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QSTS015A0S10R0841-17HZ GE Critical Power QSTS015A0S10R0 BARRACUDA Series; DC-DC Converter Power Module, 45Vdc –65Vdc input; 10Vdc output; 15A Output Current visit GE Critical Power
AXA016A0X3-SRZ GE Critical Power 12V Austin SuperLynxTM 16A: Non-Isolated DC-DC Power Module, 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 16A Output Current visit GE Critical Power
NXA025A0X-SZ GE Critical Power NaosTM NXA025: SMT Non-Isolated DC-DC Power Module, 10Vdc – 14Vdc input; 0.8Vdc to 5.5Vdc output; 25A Output Current visit GE Critical Power
NXA025A0X-LZ GE Critical Power NaosTM NXA025: SMT Non-Isolated DC-DC Power Module, 10Vdc – 14Vdc input; 0.8Vdc to 5.5Vdc output; 25A Output Current visit GE Critical Power
NXA025A0X-HSZ GE Critical Power NaosTM NXA025: SMT Non-Isolated DC-DC Power Module, 10Vdc – 14Vdc input; 0.8Vdc to 5.5Vdc output; 25A Output Current visit GE Critical Power
NXA025A0X-SPZ GE Critical Power NaosTM NXA025: SMT Non-Isolated DC-DC Power Module, 10Vdc – 14Vdc input; 0.8Vdc to 5.5Vdc output; 25A Output Current visit GE Critical Power

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10VDC

Catalog Datasheet MFG & Type PDF Document Tags

14MQ

Abstract: circuit, the 4302 is scaled so that when 9 = 0, Eâ'ž = OVDC, and when 0 = 9 0 , E o= 10VDC. TRANSFER , when Ee » + 10VDC. (4) Repeat steps (2) and (3) as necessary. FIGURE 7. Sine Application , ±0.6% ±0.07% Typical accuracies expressed as a % of output full scale (+10VDC) at25°C , In multiplier applications, the 4302 provides high accuracy. The 4302 accepts inputs up to +10VDC , NOTES: {1) Set R, so that with E, = E3 * +10VDC, E0 = +10VDC. (2) Set R2 so that with E, = E3 =
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OCR Scan
14MQ S10-95M 54M132 1-80O-548-6132 15VDC IN4154 OPA111AM

ic 4521

Abstract: 2N2907 =50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=150mAdc, VCE=10Vdc)* 35 50 75 100 30 75 100 100 100 50 , (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f=100MHz) SWITCHING
Micro Commercial Components
Original
ic 4521 2N2907 TRANSISTOR J 2N2907A equivalent 2N2907A 2n2907 TRANSISTOR PNP IC 406 100MH

2N2907

Abstract: ic 4521 =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* Min Max Units , =15mAdc) (IC=500mAdc, IB=50mAdc) Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC
Micro Commercial Components
Original

2N3637UB

Abstract: 2N3634UB ) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 , = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634 , 75 pF Small-Signal Short-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634
Microsemi
Original
2N3634L 2N3634UB 2N3635 2N3635L 2N3636L 2N3637 2N3637UB MIL-PRF-19500/357 2N3635UB
Abstract: . Unit (1) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 hFE 2N3635, 2N3637 25 45 50 50 30 55 90 100 100 60 , Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short-Circuit Input Impedance Microsemi
Original
2N3636UB 2N3637L T4-LDS-0156

2N3636 transistor

Abstract: 2N3635 ) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 25 45 50 50 30 150 hFE IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3635, 2N3637 Collector-Emitter Saturation Voltage IC = , , VCE = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
Microsemi
Original
2N3636 transistor 50krads ic radiation 2n3634 transistor 2N3634-2N3635 2N363 T4-LDS-0065

2N2907A

Abstract: Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* 35 50 75 , Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f
Shanghai Lunsure Electronic
Original

2N2907 application notes

Abstract: 2n2907 =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* Min Max Units , =50mAdc) Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f
Micro Commercial Components
Original
2N2907 application notes

