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LM4F110B2QRFIGR Texas Instruments 32-BIT, FLASH, 80MHz, RISC MICROCONTROLLER, PQFP64, ROHS COMPLIANT, PLASTIC, LQFP-64 visit Texas Instruments
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CD40110BPWR Texas Instruments SYN POSITIVE EDGE TRIGGERED 5-BIT BIDIRECTIONAL DISPLAY DRIVER COUNTER, PDSO16 visit Texas Instruments

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110B Datasheet

Part Manufacturer Description PDF Type
110B Allen-Bradley Cermet Resistor Networks, SIP Scan
110B05 Silec Semiconductors Shortform Data Book 1976 Scan
110B05 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110B1 Silec Semiconductors Shortform Data Book 1976 Scan
110B1 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110B2 Silec Semiconductors Shortform Data Book 1976 Scan
110B2 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110B4 Silec Semiconductors Shortform Data Book 1976 Scan
110B4 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110B6 Silec Semiconductors Shortform Data Book 1976 Scan
110B6 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110-B-63 N/A SWITCH SPST Original
110B8 Silec Semiconductors Shortform Data Book 1976 Scan
110B8 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110BHZ Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
110-BU Tyco Electronics Terminal Blocks - Accessories, Connectors, Interconnects, TERM BLOCK END SECTION NEMA GRAY Original
110-BU (1-1437392-8) Tyco Electronics Accessories ( Terminal Block ); 110-BU=100 series ( Buchanan ) Original

110B

Catalog Datasheet MFG & Type PDF Document Tags

philips Electrolytic Capacitor

Abstract: blf4g20-110b BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 - 23 January 2006 Product , ) BLF4G20-110B; BLF4G20S-110B Philips Semiconductors UHF power LDMOS transistor s Internally , information Table 2: Pinning Pin Description Simplified outline Symbol BLF4G20-110B (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym039 BLF4G20S-110B , Name Description Version BLF4G20-110B - flanged LDMOST ceramic package; 2 mounting
Philips Semiconductors
Original
BLF4G20S-110B ACPR400 ACPR600 philips Electrolytic Capacitor blf4g20-110b RF35 BLF4G20-110B

m 110b1

Abstract: ACPR400 BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 - 10 January 2006 Product data sheet 1 , Internally matched for ease of use BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor , information Type number Package Name BLF4G20LS-110B Description Version - earless , . 2006. All rights reserved. Rev. 01 - 10 January 2006 2 of 12 BLF4G20LS-110B Philips , 7.1 Ruggedness in class-AB operation The BLF4G20LS-110B is capable of withstanding a load mismatch
Philips Semiconductors
Original
BLF4G20LS-110B m 110b1 PHILIPS GSM I Q

semiconductors cross reference

Abstract: UGF18030 1805-1880 60 13 45 440171 BLF4G20-110B UGF18085 CW 26 1805-1880 85 13 53 BLF4G20-110B UGF18090 CW 26 1805-1880 90 13.5 52 BLF3G21-6 UGF2005 CW 26 , 12.5 36 440171 BLF4G20-110B UGF19085 N-CDMA 26 1930-1990 85 13 23 440171 BLF4G20-110B UGF19090 2-Tone 26 1930-1990 90 12 35 440174 BLF4G20
Philips Semiconductors
Original
BLF1043 BLF3G21-30 BLF1046 UPF14060 UPF16060 UGF16085 semiconductors cross reference UGF18030 BLC5G22-100 cw 180 UPF1010 UPF1030 UGF09030

P7T-110B

Abstract: CB417 -10.B/110.B_ THERMAL RESISTANCES Symbol Parameter Value Unit Rth Ã-0 Junction-leads on infinite heatsmk , -43 P7T-43B 5 43 50 62 75 5 90 8 115 74 10.3 620 P7T-110 P7T-110B 5 110 130 160 200 5 235 3 300 28 10.8 , temperature 2/5 123 P7T-10.B/110.B Figure 2 : Peak pulse power versus exponential pulse duration. Pp (W , results â  7^237 00b07flT flEE â  - 121 P7T-10.B/110.B Figure 4a : Capacitance versus reverse , 100 1000 4/5 123 P7T-10.B/110.B ORDER CODE P7T 10 B RL 700 W.J L PACKAGING: =
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OCR Scan
CB417 P7T-110B P7T-10B P7T-27 P7T-27B P7T-43 B/110

