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Part : ST-645,10ADC Supplier : Hoyt Electrical Instrument Works Manufacturer : Newark element14 Stock : 4 Best Price : $11.00 Price Each : $11.00
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Part : KLY-D3A-10A-DC-IV-R Supplier : Prime Technology Manufacturer : Allied Electronics & Automation Stock : - Best Price : $359.2300 Price Each : $359.2300
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10ADC

Catalog Datasheet MFG & Type PDF Document Tags

FTA302AR103S-S

Abstract: FTA302EB220S 500Vdc 2000Vdc 10Adc 10Adc 15Adc 25Adc 3 FTT FTP 116 10Adc 5.6 FTB 250Vdc 500Vdc 15Adc M3 100Vdc 10Adc M5 100Vdc 10Adc M3 100Vdc 10Adc M4 100Vdc 10Adc M3 100Vdc 5Adc M4 100Vdc 10Adc MARUWA CENERAL CATALOG EMI [FTA , ~­10%) 10Adc +50%, ­20% 250Vdc ­25~+85°C D (+20~­30%) E (+20~­55%) 750Vdc F (+30 , 250Vdc ­55~+125°C R (+15~­15%) 250Vdc 10Adc ±20% +50%, ­20% B (+10~­10%) D (+20
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FTA302AR102S-S FTA302AR472S-S FTA302AR103S-S FTA302EB100M-S FTA302EB220S-S FTA302EB470S-S FTA302EB220S ftb302ar102 FTB302AR102S FTA302EF102 2000V FTA302AC060KAAG-S

2N6249T1

Abstract: 2n6250 CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10Adc, VCE = 3Vdc 2N6249, T1 2N6250, T1 2N6251, T1 10 8 6 , hFE Collector-Emitter Saturation Voltage IC = 10Adc, IB = 1.0Adc IC = 10Adc, IB = 1.25Adc IC = 10Adc, IB = 1.67Adc Base-Emitter Saturation Voltage IC = 10Adc, IB = 1.0Adc IC = 10Adc, IB = 1.25Adc IC = 10Adc, IB = 1.67Adc 2N6249, T1 2N6250, T1 2N6251, T1 VCE(sat) 1.5 Vdc 2N6249, T1 , Short-Circuit Forward Current Transfer Ratio IC = 1.0Adc, VCE = 10Vdc, f = 1MHz Output Capacitance VCB = 10Vdc
Microsemi
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2N6249T1 2n6250T1 MIL-PRF-19500/510 2N6250T1 2N6251T1 T4-LDS-0197 AL203

TR0011A

Abstract: 400mAdc Current Gain* (VCE = 5VDC) IC = 2 A IC = 10 A TC = 25oC TC = 100oC IC = 5ADC IC = 10ADC Collector-Emitter Saturation Voltage* IC = 10ADC, IB = 400mADC, TC = 25oC IC = 20ADC, IB = 1ADC, TC = 25oC IC = 10ADC, IB = 400mADC, TC = 100oC VCE(SAT) TC = 25oC TC = 100oC VBE (SAT) - 2.5 2.5 VDC Diode Forward Voltage (IF = 10ADC) VF - 5.0 VDC Small Signal Current Gain (IC , Saturation Voltage* (IC = 10ADC, IB = 400mADC) Delay Time Rise Time Storage Time VCC = 250VDC , IC =
Solid State Devices
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TR0011A 400mAdc Motorolla transistor replacement book SFT10000/3 SFT10000 10VDC 30VDC

100VDC

Abstract: 250VDC 0.1µ 100Vdc 250Vdc 100Vdc 250Vdc 500Vdc 2000Vdc 15Adc 25Adc 3.25 250Vdc 10Adc 5.6 500Vdc 15Adc M3 100Vdc 10Adc M5 100Vdc 10Adc M3 100Vdc 10Adc M4 100Vdc 10Adc M3 100Vdc 5Adc M4 100Vdc 10Adc M3 M4 FTA M5 FTB FTT FTP 102 MARUWA CO.,LTD. 10Adc 10Adc -
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100VDC Maruwa FTB 15ADC

2N5666

Abstract: 2N5664 IE = 10Adc V(BR)EBO 6.0 Vdc OFF CHARACTERTICS Collector-Emitter Cutoff Current VCE = , Ratio IC = 0.5Adc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 5.0Vdc 2N5664, 2N5666 2N5665, 2N5667 40 , 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc All Types IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 1.2 IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc All Types , Symbol Turn-On Time VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc Min. Turn-Off Time VCC = 100Vdc
Microsemi
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2N5666S 2N5666U3 2N5667S 300VDC MIL-PRF-19500/455 T4-LDS-0062

