10A-100 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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10A-100 Datasheet, Circuit, PDF, & Application Note Results

Datasheet Search Results			1 - 7 of about 7 for 10A-100
	10A100	RFE International, Inc.	General Purpose Fastrecovery	283.9 Kb, 1 Pages.	Buy Now!

	10A-100	Allen Avionics, Inc.	8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE	307.1 Kb, 1 Pages.	Buy Now!

	10A-1000	Allen Avionics, Inc.	8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE	307.1 Kb, 1 Pages.	Buy Now!

	10A-100A	IC Sensors, Inc.	TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable	450.65 Kb, 5 Pages.	Buy Now!

	10A-100D	IC Sensors, Inc.	TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable	450.65 Kb, 5 Pages.	Buy Now!

	10A-100G	IC Sensors, Inc.	TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable	450.65 Kb, 5 Pages.	Buy Now!

	10A100V	Yangzhou YangJie Electronic Co., Ltd.	SILICON RECTIFIERS	252.41 Kb, 2 Pages.	Buy Now!

Contextual Datasheet Results		1 - 30 of about 30 for 10A-100
	First line: CHENMKO ENTERPRISE CO.LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE Abstract: .. 120 mΩ VGS=10V, ID=10A 100. 3. 0.85. 1.6 .. datasheet abstract..	179.53 Kb	2 Pages

	First line: NTE2343 NPN NTE2344 PNP Silicon Complementary Transistors Darlington Power Switch Absolute Maximum Abstract: .. VCE = 3V, IC = 10A 100 – – Collector–Emitter Saturation Voltage VCE sat IC = 5A, IB = 20mA, Note 1 – – 2.0 V. IC = 10A, IB = 100mA, Note 1 – – 3.0 V. Base–Emitter Saturation Voltage VBE sat IC = 5A, IB = 20mA .. datasheet abstract..	22.02 Kb	2 Pages

	First line: NTE2553 Silicon Transistor Darlington Motor Driver Switch Features High Current Gain High Abstract: .. VCE = 2V, IC = 10A 100 – – Collector–Emitter Saturation Voltage VCE sat IC = 10A, IB = 100mA – – 2.0 V. Base–Emitter Saturation Voltage VBE sat IC = 10A, IB = 100mA – – 2.3 V. Emitter–Collector Forward .. datasheet abstract..	19.86 Kb	2 Pages

	First line: Terminals Non-Insulated Flag Cat. AB14-6A AB51 AB14-8A AB52 AB14-10A AB53 Pkg. Qty. Abstract: .. AB14-10A 100 22-14 #10 21⁄2 .55 .31 .22 .39. AB53 1000 22-14 #10 21⁄2 .55 .31 .22 .39. C51 1000 12-10 #6 5 .66 .31 .25 .48. C10-8A 50 12-10 #8 5 .66 .31 .25 .48. C52 500 12-10 #8 5 .66 .31 .25 .48. C10-10A 50 12-10 .. datasheet abstract..	56.41 Kb	1 Pages

	First line: CHENMKO ENTERPRISE CO.LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE Abstract: .. 120 mΩ VGS=10V, ID=10A 100. 3. 0.85 .. datasheet abstract..	179.13 Kb	2 Pages

	First line: Series High Current Min. CURRENTRATING Based frominitial inductance ADC. MARKING Part Number Abstract: .. IHC-10A-100 100 0.027 10 1.62 0.94 1.31 0.065. IHC-23A-5 5 0.004 23 1.338 0.72 0.94 0.082. IHC-20A-10 10 0.006 20 1.69 0.72 1.5 0.082. IHC-15A-27 27 0.01 15 1.38 1 0.94 0.082. IHC-15A-50 50 0.013 15 1.62 .. datasheet abstract..	24.21 Kb	1 Pages

