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Abstract: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval. 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory Quality Team Page 1 Preface & Contents SEC has been making continuous effort to enhance t ... Original
datasheet

45 pages,
852.85 Kb

K9S2808V0C-SSB0 K9F2808U0C-DCB0 k9f2808u0c K9F2808 K9F2808U0C-VIB0 EPOXY EMC TI 48-WSOP1 samsung NAND Flash DIE ir R300 K9F2808U0C-YIB0 K9F2808U0C-YCB0 63-TBGA NAND qualification datasheet abstract
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Abstract: o ro ain u lc t s o FA H LS E E D D P OD C S MB D E R U T D A MOD L S R M UE WitcId sr sB a c e ne n u t e rn h s i UA S L sA g ls C o n ee , A N rr s , e r i o co s G o ga Ps aa a , e J re ic tw y N w es y E rp uo e B a n c w i, ema y ru s h eg G r n Ai s a T ie, aw n ap iT i a K wo n H n K n o lo , o g o g S e z e , hn h n h n C ia WitcId sr sH a q atr ne n u t e e d u r s i e 6 5S c mo eD ie 7 ya r r , v Mi i s C 9 0 5 l t , A 53 pa T l(0 ... Original
datasheet

25 pages,
6884.1 Kb

samsung pcb 8Gb nand flash WD2SN01GX808 Samsung 8Gb MLC Nand flash hynix nand samsung MLC nand flashes 240 pin quad rank DIMM DDR3 connector DDR3 sodimm pcb layout Samsung 8Gb MLC 64gb nand flash hynix 64gb nand flash samsung wd2ue01Gx818 Hynix 64Gb Nand flash datasheet abstract
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Abstract: ADVANCE 8, 16 MEG x 64 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT864A MT8VDDT864A, MT16VDDT1664A MT16VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES · 184-pin dual in-line memory modules (DIMM) · Utilizes 100 MHz and 133 MHz DDR SDRAM components · ECC-optimized pinout · 64MB (8 Meg x 64), 128MB 128MB (16 Meg x 64) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK e ... Original
datasheet

23 pages,
458.67 Kb

MT16VDDT1664A U10-U17 datasheet abstract
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Abstract: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A MT9VDDT872A, MT18VDDT1672A MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES · 184-pin dual in-line memory module (DIMM) · Utilizes 100 MHz and 133 MHz DDR SDRAM components · ECC-optimized pinout · 64MB (8 Meg x 72), 128MB 128MB (16 Meg x 72) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK ed ... Original
datasheet

23 pages,
475.49 Kb

datasheet abstract
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Abstract: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM FEATURES · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two ­ one per byte) · Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with da ... Original
datasheet

68 pages,
2514.13 Kb

BA 5053 circuit diagram BA 5053 datasheet abstract
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Abstract: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM FEATURES · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two ­ one per byte) · Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data for WRITEs · ... Original
datasheet

70 pages,
2243.35 Kb

datasheet abstract
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Abstract: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM FEATURES · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two ­ one per byte) · Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle · Reduced output drive option on x16 · Differential clock inputs (CK and CK#) · Commands entered on each positive CK edge · DQS edge-aligned with ... Original
datasheet

67 pages,
2276.23 Kb

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Abstract: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM MT46V32M4 MT46V32M4 ­ 8 Meg x 4 x 4 banks MT46V16M8 MT46V16M8 ­ 4 Meg x 8 x 4 banks MT46V8M16 MT46V8M16 ­ 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/ddrsramds.html FEATURES PIN ASSIGNMENT (TOP VIEW) · VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V · Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has ... Original
datasheet

69 pages,
2345.19 Kb

MT46V8M16 MT46V32M4 MT46V16M8 MT46 DDR266A Bt 2313 datasheet abstract
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Abstract: 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX JR28F032M29EWXX; PZ28F032M29EWXX PZ28F032M29EWXX; JS28F064M29EWXX JS28F064M29EWXX PC28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX JR28F064M29EWXX; PZ28F064M29EWXX PZ28F064M29EWXX JS28F128M29EWXX JS28F128M29EWXX; PC28F128M29EWXX PC28F128M29EWXX; RC28F128M29EWXX RC28F128M29EWXX Features · Supply voltage ­ VCC = 2.7­3.6V (program, erase, read) ­ VCCQ = 1.65­3.6V (I/O buffers) · Asynchronous random or page read ­ Page size: 8 words or 16 bytes ­ Page access: 25ns ­ Random access: 60ns (BGA); 70ns (TSOP) · Buffer program: 256-w ... Original
datasheet

87 pages,
1047.45 Kb

JS28F128M29EWLA PZ28F032M29EWXX PZ28F032M29 PC28F064M29EWLA M29EW32 PZ28F032M29EWHA JR28F064M29EWXX JR28F032M29EWT JS28F064M29EWTA JS28F064M29 JS28F128M29EWHF JS28F128M29EWH JS28F128M29EWXX JR28F032M29EWXX PZ28F032M29EWXX JR28F032M29EWXX abstract
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Abstract: HY5DU283222AQ HY5DU283222AQ 128M(4Mx32) DDR SDRAM HY5DU283222AQ HY5DU283222AQ Revision 0.1 April 2003 Rev. 0.1 / Apr. 2003 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ Revision History 1. Revision 0.1 (Apr. 2003) 1) Preliminary Rev. 0.1 / Apr. 2003 2 128Mb (4Mx32) Double Data Rate SDRAM HY5DU283222AQ HY5DU283222AQ CONTENTS 1. 4Mx32 DDR SDRAM Brief Information - ... Original
datasheet

50 pages,
1459.63 Kb

HY5DU283222AQ5 HY5DU283222AQ HY5DU283222AQ-5 HY5DU283222AQ abstract
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