4302 multifunction converter

Abstract: scale. In this circuit, the 4302 is scaled so that when 0 = 0, Eq = 0VDC, and when 0 = 90, Eq = 10VDC. , ±0.07% Typical accuracies expressed as a % of output full scale (+10VDC) at 25°C. International Airport , +10VDC and provides a typical accuracy o f ±0.25% o f full scale. TRANSFER FUNCTION ACCURACY Total , +10VDC, Ec = +10VDC. (2) Set R2 so that with E, - E, - +0.10VDC, E0 - +10VDC. (3) Set Rs s o that with , Conversion Error (typical) m = 0 .2 0 .5 V D C < E ,5 10VDC 0.1 VDC < E ,< 0.5VDC m=5 1VDC < E, £ 10VDC
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OCR Scan
4302 multifunction converter INA105AM

MMBT2222

Abstract: MMBT2222LT1 / MMBT2222ALT1 Characteristics at TA=25 oC Symbol Min. Max. Unit at VCE=10Vdc, IC=0.1mAdc hFE 35 - - at VCE=10Vdc, IC=1mAdc hFE 50 - - hFE 75 - - hFE , ICBO - 0.01 µAdc DC Current Gain at VCE=10Vdc, IC=10mAdc o at VCE=10Vdc, IC=10mAdc,TA=-55 C at VCE=10Vdc, IC=150mAdc at VCE=1Vdc, IC=150mAdc MMBT2222A only 1) 1) at VCE=10Vdc , IC=1mAdc, VCE=10Vdc, f=1kHz MMBT2222 hie 2 8 kâ"¦ at IC=10mAdc, VCE=10Vdc, f
Bytes
Original
Abstract: . Max. Unit (1) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 hFE 2N3635, 2N3637 Collector-Emitter Saturation Voltage IC = , 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 |hfe| 1.5 2.0 8.0 8.5 2N3634, 2N3636 Microsemi
Original

10VDC

Abstract: MMBT2222 Characteristics at TA=25 oC Symbol Min. Max. Unit at VCE=10Vdc, IC=0.1mAdc hFE 35 - - at VCE=10Vdc, IC=1mAdc hFE 50 - - hFE 75 - - hFE 35 - - hFE , 0.01 µAdc DC Current Gain at VCE=10Vdc, IC=10mAdc o at VCE=10Vdc, IC=10mAdc,TA=-55 C at VCE=10Vdc, IC=150mAdc at VCE=1Vdc, IC=150mAdc MMBT2222A only 1) 1) at VCE=10Vdc, IC , 30 pF MMBT2222A Cibo - 25 pF at IC=1mAdc, VCE=10Vdc, f=1kHz MMBT2222 hie
Semtech Electronics
Original

PNP 2907a

Abstract: =0) DC Current Gain (IC=0.1mAdc, VCE=10Vdc) (IC=1mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=50mAdc, VCE=10Vdc) (IC=00mAdc, VCE=10Vdc) (IC=150mAdc, VCE=1Vdc) Collector-Emitter Saturation Voltage (IC=150mAdc, IB , =50mAdc) Current Gain-Bandwidth Product (VCE=20Vdc, IC=20mAdc, f=100MHz) Output Capacitance (VCB=10Vdc, f , =-0.1mAdc, VCE=-10Vdc) (IC=-1mAdc, VCE=-10Vdc) (IC=-10mAdc, VCE=-10Vdc) (IC=-150mAdc, VCE=-10Vdc) (IC=-500mAdc, VCE=-10Vdc) Collector-Emitter Saturation Voltage (IC=-150mAdc, IB=-15mAdc) (IC=-500mAdc, IB
Micro Commercial Components
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PNP 2907a MMDT2227

