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1 - 50 of about 849 for 110A |
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First line: THROUGH-HOLE RADIAL SLUG CORE POWER CHOKES AIRD-110A B SERIES FEATURES High Saturation Material Abstract: .. AIRD-110A&B SERIES. FEATURES: OPTIONS: COMMON APPLICATIONS: High Saturation Material Bulk Packaging is Standard Switching Regulators. Polyolefin Shrink Tubing Custom Design Available RFI .. datasheet abstract.. |
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First line: THROUGH-HOLE RADIAL LEADED INDUCTOR AIRD-110A B SERIES STANDARD SPECIFICATIONS Part Number µH IDC5 Abstract: .. AIRD-110A-1R0K-25 1.0 25 0.002 0.60/15.2 0.68/17.3 0.42/10.7 0.068/1.73. AIRD-110A-1R0K-10 1.0 10 0.002 0.50/12.7 0.75/19.1 0.42/10.7 0.054/1.37. AIRD-110A-3R3K-10 3.3 10 0.005 0.5/12 .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea V SD I F = 110A, VGS = 0 V 0.93 1.1 V. Dynamic b. Input Capacitance Ciss 6750 6800. Output Capacitance Coss 1085 1110. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 10V, f = 1MHz. 681 690 .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N04-02L Vishay Siliconix N-Channel 40-V D-S 200°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea VSD IS = 110A, VGS = 0 V 0.93 1.1 V. Dynamic b. Input Capacitance Ciss 7169 7300. Output Capacitance Coss 1394 1380. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 889 930 .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 200°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltage a VSD IS = 110A, VGS = 0 V 0.93 1.1 V. Dynamic b. Input Capacitance Ciss 7380 7500. Output Capacitance Coss 1079 1050. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1 MHz. 616 700 .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N08-07L Vishay Siliconix N-Channel 75-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea VSD IF = 110A, VGS = 0 V 0.93 1 V. Dynamic b. Input Capacitance Ciss 4700 4420. Output Capacitance Coss 678 700. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 330 310. pF. Total .. datasheet abstract.. |
238.42 Kb |
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First line: SPICE Device Model SUM110N05-06L Vishay Siliconix N-Channel 55-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea VSD IF = 110A, VGS = 0 V 0.93 1 V. Dynamic b. Input Capacitance Ciss 3313 3300. Output Capacitance Coss 633 625. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 267 310. pF. Total .. datasheet abstract.. |
246.22 Kb |
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First line: Tag-it Environmental Effects Transponder Inlays Application Note 11-09-26-001 March Tag-it Environmental Effects Abstract: .. Figure 1: Transponder RI-I01-110A-00 .. .. 6. Figure 2: Transponder RI-I02-110A-00 .. .. 6 .. datasheet abstract.. |
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First line: terminals splices INSULATED DISCONNECT TERMINAL Female Vinyl-insulated with copper sleeve Applicable Wire Abstract: .. VDADF1.25-110A-8. VDADF1.25-110A-5. VDADF1.25-187A-8. VDADF2-187A-8. VDADF1.25-250A. VDADF2-250A. VDADF5.5-250A. B2.8-1. A2.8-1. 4.8-1. 4.8-2.5. 6.3-1. 6.3-2.5. 6.3-6. 18.4 .724 18.4 .724 .. datasheet abstract.. |
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First line: MOSFET MODULE FEATURES Dual FETs Separated Circuit Dual 110A / 500V OUTLINE DRAWING Abstract: .. MOSFET MODULE MODULE MODULE MODULE Dual 110A /500V Dual 110A /500V Dual 110A /500V Dual 110A /500V P2HM1102H P2HM1102H P2HM1102H P2HM1102H. MAXMUM RATINGS Ratings Symbol P2HM1102H Unit. Drain .. datasheet abstract.. |
65.01 Kb |
