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CC1131IRHBRG4Q1 Texas Instruments Low-Cost Low-Power Sub-1-GHz RF Receiver 32-VQFN -40 to 85 visit Texas Instruments
ADS1131IPWR Texas Instruments DELTA-SIGMA ADC, PDSO16, PLASTIC, TSSOP-16 visit Texas Instruments
ADS1131IPW Texas Instruments DELTA-SIGMA ADC, PDSO16, PLASTIC, TSSOP-16 visit Texas Instruments
ADS1131IDR Texas Instruments 18-Bit Analog-to-Digital Converter for Bridge Sensors 16-SOIC -40 to 85 visit Texas Instruments Buy
ADS1131ID Texas Instruments 18-Bit Analog-to-Digital Converter for Bridge Sensors 16-SOIC -40 to 85 visit Texas Instruments

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Part : ADS1131ID Supplier : Texas Instruments Manufacturer : Avnet Stock : - Best Price : €2.4603 Price Each : €3.4234
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Part : ADS1131IDR Supplier : Texas Instruments Manufacturer : Rochester Electronics Stock : 264,613 Best Price : $3.02 Price Each : $3.71
Part : CC1131IRHBRG4Q1 Supplier : Texas Instruments Manufacturer : Rochester Electronics Stock : 5,950 Best Price : $3.31 Price Each : $4.07
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1131/I

Catalog Datasheet MFG & Type PDF Document Tags

atmel 438

Abstract: Atmel 546 -796 -1362 A2 -1016 -1459 I/O3 58 -1557 A2 -2142 -1131 I/O3 406 , -921 -1401 I/O2 -796 -1362 A1 -2142 -1131 I/O3 406 -1362 A3 -2142 , -1131 I/O3 A3 -2142 939 A4 -2125 A5 X (µ) Y (µ) X (µ) Y (µ) A0 , ) Signal Name X (µ) A0 -1130 A1 X (µ) Y (µ) Signal Name X (µ) -1270 I/O1 -610 -1190 A0 -1130 -1270 I/O2 -360 -1190 -1420 -1270 I/O2
Atmel
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atmel 438 Atmel 546 atmel 446 ATMEL 1230 ATMEL 745 atmel 532 M5008 0554C
Abstract: 33­43 GHz GaAs MMIC Image Rejection Balanced Mixer AM038R1-00 Features 0.985 1.785 1.131 I Low Conversion Loss, 9 dB I Low LO Power Requirement, 8 dBm I Image Rejection, 18 dB I No DC Bias Required I Requires External IF 90° Hybrid Chip Outline OHMIC ADDED 9-4-92 1.258 OHMIC ADDED 9-4-92 0.890 0.890 Description Alpha's image rejection balanced GaAs Schottky diode mixer has a typical conversion loss of 9 dB at an LO power level as low as 8 dBm over the band 33­43 GHz. An external 90° IF Alpha Industries
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1/00A

MELCHER SWITCHING REGULATOR

Abstract: Melcher M 1000 INC 0=1 DE|^T?5Db5 0D00 0 3 4 S ~ T58-11-31 i ViJ r e *X Control circuit -4 - cj) i (option i) .J L CZ2 Resistor Pig. 1 Block diagram * Input capacitor Ce absolutely necessary! (see , mode regulators are. available with option i (inhibit input allows output voltage to be switched on and
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122ER-7 MELCHER SWITCHING REGULATOR Melcher M 1000 sic-safco capacitor melcher, uster, switzerland Sic-Safco melcher CH-8610 122ER-8 T58-11-31

