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R5F61668RZN50FPV Renesas Electronics Corporation MCU FLASH 1024K ROM 144-LQFP visit Digikey Buy
25AA1024-I/W16K Microchip Technology Inc 1024k, 128K X 8 , 1.8V SER EE, WAFER, -40C to +85C, Uncut Wafer, WJAR visit Digikey
25LC1024-I/W16K Microchip Technology Inc 1024k, 128K X 8, 2.5V SER EE IND, WAFER, -40C to +85C, Uncut Wafer, WJAR visit Digikey
25AA1024-I/WF16K Microchip Technology Inc 1024k, 128K X 8 , 1.8V SER EE, WAFER on FR, -40C to +85C, Wafer-Frame, WFRAME visit Digikey
R5F64189DFB#U0 Renesas Electronics Corporation MCU 3/5V 1024K I-TEMP PB-FREE 100-LQFP visit Digikey Buy
R5F64169DFB#U0 Renesas Electronics Corporation MCU 3.0/5.5V 1024K/63K -40~85C 100-LQFP visit Digikey Buy

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1024K

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev , .09. 2012 Mar.12. 2012 July.19. 2012 AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 , static random access memory organized as 1024K words by 16 bits. It is fabricated using very high , OE# Alliance Memory, Inc. Chip Enable Input Ground AS7C316098A 1024K X 16 BIT HIGH SPEED , for extended period may affect device reliability. Alliance Memory, Inc. 2 AS7C316098A 1024K Alliance Memory
Original
AS7C316098A-10TIN AS7C316098A-10BIN

as7c316098a

Abstract: AS7C316098A Rev. 1.2 1024K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 , . 0 AS7C316098A Rev. 1.2 1024K X 16 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION The AS7C316098A is a 16M-bit high speed CMOS static random access memory organized as 1024K words by 16 bits. It , Alliance Memory, Inc. 1 AS7C316098A Rev. 1.2 1024K X 16 BIT HIGH SPEED CMOS SRAM PIN , . Alliance Memory, Inc. 2 AS7C316098A Rev. 1.2 1024K X 16 BIT HIGH SPEED CMOS SRAM TRUTH TABLE
Alliance Memory
Original

b998

Abstract: 1024K 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip , ) Temperature Range Available in 90 ns Access Time Only Y Reference the 28F010 1024K (128K x 8) CMOS , COPYRIGHT INTEL CORPORATION 1996 November 1995 Order Number 271294-002 28F010 1024K (128K x 8) FLASH MEMORY 271294 ­ 1 28F010 1024K (128K x 8) Flash Memory Die Photo 2 28F010 1024K (128K , 1024K (128K x 8) Flash Memory Die Bond Pad Layout 3 28F010 1024K (128K x 8) FLASH MEMORY 1 1
Intel
Original
X28F400BX-T80 AP-316 AP-325 b998 B83 004 b1545 b83 006 b1257 b175 ER-20 ER-24 RR-60

AS7C38096B

Abstract: 1024K AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev , 2014 AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION , . Ordering Information Product part No Org Temperature Package AS7C38096B-10BIN 1024K x 8 , AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION , Supply VSS I/O DATA CIRCUIT Chip Enable Input VCC 1024Kx8 MEMORY ARRAY Data Inputs
Alliance Memory
Original

transistor t 2190

Abstract: SmartDie inte] 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification Flash Electrical Chip , 28F010 1024K (128K x 8) FLASH MEMORY intel, 28F010 1024K (128K x 8) Flash Mem ory Die Photo 2 , notch. Figure 1. 28F010 1024K (128K x 8) Flash M em ory Die/Bond Pad Layout 3 28F010 1024K (128K x 8) FLASH M EMORY 1.1 Pad D escription Table 1. 28F010 1024K (128K x 8) Flash M em ory , 36.7 44.0 52.1 62.2 70.1 70.5 62.2 52.6 39.3 OE# A11 A9 A8 A13 4 0 28F010 1024K (128K x 8
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OCR Scan
transistor t 2190 SmartDie intel 2114 X2BF010-90 USA/DP-019/694
Abstract: in te l 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification Flash Electrical , Range â'" Available in 90 ns Access Time Only â  Reference the 28F010 1024K (128K x 8) CMOS Flash , 28F010 1024K (128K x 8) FLASH MEMORY 28F010 1024K (128K x 8) Flash Memory Die Photo 10-2 â  452bl7S Q155bG3 2T1 â  P fö ü U lÃ" lÃ" K R f 28F010 1024K (128K x 8) FLASH MEMORY in te l , 1. 28F010 1024K (128K x 8) Flash Memory Die/Bond Pad Layout t 4öEbl7S 0155b04 13fi im iM  -
OCR Scan
28F400B