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First line: SPICE Device Model SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Forward Transconductancea g fs VDS = − 15V, ID = − 110A 120 S. Diode Forward Voltagea V SD IS = − 85A, VGS = 0V - 0.92 - 1 V. Dynamic b. Input Capacitance Ciss 11170 11400. Output Capacitance Coss 1248 1200. Reverse .. datasheet abstract.. |
175.58 Kb |
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First line: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Forward Transconductancea g fs VDS = − 15V, ID = − 110A 163 S. Diode Forward Voltagea V SD IS = − 85A, VGS = 0V - 0.92 - 1 V. Dynamic b. Input Capacitance Ciss 11030 11200. Output Capacitance Coss 1619 1650. Reverse .. datasheet abstract.. |
180.59 Kb |
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First line: SPICE Device Model SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea V SD I F = 110A, VGS = 0V 0.93 1.1 V. Dynamic b. Input Capacitance Ciss 4580 4300. Output Capacitance Coss 782 770. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 342 365. pF .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N08-10 Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS N-Channel Abstract: .. Forward Voltagea VSD IF = 110A, VGS = 0 V 0.92 1 V. Dynamic b. Input Capacitance Ciss 5252 5250. Output Capacitance Coss 722 700. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 313 310. pF. Total .. datasheet abstract.. |
191.19 Kb |
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First line: SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 200°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltage a VSD IS = 110A, VGS = 0 V 0.92 1 V. Dynamic b. Input Capacitance Ciss 7663 7900. Output Capacitance Coss 936 950. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1 MHz. 406 550. Pf. Total .. datasheet abstract.. |
198.14 Kb |
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First line: SPICE Device Model SUM110N03-03P Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. Forward Voltagea VSD IF = 110A, VGS = 0 V 0.93 1.1 V. Dynamic b. Input Capacitance Ciss 11410 12100. Output Capacitance Coss 811 1910. Reverse Transfer Capacitance Crss. VGS = 0V, VDS = 25V, f = 1MHz. 498 1250 .. datasheet abstract.. |
234.3 Kb |
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First line: Ordering number ENN6947 Notice Designation Maintenance Obsolete Thick-Film Hybrid Affected products Products Abstract: .. STK405-110A STK407-250 STK4192MK2. STK405-120 STK407-270 STK4201MK2. STK407-040 STK407-290 STK4211MK2. STK407-040E STK408-040E STK4221MK2. STK407-050 STK408-050E STK4231MK2. STK407-050E .. datasheet abstract.. |
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First line: LTM-110A Line Interface 56kbps Modem Transformer Features designed V.90 applications 56kbps very Abstract: .. LTM-110A Line Interface 56kbps Modem Transformer. Features • designed for V.90 applications 56kbps • very low distortion • wide frequency range with flat response • meets IEC 60950 Supplementry .. datasheet abstract.. |
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First line: CONTROLS CONTROLS SERIES ALTERNATING RELAY listed recognized Duplex Alternating Control SPDT DPDT Abstract: .. INPUT POWER 24A = 24 VAC/DC 110A = 110 VAC 220A = 220 VAC. WIRING DIAGRAM: ORDERING INFORMATION: The electronic alternating relay is designed to replace mechanical style devices used in control .. datasheet abstract.. |
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First line: TrenchT2 Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2-7 VDSS ID25 RDS on Abstract: .. IF = 110A, VGS = 0V -di/dt = 100A/μs VR = 20V. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by .. datasheet abstract.. |
164.71 Kb |
6 Pages |
