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INT www.datasheetarchive.com/files/fairchild/pdfs/models actual/ndt456p.mod |
Fairchild | 22/08/2003 | 1.13 Kb | MOD | ndt456p.mod |
| *FDC658P FDC658P FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 www.datasheetarchive.com/files/fairchild/pdfs/models actual/fdc658p.mod |
Fairchild | 22/08/2003 | 1.12 Kb | MOD | fdc658p.mod |
| *FDR8508P FDR8508P FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 www.datasheetarchive.com/files/fairchild/pdfs/models actual/fdr8508p.mod |
Fairchild | 22/08/2003 | 1.12 Kb | MOD | fdr8508p.mod |
| *NDT456P NDT456P NDT456P NDT456P at Temp. Electrical Model *- .SUBCKT NDT456P NDT456P NDT456P NDT456P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.6 KP=1.33E+1 +THETA=0.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 874p Rd 20 4 4.49E-3 49E-3 49E-3 49E-3 Dds 4 5x DDS .MODEL DDS D(M=1.37E-1 37E-1 37E-1 37E-1 VJ=1.27E-3 27E-3 27E-3 27E-3 CJO=1478p) Dbody 20 5x DBODY .MODEL DBODY D(IS=1.26E-12 26E-12 26E-12 26E-12 N=1.019424 RS=.00068 TT=35.76n) Ra 4 2 4.49E-3 49E-3 49E-3 49E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INT www.datasheetarchive.com/files/fairchild/pdfs/models/ndt456p.txt |
Fairchild | 22/08/2003 | 1.13 Kb | TXT | ndt456p.txt |
| *FDC658P FDC658P FDC658P FDC658P at Temp. Electrical Model *- .SUBCKT FDC658P FDC658P FDC658P FDC658P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=17.64n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 www.datasheetarchive.com/files/fairchild/pdfs/models/fdc658p.txt |
Fairchild | 22/08/2003 | 1.12 Kb | TXT | fdc658p.txt |
| *FDR8508P FDR8508P FDR8508P FDR8508P at Temp. Electrical Model *- .SUBCKT FDR8508P FDR8508P FDR8508P FDR8508P 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS PMOS(VTO=-1.9 KP=1.1E+1 +THETA=.1 VMAX=3.5E5 LEVEL=3) Cgs 1 5x 550p Rd 20 4 9.3E-3 Dds 4 5x DDS .MODEL DDS D(M=4.64E-1 64E-1 64E-1 64E-1 VJ=1.19 CJO=396p) Dbody 20 5x DBODY .MODEL DBODY D(IS=3.36E-11 36E-11 36E-11 36E-11 N=1.211316 RS=.00081 TT=26.4n) Ra 4 2 9.3E-3 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 www.datasheetarchive.com/files/fairchild/pdfs/models/fdr8508p.txt |
Fairchild | 22/08/2003 | 1.12 Kb | TXT | fdr8508p.txt |
| .SUBCKT RF1S45N06LE RF1S45N06LE RF1S45N06LE RF1S45N06LE 2 1 3; REV 10/25/95 *Term. Conn.* D G S *Spice Model circuit file for the RF1S45N06LE RF1S45N06LE RF1S45N06LE RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM RF1S45N06LESM RF1S45N06LESM *For a detail specification see datasheet FN4076 FN4076 FN4076 FN4076 * * For further discussion of this PSPICE PowerFET macromodel consult * * A New PSPICE Sub-circuit for the Power MOSFET Featuring Global * * Temperature Options by William J. Hepp and C. Frank Wheatley * *NOM TEMP=25 deg C www.datasheetarchive.com/files/harris/data/mm/mm4/mm4076/mm4076.mdl |
Harris | 15/08/1997 | 7.44 Kb | MDL | mm4076.mdl |
| /* */ /* Benchmark #2 - Single Precision Whetstone (A001) */ /* */ /* o This is a REAL*4 version of */ /* the Whetstone benchmark program. */ /* */ /* o DO-loop semantics are ANSI-66 ANSI-66 ANSI-66 ANSI-66 compatible. www.datasheetarchive.com/files/siemens/cdrom/3rdtools/keil/c166eval/examples/whets/whets.c |
Siemens | 11/11/1996 | 7.21 Kb | C | whets.c |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 11E100 | Acopian Power Supplies | ac-to-dc Voltage Converter - Short circuit protected | |
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| 11E100-230 | Acopian Power Supplies | ac-to-dc Voltage Converter - Short circuit protected | |
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| 11E11 | Acopian Power Supplies | ac-to-dc Voltage Converter - Short circuit protected | |
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| 11E11-230 | Acopian Power Supplies | ac-to-dc Voltage Converter - Short circuit protected | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| 1N4001 | 1N4001 Buy | 11E1 Buy | Nihon | Close | Rectifiers | 1.0A General Purpose Rectifier |
| 1N4002 | 1N4002 Buy | 11E1 Buy | Nihon | Direct | Rectifiers | 100V/1A/1.1V General Purpose Rectifier |
| 1N4934 | 1N4934 Buy | 11E1 Buy | Nihon | Direct | Rectifiers | 1.0A Fast Recovery Rectifier |
| EGP10B | EGP10B Buy | 11E1 Buy | Nihon | Direct | Rectifiers | 1.0A Ultra Fast Recovery Rectifier |
| RGP10B | RGP10B Buy | 11E1 Buy | Nihon | Direct | Rectifiers | 1.0A Fast Recovery Rectifier |
| UF4002 | UF4002 Buy | 11E1 Buy | Nihon | Direct | Rectifiers | 1.0A Ultra Fast Recovery Rectifier |
| NTE Electronics Part | Industry Part |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MUR110G Buy | 11E1 Buy | Nihon Inter Electronics | Close |
| MUR110RLG Buy | 11E1 Buy | Nihon Inter Electronics | Close |