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1109 Keystone Electronics Corp 1109 visit Digikey Buy
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FP1109-R33-R Eaton Corporation General Purpose Inductor, 0.311uH, 10%, 1 Element, Ferrite-Core, SMD, 1109, CHIP, 1109, ROHS COMPLIANT visit Digikey Buy
FP1109-R58-R Eaton Corporation General Purpose Inductor, 0.548uH, 10%, 1 Element, Ferrite-Core, SMD, 1109, CHIP, 1109, ROHS COMPLIANT visit Digikey Buy
FP1109-R47-R Eaton Corporation General Purpose Inductor, 0.463uH, 10%, 1 Element, Ferrite-Core, SMD, 1109, CHIP, 1109, ROHS COMPLIANT visit Digikey Buy
FP1109-1R0-R Eaton Corporation General Purpose Inductor, 0.95uH, 10%, 1 Element, Ferrite-Core, SMD, 1109, CHIP, 1109, ROHS COMPLIANT visit Digikey Buy

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1109 Datasheet

Part Manufacturer Description PDF Type
1109 Laird Technologies RFI and EMI - Shielding and Absorbing Materials, RF/IF and RFID, RFSB,S,11.0 Original
1109002 Aries Electronics Sockets for ICs, Transistors, Connectors, Interconnects, SERIES 8XXX ELEVATOR SOCKET .200 Original
1109011 Aries Electronics Sockets for ICs, Transistors, Connectors, Interconnects, SERIES 513 LO-PRO W/SOLDER TAIL Original
1109-0-15-01-30-02-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-01-30-27-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-15-30-02-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-15-30-27-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-15-30-84-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-80-30-27-04-0 Mill-Max Receptacle With A Standard Tail Original
1109-0-15-80-30-84-04-0 Mill-Max Receptacle With A Standard Tail Original
110-90-210-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-304-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-306-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-308-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-308-41-105161 PRECI-DIP Dual-in-line sockets and headers / open frame / surface mount pick and place Original
110-90-310-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-314-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-314-41-105161 PRECI-DIP Dual-in-line sockets and headers / open frame / surface mount pick and place Original
110-90-316-41-105 PRECI-DIP Dual-in-line sockets and headers Open frame / surface mount Original
110-90-316-41-105161 PRECI-DIP Dual-in-line sockets and headers / open frame / surface mount pick and place Original
Showing first 20 results.

1109

Catalog Datasheet MFG & Type PDF Document Tags

K1022

Abstract: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 , voltage Collector-emitter voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~1109 RN1107~1109 RN1107~1109 RN1107~1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 , 2006-02-07 RN1107~1109 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut off current
Toshiba
Original
K1022 RN2107

BCL-405

Abstract: 8.50 mm² Wire Strip Length Terminal Eng No. (REF) In mm BCL-810-PL .437 11.09 BCL-814-PL .437 11.09 BCL-8516-PL .437 11.09 BCL-838-WP-PL .437 11.09 BCL-810 .437 11.09 BCL-814 .437 11.09 BCL-838-WP .437 11.09 BCL-8516 .437 11.09 BCL-812-XWP-PL .437 11.09 Die Insert Insert A , mm BCL-812-XWP .437 11.09 BCL-838-XWP .437 11.09 BCL-8516-WP .437 11.09 BCL-8516-WP-PL .437 11.09 BCL-838-XWP-PL .437 11.09 Insert A Insert A Insert A Insert A Insert A Wire
Molex
Original
BCL-405 E-406

19221-0229

Abstract: B 1038 Length In mm .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 Release , -6141-PL BCL-638-XWP-PL BCL-638-XWP UNCONTROLLED COPY 16.0 mm² Wire Strip Length In mm .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 .437 11.09 Die Insert
Molex
Original
19221-0229 B 1038 terminal lugs datasheet B 0411 marking 0229 BCL-1038-WP-PL BCL-81

1109 pc

Abstract: 1109 RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V , RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 °C Storage temperature range RN1107~1109 Tstg -55~150 °C 1 2001-06-07 RN1107~1109 Electrical Characteristics (Ta = 25°C) ° Symbol
Toshiba
Original
1109 pc

