NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BL GALAXY ELECTRICAL 10A05 10A05 - - - 10A10 VOLTAGE RANGE: 50 - 1000 V CURRENT: 10.0 A PLASTIC SILICON RECTIFIER FEATURES R-6 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents , 10A8 10A10 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 , AVERAGE FORWARD RECTIFIED CURRENT FIG.1 - FORWARD DERATING CURVE 10A05 10A05 - - - 10A10 AMBIENT ... | Original |
2 pages, |
10A8 10A6 10A4 10A2 10A10 10A1 10A05 10a10 bl 10A05 abstract |
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| Abstract: BL GALAXY ELECTRICAL 10A05- 10A05- 10A10 VOLTAGE RANGE: 50 - 1000 V CURRENT: 10.0 A PLASTIC SILICON RECTIFIER FEATURES R-6 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC R-6,molded plastic , 10A8 10A10 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 ... | Original |
2 pages, |
diode 10A10 10A8 10A6 10A4 10A2 10A10 10A1 10A05 10a10 bl 10A05--- 10A05--- abstract |
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| Abstract: March 2000 2975 Stender Way, Santa Clara, California 95054 Telephone: (800) 345-7015 · TWX: 910-338-2070 · FAX: (408) 492-8674 Printed in U.S.A. © 2000 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitr ... | Original |
60 pages, |
RC5000 RC4650 RC4640 RC3041 R3000 GHW Connectors datasheet abstract |
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| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
1489 pages, |
HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633F2 HD64F2633F25 HD64F2633R 2633f-ztat HD64F2633RF28 datasheet abstract |
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| Abstract: REJ09B0234-0500 REJ09B0234-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2633 H8S/2633 Group, H8S/2633 H8S/2633 F-ZTAT, H8S/2633R H8S/2633R F-ZTAT, H8S/2695 H8S/2695 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series H8S/2633 H8S/2633 H8S/2632 H8S/2632 H8S/2631 H8S/2631 H8S/2633R H8S/2633R H8S/2695 H8S/2695 Rev. 5.00 Revision Date: Mar 28, 2005 HD6432633 HD6432633 HD64F HD64F ... | Original |
1487 pages, |
HD64F2633RF28 HD64F2633R HD64F2633 HD6432633 HD6432632 HD6432631 REJ09B0234-0500 H8S/2633 H8S/2633R H8S/2695 REJ09B0234-0500 abstract |
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| Abstract: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and ... | Original |
1453 pages, |
mcr 100-6 842 HD64F2633R HD64F2633F25 HD64F2633 HD6432633 HD6432632 HD6432631 0 986 AH0 453 HD64F2633RF28 datasheet abstract |
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| Abstract: H8S/2633 H8S/2633 Series H8S/2633 H8S/2633 HD6432633 HD6432633 H8S/2632 H8S/2632 HD6432632 HD6432632 H8S/2631 H8S/2631 HD6432631 HD6432631 H8S/2633 H8S/2633 F-ZTATTM HD64F2633 HD64F2633 H8S/2633R H8S/2633R F-ZTATTM HD64F2633R HD64F2633R H8S/2695 H8S/2695 HD6432695 HD6432695 Hardware Manual ADE-602-165C ADE-602-165C Rev. 4.0 8/29/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for p ... | Original |
1451 pages, |
HD64F2633TE25 HD64F2633R HD64F2633 HD6432633 HD6432632 HD6432631 H8S/2633 H8S/2632 H8S/2633 abstract |
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| Abstract: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and ... | Original |
1453 pages, |
mitsubishi 200 pages HD64F2633RF28 HD64F2633R HD64F2633 HD6432633 HD6432632 HD6432631 nuclear radiation detector datasheet abstract |
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| Abstract: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.). Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document ... | Original |
1452 pages, |
HD64F2633R HD64F2633 HD6432633 HD6432632 HD6432631 433 transmitter, pcb layout datasheet abstract |