	First line: Infineon Technologies Cross Reference List Fast IGBT DuoPack Company Product Name n-channel / Abstract: .. Fairchild * SGP10N60RUF 600 TO220 2.2 10A@100°C SGP10N60. Fairchild * SGP10N60RUFD 600 TO220 2.2 10A@100°C anti-parallel diode SKP10N60. Fairchild * SGH10N60RUFD 600 TO3P 2.2 10A@100 .. datasheet abstract..	29.87 Kb	7 Pages

	First line: GS-R1012 120W STEP-DOWN SWITCHING REGULATOR Type GS-R1012 FEATURES Wide input voltage range Abstract: .. Vi = 24V Io = 1.5 to 10A 100 μs. fs Switching Frequency Vi = 24V Io = 1.5 to 10A 100 kHz. η Efficiency Vi = 18 to 36V Io = 10A 90 92 % Rthc Thermal Resistance Case-to-ambient. 7.5 °C/W. * Note: when output current .. datasheet abstract..	569.52 Kb	7 Pages

	First line: GS-R1005 STEP-DOWN SWITCHING REGULATOR Type GS-R1005 FEATURES Wide input voltage range 36V Abstract: .. Vi = 24V Io = 1.2 to 10A 100 μs. fs Switching Frequency Vi = 24V Io = 1.2 to 10A 100 kHz. η Efficiency Vi = 12 to 36V Io = 10A 80 83 % Rthc Thermal Resistance Case-to-ambient. 7.5 °C/W. * Note: when output current .. datasheet abstract..	575.17 Kb	7 Pages

	First line: GS-R1005 STEP-DOWN SWITCHING REGULATOR Type GS-R1005 FEATURES Wide input voltage range 36V Abstract: .. Vi = 24V Io = 1.2 to 10A 100 μs. fs Switching Frequency Vi = 24V Io = 1.2 to 10A 100 kHz. η Efficiency Vi = 12 to 36V Io = 10A 80 83 % Rthc Thermal Resistance Case-to-ambient. 7.5 ΥC/W. * Note: when output current .. datasheet abstract..	85.44 Kb	7 Pages

	First line: GS-R1012 120W STEP-DOWN SWITCHING REGULATOR Type GS-R1012 FEATURES Wide input voltage range Abstract: .. Vi = 24V Io = 1.5 to 10A 100 μs. fs Switching Frequency Vi = 24V Io = 1.5 to 10A 100 kHz. η Efficiency Vi = 18 to 36V Io = 10A 90 92 % Rthc Thermal Resistance Case-to-ambient. 7.5 ΥC/W. * Note: when output current .. datasheet abstract..	87 Kb	7 Pages

	First line: CEP1012L / CEB1012L N-Channel Enhancement Mode Field Transistor FEATURES 120V RDS ON =120m Super high dense Abstract: .. DS ON VGS = 5V, ID = 10A 100 120 mΩ. On-State Drain Current I. D ON VGS = 10V, VDS = 10V 10. 10. A. S Forward Transconductance FS g VDS = 10V, ID = 5A. DYNAMIC CHARACTERISTICS b. Input Capacitance CISS. CRSS. COSS .. datasheet abstract..	36.52 Kb	5 Pages

	First line: TN-48-04 YOUR MODULE TECHNICAL NOTE This article originally published YOUR MODULE SDRAMs Abstract: .. MT8LSDT864AG-10A__ 64MB -8A 125 MHz -10A 100 MHz 3 PC100 100 MHz MT8LSDT864AG-10B__ 64MB -8B 125 MHz -10B 100 MHz 3 PC100 100 MHz MT8LSDT864AG-10C__ 64MB -8C 125 MHz -10C .. datasheet abstract..	53.27 Kb	2 Pages

	First line: SF10-SF50 SF80-SF160 EGP10-EGP50 Abstract: .. 3 BYQ28-100~200 10A 100-200V 1.1 20 TO-220AB 4 BYT28-300~500 10A 300-500V 1.4 60 TO-220AB 5 BYV79-100~200 14A 100-200V 1.3 30 TO-220AC 6 BYT79 .. datasheet abstract..	19.41 Kb	2 Pages

