10A-500 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 1 of about 1 for 10A-500 | ||||
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10A-500 | Allen Avionics, Inc. | 8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE | 307.1 Kb, 1 Pages. |  |
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| Fulltext Datasheet Results | 1 - 35 of about 35 for 10A-500 | ||||
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First line: MINITURE RECTIFIER 6-3V INDIRECTLY HETED MRCH, 1954 High Voltge Vcuum Rectifier suitble providing power cthode tubes from source rectifiction fly-bck voltge. CONNECTIONS VLVE DIMENSIONS Abstract: .. RATINGS Maximum 50 c/s Sinusoidal Pulsed Input Input 10—500 kc/s Input* Vh 63 V Ih 009 A Vin rms 5 — — kV PIV — 17 17 kV lout 30 0-5 0-35 mA Ik pk 18 4 80 mA C 0-1 0-01 0-05 |iF Rsource 01 â .. Tags: datasheet abstract.. | 130.05 Kb | 4 Pages | OCR Scan | |
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First line: Series 1-DCL Optically Coupled MOSFET output Ratings from VDC, from Control Relays easily paralleled higher-current applications PRODUCT SELECTION Load Voltage Abstract: .. • Optically Coupled MOSFET output • Ratings from 7A to 40A @ 200 VDC, and from 7A to 10A @ 500 VDC • DC Control • Relays are easily paralleled for higher-current applications. PRODUCT SELECTION Load .. Tags: D1D40L* datasheet abstract.. | 797.31 Kb | 5 Pages | Original | |
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First line: D5D10 D4D12 D1D40 Series 1-DC series SSRs; MOSFET output Ratings from VDC, from Control Relays easily paralleled higher-current applications PRODUCT SELECTION Load Voltage Abstract: .. • D1D to D5D series SSRs; MOSFET output • Ratings from 7A to 40A @ 200 VDC, and from 7A to 10A @ 500 VDC • DC Control • Relays are easily paralleled for higher-current applications. PRODUCT SELECTION .. Tags: D5D10 DC-109 D4D12 D4D07 D2D12 D1D40 D1D20 D1D07 datasheet abstract.. | 915.99 Kb | 5 Pages | Original | |
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First line: Series 1-DCL Optically Coupled MOSFET output Ratings from VDC, from Control Relays easily paralleled higher-current applications PRODUCT SELECTION Load Voltage Abstract: .. • Optically Coupled MOSFET output • Ratings from 7A to 40A @ 200 VDC, and from 7A to 10A @ 500 VDC • DC Control • Relays are easily paralleled for higher-current applications. PRODUCT SELECTION Load .. Tags: datasheet abstract.. | 793.28 Kb | 5 Pages | Original | |
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First line: d2d40 D4D12 Series 1-DC series SSRs; MOSFET output Ratings from VDC, from Control Relays easily paralleled higher-current applications PRODUCT SELECTION Load Voltage Abstract: .. • D1D to D5D series SSRs; MOSFET output • Ratings from 7A to 40A @ 200 VDC, and from 7A to 10A @ 500 VDC • DC Control • Relays are easily paralleled for higher-current applications. PRODUCT SELECTION .. Tags: D4D12 d2d40 datasheet abstract.. | 793.4 Kb | 5 Pages | Original | |