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| Abstract: REJ09B0234-0500 REJ09B0234-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2633 H8S/2633 Group, H8S/2633 H8S/2633 F-ZTAT, H8S/2633R H8S/2633R F-ZTAT, H8S/2695 H8S/2695 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series H8S/2633 H8S/2633 H8S/2632 H8S/2632 H8S/2631 H8S/2631 H8S/2633R H8S/2633R H8S/2695 H8S/2695 Rev. 5.00 Revision Date: Mar 28, 2005 HD6432633 HD6432633 HD64F HD64F ... | Original |
1487 pages, |
2631 0140 c-mac crystals XTAL FE3A H8S/2633 HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633F25 HD64F2633R HD64F2633TE25 IC 566 function generator mar 552 HD64F2633RF28 REJ09B0234-0500 H8S/2633 REJ09B0234-0500 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| : Ipp = 10A , 10/1000 m s. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max RESISTANCE Note 1 : Pulse waveform 10/1000 m s 100 50 % I PP t t r p 0 t L3100B/L3100B1 2/8 Type V GN @ I GN L3100B1 L3100B1 L3100B1 L3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITHOUT GATE L3100B/L3100B1 3/8 REFERENCE OUT = 480 V RMS , R 2 = 240 W . L3100B/L3100B1 4/8 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 . L3100B/L3100B1 5/8 Table below gives the tolerance of the limited current I T for each standardized www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3025-v2.htm |
STMicroelectronics | 14/06/1999 | 8.28 Kb | HTM | 3025-v2.htm |
| .U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 m s. 3) The D.U.T will come back to /1000 m s 100 50 % I PP t t r p 0 t L3100B/L3100B1 2/8 Type V GN @ I GN = 200 mA I 3100B1 3100B1 3100B1 3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITHOUT GATE L3100B/L3100B1 3 = 240 W . L3100B/L3100B1 4/8 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 I (A) TSM versus junction temperature. L3100B/L3100B1 5/8 Table below gives the tolerance of the limited www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3025.htm |
STMicroelectronics | 20/10/2000 | 10.79 Kb | HTM | 3025.htm |
| Current : Ipp = 10A , 10/1000 m s. 3) The D.U.T will come back to the OFF-State within a duration 50 % I PP t t r p 0 t L3100B/L3100B1 2/8 Type V GN @ I GN = 200 m 100 L3100B1 L3100B1 L3100B1 L3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITHOUT GATE L3100B/L3100B1 = 240 W . L3100B/L3100B1 4/8 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 : Relative variation of holding current versus junction temperature. L3100B/L3100B1 5/8 Table below www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3025-v3.htm |
STMicroelectronics | 25/05/2000 | 10.14 Kb | HTM | 3025-v3.htm |
| : Ipp = 10A , 10/1000 m s. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max RESISTANCE Note 1 : Pulse waveform 10/1000 m s 100 50 % I PP t t r p 0 t L3100B/L3100B1 2/8 Type V GN @ I GN L3100B1 L3100B1 L3100B1 L3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITHOUT GATE L3100B/L3100B1 3/8 REFERENCE OUT = 480 V RMS , R 2 = 240 W . L3100B/L3100B1 4/8 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 . L3100B/L3100B1 5/8 Table below gives the tolerance of the limited current I T for each standardized www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3025-v1.htm |
STMicroelectronics | 02/04/1999 | 8.32 Kb | HTM | 3025-v1.htm |
| 3STATUS +10A10E 3C_RES_3 003K00002C00C6 003K00002C00C6 003K00002C00C6 003K00002C00C6 3C_TALK 00CK000105009E 00CK000105009E 00CK000105009E 00CK000105009E 3CallTlt 129L11C12901B9 129L11C12901B9 129L11C12901B9 129L11C12901B9 3CellChk 01BL01B020016E 3 1361440153 3SndStop 14AL14614A0173 14AL14614A0173 14AL14614A0173 14AL14614A0173 3SndStrt 12BL12B0091 3Srq 043L0430F501B9 043L0430F501B9 043L0430F501B9 043L0430F501B9 3Srq_Bit 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 3 www.datasheetarchive.com/download/30080354-392862ZC/00591.zip (ADB.SYM) |
