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10Krad

Catalog Datasheet MFG & Type PDF Document Tags

RH117

Abstract: rh117 krad 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si , A A IMIN NOTES 20KRAD(Si) MIN MAX 100 CONDITIONS 10KRAD(Si) MIN MAX SYMBOL
Linear Technology
Original
RH117 rh117 krad

rh117 krad

Abstract: 619W £ IOUT £ IMAX, VOUT £ 5V 10mA £ IOUT £ IMAX, VOUT 5V 2 2 10KRAD(Si) MIN MAX 20KRAD(Si , PARAMETER IADJ Adjust Pin Current Change NOTES 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX
Linear Technology
Original
619W
Abstract: £ IMAX, VOUT £ 5V 10mA £ IOUT £ IMAX, VOUT #22; 5V 2 2 10KRAD(Si) MIN MAX 20KRAD(Si) MIN , PARAMETER IADJ Adjust Pin Current Change NOTES 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX Linear Technology
Original
Abstract: : ClCCTRICRl CHÌÌRÌÌCTÉRISTICS SYMBOL V REF (Postirradiation) (Note 4) 10KRAD(Si) 20KRAD(Si) MIN MAX , (Postirradiation) (Note 5) 10KRAD(Si) 20KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX UNITS PARAMETER -
OCR Scan
MIL-STD-883
Abstract: (Postirradiation) (Note 4) < 40V, 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX , : â'¬lâ'¬CTRICfll CHARACTERISTICS (Postirradiation) (Note 5) 10KRAD(Si) MIN MAX 2QKRAD(Si) MIN MAX -
OCR Scan
7073C

rh1573

Abstract: 20KRAD = 5V 1.8 1 0.8 2 4 7 0.8 1 2.8 VIN = 7V 2.4 10KRAD(Si) NOTES MIN , CHARACTERISTICS PARAMETER CONDITIONS 10KRAD(Si) NOTES MIN MAX (Postirradiation) 20KRAD(Si) MIN MAX
Linear Technology
Original
RH1573K rh1573 RH1573

RH137

Abstract: ­1.225 ­1.275 ­1.225 ­1.275 ­1.225 ­1.275 ­1.225 ­1.275 ­1.22 ­1.28 V 10KRAD(Si) NOTES MIN MAX , CONDITIONS (Postirradiation) (Note 4) 10KRAD(Si) NOTES MIN MAX 20KRAD(Si) MIN MAX 50KRAD(Si
Linear Technology
Original
RH137

cd4xxx

Abstract: CD40107BKMSR -0548RH-Q 5962D9569401VEC 16-Lead SBDIP 10krad Single, 16-Channel, OV Protection, RON Match HS1B-0546RH-Q 5962D9569301VXC 28-Lead SBDIP 10krad Single, 16-Channel, with OV Prot, Power-off Hi-Z HS1 , -0549RH-Q 5962D9569402VEC 16-Lead SBDIP 10krad Differential, 8-Channel, OV Protection, RON Match HS1B-0547RH-Q 5962D9569302VXC 28-Lead SBDIP 10krad Dual, DPST, TTL HS1-302RH-8 5962R9581201QCC 14-Lead, SBDIP , -Lead SBDIP 10krad Single, 12MHz, 60V/ms HS9-2510RH-Q 5962D9568601VXC 14-Lead Flatpack
Intersil
Original
5962F9954701VXC cd4xxx CD40107BKMSR 5962r9568101vcc 5962R9581301VXC 5962R9662501VEC CD4046BD 5962R9675502VXC ISL74422ARHQF 5962F0152101QXC HS9-565BRH-T 5962R9675502TXC ISL74422ARHVF

RH1011

Abstract: LM111 CHARACTERISTICS SYMBOL PARAMETER ns CONDITIONS pF (Postirradiation) (Note 10) 10Krad(Si) 20Krad , : ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES
Linear Technology
Original
RH1011 LM111 LT1011

SI-1125HD equivalent

Abstract: mosfet 257A RADIATION (TOTAL DOSE) ASSURANCE LEVEL 10kRAD (Si) lOOkRAD (Si) 10OOkRAD (Si) DIE DESIGNATION All
-
OCR Scan
SI-1125HD equivalent mosfet 257A 300KRAD 1000KRAD

4060 PIN DIAGRAM

Abstract: radiation solid state recorder Total dose > 10krad(Si) Synchronous design allows precise memory accesses through the use of two
-
Original
4060 PIN DIAGRAM radiation solid state recorder UT8SDSQ128M8
Abstract: = 5V, OV, VC M = 0.1V, V0 = 1.4V, Ta = 25°C unless otherwise noted. 10KRAD(Si) MIN MAX 120 2 20 3.5 , otherwise noted. 10KRAD(Si) MIN MAX 350 2 20 13.5 -15.0 VCM = 13.5V,-15V VS = 5V, OV to ±18V V0 = 10V, RL = -
OCR Scan
RH1078M 107BM 107SM E-100