500w inverter circuit diagram

Abstract: 1000w inverter circuit diagram at input line. 115 PF-A-series LAMBDAA DENSEI-LAMBDA PF500A-360 1 SEE NOTE 2 I ! /I II111 U U U' 2.5|3|3bW 1.13.1 I. 6 4-M3 Note 1: "Model name, Input voltage range, Nominal output , output terminal 5-02 5-00.6 (Unit: mm) PF1000A-360 1 1 Olili à 12.SN#| I, 37 . _ 4
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265VAC 360VDC 500w inverter circuit diagram 1000w inverter circuit diagram diagram inverter 500w marking 3bw fg135 50/60H 255VAC 50/6GH PF500A-360/85 DC360V

i5 instruction manual

Abstract: M68000 Interrupt Status Register (UISR) 11-29 UART Interrupt Vector Register (UIVR) 11-31 I-8 MCF5206 USER'S MANUAL , 'S MANUAL I-5 Index bursting write, 6-18 burst-inhibited read, 6-21, 6-39 burst-inhibited write 6-42 , 4-1 H halt 14-5 I implicit ownership state 6-60 index sizing, index scaling, program counter indirect , , 15-5 SAMPLE/PRELOAD instruction 15-4 signals, 2-18 L logical address space 1-8 I-6 MCF5206 USER , 12-8 data I/O register 12-11 data transfer 12-4 frequency divider register 12-6 generation of repeated
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i5 instruction manual M68000 MC68040V uart code 128 bit register
Abstract: -300-1.ÛQ : 0.50g (Typ.) SCHEMATICS (EACH DRIVER) Ll I U J U J L ì J U J L ì J L i J L sJ NC 1 1 I2 I3 I4 I5 I6 GND vcc TD62309F 1161 1151114-1 1131 I 04 C>5 ^ 6 COM HEAT SINK & GND T I 1121 |11| |10| I 9 NC I6 I5 I4 -oC'' H 03 \ 2 < \ l i l |4| I 01 VCC I Is I | 6 I TtTTbT NC 1 1 12 13 02 HEAT SINK & GND (Note) The input and output parasitic diodes , . FEATURES · · · · · Low saturation output : V^ e (sat) = @ I q u T = 450mA O utput rating (single output -
OCR Scan
TD62309P/F TD62309P DIP-16 PFP-16 DIP16-P-300-2 HSOP16-P-300-1

40EPF

Abstract: 40EPF10 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2 s 1131 I 2t , 40 A IFSM Max. Peak One Cycle Non-Repetitive 400 Surge Current 475 I 2t Max , . Units Conditions t rr Reverse Recovery Time 450 ns I F @ 10Apk Irr Reverse , 0.5 0.4 I FM = 40 A 0.3 30 A 0.2 10 A 5A 0.1 1A 0 0 40 80 120 160 , 25°C 4 2 40EPF. Series T J = 150°C 1.6 I FM = 60 A 40 A 20 A 10 A 5A 1A 1.2
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40EPF10 40EPF12 I2129

sharp LNB ku band

Abstract: LNB ku band ~ ~ uency and drift 3-5-1 7.Oi dBpp I Local oscillation freq- ~11.31 I I I GHz uency 3-5-2 Local drift associated ~ il. 5 I MHz with temperature change 3-6 Cross-polar , F-type connector, length of bared core area into the connector should be within 5-9rnm. I I P.AGE , humidity conditions. No. Item Specification Condition Min I Typ. Max. Unit at+ Z5°C Noise figure* 3-1 1.3 dB ~ 1.1 Conversion gain 3-2 I dB at 12.25-12. 75GHz 46 ~ 50 I I 3-4 3-5
Sharp
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BSCS87M20 sharp LNB ku band LNB ku band EC-96501 BSCS87N120 1275GH CS87M20 I-N13-CCS-12

I2129

Abstract: FM40A pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2 s 1131 I 2t Conditions , IFSM Max. Peak One Cycle Non-Repetitive 400 Surge Current 475 I 2t Max. I2 t for , Conditions t rr Reverse Recovery Time 410 ns I F @ 40Apk I rr Reverse Recovery Current , . 7 - Forward Voltage Drop Characteristics 2 40EPF. Series TJ = 150°C 1.6 I FM = 60 A 40 A 20 , Reverse Recovery Charge - Qrr (µC) Bulletin I2129 05/97 I FM= 40 A 30 A 4 3 10 A 2 5A 1
International Rectifier
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FM40A
Abstract: reapplied 2 s 1131 I 2âšt Conditions 10ms Sine pulse, rated VRRM applied 10ms Sine pulse , Current 475 I 2t Max. I2 t for fusing 800 A Max. I2 âšt for fusing @ TC = 105° C , Reverse Recovery Time 450 ns I F @ 10Apk Irr Reverse Recovery Current 6 A @ 25A , 0.4 I FM = 40 A 0.3 30 A 0.2 10 A 5A 0.1 1A 0 0 40 80 120 160 , 25°C Document Number: 93149 2 40EPF. Series T J = 150°C 1.6 I FM = 60 A 40 A 20 A 10 International Rectifier
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40EPF12

