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10mg

Catalog Datasheet MFG & Type PDF Document Tags

Alltech Associates

Abstract: ethanol . Dimethyl Phthalate: Dissolved in Ethanol:Hexane (5:95) 1.0mg/mL 1.0mg/mL 1.0mg/mL 2 8866 3
Alltech Associates
Original
1096U Alltech Associates ethanol 60015 toluene

RLT808_10MG

Abstract: RLT808-10MG ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 10 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V) VPDR 30 Features â'¢ Index Guided MQW Structure â'¢ Wavelength : 808 nm (Typ.) â'¢ Optical Power , 40 Po=10mW Astigmatism (μm) As * 11 * Po=10mW, NA=0.4 03.08.2010 rlt808_10mg
Roithner LaserTechnik
Original
RLT808_10MG RLT808-10MG

DF005M-G

Abstract: 005M-G 01M-G 02M-G 04M-G 06M-G Parameter Device Marking Code DF DF 08M-G 10M-G Unit , junction capacitance per leg at 4.0V, 1MHz DF DF DF DF 04M-G 06M-G 08M-G 10M-G Unit VF 1.1
Comchip Technology
Original
DF005M-G DF10M-G MILSTD-750 DF005 MDS0312008A

gravity sensor

Abstract: gravity sensor IC for charge amplifier ­ Scale factor insensitive to temperature, 10mg resolution ­ Scale factor insensitive to temperature, 10mg resolution ­ Multi-axis sensor reduces cost, simplifies packaging ­ , 10mg resolution 50g FS with 10mg resolution Data Analysis -Acceleration -Velocity -Displacement , Trade-off between Noise and BW · Trade-off between Noise and BW 10mg Noise RMS = Noise * SQR(BW*1.5) (for , 4.88mV/bit 10mg 0.6 10 Bits 4.88mV/bit 10mg 0.6 12 Bits 1.22mV/bit 2.4mg 0.14 12 Bits 1.22mV/bit
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Original
gravity sensor gravity sensor IC Tilt Sensors degree 3 axis acceleration sensor vibration sensors airbag crash sensor Piezo Vibration Sensor

RLT1070-10MG

Abstract: v 1.0 26.04.2013 RLT1070-10MG Description RLT1070-10MG is a Laser Diode emitting at 1070 nm with rated output power of 10 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built in monitor PD. Maximum Ratings Parameter Values Symbol Optical Output Power Min. Max. PO Unit mW Operating Temperature TCASE -10 +60 °C Storage Temperature TSTG -40 +80 °C Soldering Temperature TSOLD °C
Roithner LaserTechnik
Original
RLT1070-10MG

SCA610-C23H1G

Abstract: SCA610-C28H1G ±10mg (6 limit) and the temperature dependence is typically ±0.1mg/°C. The room temperature variation , ±10mg in ±1g). 3. Sensitivity Error The sensitivity error is ±1,5% (-25 . +85°C), resulting in
VTI Technologies
Original
SCA610-C23H1G SCA610-C28H1G SCA61TFAHH1G SCA61T-FA1H1G inclinometer operation SCA61T SCA61T- SCA100TS SCA103T-S FIN-01621
Abstract: : Exposure Limit: ACGIH TLV: ACGIH STEL: OSHA PEL: 5mg/m3 (fume); 10mg/m3 (total dust) 10mg/m3 (fume , have established TWA exposure limits of 5mg/m3 fo zinc oxide fumes. ACGIH also has a STEL of 10mg/m3 NTE Electronics
Original
NTE303
Abstract: 10MG270K 10MG300J 10MG330K 10MG360J 10MG390K 10MG430J 10MG470K 10MG510J 10MG560K 10MG620J 10MG680K 10MG750J 10MG820K 10MG910J 10MG101K 10MG111J 10MG121K 10MG131J 10MG151K 10MG161J 10MG181K 10MG201J 10MG221K 10MG241J 10MG271K 10MG301J 10MG331K 10MG361J 10MG391K 10MG431J 10MG471K 10MG511J 10MG561K 10MG621J 10MG681K 10MG751J 10MG821K 10MG911J 10MG102K 10MG112J 10MG122K 10MG132J 10MG152K 10MG162J 10MG182K 10MG202J 10MG222K , 10MG363J 10MG393K 10MG433J 10MG473K 10MG513J 10MG563K 10MG623J 10MG683K 10MG753J 10MG823K 10MG913J 10MG104K Gowanda Electronics
Original
10MG100K 10MG110J 10MG120K 10MG130J 10MG150K 10MG160J

