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DHS4E4C112MHXB Murata Manufacturing Co Ltd CAPACITOR, CERAMIC, MULTILAYER, 15000V, N4700, 0.0011uF, CHASSIS MOUNT visit Digikey Buy
UBY1H112MHL Nichicon Corporation CAP ALUM 1100UF 20% 50V RADIAL visit Digikey Buy

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Part : DHS4E4C112MHXB Supplier : muRata Manufacturer : Avnet Stock : - Best Price : $14.2494 Price Each : $16.2791
Part : UBY1H112MHL Supplier : Nichicon Manufacturer : Avnet Stock : - Best Price : €0.6637 Price Each : €0.8419
Part : UBY1H112MHL Supplier : Nichicon Manufacturer : Chip1Stop Stock : 600 Best Price : $1.14 Price Each : $1.14
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112MH

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: EPCOS EMI Suppression Chokes Current-compensated ring core double chokes for power lines Ferrite core in plastic case, economy pottinn: sector winding Rated inductance Rated voltage Rated current 1EC climatic category 1,1.12mH 250 Vac 0,3 . 2,0 A 40/125/56 B82720-A, horizontal version O rd e rin g code B82720-K, vertical version M in. qty. Max. qty. /R per w inding L R per w in d in g fltyp per w in d in g A mH mQ 0,3 12 1150 430 230 -
OCR Scan
B82720-A2301-N40 B82720-A2601-N40 B82720-A2102-N40 B82720-A2202-N40 B82720-K2301-N40 B82720-K2601-N40

2N7334

Abstract: IRFG110 175°C/W Notes 1) Pulse Test: Pulse Width 300µs, 2% 2) @ VDD = 25V , L 112mH , RG = 25 , Peak
Semelab
Original
2N7334 IRFG110 10--G 12--G 13--S 14--D
Abstract: 40 45 Units V A 2640 A TJ=25â"ƒ,IAS=12A,L=1.12mH 81 mJ Current decaying Sangdest Microelectronics
Original
121NQ N1158 121NQ035/R-1 121NQ040/R-1 121NQ045/R-1 121NQ035-1
Abstract: ) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 25V , L ≥ 112mH , RG = 25â"¦ , Peak IL = 1A Semelab
Original
2N7336 IRFG6110

SMLG110

Abstract: 112mH , RG = 25 , Peak IL = 1A , Starting TJ = 25°C 3) @ ISD 1A , di/dt 75A/µs , VDD BVDSS , TJ 150
Semelab
Original
SMLG110

LR 120N

Abstract: D353 -1.12mH Currentdecaying linearly to zero in 1 psec Frequency limited by T j max. VA-1 .5 x VR typical
-
OCR Scan
LR 120N D353 120NQ D-353 120NQ035 120NQ040 120NQ045 D-354
Abstract: ms, half Sine pulse 1060 A EAS TJ=25â"ƒ,IAS=8A,L=1.12mH 36 mJ IAR Current Sangdest Microelectronics
Original
82CNQ030 N1061 82CNQ030SL 82CNQ030SM
Abstract: Following any rated load condition and with rated V rrm applied T j = 25°C, lAS = 8.0A, L = 1.12mH -
OCR Scan
SMD61-8 SLD61-8 QD2312E 82CNQ SLD61

PU7456

Abstract: supply 1.65±0.2 25.3±0.2 Tstg -55 to +150 °C 4 6 8 2 1 10 L = 11.2mH
Panasonic
Original
PU7456

120NQ

Abstract: 120NQ035 Non-Repetitive Avalanche Energy 81 mJ Tj-25°C, lAS"12Amps,L-1.12mH lAR Repetitive Avalanche Current 12 A
-
OCR Scan
AN00E D-355 D-356
Abstract: 40 45 Units V A 1860 A TJ=25â"ƒ,IAS=12A,L=1.12mH 81 mJ Current decaying Sangdest Microelectronics
Original
N1155 120NQ035/R-1 120NQ040/R-1 120NQ045/R-1 120NQ035-1 120NQ035R-1
Abstract: : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.12mH, IAS = KERSEMI
Original
KSMF13N06 54TYP