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First line: Abstract: .. 4‐10A 500 ampere at 125 VAC. 0.1‐1A 35 ampere at 250 VAC. 1.5‐3.5A, 5A 100 ampere at 250 VAC. PACKAGING OPTIONS: 224P 224P Series available on Tape and Reel per EIA-296 EIA-296 . For 1500 pieces per reel, add packaging .. Tags: datasheet abstract.. | 117.04 Kb | 1 Pages | Original | |
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First line: D4D12 Series 1-DC series SSRs; MOSFET output Ratings from VDC, from Control Relays easily paralleled higher-current applications Compliant EN60950-1 PRODUCT SELECTION Load Voltage Abstract: .. • D1D to D5D series SSRs; MOSFET output • Ratings from 7A to 40A @ 200 VDC, and from 7A to 10A @ 500 VDC • DC Control • Relays are easily paralleled for higher-current applications • CE Compliant to EN60950 EN60950 .. Tags: D4D12 datasheet abstract.. | 916.22 Kb | 5 Pages | Original | |
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First line: Fast-Acting Fuse 224/225 Series Abstract: .. 4‐10A 500 ampere at 125 VAC. 0.1‐1A 35 ampere at 250 VAC. 1.5‐3.5A 100 ampere at 250 VAC. PACKAGING OPTIONS: 224 Series available on Tape and Reel per EIA-296 EIA-296 . For 1500 pieces per reel, add packaging .. Tags: datasheet abstract.. | 38.43 Kb | 1 Pages | Original | |
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First line: EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH CURRENT GAIN 1000 MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL Complement TIP145/146/147 Characteristic Symbol Rating Unit Collector Base Voltage VcbO TIP140 TIP141 TIP142 Abstract: .. Current Iebo Vbe = 5V, lc = 0 2 mA DC Current Gain hFE VCE = 4V, lc=5A 1000 Vce = 4V, lc= 10A 500 Collector Emitter Saturation Voltage VcE sat lc= 5A, lb= 10mA 10mA 2 V lc= 10A, lb= 40mA 40mA 3 V Base Emitter Saturation .. Tags: datasheet abstract.. | 87.91 Kb | 2 Pages | OCR Scan | |
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First line: TIP140F EPITAXIAL TIP140F/141F/142F DARLINGTON TRANSISTOR HIGH CURRENT GAIN 1000 -4V, MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL Complement TIP145F/146F/147F Characteristic Symbol Rating Unit Collector-Base Voltage :TIP140T VcBO TIP141T TIP142T Abstract: .. Current Iebo VBE = 5V, lc= 0 2 mA DC Current Gain hFE VCE = 4V, lc = 5A 1000 VCE = 4V, lc = 10A 500 Collector Emitter Saturation Voltage VcE sat lc= 5A, Ib = 10mA 10mA 2 V lc= 10A, Ib= 40mA 40mA 3 V Base Emitter Saturation .. Tags: TIP140F datasheet abstract.. | 89.74 Kb | 2 Pages | OCR Scan | |
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First line: RECTIFIER ASSEMBLIES Doubler Center Tap, Amp, Standard Fast Recovery, 681, SERIES Current Ratings: Aluminum Heat Sink Case, Electrically Insulated Only Fused-in-Glass Diodes Used Controlled Avalanche Characteristics PIV: bUUV Abstract: .. @ 10A 10 200 Fast 689-1 Recovery 689-2 689-3 689-4 689-5 689-6 100 200 300 400 500 600 1.2V @ 10A 500 10 200 *Measured in a reverse recovery circuit from 1A forward to 1A reverse current recovery to 0 .. Tags: datasheet abstract.. | 85.5 Kb | 2 Pages | OCR Scan | |