TDA 7000 pin diagram

Abstract: TDA 7000 pin tank circuit. 0 10MG 100/DIV. f3 f1 fpar FREQUENCY 1G a. 1-Pin Crystal , IF and demodulator. ­600 10MG f3 fpar FREQUENCY 1G b. 1-Pin Crystal Oscillator , Re VOSC (dB) 6/DIV 80 60 Rp = 250 0 10MG 1G FREQUENCY a. 1-Pin Crystal Oscillator (R = , 250, 60) 100/DIV. 1mV OSC 600 250 60 0 ­600 10MG 1G FREQUENCY b. 1 , 50 12pF 950 80pF 200pF 2.2nF ­40 0 50 100 150 400MG 10MG/DIV
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Original
TDA7000 TDA 7000 pin diagram TDA 7000 pin TDA7000 application notes TDA7000 application note cheap fm radio ic AN193 TYPE/78R 88405B SL01197 SL01194

CA-YD-101T

Abstract: SINOCERA CA-YD-101T ICP 20±5 () 10 28.9 mV/ms-2 100 ms-2 5 × 1 320 Hz ±4VDC +2+10 mA 3VP 100 0V -20+80 100 g 0.2mg / 1g/ T 10mg/0.3Hz × 550 g LY12 M5 PZT-5 1 2 M12×1 RVVP 3m M5 dB 15 20 10 5 10 0 -5 -10 0 -15 -40 -20 20 40 80 100 1 2 5 10 20 50 200 500 2K 5K 20K Add Web http://www.china-yec.com Tel
SINOCERA
Original

NFM61R

Abstract: NFM61RH 1. ®(NFM/NFA ) NFM61R/61RH 0.40.6 1.6 2.6 3.0 2. ® ® NFM61R/61RH 200m H60A 3.0 in mm 2.0 4.8 8.8 NFM61R/61RH 0.40.6 0.6 1.2 3.2 3.6 1.5 4.8 8.8 in mm NFM61R/61RH 1.0mg 0.6 3.6 1.6 2.6 1.5 3.8 4.8 9.0 1.5 4.8 9.0 in mm in mm 1.2 3.2 3. ® 300 Temperature [] 250 200 150 100 50 0 Max. Temp. 250 60s Min. 5s Max. 300 Temperature [] 250 200 150 100 50 0 Temperature [] 260
muRata
Original
NFM61R NFM61RH 61RH H60AH63A

RLT904-10MG

Abstract: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43 44 office@roithner-laser.com www.roithner-laser.com RLT904-10MG TECHNICAL DATA Infrared Laserdiode Structure: index guided, single transverse mode Lasing wavelength: typ. 904 nm Output power: 10 mW Package: 5.6 mm, TO-18 NOTE! LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode
Roithner LaserTechnik
Original
RLT904-10MG

49mhz remote control transmitter circuit

Abstract: TDA7000 OSC R V e OSC (dB) 600 0 10MG f1 f3 fpar FREQUENCY ­600 10MG 1G f1 , narrowband FM reception AN193 Re VOSC (dB) 6/DIV 80 60 Rp = 250 0 10MG 1G FREQUENCY , 10MG 1G FREQUENCY b. 1-Pin Crystal Oscillator (R = , 250, 60) SR01184 Figure 11. 2. To , 400MG 10MG/DIV. 150 FREQUENCY SR01192 Figure 20. APPENDIX An LC Oscillator at 1.7MHz
Philips Semiconductors
Original
49mhz remote control transmitter circuit TDA7000 equivalent 49mhz remote control receiver circuit TDA7000 NOTE 49MHz FM transmitter ic TDA7000 455KH 155MH