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First line: TrenchT2 Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2 IXTP220N04T2 VDSS ID25 Abstract: .. IF = 110A, VGS = 0V -di/dt = 100A/μs VR = 20V. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by .. datasheet abstract.. |
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First line: Control Relays Series Liquid Level Control Pump Down Control Relay Indicator 4.7k Abstract: .. PJR 110A PJRX110A LJR2110A. 110A VAC 110A VAC 110A VAC. SPDT. DPDT Crosswired DPDT. 8 pin plug-in 8 pin plug-in 11pin plug-in. 39.00 44.56 44.56. IRT Series Current Control Relay • Automatic or Manual .. datasheet abstract.. |
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First line: THROUGH-HOLE RADIAL SHIELDED CHOKES AISR- FEATURES Wire-wound Construction Ferrite Shield Excellent Heat Abstract: .. AIRD-110A&B SERIES. FEATURES: OPTIONS: COMMON APPLICATIONS: High Saturation Material Bulk Packaging is Standard Switching Regulators. Polyolefin Shrink Tubing Custom Design Available RFI .. datasheet abstract.. |
407.11 Kb |
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First line: TAB-IN / TAB-IN-TAB TERMINAL Tab-in type Applicable wire Model STI-51-250N STI-51T-250N Standard Insulation O.D. Abstract: .. SIM-01 T -110A. SIM-41 T -110B. 10,000. Mating tab. W. L. E. T. Note: 1. Combine a plated tab-in .. SIM-01-110A. SIM-01T-110A. SIM-41-110B. SIM-41T-110B. 0.3 to 0.5. 0.5 to 1.25. 22 to 20. 20 to 16. 2.1 to .. datasheet abstract.. |
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First line: Solid State Devices Inc. Valley View Blvd Mirada Phone 404-7855 Fax 404-1773 Abstract: .. VGS = 10V VDS = 30V ID = 110A RG = 2.5O. td on tr td off tf. –– –– –– –– 25 135 85 150. 35 200 125 225. nsec. Diode Forward Voltage. IF = 110A, VGS = 0V VSD –– 1.1 1.5 V. Diode Reverse Recovery Time Peak Reverse Recovery .. datasheet abstract.. |
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First line: Solid State Devices Inc. Valley View Blvd Mirada Phone 404-7855 Fax 404-1773 Abstract: .. VGS = 10V VDS = 35V ID = 110A RG = 2.5O. td on tr td off tf. –– –– –– –– 25 210 70 170. 50 300 125 275. nsec. Diode Forward Voltage. IF = 110A, VGS = 0V VSD –– 1.1 1.5 V. Diode Reverse Recovery Time Peak Reverse Recovery .. datasheet abstract.. |
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First line: Advance Technical Information High Voltage High Gain BiMOSFET Monolithic Bipolar Transistor IXBK55N300 Abstract: .. Resistive Switching Times, TJ = 125°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2Ω. Resistive Switching Times, TJ = 25°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2Ω. Reverse Diode. Symbol Test Conditions Characteristic .. datasheet abstract.. |
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First line: IRLBA1304 / P HEXFET Power MOSFET Logic-Level Gate Drive Ultra On-Resistance Same outline TO-220 Abstract: .. É ISD ≤ 110A, di/dt ≤ 170A/μs, VDD ≤ V BR DSS, TJ ≤ 175°C. Notes: Ç Starting TJ = 25°C, L = 230μH RG = 25Ω, IAS = 100A. See Figure 12 Ñ Pulse width ≤ 300μs; duty cycle ≤ 2%. S. D. G. Parameter Min. Typ. Max. Units .. datasheet abstract.. |
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First line: 91842A IRLBA1304 HEXFET Power MOSFET Logic-Level Gate Drive Ultra On-Resistance Same outline Abstract: .. É ISD ≤ 110A, di/dt ≤ 170A/μs, VDD ≤ V BR DSS, TJ ≤ 175°C. Notes: Ç Starting TJ = 25°C, L = 230μH RG = 25Ω, IAS = 100A. See Figure 12 Ñ Pulse width ≤ 300μs; duty cycle ≤ 2%. S. D. G. Parameter Min. Typ. Max. Units .. datasheet abstract.. |
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First line: RADIO FREQUENCY IDENTIFICATION SYSTEMS Data Sheet Tag-it Transponder Inlay Square Specifications Part Abstract: .. Part Number RI-I01-110A RI-I11-110A. Recommended Operating frequency 13.56 MHz. Passive Resonance Frequency at +25°C 14.36 MHz ± 200kHz includes frequency offset to compensate further .. datasheet abstract.. |