scale sensor

Abstract: sensor hybrid KM 110B H /2390 BLOCK DIAGRAM LIMITING VALUES In accordance with the Absolute , 110B H /2390 CHARACTERISTICS Tamb = 25 °C; Vcc = 5 V; R l > 25 ki2 and a homogeneous magnetic field , Objective specification Angle sensor hybrid KM 110B H /2390 Fig.3 Optimum magnet position relative , Objective specification Angle sensor hybrid KM 110B H /2390 Dimensions in mm. D, E and F: reference , Objective specification Angle sensor hybrid KM 110BH/2390 PACKAGE OUTLINE 20.3 + 0.20 - 0 .0
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OCR Scan
scale sensor KM110BH/2390 110BH/2390 BDB93

POLYFUSE

Abstract: R4291.25 LITTELFUSE MARKING 16R500G B Inches 0.33 16 0.28 110B XXXX 0.35 mm Inches D Single Sided , E E 0.20 C Littelfuse11.00 Voltage Littelfuse Littelfuse 16 Voltage Rating 7.10 0.43 110B , 110U Current Rating 110B XXXX Inches Max. 0.12 Physical Characteristics mm Lead (dia , Side Top Littelfuse Littelfuse Trademark Trademark 16 16 110B 110B XXXX XXXX Voltage
Littelfuse
Original
16R250G 16R300G 16R400G 16R600G 16R700G 16R800G POLYFUSE R4291.25 LITTELFUSE 0280 130 032 16R1000G E183209 R50082521

magnetic sensor 21 L

Abstract: Thin-film magnetic resistance 110B/4 MAX. 12 120 32 +150 +150 190 V UNIT mW kA/m °C °C °C 1. It is not permitted to press , specification Magnetic field sensor KM 110B/4 L N M S i i i- M S 1 i. N MGA102 M = , Philips Semiconductors Preliminary specification Magnetic field sensor PACKAGE OUTLINE KM 110B/4
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OCR Scan
magnetic sensor 21 L Thin-film magnetic resistance magnetic sensor circuit diagram magnetic speed sensor circuit diagram KM110B/4 FXD100 KMZ12B MLBB65 711062L 110B/4

PFZD 36

Abstract: BZW07-27B -376B I BZW07-10 * BZW07-110 1 BZW07-10B ♦ BZW07-110B i PZD 16 ♦ PZD 160 i , -10 ♦ BZW11-110 i BZW11-1QB * BZW11-110B â'¢ 1N 5629 ♦ 1N 5665 A 116 i , -210) BZW07-110 BZW07-110B 5 110 130 160 200 5 235 3 700 W / 1 ms expo. PZD 16 5 10 13 16 20 5 25 30 , -26 TZB 11OA BZW04-89 ZZY 160 BZW07-110B 133
-
OCR Scan
BZW04-5V5 BZW04-188 BZW04-202 BZW04-376 BZW04-5V5B BZW04-188B PFZD 36 BZW07-27B BZW06-154 BZW07-27 p6ke 528 PZD 36

75540-002

Abstract: MS-195A equipment for sockets on reel: fully automatic insertion machines computer-controlled MS 100; MS 110B; MS , medium-volume production requirements · Bench model · Pneumatically operated · Simple to operate M S-110B , in.) 356 x 610 mm (14 x 24 in.) 343 x 597 mm (13.5 x 23.5 in.) MS-110B 8000* 108 L/min. (3.8 scfm , (for strip-form terminals) M S-100A Manually-Operated Press MS-105B Sem i-Autom atic Machine M S-110B
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OCR Scan
MS-195A 75540-002 S110B drill holding machine notes 75540-001 MIL-C-21768 MS-110B S-110B

