NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval. 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory Quality Team Page 1 Preface & Contents SEC has been making continuous effort to enhance t ... | Original |
45 pages, |
48-TSOP1 K9F2808U0C-VIB0 K9F2808U0C-VCB0 NAND qualification K9F2808U0C-DCB0 63-TBGA samsung NAND Flash DIE K9F2808U0C-YIB0 NAND read disturb K9F2808U0C-YCB0 SAMSUNG NAND Flash Qualification Report NAND "read disturb" Samsung NAND Flash Qualification Reliability datasheet abstract |
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| Abstract: o ro ain u lc t s o FA H LS E E D D P OD C S MB D E R U T D A MOD L S R M UE WitcId sr sB a c e ne n u t e rn h s i UA S L sA g ls C o n ee , A N rr s , e r i o co s G o ga Ps aa a , e J re ic tw y N w es y E rp uo e B a n c w i, ema y ru s h eg G r n Ai s a T ie, aw n ap iT i a K wo n H n K n o lo , o g o g S e z e , hn h n h n C ia WitcId sr sH a q atr ne n u t e e d u r s i e 6 5S c mo eD ie 7 ya r r , v Mi i s C 9 0 5 l t , A 53 pa T l(0 ... | Original |
25 pages, |
Hynix 32Gb Nand flash WD2SN01GX808 nand flash HYNIX Samsung 8Gb MLC Nand flash 64gb NAND chip wd2ue01Gx818 240 pin quad rank DIMM DDR3 connector 64gb nand flash hynix hynix nand DDR3 sodimm pcb layout samsung MLC nand flashes 64gb nand flash samsung datasheet abstract |
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| Abstract: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A MT9VDDT872A, MT18VDDT1672A MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES · 184-pin dual in-line memory module (DIMM) · Utilizes 100 MHz and 133 MHz DDR SDRAM components · ECC-optimized pinout · 64MB (8 Meg x 72), 128MB 128MB (16 Meg x 72) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK ed ... | Original |
23 pages, |
datasheet abstract |
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| Abstract: ADVANCE 8, 16 MEG x 64 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT864A MT8VDDT864A, MT16VDDT1664A MT16VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES · 184-pin dual in-line memory modules (DIMM) · Utilizes 100 MHz and 133 MHz DDR SDRAM components · ECC-optimized pinout · 64MB (8 Meg x 64), 128MB 128MB (16 Meg x 64) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK e ... | Original |
23 pages, |
U10-U17 datasheet abstract |
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| Abstract: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM MT46V32M4 MT46V32M4 8 Meg x 4 x 4 banks MT46V16M8 MT46V16M8 4 Meg x 8 x 4 banks MT46V8M16 MT46V8M16 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/ddrsramds.html FEATURES PIN ASSIGNMENT (TOP VIEW) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has ... | Original |
69 pages, |
MT46V8M16 MT46V32M4 MT46V16M8 MT46 DDR266A datasheet abstract |
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| Abstract: Fujitsu Microelectronics Europe Application Note MCU-AN-300016-E-V10 MCU-AN-300016-E-V10 FR FAMILY 32-BIT 32-BIT MICROCONTROLLER MB88121 MB88121, MB91460 MB91460 INTERFACING MB91460 MB91460 TO MB88121 MB88121 APPLICATION NOTE Interfacing MB91460 MB91460 TO MB88121 MB88121 Revision History Revision History Date 2008-03-28 Issue V1.0, MSt First draft This document contains 56 pages. MCU-AN-300016-E-V10 MCU-AN-300016-E-V10 -2- © Fujitsu Microelectronics Europe GmbH Interfacing MB91460 MB91460 TO MB88121 MB88121 Warranty and Disclaimer Warranty and Disclaime ... | Original |
56 pages, |
MB91F467D MB91460 MB88121B FR460 MB88121 FR360 MCU-AN-300016-E-V10 32-BIT MCU-AN-300016-E-V10 abstract |
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| Abstract: 8, 16, 32 MEG x 72 BUFFERED DRAM DIMMs DRAM MODULE MT9LD(T)872(F)X, MT18LD MT18LD(T)1672(F)(D)X, MT36LD MT36LD(T)3272(C)(F)X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES · JEDEC-standard ECC pinout in a 168-pin, dual inline memory module (DIMM) · 64MB (8 Meg x 72), 128MB 128MB (16 Meg x 72), and 256MB 256MB (32 Meg x 72) · High-performance CMOS silicon-gate process · Single +3.3V ±0.3V power supply · All inputs, outputs, and cloc ... | Original |
28 pages, |
168-PIN 128MB 256MB 128MB abstract |
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| Abstract: HY5DU283222AQ HY5DU283222AQ 128M(4Mx32) DDR SDRAM HY5DU283222AQ HY5DU283222AQ Revision 0.1 April 2003 Rev. 0.1 / Apr. 2003 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ Revision History 1. Revision 0.1 (Apr. 2003) 1) Preliminary Rev. 0.1 / Apr. 2003 2 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ CONTENTS 1. 4Mx32 DDR SDRAM Brief Information - ... | Original |
50 pages, |
HY5DU283222Q-5 HY5DU283222Q-4 HY5DU283222AQ HY5DU283222AQ abstract |
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| Abstract: HY6V22F HY6V22F 128M(4Mx32) DDR SDRAM HY6V22F HY6V22F Revision 0.5 June 2001 Rev. 0.5 / June. 01 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY6V22F HY6V22F Revision History 1. Rev 0.4 ( May.01) - Part Number changed from HY5DV283222F HY5DV283222F to HY6V22F HY6V22F 2. Rev 0.5 (Jun.15) - tAC / tDQSCK / tRCD / tRP / tDAL would be changed the followings -33 -4 -45 Items From To From To From To tAC +/-0. ... | Original |
50 pages, |
HY6V22F-33 HY6V22F HY6V22F abstract |
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| Abstract: HY5DU283222AQ HY5DU283222AQ 128M(4Mx32) DDR SDRAM HY5DU283222AQ HY5DU283222AQ Revision 0.1 April 2003 Rev. 0.1 / Apr. 2003 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ Revision History 1. Revision 0.1 (Apr. 2003) 1) Preliminary Rev. 0.1 / Apr. 2003 2 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ CONTENTS 1. 4Mx32 DDR SDRAM Brief Information - ... | Original |
50 pages, |
HY5DU283222AQ HY5DU283222AQ abstract |
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