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First line: THYRISTOR MODULE PK PDPEKK 110F UL E76102 Power Thyristor / Diode Module PK110F series designed various rectifier Abstract: .. IT 110A IG 100mA Tj 25 VD 1 2VDRM dIG/dt 0.1A/ s. 0.25. mA/V V. 10. Tj 125 , VD 2 3VDRM, Exponential wave. Tj 25. IL Lutching Current, typ. Rth j-c Thermal Impedance, max. Tj 25. Junction to case. 500. s. V/ s. 50 mA .. datasheet abstract.. |
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First line: RADIO FREQUENCY IDENTIFICATION SYSTEMS Data Sheet Tag-it Transponder Inlay Rectangle Large Specifications Abstract: .. Part Number RI-I02-110A RI-I12-110A. Recommended Operating frequency 13.56 MHz. Passive Resonance Frequency at +25°C 14.36 MHz ± 200kHz includes frequency offset to compensate further .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N03-03 Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. VDD = 15V, RL = 0.18Ω ID ≅ 110A, VGEN = 10V, RG = 2.5Ω. 52 25. Ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N04-03P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS Abstract: .. VDD = 30V, RL = 0.27Ω ID ≅ 110A, VGEN = 10V, RG = 2.5Ω. 39 55. Ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating .. datasheet abstract.. |
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First line: SPICE Device Model SUM110N04-03 Vishay Siliconix N-Channel 40-V D-S 200°C MOSFET CHARACTERISTICS Abstract: .. VDD = 30V, RL = 0.27Ω ID ≅ 110A, VGEN = 10V, RG = 2.5Ω. 128 110. Reverse Recovery Time trr IF = 85A, di/dt = 100A/μs 52 60. ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2% b. Guaranteed by design, not .. datasheet abstract.. |
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First line: Ordering number Announcement Regarding Discontinuation Hybrid Products Thank using SANYO semiconductor products. Abstract: .. STK405-110A. STK405-120. STK405-120A. STK405-120A-E. STK405-130A. STK407-040. Affected .. datasheet abstract.. |
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First line: Ordering number Announcement Regarding Discontinuation Hybrid Products Thank using SANYO semiconductor products. Abstract: .. STK396-110A-E STK412-220AC-E STK413-230C-E STK621-431A-E. STK396-120-E STK412-230B-E STK413-230-E STK621-515-E. STK396-130-E STK412-230C-E STK413-420-E STK740-230-E. STK402-050S .. datasheet abstract.. |
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First line: TRIAC ISOLATED TYPE TMG10C40 / 60F UL E76102 TMG10C40 / 60F isolated mold triac suitable wide range Abstract: .. IT RMS 10A High surge capability 110A Full molded isolated type Three types of lead forming. 6. TMG10C40/60F .. datasheet abstract.. |
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First line: High-power filter 280A current ratings 440V 520V versions High differential / common mode attenuation Abstract: .. up to 110A up to 110A up to 110A. FN 351 -5 /?? FN 351 -8 /?? FN 351H -8 /?? FN 351 -16 /?? FN 351H -16 /?? FN 351 -25 /?? FN 351H -25 /?? FN 351 -36 /?? FN 351H -36 /?? FN 351 -50 /?? FN 351H -50 /?? FN 351 -64 /?? FN 351H .. datasheet abstract.. |
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First line: Features VPD-110A 100W Output Switching Supply input Full range circuit / Over load / Over voltage Abstract: .. . • VPD-110A 100W 2, 4 Output Switching Supply. V-Infinity, LLC, 9615 SW Allen Blvd Suite 103, Beaverton, OR 97005 www.v-infinity.com 1-866-372-1258. CH1 CH2. DC output voltage 5V 12V. Output .. datasheet abstract.. |