0B2 tube

Abstract: AF126 7 ^ 2 3 7 0DbD7S7 TST t/5 119 P7T-10.B/110.B_ THERMAL RESISTANCES Symbol Rth (H , Unidirectional P7T-10 P7T-27 P7T-43 P7T-110 Bidirectional P7T-10B P7T-27B P7T-43B P7T-110B ha V 25 53 90 , 7T2T237 00b07flT flEE - - 121 P7T-10.B/110.B Figure 4a : Capacitance , -10.B/110.B ORDER CODE P7T - 10 700 STAND-OFF VOI TA fìF t B RL L PACKAGING: = Ammopack RL =
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OCR Scan
0B2 tube AF126 CB472 CB473 DIL20 T0220AB 7TBT237
Abstract: sens (Continued) I (AMPS) t 50 55 70 @ T c (°C) 75 75 110 80 ITSM (AMPS) 500 500 1000 1600 ss f o l £1! CASE TO-218 ISOL TO-218 VRRM (VOLTS) 110 80 1 ! 1600 1 1 ISOLATED o a Jj T TO-65 TO-83 TO-94 200 CS218I-50B CS218-55B* CS65-70B CS83-110B CS94-110B 400 CS218I-50D CS218-55D* CS65-70D CS83-110D CS94-110D 600 CS218I-50M CS218-55M* CS65-70M CS83-110M CS94-110M 800 -
OCR Scan
CS83-110B CS94-110B CS218I-50N CS218-55N CS65-70N CS83-110N

CS83-110N

Abstract: TO83 CS65-70B CS65-70D CS65-70M CS65-70N CS65-70P CS65-70PB 100mA 3.0V 200mA CS83-110B CS83-110D CS83-110M CS83-110N CS83-110P CS83-110PB 100mA 3.0V 100mA CS94-110B CS94-110D CS94-110M CS94-110N CS94
Central Semiconductor
Original
TO83 CS218I-50P CS218I-50PB CS218-55P CS218-55PB CS94-110P CS94-110PB

58RDX

Abstract: internal flash corruption Security-Status bits (SFST[7:5]) will read 001b or 110b. Level 3 hard lock/hard lock security level can be , 3 hard lock/SoftLock (110b) from security level 2 SoftLock/SoftLock (100b). The following code , / SST89E/V516RDx in security level 3 hard lock/SoftLock (110b) from security level 3 SoftLock/SoftLock , in level 3 is 110b, then only security level 4, hard lock/hard lock, can be reached. Table 7-2 , 0) 010b New SFST[7:5] value 001b/110b 3 (Hard Lock/SoftLock) 110b 110b T7-1.0 2040
Silicon Storage Technology
Original
58RDX internal flash corruption SST89E/V516RD SST89E/V58RD SST89E/V564RD SST89E/V554RC S72040-03-000
Abstract: (Continued) I (AMPS) t 50 55 70 ® T C (°C ) 75 75 110 80 80 ITSM (AMPS) 500 500 1000 1600 1600 110 â'" .© I f II M CASE TO-218 ISOL VRRM (VOLTS) S i f TO-218 i: 4jf ISOLATED TO-65 TO-83 TO-94 200 CS218I-50B CS218-55Bâ'™ CS65-70B CS83-110B CS94-110B 400 CS218I-50D CS218-55D* CS65-70D CS83-110D CS94-110D 600 CS218I-50M CS218-55M* CS65-70M CS83-110M CS94 -
OCR Scan

cs83

Abstract: to94 SCRs (Continued) IT (AMPS) 50 55 70 110 @ TC (oC) 75 75 110 80 80 ITSM (AMPS) 500 500 1000 1600 1600 CASE TO-218 ISOL TO-218 TO-65 TO-83 TO-94 VRRM (VOLTS) ISOLATED 200 CS218I-50B CS218-55B* CS65-70B CS83-110B CS94-110B 400 CS218I-50D CS218-55D* CS65-70D CS83-110D CS94-110D 600 CS218I-50M CS218-55M* CS65-70M CS83-110M CS94-110M 800 CS218I-50N CS218-55N* CS65-70N CS83-110N CS94
Central Semiconductor
Original
cs83 to94

CS218-55B

Abstract: CS218-55D sens (Continued) IT (AMPS) 50 55 70 110 @ Tc (°C) 75 75 110 80 80 ITSM (AMPS) 500 500 1000 1600 1600 1 » # * CASE TO-218 ISOL TO-218 TO-65 TO-83 TO-94 VRRM (VOLTS) ISOLATED 200 CS218I-50B CS218-55B* CS65-70B CS83-110B CS94-110B 400 CS218I-50D CS218-55D* CS65-70D CS83-110D CS94-110D 600 CS218I-50M CS218-55M* CS65-70M CS83-110M CS94-110M 800 CS218I-50N CS218-55N* CS65-70N CS83-110N CS94-110N 1000 CS218I-50P CS218-55P* CS65-70P CS83-110P CS94-110P 1200 CS218I-50PB CS218-55PB* CS65-70PB CS83
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OCR Scan