2N7334

Abstract: IRFG110 112mH , RG = 25 , Peak IL = 1A , Starting TJ = 25°C 3) @ ISD 1A , di/dt 75A/µs , VDD BVDSS , TJ 150
Semelab
Original
Abstract: 80 A IFSM 8.3 ms, half Sine pulse 1320 A EAS TJ=25â"ƒ,IAS=8A,L=1.12mH 36 Sangdest Microelectronics
Original
87CNQ020 N1134 87CNQ020SL 87CNQ020SM 87CNQ020/SL/SM

188373

Abstract: 100BGQ030 10msSineor6msRect. pulse Eas Non-RepetitiveAvalancheEnergy 36 mJ TJ = 25°C, lAS=8Amps, L = 1.12mH lAR
-
OCR Scan
100BGQ030J 100BGQ030 188373 40HFL40S02 IRFP460 PD-20996 00BGQ030 100BGQ

lcd 30 pin diagram lvds

Abstract: lcd 40 pin diagram lvds LVDS ( ) (VSYNCHSYNCDE2 ) 112MHz LVDS 672Mbps 5.38Gbps (672MB , 85MHz 1 FPD-Link OpenLDI DS90C387 32.5MHz 112MHz (170MHz) DS90CF388 40 112MH SVGA QXGA 5.38Gbps DC : ± 1LVDS , FPD-Link LDI (LVDS ) 3 112MHz (170MHz) 8 LVDS , 12: LOW Note 13: DC (ATE) 85MHz 112MHz Note 14: PLL 55 68
National Semiconductor
Original
AN-1059 lcd 30 pin diagram lvds lcd 40 pin diagram lvds AN-1127 AN-1163 dual lvds ttl DS90C387/DS90CF388 100-TQFP 672MB/ 170MH DS90C387A/DS90CF388A

2N7336

Abstract: IRFG6110 = 25V , L 112mH , RG = 25 , Peak IL = 1A , Starting TJ = 25°C 3) @ ISD 1A , di/dt 75A/µs , VDD
Semelab
Original

SCHOTTKY 1560

Abstract: ik 8801 10msSineor6msRect. pulse Eas Non-RepetitiveAvalancheEnergy 80 mJ TJ = 25°C, lAS= 12Amps, L = 1.12mH lAR
-
OCR Scan
175BGQ030J 175BGQ030 SCHOTTKY 1560 ik 8801 OZ 9936 PD-20997 75BGQ030 175BGQ

lcd 30 pin diagram lvds

Abstract: AN-1059 LVDS ( ) (VSYNCHSYNCDE2 ) 112MHz LVDS 672Mbps 5.38Gbps (672MB , 85MHz 1 FPD-Link OpenLDI DS90C387 32.5MHz 112MHz (170MHz) DS90CF388 40 112MH SVGA QXGA 5.38Gbps DC : ± 1LVDS , FPD-Link LDI (LVDS ) 3 112MHz (170MHz) 8 LVDS , 12: LOW Note 13: DC (ATE) 85MHz 112MHz Note 14: PLL 55 68
National Semiconductor
Original
an1059 dual pixel lvds AN1127 DS90C387/CF388 DS90C387A/CF388A DS90C387VJD DS90CF388VJD
Abstract: temperature. Â' Starting TJ = 25°C, L = 1.12mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400μs; duty cycle International Rectifier
Original
IRF8252P IRF8252TRP EIA-481 EIA-541 D-020D

K20J60U

Abstract: k20j60 EPCOS EMI Suppression Chokes Current-compensated ring core double chokes for power lines Ferrite core in plastic case, economy pottinn: sector winding Rated inductance Rated voltage Rated current 1EC climatic category 1,1.12mH 250 Vac 0,3 . 2,0 A 40/125/56 B82720-A, horizontal version O rd e rin g code B82720-K, vertical version M in. qty. Max. qty. /R per w inding L R per w in d in g fltyp per w in d in g A mH mQ 0,3 12 1150 430 230
Toshiba
Original
TK20J60U SC-65 K20J60U k20j60 k20j 2-16C1B
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