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1 - 22 of about 22 for 10502 |
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First line: Watts Volts Pulsed Avionics GENERAL DESCRIPTION high power COMMON BASE bipolar transistor. Abstract: .. 10502. 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz. GENERAL DESCRIPTION The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 .. datasheet abstract.. |
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First line: ISDN S-Interface Transformers Dual Transmit Receive T-1050X 2000V Series Meets Pulse Waveform Abstract: .. T-10552 T-10502 T 1:1.8 22 15 100 140 2.5 4.2. R 1:2.5 22 30 100 150 2.5 5.8. T-10553 T-10503 T 1:2 22 15 100 80 2.3 4.0. R 1:2 22 15 100 80 2.3 4.0. T-10554 T-10504 T 1:2.5 22 15 - 40 100 110 2.5 5.8. R 1:2.5 22 15 - 40 .. datasheet abstract.. |
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First line: Vishay BCcomponents Thermistors Long Lead Sensors FEATURES Accuracy between Small diameter Abstract: .. 5 3977 10502 502SB0. 10 3977 10103 103SB0. R25 - VALUE kΩ B25/85 - VALUE K 12NC ORDERING CODE 2381 645.. SAP MATERIAL NO. NTCLE300E3.. 3 3977 20302 302SB. 5 3977 20502 502SB. 10 3977 20103 103SB .. datasheet abstract.. |
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First line: Vishay BCcomponents Thermistors Long Lead Sensors FEATURES Accuracy between Small diameter Abstract: .. 5 3977 10502 502SB. 10 3977 10103 103SB. R25 - VALUE kΩ B25/85 - VALUE K 12NC ORDERING CODE 2381 .. datasheet abstract.. |
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First line: TELEFUNKEN Semiconductors BUF630 Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
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First line: TELEFUNKEN Semiconductors BUD630 Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
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First line: BUD630 Vishay Telefunken Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
131.84 Kb |
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First line: BUF630 Vishay Telefunken Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
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First line: BUF630 Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
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First line: BUD630 Silicon High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED Abstract: .. 95 10502. I ‐ Collector Current A C. VCE ‐ Collector Emitter Voltage V 800 mA. 590 mA. 400 mA. 100 mA. 76 mA. IB = 970 mA. Figure 5. IC vs. VCE. 95 10500. 0.01 0.1 1. 1. 10. 100. h ‐ Forward DC Current Transfer Ratio FE .. datasheet abstract.. |
164.29 Kb |
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First line: BUK95 / 963R2-40B TrenchMOS logic level Rev. January Product data Product profile Description N-channel Abstract: .. - 7877 10502 pF. Coss output capacitance - 1397 1676 pF. Crss reverse transfer capacitance - 608 833 pF. td on turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; R G = 10Ω. - 68 - ns. tr rise time - 268 - ns. td off .. datasheet abstract.. |
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First line: Freescale Semiconductor Technical Data Document Number MMG3010NT1 Rev. Heterojunction Bipolar Transistor InGaP Abstract: .. 2.4 0.21882 96.635 5.00516 85.611 0.10502 -32.469 0.12050 132.176. 2.45 0.22193 95.395 4.97224 83.821 0.10521 -33.265 0.12557 130.946. 2.5 0.22303 93.907 4.93831 82.052 0.10527 -34.008 0.12957 .. datasheet abstract.. |
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First line: BUK95 / 963R2-40B TrenchMOS logic level Rev. October Product data Product profile Description N-channel Abstract: .. - 7877 10502 pF. Coss output capacitance - 1397 1676 pF. Crss reverse transfer capacitance - 608 833 pF. td on turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; R G = 10Ω. - 68 - ns. tr rise time - 268 - ns. td off .. datasheet abstract.. |
