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| Part Number | Manufacturer | Description | ||||||
| 1. |  10V-100 |
N/A | The Diode Data Book with Package Outlines 1993 | 86.4 Kb | 2 Pg. |
| « Previous 1 Next » |
| 1. |  29.92 Kb • 1 Pages |
Abstract: ... Collector Dark Current Iceo Vce=10V 100 nA. Light Current Ic Vce=5V 0.2 1.5 mA. Collector-E. Saturation Volt. Vce-Sat Ic=0.5mA 0.2 0.4 V. Switching Speeds Tr Vcc=10V,1c=1mA 3.2 μs. Tf Ic=5mA 4.8. RL ... Labels: 10V-100 |
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| 2. |  119.96 Kb • 2 Pages |
Abstract: ... ICBO VCB=10V 100 nA. IEBO VEB=10V 100 nA. BVCBO IC=10μ A 40 V. BVCEO IC=10mA 35 V. BVEBO IE=10μ A 25 V. VCE(SAT) IC=12mA, IB=400μA 0.15 V. VCE(SAT) IC=24mA, IB=1.0mA 0.20 V. VBE(SAT) IC=12mA, IB=400μA 0.85 ... Labels: 10V-100 |
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| 3. |  219.92 Kb • 2 Pages |
Abstract: ... ICBO VCB=10V 100 nA. IEBO VEB=10V 100 nA. BVCBO IC=10μ A 40 V. BVCEO IC=10mA 35 V. BVEBO IE=10μ A 25 V. VCE(SAT) IC=12mA, IB=400μA 0.15 V. VCE(SAT) IC=24mA, IB=1.0mA 0.20 V. VBE(SAT) IC=12mA, IB=400μA 0.85 ... Labels: 10V-100 |
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| 4. |  64.85 Kb • 2 Pages |
Abstract: ... IEBO VEB=10V 100 nA. BVCBO IC=100mA 60 V. BVCES IC=100mA 60 V. VCE(SAT) IC=100mA, IB=0.1mA 1.5 V. VBE(ON) VCE=5.0V, IC=100mA 2.0 V. hFE VCE=5.0V, IC=10mA 10,000. hFE VCE=5.0V, IC=100mA 10,000. fT VCE ... Labels: 10V-100 |
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| 5. |  61.34 Kb • 1 Pages |
Abstract: ... Collector dark current Iceo Vce=10V 100 nA Collector-emitter breakdown voltage BVceo Ic=1mA Ee=0 mW/c m2 30 V Emitter-collector breakdown voltage BVceo Ic=1mA Ee=0 mW/c m2 30 V Collector ... Labels: 10V-100 |
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| 6. |  96.9 Kb • 2 Pages |
Abstract: ... 10V 100 m F. BY206. BY206. BY206. 10V 100 m F. 1K. BY206. 16V 68 m F. 680. 200. 2T. 2T. 5T. 5T. 7T. 6T. 6T. 7T. 0V +5V. +12V. 0V. - ... Labels: 10V-100 |
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| 7. |  21.06 Kb • 2 Pages |
Abstract: ... Emitter–Base Current IEBO VEB = 10V – – 100 nA. Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA 30 – – V. Collector–Base Breakdown Voltage V(BR)CBO IC = 10μA 40 – – V. Emitter–Base Breakdown ... Labels: 10V-100 |
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| 8. |  164.26 Kb • 2 Pages |
Abstract: ... at 10V, 100 kHz typ. 350 pF. Spectral responsivity at 633nm at 850nm typ. 0,4 A/W. typ. 0,62 A/W. Interelectrode resistance at E= 0lx typ. 12kΩ. Rise time at 10V, 50Ω , 865nm typ. 4 μs. Noise limited resolution ... Labels: 10V-100 |
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| 9. |  111.17 Kb • 2 Pages |
Abstract: ... IEBO VEB=10V 100 nA. BVCES IC=100μA 40 60 V. VCE(SAT) IC=100mA, IB=0.1mA 0.75 1.0 V. VBE(ON) VCE=5.0V, IC=100mA 2.0 V. hFE VCE=5.0V, IC=10mA 30,000 70,000. hFE VCE=5.0V, IC=100mA 40,000 75,000. hFE ... Labels: 10V-100 |
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| 10. |  263.57 Kb • 4 Pages |
Abstract: ... Dark Current ID V CE=10V — — 100 nA. Output. C-E Saturation Voltage VCE(sat) IC=0.25mA IF=10mA — — 0.4 V. Light Current IL. VCE=5V IF=10mA. 0.5 — 5 mA. Rise Time Tr — 15 — μsec. Speed. Fall Time Tf. IFP=20mA VCE ... Labels: 10V-100 |
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