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First line: TIP142T TIPI 40T/141 T/142T EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH CURRENT GAIN 1000 MONOLITHIC CONSTRUCTION BASE-EMITTER SHUNT RESISTORS INDUSTRIAL plement TIP145T/146T/147T Characteristic Symbol Rating Unit Collector-Base Voltage TIP140T VcBO TIP141T TIP142T Abstract: .. Iebo VBE = 5V, lc = 0 2 mA DC Current Gain hFE VCE = 4V, lc = 5A 1000 mA VCE =4V, lc = 10A 500 2 Collector Emitter Saturation Voltage VcE sat lc= 5A, Ib = 10mA 10mA 3 V lc= 10A, lB= 40mA 40mA 3.5 V Base Emitter Saturation .. Tags: TIP142T datasheet abstract.. | 85.35 Kb | 2 Pages | OCR Scan | |
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First line: RECTIFIER ASSEMBLIES SERIES Doubler Center Tap, Amp, Standard Fast Recovery, Current Ratings: Aluminum Heat Sink Case, Electrically Insulated Only Fused-in-Glass Diodes Used Controlled Avalanche Characteristics PIV: 600V Surge Ratings: 150A Abstract: .. @ 10A 10 200 Fast 689-1 Recovery 689-2 689-3 689-4 689-5 689-6 100 200 300 400 500 600 1.2V @ 10A 500 10 200 âTM Measured in a reverse recovery circuit from 1A forward to 1A reverse current recovery .. Tags: datasheet abstract.. | 74.52 Kb | 2 Pages | OCR Scan | |
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First line: Semiconductor Corp. Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors 2n6576 2n6577 2n6578 silicon power darlington transistor jedec to-3 case Abstract: .. VCE=3.0V, lc=400mA 400mA 200 hfe VCE=3.0V, lc=4.0A 2000 20000 hfe Vce=3.0V, lC=10A 500 5000 hfe Vce=4.0V, IQ=15A 100 ELECTRICAL CHARACTERISTICS CONTINUED SYMBOL TEST CONDITIONS VF lEC=15A lhhel .. Tags: datasheet abstract.. | 109.18 Kb | 2 Pages | OCR Scan | |
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First line: 8365700 SOLIO POWER CORP SOLID PODER CORP HIGH VOLTAGE TRANSISTORS 00108 OOQOlOfi TYPE vceo Veto Vcex Vebo Iebo (SAT) Watts Abstract: .. 25 700* 2.5 30 90 1.0 5 5 5 .8 1.0 1.5 4* I2N5157 I2N5157 1ÔÛ 3.5 400 10Ô 500 .25 7ÖÖ* .5 30 90 1.0 5 5 5 .8 1.0 1.5 âTM Vcex @ 25 C *fr typical 2N3902 2N3902 3.5r -f JAN and JANTX 3.0 2.5 2.0 1.5 1.0 0.5 O 80 60 tÃœ 40 .. Tags: datasheet abstract.. | 104.55 Kb | 2 Pages | OCR Scan | |
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First line: Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Manufacturers World Class Discrete Semiconductors TIP140T TIP141T TIP142T TIP145T TIPI TIP147T SILICON POWER DARLINGTON TRANSISTORS JEDEC T0-220 CASE CENTRAL SEMICONDUCTOR TIP140T, TIP145T series types complementary silicon power Abstract: .. 3.0 IC=10A, IB=40mA 40mA 3.5 VCE=4.0V, IC=10A 3.0 VCE=4.0v, Ic=5.0A 1000 VCE=4.0v, IC=10A 500 VCC=30V, IC=5.0 A, IB=20mA 20mA , IB1=IB2 0.7 TYP VCC=30V, IC=5.0 A, IB=20mA 20mA , IB1=IB2 5.0 TYP. UNIT rnA rnA rnA .. Tags: datasheet abstract.. | 81.26 Kb | 1 Pages | OCR Scan | |