Abstract: 40EPF s 1131 I 2t Conditions 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage , Current 475 I 2t Max. I2 t for fusing 800 A Max. I2 t for fusing @ TC = 105° C, 180 , 450 ns I F @ 10Apk Irr Reverse Recovery Current 6 A @ 25A/ µs Qrr Reverse , 0.5 0.4 I FM = 40 A 0.3 30 A 0.2 10 A 5A 0.1 1A 0 0 40 80 120 160 , 25°C Document Number: 93149 2 40EPF. Series T J = 150°C 1.6 I FM = 60 A 40 A 20 A 10
International Rectifier
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IR 40EPF12

Abstract: 40EPF 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2 s 1131 I 2t , 40 A IFSM Max. Peak One Cycle Non-Repetitive 400 Surge Current 475 I 2t Max , . Units Conditions t rr Reverse Recovery Time 450 ns I F @ 10Apk Irr Reverse , 0.5 0.4 I FM = 40 A 0.3 30 A 0.2 10 A 5A 0.1 1A 0 0 40 80 120 160 , 25°C 4 2 40EPF. Series T J = 150°C 1.6 I FM = 60 A 40 A 20 A 10 A 5A 1A 1.2
International Rectifier
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IR 40EPF12
Abstract: r - n p -n i 9 1 â 10' 1111 M 2 1 1131 I *1 l ,ul l n l 1^1 |*_*| V F 1 NOTES: 1 , 82C87H H R I A RS ® S E M I C O N D U C T O R CMOS Octal Inverting Bus Transceiver , SI A3 1O ll 17] B2 A3 [7 15] B4 A7 QT H L I O X Hi-Z A B H Hi-Z Hi-Z L 1 O L ì ÃE H |ffi m m m pi p9 i 19] Bà A 2 , £| [11| |12| H3J iLu a I- It IS DESCRIPTION Aq-A7 Local Bus Data I/O Pins Bo-By -
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C82C87H 80C86 80C88 MD82C87H 43G2271 MR82C87H
Abstract: 1=131 i- .,- i P =i_ 1 A -DETAIL A .6 5 0 ± .0 0 4 [1 6 .5 0 ± 0 .1 0j , (SHIP LOOSE) P /N U 7 7 -A 1 1 1 0 -8 0 0 0 P . DRAWN DATE J .S I JAN07/08 DESIGNED J .S I , (m o * o o o o o a i .2 6 8 .4 8 8 ± .0 0 4 [1 2 . 4 0 ± 0 . 1 0 ] [6 , . 2 0 ± 0 . 10 ] ,3 5 2 ± .0 0 6 [ 8 . 9 5 ± 0 . 15 ] a 1 © TOJ ( I L q â'" ,2 6 , 0 ]â'" I [1 1 .5 0 ] .3 1 5 [8 .0 0 ] (TYP.) 1.011 -.561 [ 1 4 .2 5 ]- O .2 9 5 -
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NOV05/08 127-0XXX1
Abstract: 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C ZthJC : IGBT ZthJC [K/W] E [mJ] 0,1 i: 1 2 3 4 ri[K/W]: 0,0234 0,1287 0,1248 0,1131 i[s]: 0,01 0,02 0,05 0,1 0 2 4 6 8 10 12 RG , ) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp 10000 ZthJC [K/W] 0,1 i: 1 2 3 4 ri[K/W]: 0,0372 0,2046 0,1984 0,1798 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 preparedby:CM approvedby:MS R[] 1000 0,01 0,1 t Infineon Technologies
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IFS75B12N3E4
Abstract: 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C ZthJC : IGBT ZthJC [K/W] E [mJ] 0,1 i: 1 2 3 4 ri[K/W]: 0,0234 0,1287 0,1248 0,1131 i[s]: 0,01 0,02 0,05 0,1 0 2 4 6 8 10 12 RG , ) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp 10000 ZthJC [K/W] 0,1 i: 1 2 3 4 ri[K/W]: 0,0372 0,2046 0,1984 0,1798 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 preparedby:CM approvedby:MS R[] 1000 0,01 0,1 t Infineon Technologies
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Abstract: ZthJC [K/W] E [mJ] 0,1 i: 1 2 3 4 ri[K/W]: 0,0234 0,1287 0,1248 0,1131 i[s]: 0,01 0,02 0,05 0,1 , ,1 i: 1 2 3 4 ri[K/W]: 0,03 0,165 0,16 0,145 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 preparedby:AS Infineon Technologies
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A7560