RAC-110B-T-3D3V

Abstract: RAC110 RAC-110B-T-3D3V G Description: Telecom server case 6 7 8 9 1 2 3 4 5 , ., Middlesex, New Jersey 08846 Phone 732 469-5720 888 288-5152 Fax 732 469-1919 RAC-110B-T-3D3V G
Central Components Manufacturing
Original
RAC-110B-T-3D3V RAC110

BL51

Abstract: DS5250 (A17-A0 enabled) ; 110B = 512kB (A18-A0 enabled) ; 111B = 1MB (A19-A0 enabled) ; other = invalid , CE0 ; 101B = enable CE0, CE1 ; 110B = enable CE0, CE1, CE2 ; 111B = enable CE0, CE1, CE2, CE3 , none ; 100B = enable PCE0 ; 101B = enable PCE0, PCE1 ; 110B = enable PCE0, PCE1, PCE2 ; 111B = , earlier specified. SA IDM CMA EQU 1 EQU 2 EQU 1 P4CNT5_3 P4CNT2_0 P5CNT2_0 EQU 110B EQU 101B EQU 110B ; ; ; ; ; ; ; Use 1KB stack in on-chip XDATA space 2 = 4KB on-chip SRAM
Dallas Semiconductor
Original
DS80C390 DS80C400 DS5240 DS5250 AN606 BL51 CE013 AX51 07FFFFH 080000H

BZW11-1QB

Abstract: lpp 97 -376B I BZW07-10 * BZW07-110 1 BZW07-10B ♦ BZW07-110B i PZD 16 ♦ PZD 160 i , -10 ♦ BZW11-110 i BZW11-1QB * BZW11-110B â'¢ 1N 5629 ♦ 1N 5665 A 116 , 17,5 BZW 11-43 BZW11-43B 5 43 50 62 75 5 97,8 10 jM BZW11-110 BZW11-110B 5 110 130 160 200 5 260
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OCR Scan
BZW04-202B BZW04-376B BZW06-5V5 BZW06-188 BZW06-202 lpp 97 BZW06-376

T4A/250V

Abstract: T4A 250V · VPD-110B 100W 2, 4 Output Switching Supply Features ·Universal AC input / Full range ·Protections:Short circuit/Over load/Over voltage ·Cooling by free air convection ·With power good signal output(Optional) ·100% full load burn-in test ·Fixed switching frequency at 45KHz ·2 year warranty , , 9615 SW Allen Blvd Suite 103, Beaverton, OR 97005 www.v-infinity.com 1-866-372-1258 · VPD-110B , +12V PD-110B +5V +24V 165.1 5 T4A/250V 3 1 12 107.95 CN1 95.25 Terminal Pin
V-Infinity
Original
VPD-110B T4A 250V 264VAC 370VDC 100VAC A/240VAC 500VDC

Frankfurt Oder

Abstract: A110 -10.B/110.B_ THERMAL RESISTANCES Symbol Parameter Value Unit Rth Ã-0 Junction-leads on infinite heatsmk , -43 P7T-43B 5 43 50 62 75 5 90 8 115 74 10.3 620 P7T-110 P7T-110B 5 110 130 160 200 5 235 3 300 28 10.8 , temperature 2/5 123 P7T-10.B/110.B Figure 2 : Peak pulse power versus exponential pulse duration. Pp (W , results â  7^237 00b07flT flEE â  - 121 P7T-10.B/110.B Figure 4a : Capacitance versus reverse , 100 1000 4/5 123 P7T-10.B/110.B ORDER CODE P7T 10 B RL 700 W.J L PACKAGING: =
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OCR Scan
Frankfurt Oder A110 DSAGER0007 Scans-048 frankfurt