RN1108

Abstract: RN1109 RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V , RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 °C Storage temperature range RN1107~1109 Tstg , information contained herein is subject to change without notice. 2000-09-08 1/5 RN1107~1109
Toshiba
Original
961001EAA2
Abstract: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 , Collector-base voltage Collector-emitter voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base voltage RN1108 , RN1107~1109 RN1107~1109 RN1107~1109 RN1107~1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 , ~1109 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut off current RN1107~1109 , saturation voltage RN1107~1109 RN1107 Input voltage (ON) RN1108 RN1109 RN1107 Input voltage (OFF) RN1108 Toshiba
Original

1109

Abstract: RN1107,1108,1109 {RN1107) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT , RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage RN1107-1109 VCBO 50 Collector-Emitter Voltage RN1107-1109 VCEO 50 RN1107 6 Emitter-Base Voltage RN1108 7 vebo RN1109 15 Collector Current RN1107-1109 XC 100 Collector Power Dissipation R N 1107-U 09 PC 100 Junction Temperature RN1107-1109 Tj 150 -5 5 -1 5 0 Storage Temperature Range RN1107-1109 Tstf? UNIT V V V mA mW °C °C 93
-
OCR Scan
RN1107--1109 RN1107-1109 RNX107 80UMH 80HNH

D 1108

Abstract: EE-SX1107 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Ultra-Compact , 0.3 x 1.0 mm min. 0.1 g EE-SX1131 Dual channel transmissive 1 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Specifications s ABSOLUTE MAXIMUM RATING (TA=25° C) Item , VCC t 90% Output Output 10% RL tr 2 tf t EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Engineering Data Note: The operating conditions of the photomicrosensor must be
OMRON
Original
EE-SX1107 EE-SX1108 EE-SX1109 D 1108 EE-SX1107/1108/1109/1131 1-800-55-OMRON E05DAX4

EE-SX1108

Abstract: EE-SX1107 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Ultra-Compact , 0.3 x 1.0 mm min. 0.1 g EE-SX1131 Dual channel transmissive 1 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Specifications s ABSOLUTE MAXIMUM RATING (TA=25° C) Item , VCC t 90% Output Output 10% RL tr 2 tf t EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Engineering Data Note: The operating conditions of the photomicrosensor must be
OMRON
Original
Abstract: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , Rating Unit Collector-base voltage RN1107 to 1109 VCBO 50 V Collector-emitter voltage RN1107 to 1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107 to 1109 IC 100 mA Collector power dissipation RN1107 to 1109 PC 100 mW Junction temperature RN1107 to 1109 Tj 150 °C Toshiba
Original
Abstract: RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , °C) Characteristic Symbol Rating Unit Collector-base voltage RN1107 to 1109 VCBO 50 V Collector-emitter voltage RN1107 to 1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107 to 1109 IC 100 mA Collector power dissipation RN1107 to 1109 PC 100 mW Junction temperature RN1107 to 1109 Tj 150 °C Toshiba
Original

RN1107

Abstract: RN1108 RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , Unit Collector-base voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 °C Storage temperature range
Toshiba
Original

EE-SX1107

Abstract: EE-SX1108 EE-SX1107/1108/1109/1131 Ultra-Compact Photomicrosensors with Surface-Mount Design Surface , Dual channel transmissive EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Specifications , EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Engineering Data Note: The operating conditions of , /1109/1131 EE-SX1107/1108/1109/1131 SENSING POSITION CHARACTERISTICS (TYPICAL) EE-SX1108/1109 , /1108/1109/1131 EE-SX1107/1108/1109/1131 Recommended soldering pattern Pin assignment A C
OMRON
Original
M-025 lx EE-SX1108/EE-SX1131 E02DAD2

