10A-1000 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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1 - 1 of about 1 for 10A-1000

Allen Avionics, Inc.

8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE

307.1 Kb, 1 Pages.

Contextual Datasheet Results		1 - 18 of about 18 for 10A-1000
	First line: NTE249 NPN NTE250 PNP Silicon Complementary Transistors Darlington Power Amplifier Description NTE249 Abstract: .. DC Current Gain hFE VCE = 3V, IC = 10A 1000 – – Collector–Emitter Saturation Voltage VCE sat IC = 10A, IB = 40mA – – 2.5 V. IC = 16A, IB = 80mA – – 4.0 V. Base–Emitter Voltage VBE VCE = 3V, IC = 10A – – 3.0 V. Note .. datasheet abstract..	24.41 Kb	2 Pages

	First line: TIP145T / 146T / 147T Epitaxial Silicon Darlington Transistor August TIP145T / 146T / 147T Epitaxial Silicon Darlington Transistor Monolithic Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	560.71 Kb	5 Pages

	First line: TIP145 / 146 / 147 TIP145 / 146 / 147 Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	50.61 Kb	4 Pages

	First line: TIP140 / 141 / 142 TIP140 / 141 / 142 Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = 4V, IC = 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2. 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base-Emitter .. datasheet abstract..	51.16 Kb	4 Pages

	First line: LM5020 100V Current Mode Controller October LM5020 100V Current Mode Controller General Abstract: .. LM5020MM-1 MSOP, 80% Duty Cycle Limit MUB-10A 1000 Units on Tape and Reel. LM5020MMX-1 MSOP, 80% Duty Cycle Limit MUB-10A 3500 Units on Tape and Reel. LM5020SD-1 LLP, 80% Duty Cycle Limit SDC-10A .. datasheet abstract..	221.68 Kb	12 Pages

	First line: TIP145T / 146T / 147T TIP145T / 146T / 147T Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	48.7 Kb	4 Pages

	First line: TIP145T / 146T / 147T TIP145T / 146T / 147T Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	49.71 Kb	4 Pages

	First line: TIP145F / 146F / 147F TIP145F / 146F / 147F Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	59.74 Kb	4 Pages

	First line: TIP140T / 141T / 142T TIP140T / 141T / 142T Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE =4V, IC = 10A 1000 500. mA. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base .. datasheet abstract..	50.3 Kb	4 Pages

	First line: TIP140F / 141F / 142F TIP140F / 141F / 142F Monolithic Construction With Built BaseEmitter Shunt Resistors Complement TIP145F / 146F / 147F High Abstract: .. VCE = 4V, IC = 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2. 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base-Emitter .. datasheet abstract..	60.3 Kb	4 Pages

	First line: TIP145F / 146F / 147F TIP145F / 146F / 147F Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	58.54 Kb	4 Pages

	First line: TIP140T / 141T / 142T TIP140T / 141T / 142T Monolithic Construction With Built BaseEmitter Shunt Resistors High Current Gain Abstract: .. VCE =4V, IC = 10A 1000 500. mA. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base .. datasheet abstract..	50.25 Kb	4 Pages

	First line: TIP140F / 141F / 142F TIP140F / 141F / 142F Monolithic Construction With Built BaseEmitter Shunt Resistors Complement TIP145F / 146F / 147F High Abstract: .. VCE = 4V, IC = 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2. 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base-Emitter .. datasheet abstract..	60.33 Kb	4 Pages

	First line: LM5100A / B / C LM5101A / B / C High Voltage High-Side Low-Side Gate Drivers November LM5100A / B / C LM5101A / B / C High Abstract: .. LM5100A /LM5101A SD LLP 10 SDC 10A 1000 shipped in Tape & Reel. LM5100A/LM5101A SDX LLP 10 SDC 10A 4500 shipped in Tape & Reel. LM5100B/LM5101B MA SOIC 8 M08A 95 units shipped in anti static rails. LM5100B .. datasheet abstract..	804.69 Kb	15 Pages

	First line: TIP145 / TIP146 / TIP147 Epitaxial Silicon Darlington Transistor October TIP145 / TIP146 / TIP147 Epitaxial Silicon Darlington Transistor Monolithic Abstract: .. VCE = - 4V, IC = - 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA. IC = - 10A, IB = - 40mA. - 2. - 3. V V. VBE sat Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V. VBE .. datasheet abstract..	240.7 Kb	5 Pages

	First line: TIP140 / TIP141 / TIP142 Epitaxial Silicon Darlington Transistor October TIP140 / TIP141 / TIP142 Epitaxial Silicon Darlington Transistor Monolithic Abstract: .. VCE = 4V, IC = 10A 1000 500. VCE sat Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA. IC = 10A, IB = 40mA. 2. 3. V V. VBE sat Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V. VBE on Base-Emitter .. datasheet abstract..	241.28 Kb	5 Pages

	First line: FUJI Ceramic Surge Absorbers Z-TRAP series 1000V AC Ta=25°C Features clamping characteristics discharge Abstract: .. ENE182D-10A 1000 1465 183 0.4 2500 1800 1700 1980 2970 25 200. ENE182D-14A 360 0.6 4500 2970 50 400. Device Maximum ratings Characteristics. type Applied voltage 1 Transient Nominal varistor 4 .. datasheet abstract..	86.18 Kb	4 Pages

	First line: Cross Reference V1.0 Apr. Alphanumerical Cross Reference CoolMOSTM / IGBT / EmConTM / CoolSET Power Management Supply Alphanumerical Abstract: .. DSEI12-10A 1000 12 TO-220AC IDP12E120. DSEI12-12A 1200 11 TO-220AC IDP12E120. DSEI20-12A 1200 17 TO-220AC IDP20E120. DSEI36-06AS 600 37 TO-263AB IDB45E60. DSEI6-06AS 600 6 TO-252AA IDD06E60 .. datasheet abstract..	522.72 Kb	51 Pages

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