NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 10MA40 | N/A | The Diode Data Book with Package Outlines 1993 |
2 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10V-200 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10M50 10EF2 10M60 10M80 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10ma80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10M60 10EF2 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10MA80 1S783 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10M80 10ELS1 10ELS2 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10EF2 10ELS4 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M15 10M50 10M10 10M60 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10EF2 10ELS1 10ELS2 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10M10 10ELS4 10M15 10MA120 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10m60 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10EF2 10M15 10EF2 abstract |
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| Abstract: 120 lOmA 300 mmr/i-f RM-iojfs 706 10MA40 600 400 40 104c 80) 1. 4 120 lOmA 400 umvi-f ... | OCR Scan |
2 pages, |
10M15 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B 10EF2 10EF2 abstract |
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| Abstract: 2.2V5.5V Typical 0.5ASTOP 20A32kHzCPU10 10mA4.096MHz () 4bit ADPCM28bit HQ-ADPCM 4bit ADPCM2 ... | Original |
2 pages, |
ML610Q347 ML610Q346 ML610Q340 ML610346 ML610340 ADPCM20 ML610340 abstract |
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| Abstract: 32 kHz 32 kHzRC4.096MHz 4.096MHz 2.2V5.5V 0.5ASTOP 20A32kHzCPU10 10mA4.096MHz () 4bit ... | Original |
2 pages, |
ML610Q347 ML610Q346 ML610Q340 ML610346 ML610340 ADPCM20 ML610346/Q346 ML610347/Q347 ML610340/Q340 ML610340 abstract |
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| Abstract: No.0023(Ver.001) Technical Information Paper June.2008 XC6401 XC6401 EN1EN2"H" CPU(VOUT)VOUT1VOUT2 AC 2chVR DC/DC(XC6365/66 XC6365/66) (VOUT2)3.3VIOUT=300mA 2chVR XC6401 XC6401 1ch(VOUT1)2.8V 1chVR300mA EN1EN21 EN1EN21 (ISS)2(50uA) 1(CL) 1 EN1EN21 EN1EN21"H" SD VOUT1(3.3V)VOUT2(2.8V) 2 EN1EN2"H""L" (ISS)TYP EN1EN2"L""L" VIN=4.0V CIN=1F()CL=1F( 250 VIN=4.0V CIN=1F()CL=1F( 5 200 3.5 4 3.3 150 3.2 100 3.1 : VOUT (V) :VOUT (V) : I ... | Original |
1 pages, |
XC6401 XC6401 abstract |
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| Abstract: KSC1507 KSC1507 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT • High Collector-Emitter Voltage: VCeo=300V • Current-Gain-Bandwidth Product: fT=40MHz(Min) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage VcBO 300 V Collector-Emitter Voltage VcEO 300 V Emitter-Base Voltage Vebo 7 V Collector Current lc 200 mA Collector Dissipation (Tc=25°C) Pc 15 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~ 150 °C TO-220 1.Base 2.Collector 3.Emi ... | OCR Scan |
2 pages, |
KSC1507 KSC1507 abstract |
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| Abstract: BGY15 BGY15 SILICON PLANAR NPN MEDIUM-CURRENT TRANSISTOR ARRAY The BGY 15 is an assembly of seven isolated silicon planar epitaxial NPN transistors in a 16-lead dual in-line plastic package, intended for industrial and general purpose applications. ABSOLUTE MAXIMUM RATINGS VcBO Collector-base voltage (lg= 0) 40 V VcEO Collector-emitter voltage (lB= 0) 40 V Vebo Emitter-base voltage (lc= 0) 6 V P.ot Total power dissipation at Tamb < 25°C 0.8 W Tstg, Tj Storage arid junction temperature -55 to ... | OCR Scan |
2 pages, |
BGY 55 BGY15 BGY15 abstract |
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| Abstract: PTB32001X PTB32001X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32001X PTB32001X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B .060 x 45° CHAMFER C E · Diffused Emitter Ballasting Resistor · Hermetic Flange Package · Gold Metelization G L F H J I K M MAXIMUM RATINGS NP MAXIMUM DIM 4.2 W @ TC = 75 °C TJ -65 °C to +200 °C .245 / 6.22 D PDISS ... | Original |
1 pages, |
PTB32001X PTB32001X abstract |