	First line: Corporation FEATURES Matched Matched Monolithic Construction Noise PNP NPN High Speed NPN Abstract: .. IC = 10A 100 — NPN Current Gain Matching hfe VCB = 10 V, IC = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.8 — nVHz. NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz. NPN VBE VBE3 .. datasheet abstract..	58.23 Kb	4 Pages

	First line: assistance order call 531-5782 PT7602 Series 3.3V INPUT PROGRAMMABLE INTEGRATED SWITCHING REGULATOR Abstract: .. Transient Response ttr Io step between 5A and 10A — 100 — μSec. with Cout = 330μF Vos Vo over/undershoot — 200 — mV. Efficiency η Vin = +3.3V, Io = 7A Vo = 1.8V — 78 — % Vo = 1.5V — 76 — % Switching Frequency ƒo .. datasheet abstract..	159.98 Kb	3 Pages

	First line: Corporation FEATURES Matched Transistors Matched Transistors Matched NPNs PNPs Matched NP6N Matched Abstract: .. IC = 10A 100 — NPN Current Gain Matching hfe VCB = 10 V, I C = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, I C = 1 mA, 1 kHz — 0.8 — nV Hz. NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz. NPN VBE THAT300 .. datasheet abstract..	87.73 Kb	5 Pages

	First line: Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET 2SC6090LS Features Triple Diffused Abstract: .. IC=10A 100∝s. 0. 0. 20 40 60 80 100 120 140 160. 2.5. 2.0. 1.5. 1.0. 0.5. 25. 30. 35. 20. 15. 10. 5. 0. 0. 20 40 60 80 100 120 140 .. datasheet abstract..	46.8 Kb	4 Pages

	First line: Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET 2SC6089 Features Triple Diffused Abstract: .. IC=10A 100∝s. 0. 90. 50. 40. 30. 80. 70. 60. 20. 10. 20 0 6040 80 100 140 120 160. IT13093. 2SC6089. No. A0995-4/4 PS .. datasheet abstract..	47.68 Kb	4 Pages

	First line: Corporation FEATURES Matched Transistors Matched Transistors Matched NPNs PNPs Monolithic Construction Noise Abstract: .. IC = 10A 100 — NPN Current Gain Matching hfe VCB = 10 V, I C = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, I C = 1 mA, 1 kHz — 0.8 — nV Hz. NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz. NPN VBE THAT300 .. datasheet abstract..	68.01 Kb	4 Pages

	First line: Corporation FEATURES Matched Transistors Matched Transistors Matched NPNs PNPs Monolithic Construction Noise Abstract: .. IC = 10A 100 — NPN Current Gain Matching hfe VCB = 10 V, I C = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, I C = 1 mA, 1 kHz — 0.8 — nV Hz. NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz. NPN VBE THAT300 .. datasheet abstract..	55.72 Kb	4 Pages

	First line: assistance order call 531-5782 PT7600 Series PROGRAMMABLE INTEGRATED SWITCHING REGULATOR Features Single-Device Abstract: .. Transient Response ttr Io step between 5A and 10A — 100 — μSec. with Cout = 1200μF Vos Vo over/undershoot — 200 — mV. Efficiency η Vin = +5V, Io = 10A Vo = 3.3V — 80 — % Vo = 2.9V — 78 — % Vo = 2.5V — 75 — % Vo = 1.8V — 69 .. datasheet abstract..	174.22 Kb	3 Pages

	First line: Reliable Electronic Solutions MSPTM Reliability White Paper Bourns Inc. Hans-Wolfgang Oertel Vice Abstract: .. 10A >100 MΩ 432 432 432 408 413 410 555 555 555 557 557 557. 10B >100 MΩ 414 414 414 404 406 363 539 549 559 567 559 544. Summary Ave = 374, Max = 432, Min = 313 Ave = 567, Max = 602, Min = 544. The previous data demonstrates .. datasheet abstract..	107.47 Kb	9 Pages