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First line: tip147 TIP142 TIP147 TIP140 TIP141 TIP142 tentMl TIP145 TIP146 SILICON POWER DARLINGTON Semiconductor Corp. COMPLEMENTARY TRANSISTORS Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers World Class Discrete Semiconductors Abstract: .. .0V, lc = 10A 3.0 3.0 3.0 V hFE Vce = 4.0V, lc = 5.0A 1000 1000 1000 hFE Vce = 4.0V, lc = 10A 500 500 500 ton lc = 10A, IB1 =-lB2 =40mA 40mA , RL = 3.0Q 0.9TYP 0.9TYP 0.9TYP US toff lC = 10A, IB1 =-lB2 = 40mA 40mA , RL = 3.0Q .. Tags: TIP142 TIP147 tip147 datasheet abstract.. | 125.87 Kb | 2 Pages | OCR Scan | |
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First line: SAMSUNG SEMICONDUCTOR -14E I.7UH112 aG077SG EPITAXIAL TIP145F/146F/147F SILICON DARLINGTON TRANSISTOR HIGH CURRENT GAltf* hFE=1000 -4V, MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL Complementary TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Uni Abstract: .. Io--5A 1000 Vce=-4V, lc=-10A -10A 500 Collector Emitter Saturation Voltage VcE sat lc = -5A, lB = - 10mA 10mA -2 V lc=-10A -10A , lB=—40mA 40mA -3 V Base Emitter Saturation Voltage VBE sat là = -10A -10A , Ib= —40mA 40mA .. Tags: datasheet abstract.. | 194.17 Kb | 4 Pages | OCR Scan | |
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First line: EPITAXIAL TIP145/146/ SILICON DARLINGTON TRANSISTOR HIGH CURRENT GAIN 1000 -4V, MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL Complement TIP140/141/142 Characteristic Symbol Rating Unit Abstract: .. Iebo Vbe = -5V, lc = 0 - 2 mA DC Current Gain hFE Vce = - 4V,lc = - 5A 1000 Vce = - 4V, lc = - 10A 500 Collector Emitter Saturation Voltage VcE sat lc = -5A, Ib= - 10mA 10mA - 2 V lc = 10A, lB = 40mA 40mA - 3 V Base Emitter Saturation .. Tags: datasheet abstract.. | 88.28 Kb | 2 Pages | OCR Scan | |
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First line: EPITAXIAL TIPI 45F/146F/147F DARLINGTON TRANSISTOR HIGH CURRENT GAIN 1000 -4V, MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL Complement TIP140F/141F/142F Characteristic Symbol Rating Unit Collector Emitter Voltage vcbO TIP145F TIP146F Abstract: .. iebo VBE= - 5v, lc= 0 - 2 mA DC Current Gain hFE Vce = - 4V, le = - 5A 1000 VCE= - 4V, lc= - 10A 500 Collector Emitter Saturation Voltage VcE sat lc= - 5A, ib = - 10mA 10mA - 2 V lc= - 10A, ib= - 40mA 40mA - 3 V Base Emitter .. Tags: datasheet abstract.. | 87.44 Kb | 2 Pages | OCR Scan | |
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First line: 2SC2340* -186- =>7.5 HF(2~30MHz) &mtSVi fiffl 4ffi HWJ60W (Vcc=12.5V, f=28MHz mmtatix-0^3ixmms -30<JB iSmyjiijfio VCHO(V) tlFE Vcb=5V, lc=10A Veeo(V) Cob(pF) 500, Vcb=12V, Ie=0, f=lMHz PG(dB) 12.20 Pc(W)* IMD(dB) -30.00 f=28MHz, Po=60W c(X) 35.00 f=28MHz. Po=60W Vcc-12. f-28MHz, Abstract: .. 150.00 VCB=5V,le=10A 500. 00 VCB=12V, iE=O, f=lMHz -30.00 f=28MHz 28MHz , Po=60W PEP f=28MHz 28MHz , Po=60W PEP Vcc=12. SV, f=28MHz 28MHz . I idle=50iilA 50iilA . ~iI"J: J;!]-CO ~ 3 C'J.:~~ili. Ii -30dB -30dB Łffo ~<i:1J .. Tags: 2SC2340* datasheet abstract.. | 68.79 Kb | 1 Pages | OCR Scan | |
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First line: XLP-02V CONNECTOR 5.0mm (.197") pitch Abstract: .. 300V 300V 2 10A 500. XLR-02V XLR-02V . 300V 300V 4 9A. 500. 500 500. XLR-04V XLR-04V . XLP-02V XLP-02V . XLP-04V XLP-04V . 6.2 .244 25.4 1.000 12.9 .. Tags: XLr-02V* XLP-08V XLP-02V* SXF-41T-P0.7 SXF-01T-P0.7 "XLR" "connector" datasheet abstract.. | 152.39 Kb | 5 Pages | Original | |