AS6C8008

Abstract: SRAM TTL 1024K x 8 JANUARY 2008 January 2007 AS6C8008 1024K X 8 BIT SUPER 512K POWER CMOS SRAM CMOS SRAM LOW X 8 , 1024K x8 MEMORY RRAY A CE#, CE2 VCC DECODER Data Inputs/Outputs OE# A0-A19 , COLUMN I/O Alliance Memory Inc. Page 1 of 11 JANUARY 2008 January 2007 AS6C8008 1024K X 8 , January 2007 AS6C8008 1024K X 8 BIT SUPER 512K POWER CMOS SRAM CMOS SRAM LOW X 8 BIT LOW POWER , January 2007 AS6C8008 1024K X 8 BIT SUPER 512K X 8 BIT LOW POWER CMOS SRAM LOW POWER CMOS SRAM
Alliance Memory
Original
SRAM TTL 1024K x 8 AS6C8008-55ZIN LOW512K sram battery JANUARY/2008

AS7C316098B

Abstract: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev , 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL , 1024K words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology , Product part No AS7C316098B-10TIN Confidential Org 1024K x 16 Temperature Package Industrial -40°C to 85°C 1 54-pin 400mil TSOP-II Rev1.0 â'" June 2014 AS7C316098B 1024K X 16
Alliance Memory
Original

SmartDie

Abstract: 28F010 intel PEHHLOIMOIiMIERf 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification , Range - Available in 90 ns Access Time Only Reference the 28F010 1024K ( 128K x 8) CMOS Flash Memory , . October 1994 Order Number: 271294-002 10-1 28F010 1024K (128K x 8) FLASH MEMORY ¡niel 28F010 1024K (128K x 8) Flash Memory Die Photo in te l. 1.0 D IE SP E C IF IC A T IO N S GEL-PAK* Notch 28F010 1024K (128K x 8) FLASH MEMORY 2 7 1 2 9 4 -2 NOTE: This drawing and the photo on the
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OCR Scan
Abstract: ïƒ' LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY , Mar.26. 2014 Sep.4. 2014 ïƒ' LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 , static random access memory organized as 1024K words by 16 bits. It is fabricated using very high , Inputs/Outputs 1024Kx16 MEMORY ARRAY DQ8-DQ15 Upper Byte CE# CE2 WE# OE# LB# UB# Lower , . 1.2 1024K X 16 BIT HIGH SPEED CMOS SRAM PIN CONFIGURATION Lyontek Inc. reserves the rights to Lyontek
Original
LY61L102516AGL LY61L102516AML-10 LY61L102516AML-10T LY61L102516AML-10I LY61L102516AML-10IT LY61L102516AGL-10
Abstract: ® LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev , : 886-3-6668836 0 Issue Date Sep.25.2008 May.20.2009 Sep.11.2009 ® LY62102516 1024K X 16 BIT LOW , VCC DQ8-DQ15 Upper Byte Write Enable Input UB# DQ0-DQ7 Lower Byte WE# 1024Kx16 , : 886-3-6668838 FAX: 886-3-6668836 1 ® LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 PIN , : 886-3-6668838 FAX: 886-3-6668836 2 ® LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 Lyontek
Original