Dose

Abstract: transistor BC 247 (Si) 200KRAD(Si) PARAMETER CONDITIONS 10KRAD(Si) MIN MAX MIN MAX MIN MAX , 1.5V (VIN ­ VOUT) 15V 0.2 0.21 RH1085 TABLE 1A: ELECTRICAL CHARACTERISTICS 10KRAD(Si
Linear Technology
Original
Dose transistor BC 247

LM111

Abstract: LT1011 (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si) 100Krad(Si) 200Krad(Si , PARAMETER CONDITIONS (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX
Linear Technology
Original
Abstract: pF (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si , : ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS (Postirradiation) (Note 10) 10Krad(Si Linear Technology
Original

LM111

Abstract: LT1011 (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si) 100Krad(Si) 200Krad(Si , PARAMETER CONDITIONS (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX
Linear Technology
Original

RH137

Abstract: Voltage 10KRAD(Si) NOTES MIN MAX VIN ­ VOUT 5V, IOUT = 10mA % °C/W °C/W 15 3 , 5V RH137 TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 4) 10KRAD(Si) NOTES
Linear Technology
Original

RH137

Abstract: LT0402 °C/W 15 3 (Postirradiation) (Note 4) 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 50KRAD , 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Postirradiation) (Note 4) 10KRAD(Si) MIN
Linear Technology
Original
LT0402
Abstract: : ELECTRICAL CHARACTERISTICS (Post-lrradiation)(Note d > 100Krad(SI) 200Krad(SI) 50Krad(SI) 10Krad , ) 100Krad(SI) 200Krad(SI) 10Krad(Si) 20Krad(SI) MAX MAX MIN MAX MIN NOTES MIN MAX MIN MAX MIN -
OCR Scan

package tsop1

Abstract: UT8SDMQ256M8 > 10krad(Si) - SEL Immune >40-60 MeV-cm2/mg (contact factory) Package options: - 68-lead ceramic bottom
Aeroflex UTMC
Original
UT8SDMQ256M8 package tsop1 BA 1 borne cke2

lm140-15

Abstract: LMD18200-2D/883 -0548RH-Q 5962D9569401VEC 16-Lead SBDIP 10krad Single, 16-Channel, OV Protection, RON Match HS1B-0546RH-Q 5962D9569301VXC 28-Lead SBDIP 10krad Single, 16-Channel, with OV Prot, Power-off Hi-Z HS1 , -0549RH-Q 5962D9569402VEC 16-Lead SBDIP 10krad Differential, 8-Channel, OV Protection, RON Match HS1B-0547RH-Q 5962D9569302VXC 28-Lead SBDIP 10krad Dual, DPST, TTL HS1-302RH-8 5962R9581201QCC 14-Lead, SBDIP , -Lead SBDIP 10krad Single, 12MHz, 60V/ms HS9-2510RH-Q 5962D9568601VXC 14-Lead Flatpack
National Semiconductor
Original
lm140-15 LMD18200-2D/883 frequency to voltage converter with LM555 timer lm723 mil 43 LMX2305WG-QML LM108AW

JM54AC125BCA

Abstract: MIL-M-1835 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si , A A IMIN NOTES 20KRAD(Si) MIN MAX 100 CONDITIONS 10KRAD(Si) MIN MAX SYMBOL
National Semiconductor
Original
54AC125 JM54AC125BCA JM54AC125BCA-RH 5962-9325301BDA MIL-M-1835 Z125 Diode JM54AC125 MJ54AC125-X-RH JM54AC125B2A JM54AC125B2A-RH

SMD SI

Abstract: 54ACT573 ­1.225 ­1.275 ­1.225 ­1.275 ­1.225 ­1.275 ­1.225 ­1.275 ­1.22 ­1.28 V 10KRAD(Si) NOTES MIN MAX , CONDITIONS (Postirradiation) (Note 4) 10KRAD(Si) NOTES MIN MAX 20KRAD(Si) MIN MAX 50KRAD(Si
National Semiconductor
Original
ACT573 ACT373 54ACT573 SMD SI MV54ACT573-X M0003617

ASTM-F-1892

Abstract: 38510R75001 qut I 5V 2 / T 'U n C A E TECHNOLOGY RH137 TRßl in : lCTRICRl CHRRRCTRISTICS 10KRAD(Si
National Semiconductor
Original
F100K ASTM-F-1892 38510R75001 ASTM-F1892 54AC14 MDS 54AC00 seu 54ACTQ574 00E-08 00E-05 75E-06 62E-06 51E-06

54ACT573LMQB

Abstract: ACT573 £ IOUT £ IMAX, VOUT £ 5V 10mA £ IOUT £ IMAX, VOUT 5V 2 2 10KRAD(Si) MIN MAX 20KRAD(Si , PARAMETER IADJ Adjust Pin Current Change NOTES 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX
National Semiconductor
Original
54ACT573DMQB 54ACT573DMQB-RH 54ACT573FMQB 54ACT573FMQB-RH 54ACT573LMQB 54ACT573LMQB-RH MN54ACT573-X
Showing first 20 results.