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First line: 1002ds Renesas Transistors/Thyristors/Triacs Status List Topic--CMFPAK-6 Series Power FETs Portable Devices Index Small Signal Transistors Small Signal High Frequency Power High Frequency Power Amplification Overseas Sales Only Power Transistors General Amplification General Switching Power General Abstract: .. FS5AS-10A FS5AS-10A 500 5 — 1.5 700 SPL. FS70UMH-03 FS70UMH-03 30 70 0.014 0.020 4000 ∗ FS70UMJ-03 FS70UMJ-03 30 70 0.022 0.012 2850 ∗ FS100UM-03 FS100UM-03 30 100 — 0.0054 6600 ∗ FS100UMJ-03F FS100UMJ-03F 30 100 0.0057 0.004 7600. FS50UM-06 FS50UM-06 60 50 — 0.022 .. Tags: 1002ds 2SC 8050 2SC 8550 6020v4* 2SC 9012 transistor ZY- transistor XM SOT-89 transistor sd zy- transistor h945 transistor bc 2sk transistor 1am TBB1002 SOT-23 ZF sot 23 zf sd 3420 SB JY sot-23 datasheet abstract.. | 7223.06 Kb | 24 Pages | Original | |
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First line: T0-3P Fully isolated Plastic Package Transistors MOUNTED WITH SILICONE GREASE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximu Rating Electrical Characteristics Unless Otherwise Specified) Type Polarity ^CEO "EBO 'a, ^CE(SAT) (PF) (MHz) 2SA1301F 12.0 30.0 2SA13O2F0 15.0 10.0 25.0 2SB817F 12.0 Abstract: .. 5 34 3.5 NS 10' 500 8 NS 0.5 5 8.0 3.0 95 3.0 0.1 2SD15S4F 2SD15S4F NPN 1500 600 5 34 3.5 NS 10Â 500 8 NS 0.5 5 8.0 3.0 95 3.0 0.1 BU426AF BU426AF NPN 900' 400 10 70 6.0 8 1000 900 60 NS 0.6 5 3.0 4.0 NS 10.0 0.2 BU426F BU426F NPN 800t 800t 375 10 .. Tags: datasheet abstract.. | 102.11 Kb | 1 Pages | OCR Scan | |
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First line: Insulated-Gate Bipolar Transistors GSI510,1GT5E10CS File Number 2326 Current Sensing Transistors Insulated Gate Bipolar Transistors rosioni 0.27 Vceismi typ. @10A Ultra-fast turn-on typical Polysilicon gate voltage controlled turn on/oft High current handling case Current sensing pilot TERMINAL DIAG Abstract: .. Current Sensing IGT'TM Transistors Insulated Gate Bipolar ,'ransistors 10A, 500 V rOSI On = 0.27 Features: Low Veel.." - 2.5 V typo @ 10 A Ultra-fast turn-on - 100 ns typical Polysilicon .. Tags: datasheet abstract.. | 167.55 Kb | 4 Pages | OCR Scan | |
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First line: T0-3P Fully isolated Plastic Package Transistors MOUNTED WITH SILICONE GREASE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximu Rating Electrical Characteristics Unless Otherwise Specified) Type Polarity ^CEO "EBO 'a, ^CE(SAT) (PF) (MHz) 2SA1301F 12.0 30.0 2SA13O2F0 15.0 10.0 25.0 2SB817F 12.0 Abstract: .. 5 34 3.5 NS 10' 500 8 NS 0.5 5 8.0 3.0 95 3.0 0.1 2SD15S4F 2SD15S4F NPN 1500 600 5 34 3.5 NS 10Â 500 8 NS 0.5 5 8.0 3.0 95 3.0 0.1 BU426AF BU426AF NPN 900' 400 10 70 6.0 8 1000 900 60 NS 0.6 5 3.0 4.0 NS 10.0 0.2 BU426F BU426F NPN 800t 800t 375 10 .. Tags: datasheet abstract.. | 102.1 Kb | 1 Pages | OCR Scan | |