Microchip | 05/03/1998 | 62.99 Kb | ZIP | 00591.zip |
| 3STATUS +10A10E 3C_RES_3 003K00002C00C6 003K00002C00C6 003K00002C00C6 003K00002C00C6 3C_TALK 00CK000105009E 00CK000105009E 00CK000105009E 00CK000105009E 3CallTlt 129L11C12901B9 129L11C12901B9 129L11C12901B9 129L11C12901B9 3CellChk 01BL01B020016E 3 1361440153 3SndStop 14AL14614A0173 14AL14614A0173 14AL14614A0173 14AL14614A0173 3SndStrt 12BL12B0091 3Srq 043L0430F501B9 043L0430F501B9 043L0430F501B9 043L0430F501B9 3Srq_Bit 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 3 www.datasheetarchive.com/files/microchip/ech_src/an591/adb.sym |
Microchip | 23/04/1994 | 6.46 Kb | SYM | adb.sym |
| 3STATUS +10A10E 3C_RES_3 003K00002C00C6 003K00002C00C6 003K00002C00C6 003K00002C00C6 3C_TALK 00CK000105009E 00CK000105009E 00CK000105009E 00CK000105009E 3CallTlt 129L11C12901B9 129L11C12901B9 129L11C12901B9 129L11C12901B9 3CellChk 01BL01B020016E 3 1361440153 3SndStop 14AL14614A0173 14AL14614A0173 14AL14614A0173 14AL14614A0173 3SndStrt 12BL12B0091 3Srq 043L0430F501B9 043L0430F501B9 043L0430F501B9 043L0430F501B9 3Srq_Bit 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 50EB0000A7011C 3 www.datasheetarchive.com/download/90671992-390860ZC/00591.zip (ADB.SYM) |
Microchip | 23/04/1998 | 62.99 Kb | ZIP | 00591.zip |
| 001 01 10 10013 10014 10015 10024 1006 1012 1014 1015 1020 1035 1050 10A 10AE 10HPX 10HPX 10HPX 10HPX 10L120 10L120 10L120 10L120 10L122 10L122 10L122 10L122 10L124 10L124 10L124 10L124 10L125 10L125 10L125 10L125 10L130 10L130 10L130 10L130 11 1133SO 1133SO 1133SO 1133SO 1134SO 1134SO 1134SO 1134SO 1135SO 1135SO 1135SO 1135SO 1137SO 1137SO 1137SO 1137SO 1138SO 1138SO 1138SO 1138SO 1158SO 1158SO 1158SO 1158SO 1159SO 1159SO 1159SO 1159SO 11604 1160SO 1160SO 1160SO 1160SO 1161SO 1161SO 1161SO 1161SO 1162SO 1162SO 1162SO 1162SO 1163SO 1163SO 1163SO 1163SO 1164SO 1164SO 1164SO 1164SO 1165SO 1165SO 1165SO 1165SO 1171SO 1171SO 1171SO 1171SO 1174SO 1174SO 1174SO 1174SO 1175SO 1175SO 1175SO 1175SO 1176SO 1176SO 1176SO 1176SO 1188SO 1188SO 1188SO 1188SO 1191SO 1191SO 1191SO 1191SO 12 1203 1215 1222 1235 123D 124C 1250 125AA 125AA 125AA 125AA 1289 13 13A 13AE 13AP 13HP 13HPX 13HPX 13HPX 13HPX 13HPXS 13HPXS 13HPXS 13HPXS -AW SB-B1 SB-B3 SB-B8 SB-B9 SB-BL SB-BP SB-BS SB-BU SB-D1 SB-DC SB-DF SB-DG SB-DK SB-DL SB www.datasheetarchive.com/files/duracell/equiv.txt |
Duracell | 10/03/1996 | 7.47 Kb | TXT | equiv.txt |
| 0fff, "fmrx%c\t%12-15r, fpsid"}, {0x0ef10a10, 0x0fff0fff, "fmrx%c\t%12-15r, fpscr"}, {0x0 , %0y"}, {0x0ee00a10, 0x0fff0fff, "fmxr%c\tfpsid, %12-15r"}, {0x0ee10a10, 0x0fff0fff, "fmxr an extension of the special processing there for Thumb BL. BL and BLX(1) involve 2 successive string is put in this table, and the string interpreter takes to mean it has a pair of BL , ""}, /* special processing required in disassembler */ {0xF800, 0xF800, "second half of BL instruction %0-15x www.datasheetarchive.com/download/42652172-393173ZC/mplabalc30v2_05.tgz |
Microchip | 09/11/2006 | 11568.47 Kb | TGZ | mplabalc30v2_05.tgz |
| pin change interrupt. [PC2:PCINT10:A10] A10,External memory interface :OCR1BH:OCR1BL:ICR1H:ICR1L] [ ] io or OCR1BL, the TEMP register is simultaneously written to OCR1AH or OCR1BH. Consequently, the high writes the low byte, OCR1AL or OCR1BL, the TEMP register is simultaneously written to OCR1AH or OCR1BH writes the low byte, OCR1AL or OCR1BL, the TEMP register is simultaneously written to OCR1AH or OCR1BH www.datasheetarchive.com/download/14941222-47647ZC/avr911.zip (ATmega162.xml) |
Atmel | 27/07/2004 | 1876.83 Kb | ZIP | avr911.zip |