LY62L10248

Abstract: ly62l1024 LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev , Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY62L10248 1024K X , Supply Ground NC I/O DATA CIRCUIT Write Enable Input VSS 1024Kx8 MEMORY ARRAY Chip , LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 PIN CONFIGURATION 1 44 A5 A3 2 , DQ7 LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 ABSOLUTE MAXIMUN RATINGS
Lyontek
Original
ly62l1024
Abstract: ® LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev , ., Hsinchu, Taiwan. TEL: 886-3-5165511 FAX: 886-3-5165522 0 ® LY6210248 1024K X 8 BIT LOW POWER , 1024Kx8 MEMORY ARRAY Chip Enable Inputs VCC DECODER Data Inputs/Outputs OE# A0-A19 , Hsuch-Fu Rd., Hsinchu, Taiwan. TEL: 886-3-5165511 FAX: 886-3-5165522 1 ® LY6210248 1024K X 8 BIT , : 886-3-5165522 2 DQ5 Vcc NC DQ7 ® LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.2 Lyontek
Original

TK 69 TSOP

Abstract: 1024KX16 MITSUBISHI LSIs TARGET SPEC (REV. 2.0) M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY , MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024 , (1024K-WORD BY 16-BIT) CACHE DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM BLOCK DIAGRAM #2 DRAM Column , -10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHE DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM FUNCTION , MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHE DRAM WITH 16K (1024
Mitsubishi
Original
M5M4V16169TP-10 TK 69 TSOP 1024KX16 7WB1 AD011 1-OF-128 M5M4V16169TP M5M4V16169TP-12 M5M4V16169TP-15 70P3S 0472MAX

AS6C8008A

Abstract: JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS SRAM REVISION HISTORY Revision , grade Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011 1 JANUARY 2008 AS6C8008A 1024K X 8 , Connection Vcc Vss A0 - A19 DQ0 ­ DQ7 DECODER 1024Kx8 MEMORY ARRAY CE#, CE2 WE# OE# VCC VSS NC , JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS SRAM PIN CONFIGURATION A B C D E F G H , 2 3 4 TFBGA 5 6 3 JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS
Alliance Memory
Original

as6c1616

Abstract: AS6C1616-55TIN APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The , DATA CIRCUIT Write Enable Input VCC DQ0-DQ7 Lower Byte WE# UB# 1024Kx16 MEMORY ARRAY , CIRCUIT APRIL/2010 V1.b ALLIANCE MEMORY PAGE 1 of 11 APRIL 2010 AS6C1616 1024K X 16 BIT , /2010 V1.b ALLIANCE MEMORY PAGE 2 of 11 APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER , of 11 APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM 4. Typical values are
Alliance Memory
Original
AS6C1616-55TIN
Abstract: ® LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 REVISION HISTORY Revision , ® LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 FEATURES GENERAL DESCRIPTION The , . TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM SYMBOL DECODER 1024Kx16/2048Kx8 , FAX: 886-3-6668836 2 ® LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 PIN Lyontek
Original