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First line: 1002ds Renesas Transistors/Thyristors/Triacs Status List Topic--High Frequency Silicon Bipolar Transistor "2SC5998" Index Small Signal Transistors Small Signal High Frequency Power High Frequency Power Amplification Overseas Sales Only Power Transistors General Amplification General Power Abstract: .. FS5AS-10A FS5AS-10A 500 5 — 1.5 700 SPL. FS70UMH-03 FS70UMH-03 30 70 0.014 0.020 4000 ∗ FS70UMJ-03 FS70UMJ-03 30 70 0.022 0.012 2850 ∗ FS100UM-03 FS100UM-03 30 100 — 0.0054 6600 ∗ FS100UMJ-03F FS100UMJ-03F 30 100 0.0057 0.004 7600. FS50UM-06 FS50UM-06 60 50 — 0.022 .. Tags: 1002ds 1002ds* 2SC 8550 2SK3235 VC 5022 uf 304c transistor sd zy- TRANSISTOR MARKING YB transistor hitachi zy- transistor h945 TRANSISTOR FS10KM transistor 2sk transistor 2sc1417 TO-92MOD TO-220F* 2SC5998 | 1489.45 Kb | 24 Pages | Original | |
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First line: AMER PHILIPS/DISCRETE ^53^31 ODIMTOI LAE4001R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor common-emitter class-A linear power amplifiers GHz. Self-aligned process entirely implanted gold sandwich metallization ensure optimum temperature profile, excellent performance reliability. miniature ce Abstract: .. ,0 / 800 5,75 15,2 1 76 0 4,85 13,7 / 69 0 4,17 12,4 / 62 0 3,67 11,3 / 560 3,31 10A}/ 500 3,02 9,6 / 450 2,46 7,8}/ 31 0 2,05 6,2}/ 180 1,76 4,9 / 30 1,55 3,8 / -11 0 1,37 2,7 / -23 0 1,19 1 .. Tags: datasheet abstract.. | 168.63 Kb | 6 Pages | OCR Scan | |
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First line: f425* Fuji power MOSFET Specification 2SK1 This specifies Fuji power MOSFET Construction Appi Outview N-channel enhanceaent aiode power MOSFET switching Abstract: .. > à > Typical gate charge characteristics VGS=f Qg :ID=10A 500 400 300 200 100 _l I 1 1 I II 1 1 400V 400V 1 1 1 1 1 II II 1 1 1 II 1 II 1 Il 1 II M 1 J M 1 I 1 I 1 1' 1 -†I 250V 250V \ : " \ \ ; imy \ \ 1 1 1 1 1 1 1 1 ! 1 1 l 1 1 1 1 1 1 20 16 .. Tags: f425* datasheet abstract.. | 2554.29 Kb | 10 Pages | OCR Scan | |
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First line: 400V to 48V converter GS70/100T300 Family 70W/100W DC-DC CONVERTERS FAMILY Type GS70T300-3.5 GS100T300-5 GS100T300-12 GS100T300-15 GS100T300-24 GS100T300-48 12,0 15,0 24,0 48,0 FEATURES High input voltage range bus: 400Vdc approved High output power 100W) High efficiency (80% min. GS100T300-5 module Abstract: .. δVo Peak Load Transient Response Vi = 300V 300V δIo = 10A 500 mVp. SVR Supply Voltage Rejection f = 100Hz 100Hz 55 dB. Io Output Current Vi = 200 to 400V 400V . Vo = 3.3V. 0 20 A. IoI Overcurrent Limit Initiation Vi = 300V 300V 21 23 .. Tags: 400V to 48V converter Fuse 300V 2A 400V switching transistor GS100T300-5 GS100T300-12 GS100T300-15 GS100T300-24 GS100T300-48 | 89.32 Kb | 10 Pages | Original | |