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| Abstract: HXTR5104 HXTR5104 LINEAR POWER TRANSISTOR DESCRIPTION: The ASI HXTR5104 HXTR5104 is a Common Base Device Designed for high poutput power and gain at VHF, UHF, and microwave frequency applications. PACKAGE STYLE 100 4L FEATURES INCLUDE: · High Gain · Hermetic package · High power output MAXIMUM RATINGS IC 250 mA VCBO 45 V VCEO 27 V PDISS 4.0 W @ TC = 25 °C TJ -65 °C to+200 °C TSTG -65 °C to+200 °C JC 44 °C/W CHARACTERISTICS O TC = 25 C SYMBOL ... | Original |
1 pages, |
HXTR5104 HXTR-5104 HXTR5104 abstract |
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| Abstract: MPSA43 MPSA43 MPSA43 MPSA43 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE 0.625 PCM: W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 200 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-b ... | Original |
1 pages, |
MPSA43 MPSA43 abstract |
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| Abstract: TPM401 TPM401 NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401 TPM401 is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: · High Gain · Gold Metallization · Emitter Ballasting MAXIMUM RATINGS IC 400 mA VCBO 40 V PDISS 8.75 W @ TC = 25 OC TJ -55 OC to+200 OC T STG -55 OC to+200 OC JC 20 OC/W CHARACTERISTICS 1 = Collector 2 = Base 3 & 4 = Emitter TC = 25 OC SY ... | Original |
1 pages, |
TPM401 TPM401 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA43 MPSA43 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE 0.625 PCM: W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 200 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test condi ... | Original |
1 pages, |
MPSA43 MPSA43 abstract |
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| Abstract: L ALLEGRO MICROSYSTEMS INC 13 D 0S0433 0S0433Ã- DG037 DG037Ã"1 G â- ALGR PROCESS BQB T-91-01 T-91-01 Process BQB Power Schottky Diode Process BQB is a silicon Schottky-barrier diode with a typical breakdown-voltage rating of 45V. Designed for high-power applications, it can sustain a forward current of up to 1 A. ABSOLUTE MAXIMUM RATINGS Peak lF Surge (Pulse Width=1s).1.0A Operating Junction Temperature, Tj.+150°C Storage Temperature Range, Ts.-55°C to + 150°C BQB 0.035 SQ. 0.040 ... | OCR Scan |
1 pages, |
0S0433 DG037 T-91-01 0S0433 abstract |
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| Abstract: TPM401S TPM401S NPN RF POWER TRANSISTOR DESCRIPTION: The TPM401S TPM401S is a Common Emitter Device Designed for Class A and AB Amplifier Applications up to 1.0 GHz. PACKAGE STYLE 280 4L STUD FEATURES INCLUDE: · High Gain · Gold Metallization · Emitter Ballasting MAXIMUM RATINGS IC 400 mA VCBO 40 V PDISS 8.75 W @ TC = 25 OC TJ -55 OC to+200 OC T STG -55 OC to+200 OC JC 20 OC/W CHARACTERISTICS 1 = Collector 2 & 4 = Emitter 3 = Base TC = 25 OC ... | Original |
1 pages, |
TPM401S TPM401S abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| *version 8.0 1515126540 @index symloc d 0 886 b symloc dz 886 953 b symloc dsch 1839 953 b symloc dualccdsch 2792 1337 symloc dvc 4129 869 b symloc 1N4001G 1N4001G 1N4001G 1N4001G:d 4998 410 symloc 1N4002G 1N4002G 1N4002G 1N4002G:d 5408 412 symloc 1N4003G 1N4003G 1N4003G 1N4003G:d 5820 412 symloc 1N4004G 1N4004G 1N4004G 1N4004G:d 6232 412 symloc 1N4005G 1N4005G 1N4005G 1N4005G:d 6644 412 symloc 1N4006G 1N4006G 1N4006G 1N4006G:d 7056 412 symloc 1N4007G 1N4007G 1N4007G 1N4007G:d 7468 508 symloc 1N5817G 1N5817G 1N5817G 1N5817G:dsch 7976 407 symloc 1N5818G 1N5818G 1N5818G 1N5818G:dsch 8383 407 symloc 1N5819G 1N5819G 1N5819G 1N5819G:dsch 8790 406 symloc 1N5820G 1N5820G 1N5820G 1N5820G:dsch 9196 408 symloc 1N5821G 1N5821G 1N5821G 1N5821G:dsch 9604 406 symloc 1N5822G 1N5822G 1N5822G 1N5822G:dsch 10010 408 sy www.datasheetarchive.com/download/28647131-605842ZC/ncp4302spicemodel.rev1.zip (ON Semiconductor diodes.slb) |
On Semiconductor | 30/03/2009 | 5244.93 Kb | ZIP | ncp4302spicemodel.rev1.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 10MA40 | Nihon Inter Electronics | Silicon Rectifier | |
| NTE Electronics Part | Industry Part |