128.38 Kb |
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First line: Freescale Semiconductor Technical Data Document Number MMG3010NT1 Rev. Heterojunction Bipolar Transistor InGaP Abstract: .. 2.4 0.21882 96.635 5.00516 85.611 0.10502 -32.469 0.12050 132.176. 2.45 0.22193 95.395 4.97224 83.821 0.10521 -33.265 0.12557 130.946. 2.5 0.22303 93.907 4.93831 82.052 0.10527 -34.008 0.12957 .. datasheet abstract.. |
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First line: BUK95 / 96 / 9E3R2-40B TrenchMOS logic level Rev. November Product data Product profile Description N-channel Abstract: .. - 7877 10502 pF. Coss output capacitance - 1397 1676 pF. Crss reverse transfer capacitance - 608 833 pF. td on turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; R G = 10Ω. - 68 - ns. tr rise time - 268 - ns. td off .. datasheet abstract.. |
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First line: Freescale Semiconductor Technical Data Document Number MMG3010NT1 Rev. Broadband High Linearity Amplifier Abstract: .. 2400 0.21882 96.635 5.00516 85.611 0.10502 -32.469 0.12050 132.176. 2450 0.22193 95.395 4.97224 83.821 0.10521 -33.265 0.12557 130.946. 2500 0.22303 93.907 4.93831 82.052 0.10527 -34.008 0 .. datasheet abstract.. |
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First line: BUK95 / 963R2-40B TrenchMOS logic level Rev. April Product data Product profile Description N-channel Abstract: .. - 7877 10502 pF. Coss output capacitance - 1397 1676 pF. Crss reverse transfer capacitance - 608 833 pF. td on turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; R G = 10Ω. - 68 - ns. tr rise time - 268 - ns. td off .. datasheet abstract.. |
130.42 Kb |
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First line: Allen Bradley Drives Part Numbers Cross Reference PART PART PART SK-1065 SK-1206 Abstract: .. -02 100022 01P01-10403-02 100023 01P01-10500-01 100307 01P01-10500-02 100024 01P01-10502-02 100025 01P01-10503-02 100026 01P01-10600-01 100027 01P01-10603-01 100028 01P01-11000-01 .. datasheet abstract.. |
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First line: Section Reference Index Connectors Cable Assemblies Sockets. 12-132 Semiconductors Transistors Diodes Rectifiers Abstract: .. 56.0 6.3 @ 8.8 12.6 @ 4.4 10502-ND 19.84 12.30 10.44 VPP12-4400. 2.5 8 @ 0.3 16 @ 0.15 10475-ND 9.62 6.51 5.70 VPP16-150. 5.0 8 @ 0.62 16 @ 0.31 10496-ND 10.36 7.04 6.16 VPP16-310. 10.0 8 @ 1.25 16 @ 0.62 10468 .. datasheet abstract.. |
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First line: Compiled Herman Boel James Niven EMWG homepage www.emwg.info 1998-2005 Preface Copyright Welcome Abstract: .. für Internationale Beziehungen, Postfach 210231, 10502 Berlin, Germany; www.puk.org; v/s Dara Gafori 2000 Voice of Iraqi Kurdistan - 1539. ? - 1224. Ireland Eire RTE Radio 1 - 252 567 729 - Reception .. datasheet abstract.. |
843.08 Kb |
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First line: INTERACTIVE data book THERMISTORS vishay vse-db0069-0610 Notes navigate Click vishay logo datasheet Abstract: .. 5 3977 10502 502SB0. 10 3977 10103 103SB0. R25 - VALUE kΩ B25/85 - VALUE K 12NC ORDERING CODE 2381 645.. SAP MATERIAL NO. NTCLE300E3.. 3 3977 20302 302SB. 5 3977 20502 502SB. 10 3977 20103 103SB .. datasheet abstract.. |
6358.71 Kb |
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First line: Version Produced June SProgrammable controller Satellite Model name JW50H / 70H / 100H Programming Manual would Abstract: .. コ1050 10507 10506 10505 10504 10503 10502 10501 10500 001050. コ1051 10517 10516 10515 10514 10513 10512 10511 10510 001051. コ1052 10527 10526 10525 10524 10523 10522 10521 10520 001052. コ1053 10537 .. datasheet abstract.. |
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