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First line: 91843A IRLBL1304 HEXFET Power MOSFET 1mm lower profile than D2Pak Same footprint Abstract: .. Coefficient ‐‐‐ 0.043 ‐‐‐ V/°C Reference to 25°C, ID = 1mAÜ ‐‐‐ ‐‐‐ 0.0045 VGS = 10V, ID = 110A Ñ. ‐‐‐ ‐‐‐ 0.0065 VGS = 4.5V, ID = 93 Ñ. VGS th Gate Threshold Voltage 1.0 ‐‐‐ ‐‐‐ V VDS = VGS, ID = 250μA. gfs .. datasheet abstract.. |
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First line: 97031C IRF2907ZS-7PPbF Features Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Abstract: .. 11 . Limited by TJmax, starting TJ = 25°C, L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance .. datasheet abstract.. |
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First line: IRF2907ZS-7PPbF Features Advanced Process Technology Ultra On-Resistance 175°C Operating Temperature Fast Switching Abstract: .. 11 . Limited by TJmax, starting TJ = 25°C, L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance .. datasheet abstract.. |
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First line: -93906 PROVISIONAL IRFP2907 HEXFET Power MOSFET Advanced Process Technology Ultra On-Resistance Dynamic Abstract: .. C, ID = 1mA RDS on Static Drain-to-Source On-Resistance ‐‐‐ 0.00380.0045 Ω VGS = 10V, ID = 110A Ñ VGS th Gate Threshold Voltage 2.0 ‐‐‐ 4.0 V VDS = 10V, ID = 250μA. gfs Forward Transconductance 160 .. datasheet abstract.. |
134 Kb |
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First line: TrenchHV Power MOSFET HiPerFET N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 Abstract: .. ID25 = 110A. RDS on ≤ ≤ ≤ ≤ ≤ 24mΩ Ω Ω Ω Ω. Features. z. International standard package z Avalanche rated. Advantages. z. Easy to mount z Space savings z. High power density. Applications. z. DC-DC converters .. datasheet abstract.. |
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First line: Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH110N25T IXTV110N25TS VDSS Abstract: .. IXTH110N25T IXTV110N25TS VDSS = 250V ID25 = 110A. RDS on ≤ ≤ ≤ ≤ ≤ 24mΩ Ω Ω Ω Ω. Features. z. International standard packages z Avalanche rated. Advantages. z. Easy to mount z Space savings z. High power density .. datasheet abstract.. |
168.92 Kb |
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First line: Preliminary Technical Information TrenchT2 HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Abstract: .. VDSS = 150V ID25 = 110A. RDS on ≤ ≤ ≤ ≤ ≤ 13mΩ Ω Ω Ω Ω. G = Gate D = Drain. S = Source TAB = Drain. TO-247. G. D. S. TAB Features. z. International standard package z 175°C Operating Temperature z. High current handling .. datasheet abstract.. |
159.61 Kb |
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First line: Preliminary Technical Information TrenchT2 HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Abstract: .. IXFA110N15T2 IXFP110N15T2 VDSS = 150V ID25 = 110A. RDS on ≤ ≤ ≤ ≤ ≤ 13mΩ Ω Ω Ω Ω. DS100093 12/08 G = Gate D = Drain. S = Source TAB = Drain. Features. z. International standard packages z 175°C Operating Temperature .. datasheet abstract.. |
198.59 Kb |
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First line: Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated Abstract: .. IXFV110N25T IXFV110N25TS VDSS = 250V ID25 = 110A. RDS on ≤≤≤≤≤ 24mΩ Ω Ω Ω Ω. Features. z. International standard packages z Avalanche rated. Advantages. z. Easy to mount z Space savings z. High power density .. datasheet abstract.. |
179.23 Kb |
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First line: Preliminary Technical Information Polar Power MOSFET HiperFET N-Channel Enhancement Mode Avalanche Rated Abstract: .. VSD IF = 110A, VGS = 0V, Note 1 1.4 V. trr 200 ns. QRM 1.32 μC. IRM 18.8 A. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 .. datasheet abstract.. |
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