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First line: T1P122* T1P122 SAMSUNG SEMICONDUCTOR TIPI 7^4142 0007740 EPITAXIAL SILICON DARLINGTON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement TIPI ABSOLUTE MAXIMUM RATINGS (Ta=25*C) TO-220 Characteristic Symbol Rating Unit Abstract: .. IC=5A 1000 Vce=4V, lc=10A 500 Collector Emitter Saturation Voltage VcE sat lc=5A, lB=10mA 10mA 2 V lc=10A, la=40mA 40mA 3 V Base Emitter Saturation Voltage VBE sat lc=10A, la=40mA 40mA 3.5 V Base Emitter .. Tags: T1P122 T1P122* datasheet abstract.. | 261.16 Kb | 6 Pages | OCR Scan | |
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First line: TLP647 TYPES TIP645, TIP646. TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY WITH TIP640, TIP641, TIP642 Case Temperature 1000 10-A Rated Collector Current Reverse Energy Rating device schematic base: Abstract: .. ic=-5a See Notes 6 and 7 1000 1000 1000 Vce = _4V, lc--10A lc--10A 500 500 500 Vgfi Base-Emitter Voltage vce--4v, lc=-10A -10A ,SeeNotes6and 7 -3 -3 -3 v Collector-Emitter Saturation Voltage lB--10mA lB--10mA . IC - .. Tags: TLP647 datasheet abstract.. | 190.82 Kb | 6 Pages | OCR Scan | |
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First line: tip147 TIP142 (LEAD) transistor tip 35c T1P147 TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED COMPLEMENTARY WITH TIP140, TIP141, TIP142 Case Temperature 10-A Rated Collector Current device schematic BASE MinhFEof 1000 Reverse Energy Rating COLLECTOR Abstract: .. Current hpE Transfer Ratio VCE--4V, lc"-6A 1000 1000 1000 Vce--4V, lc--10A lc--10A 500 500 500 VgE Base-Emitter Voltage Vce*-"V, lc - -10 A,See Notes6 and 7 -3 -3 -3 V Collector-Emitter C6 M, Saturation .. Tags: T1P147 transistor tip 35c TIP142 (LEAD) tip147 datasheet abstract.. | 193.25 Kb | 6 Pages | OCR Scan | |
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First line: YSI 44018 hp5082-2810 unm. Circuitry Single Cell Operation November 1985 Williams Portable, battery powered operation electronic apparatus become increasingly desirable. Medical, remote data acquisition, power monitoring other applications good candidates battery operation. some circumstances, space Abstract: .. Size |AA Mercury and Carbon Zinc Ceils 1mA Load o 10a 500 700 900 1100 1380 1SQ8 I IVI lhUI*P; AN 15-8 Lirm TECHNOLOGY L1nlJ\D - - - - - - - - L7 TECHNO 'OG-~v L..,; IT. Application Note 15 November 1985 .. Tags: hp5082-2810 YSI 44018 datasheet abstract.. | 1505.29 Kb | 8 Pages | OCR Scan | |
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First line: vogt* N2881-A FET TO 220 MOT E DATA SHEET MC33262 datasheet C18 ph zener SEMICONDUCTOR APPLICATION NOTE Order this document AN1682/D AN1682 Using MC33157 Electronic Ballast Controller Abstract: .. This integrated circuit comes in a 16 pin SOIC package and can run 10A/500 V power MOSFET operated up to 250 kHz. A simplified internal circuit, depicted in Figure 2.1, together with the data sheet .. Tags: C18 ph zener N2881-AÂ vogt*Â vogt switching transformer MPSA44 Motorola phone schematic diagram MOSFET TO 220 MOT E DATA SHEET MC33262 MC33157 220 ohm 2W carbon resistor 1N4148 pspice 1n4148 ph 1n4002 diode dta sheet AN1682 D MC33157 | 490.45 Kb | 24 Pages | Original | |
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