10A-100 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 7 of about 7 for 10A-100 |
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10A100 |
RFE International, Inc. |
General Purpose Fastrecovery |
283.9 Kb, 1 Pages. |
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10A-100 |
Allen Avionics, Inc. |
8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE |
307.1 Kb, 1 Pages. |
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10A-1000 |
Allen Avionics, Inc. |
8 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE |
307.1 Kb, 1 Pages. |
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10A-100A |
IC Sensors, Inc. |
TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable |
450.65 Kb, 5 Pages. |
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10A-100D |
IC Sensors, Inc. |
TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable |
450.65 Kb, 5 Pages. |
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10A-100G |
IC Sensors, Inc. |
TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable |
450.65 Kb, 5 Pages. |
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10A100V |
Yangzhou YangJie Electronic Co., Ltd. |
SILICON RECTIFIERS |
252.41 Kb, 2 Pages. |
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| Fulltext Datasheet Results |
1 - 15 of about 15 for 10A-100 |
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First line: gs 069 pdf gs 069 VOLTAGE Volts Abstract: .. 120 mΩ VGS=10V, ID=10A 100. 3. 0.85. 1.6 .. Tags: gs 069 pdf N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V gs 069 datasheet abstract.. |
179.53 Kb |
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First line: VOLTAGE Volts Abstract: .. 120 mΩ VGS=10V, ID=10A 100. 3. 0.85 .. Tags: datasheet abstract.. |
179.13 Kb |
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First line: 300f 2 3a BDW94/A/B/C EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON POWER LINEAR SWITCHING APPLICATIONS Complement BDW93, BDW93A, BDW93B BDW93C respectively Characteristic Symbol Rating Unit Collector Emitter Voltage BDW94 VcBO BDW94A BDW94B BDW94C Abstract: .. - 2 mA *DC Current Gain hFE VCE=-3V, lc=-3A 1000 VCE=-3V, lc=-5A 750 20000 Vce=-3V, lc=- 10A 100 "Collector Emitter Saturation Voltage VcE sat le = - 5A, lB= - 20mA 20mA - 2 V lc=- 10A, lB=- 100mA 100mA - 3 V "Base .. Tags: 300f 2 3a 300f diode datasheet abstract.. |
49.38 Kb |
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First line: ESAC81-004 SE024* ESAD81-004 SE024 Schottky-Barrier Diodes 223*712 oddish Dual package collmer semiconductor Ratings characteristics Type Maximum VRRM Volts ratings; Amps, Ifsm Amps, Thermal ratings Tstg Characteristics (Ta=25"C) Max. Volts IRRM Max. weight Grams Dimensic Fig. SE024 0.95 0.55 ( Abstract: .. 6 ESAD81 ESAD81 -004 40 15 Tc = 100'C 250 -40 to + 25 0.5 If=10A 100 *4 18 Fig. 7 ESAD89-009 ESAD89-009 90 25 To= 90'C 150 —40 to + 25 0.9 If=10A 100 18 Fig. 7 Notes: > indicates conditions Other conditions *' Square .. Tags: SE024 ESAD81-004 SE024* ESAC81-004 datasheet abstract.. |
96.71 Kb |
2 Pages |
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First line: 100MA 45 V NPN BDW93/A/B/C EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON HAMMER DRIVERS, AUDIO AMPLIFIERS Complement BDW94, BDW94A, BDW94B BDW94C respectively Characteristic Symbol Rating Unit Collector Emitter Voltage: BDW93 VcbO BDW93A Abstract: .. 2 mA *DC Current Gain hFE VCE = 3V, lc=3A 1000 VCE = 3V, lc=5A 750 20000 VCE = 3V, lc= 10A 100 "Collector Emitter Saturation Voltage VcE sat lc= 5A, lB= 20mA 20mA 2 V lc= 10A, lB= 100mA 100mA 3 V "Base Emitter Saturation .. Tags: 100MA 45 V NPN datasheet abstract.. |
84.33 Kb |
2 Pages |
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First line: Single-in-Line Package Passive Delay Lines DELAY RISE DELAY RISE OHMS DELAYS TIME OHMS PART OHMS DELAYS TIME OHMS PART Max. NUMBER Max. NUMBER Max. Max. EPA572-5A EPA572-5B EPA572-10A EPA572-10B EPA572-20A EPA572-20B EPA572-30A EPA572-30B Abstract: .. 50 5 1 2 0.3 EPA572-5A EPA572-5A 100 5 1 2 0.5 EPA572-5B EPA572-5B 50 10 2 3 0.5 EPA572-10A EPA572-10A 100 10 2 3.3 1.0 EPA572-10B EPA572-10B 50 20 4 6 0.8 EPA572-20A EPA572-20A 100 20 4 6 1.5 EPA572-20B EPA572-20B 50 30 6 9 1.2 EPA572-30A EPA572-30A 100 30 6 9 2.5 EPA572-30B EPA572-30B 50 40 8 12 .. Tags: datasheet abstract.. |
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First line: ICRO SYSTES Very High Accuracy onolithic Instrumentation Amplifier INA101 Ultra-Low Voltage Drift: Abstract: .. fi INPUT OFFSET VOLTAGE Initial Offset at 25 C  25 200/G  50 400/G  10 100/G  25 200/G  10 100/G  25 200/G //V vs. Temperature  2 20/G  0.75 10/G  0.25 10/G pvrc .. Tags: datasheet abstract.. |