Abstract: °C ZthJC : IGBT ZthJC [K/W] E [mJ] 0,1 i: 1 2 3 4 ri[K/W]: 0,0234 0,1287 0,1248 0,1131 i[s]: 0 , (T) 100000 Rtyp 10000 ZthJC [K/W] 0,1 i: 1 2 3 4 ri[K/W]: 0,03 0,165 0,16 0,145 i[s]: 0,01 0
Infineon Technologies
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A7560
Abstract: [mJ] 0,1 i: 1 2 3 4 ri[K/W]: 0,0234 0,1287 0,1248 0,1131 i[s]: 0,01 0,02 0,05 0,1 0 2 4 , ) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp 10000 ZthJC [K/W] 0,1 i: 1 2 3 4 ri[K/W]: 0,03 0,165 0,16 0,145 i[s]: 0,01 0,02 0,05 0,1 0,01 0,001 preparedby:AS approvedby:MS R[] 1000 0,01 0,1 t [s] 1 10 Infineon Technologies
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CS50116

Abstract: Compliances: ï'· IEEE 383 (70,000 BTU/hr) as modified by NRC Reg. Guide 1.131 ï'· IEEE 1202 (70,000 BTU/hr , stability Flame Test Compliances: ï'· IEEE 383 (70,000 BTU/hr) as modified by NRC Reg. Guide 1.131 ï , need of the nuclear power market. ïïïïï'· Power and Control Cable Instrumentation , : Compliance Standards ï'· ANSI ï'· ICEA ï'· IEEE Franklin Qualification Reports ïF-C5120-1 ïF-C5120-2 ïF-C5120-3 ïF-C5120-4 Backed by Quality Assurance Every Ultrol cable is manufactured
General Cable
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CS50116 INS-0110-0311

R5607

Abstract: mil spec 38999 (2011) X DEVICE SCREENING I iw% Pre Sesl Barn-M (Optional) (1131) I menial Visual Stali lizitl en
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R5607 mil spec 38999 motorola mecl system design handbook P2050 hughes cpu MIL-C-38999 17A150 00D33D 902170T-18-01 902170T-18-02 902171R-18-01

TDA1519Q

Abstract: TDA1519BQ 1990 1-131 i ps oerrvconcuctors M uoo/sadio J roducts Laboratory Report Audio power ICs
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NBA9001 TDA1519Q TDA1519BQ TDA1519 equivalent TDA1516 equivalent TDA1519AQ TDA1516AQ TDA1516/1518 TDA1517/1519 TDA1519A/B

B3F SWITCH

Abstract: 3105 1131 I Contact Form B3F-10@@ -40@@ -50@@ -10@@-G B3F-11@@ -41@@ -51@@ -11@@-G B3F
OMRON
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B3F-1000 B3F-1000S B3F-1002 B3F-1002S B3F-1005 B3F-1005S B3F SWITCH 3105 5050S

FS9912R

Abstract: . 23 11.3.1 I/O Port1(PT1 , -bit ADC and 4 × 16 LCD driver. 11.3 I/O Port 11.3.1 I/O Port1(PT1) Address 020H 021H 022H 023H
Fortune Semiconductor
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FS9912R FS9912 FS9912-DS-35 CR-004 00100000B FS9912R- FS9912-
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