2N3741

Abstract: 2N3740 IC = 1.0Adc, VCE = 1.0Vdc IC = 4.0Adc, VCE = 5.0Vdc hFE 40 30 20 10 3.0 120 Collector-Emitter Saturation Voltage IC = 250mAdc, IB = 25mAdc IC = 1.0Adc, IB = 125mAdc VCE(sat) 0.4 0.6 , . Turn-On Time VCC = 30Vdc; IC = 1.0Adc; IB = 0.1Adc ton 400 µs Turn-Off Time VCC = 30Vdc; IC = 1.0Adc; IB = IB = 0.1Adc toff 1.0 µs SAFE OPERATING AREA DC Tests TC = +25°C, 1
Microsemi
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2N3740 2N3741 MIL-PRF-19500/441 T4-LDS-0021

SFT6436

Abstract: m1tx 100 mA VCEO(sus) 100 120 140 150 hFE 50 30 12 120 - (IC = 10ADC, IB = 1ADC , * (IC = 10ADC, IB = 1ADC) (IC = 25ADC, IB = 2.5ADC) VCE (SAT) - 1.0 1.8 VDC Current , ) (IC = 10ADC) (IC = 25ADC) Base-Emitter Saturation Voltage* Rise Time Storage Time Fall Time SFT6338 SFT6339 SFT6340 SFT6341 (VCC = 80VDC , IC = 10ADC, VB = 6VDC IB1 = IB2 = 1ADC, RL = 8W
Solid State Devices
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2N6338 2N6341 SFT6436 SFT6338M m1tx TR0025A SFT6438 MIL-PRF-19500 SFT6338/3

SFT1016

Abstract: SFT1018 350Vdc) ICBO 10 uAdc Emitter Cutoff Current (VEB = 7Vdc) I EBO 10 uAdc DC Current Gain* (IC = 10Adc. , Saturation Voltage* (IC = 50Adc. IB = 5Adc) (IC = 100Adc. IB = 10Adc) VCE(SAT) 2 4 Vdc Base-Emitter Saturation Voltage* (IC = 100Adc. IB = 10Adc) VBE(SAT) 2.5 Vdc Current Gain Bandwidth Product (IC = lAdc , sec On Time (VCC = 60Vdc, IC = 10Adc, IBI = IB2 = 1.0Adc) i' ton 800 ns Storage Time ts 1500 ns
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OCR Scan
SFT1018 SFT1020 SFT1016 SFT1015 SFT1016/18/20

2N3772

Abstract: 2N3773 transistor Cutoff Current VBE=7.0Vdc, lc=0 5.0 m Ad e hFE DC Current Gain lc=4.0Adc, VCE=4Vdc lc=10Adc, VCE , Respective Manufacturer lc=10Adc, lB=3.3Adc 1.4 fr Current-Gain-Bandwidth Product lc=1.0Adc, VCE
-
OCR Scan
2N3773 2N3772 2N3773 transistor
Abstract: CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =1.0Adc) Base-Emitter Saturation Voltage (IC=5.0Adc,IB =1.0Adc) Full time (VCE=300Vdc, IC=5.0Adc, IB1=1.0Adc, V BE(off)=5.0V dc) Turn-off storage time (VCE=300Vdc, IC=5.0Adc, IB1=1.0Adc, V BE(off)=5.0V dc) 5.0 20 - - Micro Commercial Components
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2N6308

FTA302AR103S-S

Abstract: FTA302AR102S-S ~+125°C R (+15~­15%) ± 20% 10Adc +50%, ­20% 250Vdc B (+10~­10%) ­25~+ 85°C D (+20~­30% , 750Vdc ± 20% +50%, ­20% 10Adc Temp. range R (+15~­15%) ­55~+125°C B , (+15-15%) 10Adc B(+10-10%) SL(+350-1000ppm/ F(+30-80%) No. -25+85 Style 1 -55+125 Style , FTA5B2HD102P-S FTA5D3DF252Z-S 3pF 1,000pF 1,000pF 2,500pF ±1pF 100% -0% 500Vdc 1000Vdc 10Adc , . -55+125 ±20% 10Adc 50% -20% 250Vdc 750Vdc D(+20-30%) E(+20-55%) 100% -0% 4.0 ±0.1
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FTA302ED101S-S FTA302EF102P-S FTA302EF202P-S FTA3S2AB100MAAU-S FTA412HR152S-S FTA402DF103Z-S FTA4D2AR102S-S FTA302EE471S-S FTA352AR102S-S FTA352AR472S-S

2sc898

Abstract: (sat) Forward Current Transfer ratio (IC=1.0Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=6.0Adc, IB =1.0Adc) Base-Emitter Saturation Voltage (IC=6.0Adc,IB=1.0Adc) PIN 1. PIN 2
Micro Commercial Components
Original
2sc898 2SC898

ce50a

Abstract: Forward Current Transfer ratio (IC=1.0Adc, VCE=5.0Vdc) Forward Current Transfer ratio (IC=4.0Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=4.0Adc, IB =0.4Adc) Base-Emitter Saturation Voltage (IC=1.0Adc,V CE=5.0Adc) Transition Frequency (V CE=5.0Vdc, IC=1.0Adc) 40 240 - 20 - - - 2.0 Vdc
Micro Commercial Components
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ce50a 2SD525 2SB595