	First line: assistance order call 531-5782 PT7600 Series PROGRAMMABLE INTEGRATED SWITCHING REGULATOR Features Single-Device Abstract: .. Transient Response ttr Io step between 5A and 10A — 100 — μSec. with Cout = 1200μF Vos Vo over/undershoot — 200 — mV. Efficiency η Vin = +5V, Io = 10A Vo = 3.3V — 80 — % Vo = 2.9V — 78 — % Vo = 2.5V — 75 — % Vo = 1.8V — 69 .. datasheet abstract..	188.47 Kb	4 Pages

	First line: PACKAGE OUTLINES dimensions millimeters inches except where noted. complete package specifications well Abstract: .. 10A: 100 mil Stripline. 1 3. 4. 2. EMITTER. EMITTER. COLLECTOR BASE. .020 .508. .100 2.54. .495 ∠ .030 12.57 .. datasheet abstract..	216.71 Kb	14 Pages

	First line: Corporation FEATURES High-Performance Voltage Controlled Amplifier High-Performance RMS-Level Detector Three General-Purpose Opamps Abstract: .. Maximum Frequency for 2 dB Additional Error Iin 10A — 100 — kHz. Iin 3A — 45 — kHz. Iin 300nA — 7 — kHz. Timing Current Set Range IT 1.5 7.5 15 A. Voltage at IT Pin IT = 7.5A -10 +20 +50 mV. Timing Current Accuracy .. datasheet abstract..	227.6 Kb	12 Pages

	First line: Corporation FEATURES High-Performance Voltage Controlled Amplifier High-Performance RMS-Level Detector Three General-Purpose Opamps Abstract: .. Maximum Frequency for 2 dB Additional Error Iin 10A — 100 — kHz. Iin 3A — 45 — kHz. Iin 300nA — 7 — kHz. Timing Current Set Range IT 1.5 7.5 15 A. Voltage at IT Pin IT = 7.5A -10 +20 +50 mV. Timing Current Accuracy .. datasheet abstract..	227.31 Kb	12 Pages

	First line: Corporation FEATURES High-Performance Voltage Controlled Amplifier High-Performance RMS-Level Detector Three General-Purpose Opamps Abstract: .. Maximum Frequency for 2 dB Additional Error Iin 10A — 100 — kHz. Iin 3A — 45 — kHz. Iin 300nA — 7 — kHz. Timing Current Set Range IT 1.5 7.5 15 A. Voltage at IT Pin IT = 7.5A -10 +20 +50 mV. Timing Current Accuracy .. datasheet abstract..	245.3 Kb	12 Pages

	First line: Intel Celeron Processor PGA370 Socket micron process Datasheet Product Features Available 1.10A Abstract: .. 1.10A 1.10A 100 256 ATC 06Bxh. 1A 1A 100 256 ATC 06Bxh. 12 Datasheet. Intel® Celeron® Processor for the PGA370 Socket up to 1.30 GHz on 0.13 μ process. 1.2 Related Documents. The reader of this specification .. datasheet abstract..	872.17 Kb	90 Pages

	First line: Terminal Products Tools Terminals Overview ..K2-K5 Nylon Insulated Ring..K6-K10 Vinyl Insulated Ring..K11-K12 Abstract: .. AB14-10A 100 22-14 #10 21⁄2 .55 .31 .22 .39 AB53 1000 22-14 #10 21⁄2 .55 .31 .22 .39 C51 1000 12-10 #6 5 .66 .31 .25 .48 C10-8A 50 12-10 #8 5 .66 .31 .25 .48 C52 500 12-10 #8 5 .66 .31 .25 .48 C10-10A .. datasheet abstract..	2582.66 Kb	74 Pages

Specsheet Results
	10A100	Solitron Devices, Inc.	Silicon Rectifier	Specification

	10A100A	IC Sensors, Inc.	Pressure-Strain Gauge Sensor - 100mVout Span,0-100psi,Linear .1% Absolute.	Specification

	10A100G	IC Sensors, Inc.	Pressure-Strain Gauge Sensor - 100mVout Span,0-100psi,Linear .1%,Gage.	Specification

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