120.79 Kb |
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First line: MAW-series UMBOAA Features equipment designed conform regulations such VCCI, CISPR, FCC, VDE, etc. Attenuation effect against high voltage pulse noise Attenuates conductive emission from power supply Leakaae current: max. (250V, 60Hz) High shielded effect (covered metal case) Abstract: .. MAW-1202-22 MAW-1202-22 10a 100 " MAW-1203-22 MAW-1203-22 100""rrn---,-,~~~--.-~~~r--,-,~ 100 ao 60. , , aa. , - -, -, :s c .~ 1D o. / aa 6a. ao. ~-. -- - -. 6a 40 / 1-' :s c 0. 1D. 60 ~ 4a 2a. ~ 2a a 0.05 0.1 0.15 0.3 0.5 3 5 10. c " ~ 40 c " " ~ --; ..,<. .. Tags: datasheet abstract.. |
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First line: IRF 444 H YG802C06 YG802C06<IOA) Features mmim^tk^titiyji'^-M^'irf Insulated package fully molding. X-i-v^yafcT-F^iltUi*^ Super high speed switching. Abstract: .. YG802C06 YG802C06 10A 100 A 10 ---———Li_L I 3 5 10 MtiSLia 5OHz 0> Surge Capability 10"3 10"' 10"1 10 to1 10J †fr H t sec aii-fve-^/x Transient Thermal Impedance ■^a ^ ooDmai 313 A .. Tags: YG802C06 IRF 444 H datasheet abstract.. |
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First line: "Microphone Preamplifiers" THAT340P THAT300P pnp 8 transistor array Matched Transistors (300) Matched Transistors (320) Matched NPNs PNPs (340) Monolithic Construction Noise 0.75 (PNP) (NPN) High Speed (NPN) (PNP) Excellent Matching typical between devices same gender Dielectrically Isolated crossta Abstract: .. IC = 10A 100 — NPN Current Gain Matching hfe VCB = 10 V, I C = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, I C = 1 mA, 1 kHz — 0.8 — nV Hz. NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 350 MHz. NPN VBE THAT300 THAT300 .. Tags: pnp 8 transistor array THAT300P THAT340P "Microphone Preamplifiers" datasheet abstract.. |
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First line: 2SC6089 SANYO 2SC6089 Ordering number ENA0995 2SC6089 Abstract: .. IC=10A 100∝s. 0. 90. 50. 40. 30. 80. 70. 60. 20. 10. 20 0 6040 80 100 140 120 160. IT13093 IT13093 . 2SC6089 2SC6089 . No. A0995-4 A0995-4 /4 PS .. Tags: SANYO 2SC6089 2SC6089 2SC6089 |
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First line: 2sc6090* 2SC6090LS 2SC6090* Ordering number ENA0996 2SC6090LS Abstract: .. IC=10A 100∝s. 0. 0. 20 40 60 80 100 120 140 160. 2.5. 2.0. 1.5. 1.0. 0.5. 25. 30. 35. 20. 15. 10. 5. 0. 0. 20 40 60 80 100 120 140 .. Tags: 2sc6090*Â 2sc6090ls 2sc6090* 2SC609* 2SC60* 2SC6090LS |
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First line: heat sink to220 resistor 220 ohms 1W POwer resistor 0,25 100w RPH-10B 100W high power resistor HIGH POWER RESISTOR 140W content this specification change without notification 12/07/07 Custom solutions available. ORDER RHP-10A-100 Packaging pieces) tube tray (flanged type only) (ppm/°C) +100 +250 Abstract: .. RHP-10A-100 F Y R Packaging 50 pieces T = tube or R= tray flanged type only TCR ppm/ C Y = +50 Z = +100 N = +250. Tolerance. J = +5% F = +1% Resistance. R02 = 0.02 Ω R10 = 0.10 Ω 1R0 = 1.00 Ω. 100 = 10.0 Ω 101 = 100 .. Tags: 100W high power resistor RPH-10B POwer resistor 0,25 100w resistor 220 ohms 1W heat sink to220 2 x 20w amplifier 10X-1 RHP-10A-100 |
291.88 Kb |
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First line: 4301PA bel 100n transistor bel 100n High-Performance Voltage Controlled Amplifier High-Performance RMS-Level Detector Three General-Purpose Opamps Wide Dynamic Range: >115 THD: <0.03% Cost: $4.39 (`000s) Surface-Mount Packages THAT Analog Engine® Dynamics Processor Abstract: .. Maximum Frequency for 2 dB Additional Error Iin 10A — 100 — kHz. Iin 3A — 45 — kHz. Iin 300nA 300nA — 7 — kHz. Timing Current Set Range IT 1.5 7.5 15 A. Voltage at IT Pin IT = 7.5A -10 +20 +50 mV. Timing Current Accuracy .. Tags: VCA Associates bel 100n transistor BEL 100N 4301S 4301PA 4301P datasheet abstract.. |
245.3 Kb |
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First line: intelai RF3V49092, RF3S49092SM November 1999 File Number 4600.1 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives op Abstract: .. a- 150 10 = 10A 100 ~ 10 = 20A. I. ::J U. ~ ~ , < c 0: 20r--- 20r--- ~-----r----;-~~+---~r---~----~ ~ .::..0 .. Tags: datasheet abstract.. |
791.45 Kb |
13 Pages |
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