B40C

Abstract: B80C600 3 hard lock/SoftLock (110b) from security level 2 SoftLock/SoftLock (100b). The following code , / SST89E/V516RDx in security level 3 hard lock/SoftLock (110b) from security level 3 SoftLock/SoftLock , Security-Status bits (SFST[7:5]) will read 001b or 110b. Level 3 hard lock/hard lock security level can be , in level 3 is 110b, then only security level 4, hard lock/hard lock, can be reached. Table 7-2 , 0) 010b New SFST[7:5] value 001b/110b 3 (Hard Lock/SoftLock) 110b 110b T7-1.0 2040
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OCR Scan
B125C B250C B40C B80C600 B80C KA DIODE B40C600 B380C
Abstract: -43B BZW11-110B B S S 5 10 27 43 110 13 29,6 50 130 16 36 62 160 20 43,5 75 200 5 5 5 5 26 56,5 97,8 260 38,5 , ZWli -1 1R 1 B Z iti- 43R 'â'"BZW11-110B I Unisonic Technologies
Original
3N60L 3N60- 3N60L- QW-R502-110

bb36931

Abstract: bb 36 931 W2 W1 W0 ≠ 110b, then M = 0 = ISRC mode disabled, M = 1 = ISRC mode enabled If W2 W1 W0 = 110b , 011b = Point B target DAC 100b = Step mode settings 101b = PWM settings 110b = Point C target DAC , a switching frequency of 1 MHz and a PWM waveform slope (slew slope) of MAX. The W2W1W0 = 110b register controls PWM or linear operation by modifying the M bit. When modifying the W2W1W0 = 110b M bit, it is also possible to update the point C DAC code in register W2W1W0 = 110b for quick autofocus
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OCR Scan
bb36931 bb 36 931 BB36-931 BD37931 BA36931 ba 37 931 125C-600 B250C-600 20C-1200 125C-1200 B250C-1200 B380C-1200

SP126

Abstract: 1805-1880 60 13 45 440171 BLF4G20-110B UGF18085 CW 26 1805-1880 85 13 53 BLF4G20-110B UGF18090 CW 26 1805-1880 90 13.5 52 BLF3G21-6 UGF2005 CW 26 , 12.5 36 440171 BLF4G20-110B UGF19085 N-CDMA 26 1930-1990 85 13 23 440171 BLF4G20-110B UGF19090 2-Tone 26 1930-1990 90 12 35 440174 BLF4G20
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OCR Scan
SP126 EIA-RS481A IEC286-3 T2222A T2369 T2907 Z5242B
Abstract: Std BLOCKED READ/WRITE 110b 110b 110b 010b 000b Any value[1] Table 6 or Secret[2] 00h READ-ONLY 110b 110b N.A. [3] 010b 010b N.A. [3] 00h Mifare Std READ-ONLY 011b 110b Any value[1] 100b 010b Any value[1] Table 6 or Secret[2] 00h Mifare Std BLOCKED READ-ONLY 110b 110b 110b Any value[1] Table 6 or Secret[2] 00h Data area VI TELEFILTER
Original

pj marking transil

Abstract: pj-25 diode ISOURCE output is Low. 1 = Current output is active. If W2 W1 W0 ≠ 110b, then M = 0 = ISRC mode disabled, M = 1 = ISRC mode enabled If W2 W1 W0 = 110b, then M = 0 = PWM output operation, M = 1 = linear , settings 101b = PWM settings 110b = Point C target DAC D9 to D0 Data bits Register data , MHz and a PWM waveform slope (slew slope) of MAX. The W2W1W0 = 110b register controls PWM or linear operation by modifying the M bit. When modifying the W2W1W0 = 110b M bit, it is also possible to update the
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OCR Scan
BZW11-10 BZW11-110B pj marking transil pj-25 diode thomson diodes capacite 335 BZW11-10B BZW11 W/8-20

BD649

Abstract: BD647 W0 110b, then M = 0 = ISRC mode disabled, M = 1 = ISRC mode enabled If W2 W1 W0 = 110b, then M = 0 = , B target DAC 100b = Step mode settings 101b = PWM settings 110b = Point C target DAC D9 to D0 , waveform slope (slew slope) of MAX. The W2W1W0 = 110b register controls PWM or linear operation by modifying the M bit. When modifying the W2W1W0 = 110b M bit, it is also possible to update the point C DAC code in register W2W1W0 = 110b for quick autofocus target position changes. M = 1 = linear operation
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OCR Scan
BD647 BD649 TL 2262 BD64S 00m0 BD643 BD645 TQ-220AB 220AB
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