RN1107

Abstract: RN1108 RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108 , Rating Unit Collector-base voltage RN1107 to 1109 VCBO 50 V Collector-emitter voltage RN1107 to 1109 VCEO 50 V RN1107 Emitter-base voltage RN1108 6 VEBO 7 V 15 RN1109 Collector current RN1107 to 1109 IC 100 mA Collector power dissipation RN1107 to 1109 PC 100 mW Junction temperature RN1107 to 1109 Tj 150 °C
Toshiba
Original

RN1107

Abstract: RN1108 RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 , Collector-base voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO , current RN1107~1109 Ic 100 mA Collector power dissipation RN1107~1109 Pc 100 mW Junction temperature RN1107~1109 Tj 150 °C Storage temperature range RN1107~1109 Tstg -55~150 °C 1 2001-06-07 RN1107~1109 Electrical Characteristics (Ta = 25°C) ° Symbol
Toshiba
Original

ZXCT1107

Abstract: "Current Monitor" A Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS , Typical Application Circuit ZXCT1107/1109/1110 Document number: DS35033 Rev. 1 - 2 1 of 17 www.diodes.com MARCH 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXCT1107/1109 , can be used is 2.5V + VOUT (see applications section for more details). ZXCT1107/1109/1110 , Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS
Diodes
Original
ZXCT1107 ZXCT1110 ZXCT1107SA-7 ZXCT1107/1109/1110 ZXCT1107/09/10 ZXCT1109 ZXCT1107/09

ZXCT1109

Abstract: ZXCT1107 A Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS , management Over current monitor Power Management Typical Application Circuit ZXCT1107/1109/1110 , Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS Pin , that the input current limit into S+ or S- is not exceeded. ZXCT1107/1109/1110 Document number , Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS Recommended Operating
Diodes
Original
AEC-Q100 DS3503

3TF20

Abstract: IDEC HW1P caps only. 814-1022 AL6M-M24P-R Round Red DPDT 24 12.94 11.94 11.09 Featuring anti-teasing mechanism, fully compliant with 814-1023 AL6M-M24P-G Round Green DPDT 24 12.94 11.94 11.09 EN418 directives for emergency stop switches. 814-1025 AL6M-M24P-Y Round Yellow DPDT 24 12.94 11.94 11.09 814-1027 AL6Q-M13P-R , 814-1032 AL6Q-M23P-R Square Red DPDT 12 12.94 11.94 11.09 814-1036 AL6Q-M23P-W Square White DPDT 12 12.94 11.94 11.09 814-5122 HW1B-Y2F01-R Push pull, 40 mm mushroom 1NC 24.53 814-1037 AL6Q-M14P-R Square Red
Allied Electronics Catalog
Original
HW1S-3TF20 3TF20 IDEC HW1P 814-5128 814-1059 814-5025 HW1B-M1F10-B HW1B-M1F10-G HW1B-M1F10-R HW1B-M1F10-S HW1B-M1F10-Y HW1B-M1F11-B

C 2109 RM TO-3

Abstract: '" 1109 VCBO 50 V Collector-Emitter Voltage RN1107-1109 VCEO 50 V RN1107 Emitter-Base Voltage RN1108 6 Ve b o RN1109 7 V 15 Collector Current RN1107-1109 ic 100 mA Collector Power Dissipation RN1107â'" 1109 PC 100 mW Junction Temperature RN1107-1109 Tj 150 °C Storage Temperature Range RN1107-1109 T stg -5 5-150 °C , TEST CONDITION !CBO VCB = 50V, IE = 0 â'" â'" 100 nA !CEO RN1107-1109 V c e
-
OCR Scan
C 2109 RM TO-3 RN1107-RN

Zener Diodes CHARACTERISTICS

Abstract: ZXCT1109 A Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT MONITORS , Application Circuit ZXCT1107/1109/1110 Document number: DS35033 Rev. 3 - 2 1 of 16 www.diodes.com JULY 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW , . ZXCT1107/1109/1110 Document number: DS35033 Rev. 3 - 2 2 of 16 www.diodes.com JULY 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXCT1107/1109/1110 LOW POWER HIGH-SIDE CURRENT
Diodes
Original
Zener Diodes CHARACTERISTICS
Showing first 20 results.