MMST2222A

Abstract: 10VDC CHARACTERISTICS (1) 35 - (I C = 1.0mAdc, V CE = 10Vdc) 50 - (I C = 10mAdc, V CE = 10Vdc) 75 - 100 300 40 - (I C = 10mAdc, V CE = 10Vdc,TA=-55 C) 50 - (I C = 150mAdc, V CE = 1.0Vdc) 35 - Collector-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) - 0.3 - 1.0 0.6 1.2 - 2.0 DC Current Gain (I C = 100µA, V CE = 10Vdc) (I C = 150mAdc, V CE = 10Vdc) hFE (I C = 500mAdc, V CE = 10Vdc) O (I C = 500mAdc, I B = 50mAdc
Rectron Semiconductor
Original
MMST2222A MIL-STD-202E
Abstract: 50 nAdc DC Current Gain (I C = 100µAdc, V CE = 1.0Vdc) 40 - (I C = 1.0mAdc, V CE = 1.0Vdc) 70 - 100 300 (I C = 50mAdc, V CE = 1.0Vdc) 60 - (I C = 100mAdc, V CE = 1.0Vdc) 30 - Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc ON CHARACTERISTICS (2) (I C = 10mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc , = 100MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) hie 1.0 10 kâ"¦ Voltage -
Original
MMST3904

4302 burr brown

Abstract: IN4154 4302 is scaled so that when 9 = 0, Eq = 0VDC, and when 0 = 90, Eq = 10VDC. TRANSFER FUNCTION E^ = 10 , expressed as a % of output full scaie (+10VDC) at 25-C. international Airport Industrial Park â'¢ Hailing , 4302 provides high accuracy. The 4302 accepts inputs up to +10VDC and provides a typical accuracy of  , O^W-O +15VDC 10kii NOTES: (1) Set R, so that with E, = E, . +10VDC, Ec = +10VDC. (2) Set Rs so that with E, - E, - +0.10VDC, E0 - +10VDC. (3) Set R3 so that with E, - +0.01 VDC and with E, - +0.1 OVDC
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OCR Scan
4302 burr brown burr-brown Model 4302 BURR-BROWN 4302 pt 4302 -x Burr Brown 4302 4302 multiplier PDS-326E 17313L5
Abstract: Current (VCE=60Vdc,IB=0) Emitter Cutoff Current (VEB=3Vdc,IC=0) DC Current Gain (IC=0.1mAdc, VCE=10Vdc) (IC=1mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=50mAdc, VCE=10Vdc) (IC=00mAdc, VCE=10Vdc) (IC , (VCE=20Vdc, IC=20mAdc, f=100MHz) Output Capacitance (VCB=10Vdc, f=1.0MHz, IE=0) Noise Figure (VCE , =0) Collector Cutoff Current (VEB=-30Vdc,IC=0) DC Current Gain (IC=-0.1mAdc, VCE=-10Vdc) (IC=-1mAdc, VCE=-10Vdc) (IC=-10mAdc, VCE=-10Vdc) (IC=-150mAdc, VCE=-10Vdc) (IC=-500mAdc, VCE=-10Vdc) Collector-Emitter Micro Commercial Components
Original
Abstract: Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=500mAdc, VCE=10Vdc)* 35 50 75 , (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f=100MHz) SWITCHING -
Original
Abstract: Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage , Figure (IC=100µAdc, VCE=10Vdc, RS=1.0kâ"¦ f=1.0kHz) 300 MHz 8.0 pF 25 pF 4.0 dB -
Original
PN2222A

MARKING K27

Abstract: npn 2907A =0.1mAdc, VCE=10Vdc) (IC=1mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=50mAdc, VCE=10Vdc) (IC=00mAdc, VCE=10Vdc , (VCE=20Vdc, IC=20mAdc, f=100MHz) Output Capacitance (VCB=10Vdc, f=1.0MHz, IE=0) Noise Figure (VCE , =0) Collector Cutoff Current (VEB=-30Vdc,IC=0) DC Current Gain (IC=-0.1mAdc, VCE=-10Vdc) (IC=-1mAdc, VCE=-10Vdc) (IC=-10mAdc, VCE=-10Vdc) (IC=-150mAdc, VCE=-10Vdc) (IC=-500mAdc, VCE=-10Vdc) Collector-Emitter
Micro Commercial Components
Original
MARKING K27 npn 2907A
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