2N4150

Abstract: 2N4150S Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Base-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150, 2N4150S 2N5237, 2N5237S
Microsemi
Original
2N5238 2N5238S 70VDC 110VDC MIL-PRF-19500/394 T4-LDS-0014

2N2605

Abstract: TO206AB CHARACTERTICS Collector-Base Breakdown Voltage 2N2604 IC = 10Adc 2N2605 Collector-Emitter Breakdown Current IC = 10mAdc Emitter-Base Breakdown Current IE = 10Adc UB Package Collector-Base Cutoff , 180 450 40 100 Unit 160 400 (2) Forward-Current Transfer Ratio IC = 10Adc, VCE = , , IC = 10Adc, Rg = 10k, f = 100Hz VCE = 5.0Vdc, IC = 10Adc, Rg = 10k, f = 1.0kHz VCE = 5.0Vdc, IC = 10Adc, Rg = 10k, f = 10kHz Cobo 6.0 pF F1 F2 F3 5.0 3.0 3.0 dB (2) Pulse Test
Microsemi
Original
2N2605UB TO206AB MIL-PRF-19500/354 2N2604UB T4-LDS-0092

2n5237

Abstract: Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Base-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150, 2N4150S 2N5237, 2N5237S
Microsemi
Original
Abstract: 300V, t = 1sec DC Current Gain* (VCE = 5VDC) IC = 10ADC IC = 15ADC IC = 20ADC Base-Emitter , VDC IC = 10ADC, IB = 2ADC IC = 20ADC, IB = 2ADC Collector-Emitter Saturation Voltage* VBE , 1.0 :s IC = 10ADC, IC = 10ADC, IC = 20ADC, Small Signal Current Gain (IC = 1ADC , VCE = 10VDC, f = 1MHz) Rise Time Storage Time Fall Time FBSOA VCC = 150VDC , IC = 10ADC, IB1 = IB2 = 1.0ADC, tP = 25:sec *Pulse Test: Pulse Width = 300:s, Duty Cycle = 2% Solid State Devices Solid State Devices
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SPT6060/3 TR0017A
Abstract: Forward-Current Transfer Ratio IC = 0.5Adc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 5.0Vdc 2N5664, 2N5666 2N5665 , = 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc All Types 0.4 IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 1.2 IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc , Conditions Symbol Turn-On Time VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc Min. Turn-Off Time VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc T4-LDS-0062 Rev. 1 (081095) 2N5664, 2N5666 2N5665, 2N5667 Microsemi
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Abstract: =3.0Vdc, IC=10Adc) VCE(sat) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =0.01Adc) (IC=10Adc, IB =0.1Adc) VBE(on) Base-Emitter On Voltage (IC=5.0Adc, VCE=3.0Vdc) (IC=10Adc, VCE=3.0Vdc) *Indicates JEDEC , 2N6388 Symbol Parameter Output Capacitance (VCB=10Vdc, f=1.0MHz) Small-Signal Current Gain (IC=1.0Adc, VCE=5.0Vdc, f=1.0MHz) Small-Signal Current Gain (IC=1.0Adc, VCE=5.0Vdc, f=1.0KHz) Min MCC Max Micro Commercial Components
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1N5816

Abstract: SDR620-28 nsec Instantaneous Forward Voltage Drop (IF=10Adc, TA = 25ºC, 300 µsec pulse) 1/ (IF=20Adc, TA = 25ºC, 300 µsec pulse) 1/ Instantaneous Forward Voltage Drop (IF= 10Adc, TA = 100ºC, 300 µsec pulse) 1/ (IF= 10Adc, TA = -55ºC, 300 µsec pulse) 1/ Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec
Solid State Devices
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SDR620-28 SDR622-28 1N5816 SDR621-28 14701F RH0069B
Abstract: 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Rise Time (VCC 80 Vdc, IC = 10Adc Hirschmann Electronics
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2N6250

Abstract: 2N6249 CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (1C = 5.0 Adc, IB = 0.7 Adc) (IC = 10Adc, IB = 1.3 Adc , ) Collector-Emitter Saturation Voltage (IC = 5.0Adc, !B = 0.7Adc) OC = 10Adc, IB = 1.0 Adc) OC = 10 Adc, |B = 1.0
Microsemi
Original
Abstract: 300 pF Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) tr - 0.3 ON Semiconductor
Original
Abstract: ) Collector-Emitter Saturation Voltage (ic = 5.0 Adc, Ib = 0.7 Adc) (lc= 10Adc, lB= 1.3 Adc) (Iq = 10 Adc, Ib= 1.3 Adc , ) Collector-Emitter Saturation Voltage (ic = 5.0 Adc, Ib = 0.7 Adc) (lc= 10Adc, lB= 1.0 Adc) (Iq = 10 Adc, Ib= 1.0 Adc Aeroflex / Metelics
Original
MIL-PRF-19500/371 888-641-SEMI
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