D2N12-960

Abstract: d2n05 /10MG 5,08 mm AgNi no3onoHeHHue 100 mOm 15x10' UMKTIOB Axicom Tyco Electronics Kofl: D2N05-167 D2N12
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OCR Scan
D2N12-960 D2N24-2880 d2n05 axicom d2n axicom D2N12 axicom D2N05-167 VAC/1500 I391I9S

SMD 1005 inductor

Abstract: HP4291A Dimensions in mm Weight: 1.0mg RECOMMENDED REFLOW SOLDERING CONDITIONS Eutectic Solder 10s max. 230 , Taping Weight: 1.0mg 0.5 RECOMMENDED PC BOARD PATTERN 0.5 0.4 0.5 Dimensions in mm
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Original
MLK0603 SMD 1005 inductor HP4291A ALL SMD CODe TYPE7561 MLK0603L10NJ MLK1005S1N0S MLK1005S1N2S MLK1005S1N5S MLK1005S1N8S MLK1005S2N2S
Abstract: 180mm Reel 1.0 ±0.05mm T size 1.0mg 0510 (0204) Specifications Capacitance 1.0µF  muRata
Original
LLL153C80G105ME21 LLL153C80G105ME21D LLL153C80G105ME21J

3TNC

Abstract: Hz-6000 SINOCERA CA-YD-156BNC ICP XYZ 3-TNC 20±5 10% 50 mV/ms-2 100 ms-2 5 11500 Hz 6,000 Hz +12+28VDC +2+10 mA 5VP 2 mg 100 7±1 V -20+120 100 g 1mg/ 0.6g/T 10mg/0.3Hz 800 g 3-5.2 PZT-5 BNC 1 2 BNC dB 15 20 10 5 10 0 -5 0 -10 -15 -40 -20 - 20 40 80 120 1 2 5 10 20 50 2K 200 500 5K Add Web http://www.china-yec.com Tel:05147348717 Fax
SINOCERA
Original
3TNC Hz-6000

RLT1060-10MG

Abstract: laserdiode ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060-10MG TECHNICAL DATA Infrared Laser Diode NOTE! Structure: double heterostructure Lasing wavelength: 1063 nm typ. Optical power: 10 mW Package: 5.6 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc
Roithner LaserTechnik
Original
RLT1060-10MG laserdiode

RLT855-10MG

Abstract: Laser Diode Technical Data RLT855-10MG ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) Features DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 5 â'¢ Index Guided MQW Structure â'¢ Wavelength : 855 nm (Typ.) Operation Temperature (oC) Top -10 to +50 â'¢ Optical Power : 10 mW CW Storage Temperature (oC) Tstg -40 to +85 â'¢ Threshold Current : 30 mA ( Typ. ) LD Reverse Voltage (V) VLDR 2 â'¢ Package Style : TO-18 (5.6 mmØ) PD
Roithner LaserTechnik
Original
RLT855-10MG AT1212 AT3112 ATU61938489

CD4148-0603

Abstract: ER4148-0805 ER4148-0805 Small Signal Switching Diodes PRIMARY CHARACTERISTICS IF VRRM VF TJ max 150mA 75V 1.0V 175°C 0805 Dimensions in inches and (millimeters) Features This diode is also available in other case styles Including the 0805 case with the type designation CD4148-0603 Silicon Epiaxial Planar Diode Fast switching diode. Mechanical Data Case : 0805 Weight : approx. 10mg Marking : Cathode arrow Absolute Maximum Ratings & Thermal Characteristics Parameter Reverse voltage Forward
ERIS Technology
Original
CD4148

2SK192

Abstract: 2SK192 fet . Dimethyl Phthalate: Dissolved in Ethanol:Hexane (5:95) 1.0mg/mL 1.0mg/mL 1.0mg/mL 2 8866 3
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OCR Scan
2SK160A 2SK169 2SK171 2SK176 2SK185 2SK191 2SK192 2SK192 fet 2sk180 2sk163 nec 2SK161 2SK162 2SK163 2SK165 2SK168
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