AS6C8008

Abstract: sram 8008 JANUARY 2008 January 2007 AS6C8008 1024K X 8 BIT SUPER 512K X 8 BIT LOW POWER CMOS SRAM LOW , Input Power Supply Ground NC I/O DATA CIRCUIT Chip Enable Inputs VSS 1024Kx8 MEMORY , /O Alliance Memory Inc. Page 1 of 11 JANUARY 2008 January 2007 AS6C8008 1024K X 8 BIT , AS6C8008 1024K X 8 BIT SUPER 512K X 8 BIT LOW POWER CMOS SRAM LOW POWER CMOS SRAM ABSOLUTE MAXIMUM , - 4 mA - 6 80 µA Page 3 of 11 JANUARY 2008 January 2007 AS6C8008 1024K
Alliance Memory
Original
sram 8008 512K x 8 bit sram 32 pin
Abstract: 19-6078; Rev 11/11 DS1248/DS1248P 1024K NV SRAM with Phantom Clock FEATURES PIN , A7 A6 A5 A4 A3 A2 A1 A0 DS1248/DS1248P 1024K NV SRAM with Phantom Clock ORDERING , ) required. Must be ordered separately. DETAILED DESCRIPTION The DS1248 1024K NV SRAM with phantom , 1024K NV SRAM with Phantom Clock PIN DESCRIPTION EDIP PIN PowerCap NAME 1 1 RST 2 , Input No Connect Power-Supply Input Ground 3 of 19 DS1248/DS1248P 1024K NV SRAM with Phantom Maxim Integrated Products
Original
DS124 MDT32 AM/PM/12/24-MODE
Abstract: ® LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev , : 886-3-6668836 0 ® LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 FEATURES GENERAL , Input VSS 1024Kx8 MEMORY ARRAY Chip Enable Inputs VCC DECODER Data Inputs/Outputs , : 886-3-6668838 FAX: 886-3-6668836 1 ® LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 PIN , : 886-3-6668836 2 DQ5 Vcc NC DQ7 ® LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 Lyontek
Original
Abstract: DS1248/DS1248P 1024k NV SRAM with Phantom Clock www.maxim-ic.com FEATURES § Real-Time Clock , DS1248/DS1248P 1024k NV SRAM with Phantom Clock ORDERING INFORMATION PART DS1248Y-70 DS1248Y , . The top mark will include a "+" symbol on lead-free devices. DETAILED DESCRIPTION The DS1248 1024k , containers. 2 of 18 DS1248/DS1248P 1024k NV SRAM with Phantom Clock PIN DESCRIPTION EDIP 1 2 3 4 5 , Active-Low Write-Enable Input No Connect Power-Supply Input Ground 3 of 18 DS1248/DS1248P 1024k NV Maxim Integrated Products
Original
DS1244P DS1251P DS1248P G56-G0002-001 G56-G0003-001
Abstract: (REV22) MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16 , Vdd MITSUBISHI LS Is M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16 , 2.2) Oct., 1997 MITSUBISHI LS Is M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W O R D BY , M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM FUNCTION , MITSUBISHI LS Is M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W O R D BY 16-BIT) CACHED DRAM W ITH -
OCR Scan
4V16169R
Abstract: (REV22) MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16 , M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM VDD BLOCK , ,-15 16M C D R A M :16M (1024K -W O R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W O RD BY 16-BIT) SRAM , LS Is M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K , MITSUBISHI LS Is M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W O R D BY 16-BIT) CACHED DRAM W ITH -
OCR Scan
4V16169TP 4V16169TP-10 4V16169TP-12 4V16169TP-15

8x16s

Abstract: 1kx16 v ^ EV 2 2) MITSUBISHI LSls M5M4V16169TP-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16 , (1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM BLOCK DIAGRAM " VDD - , ELECTRIC (REV 2.2) Oct., 1997 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16MCDRAM:16M(1024K-WORD BY , ELECTRIC (REV 2.2) Oct., 1997 3 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16MCDRAM: 16M (1024K , ,-15 16MCDRAM: 16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM FUNCTION
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OCR Scan
8x16s 1kx16 AD-011M m5m4v16 ac45 DQO-15
Abstract: ® LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 REVISION HISTORY Revision , : 886-3-6668838 FAX: 886-3-6668836 0 ® LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 , 16M-bit high speed CMOS static random access memory organized as 1024K words by 16 bits. It is , , Hsinchu 300, Taiwan TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY61L102416A 1024K X 16 BIT HIGH , 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev.1.5 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on Vcc Lyontek
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LY61L102416AGL-12 LY61L102416AGL-12T LY61L102416AGL-10IT LY61L102416AGL-12I LY61L102416AGL-10I LY61L102416AGL-10T
Abstract: 19-6078; Rev 11/11 DS1248/DS1248P 1024K NV SRAM with Phantom Clock FEATURES ï'§ PIN , A0 DS1248/DS1248P 1024K NV SRAM with Phantom Clock ORDERING INFORMATION PART TEMP RANGE , . Must be ordered separately. DETAILED DESCRIPTION The DS1248 1024K NV SRAM with phantom clock is a , 1024K NV SRAM with Phantom Clock PIN DESCRIPTION EDIP PIN PowerCap NAME 1 1 RST 2 , Input No Connect Power-Supply Input Ground 3 of 19 DS1248/DS1248P 1024K NV SRAM with Phantom Maxim Integrated Products
Original
Abstract: ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM REVISION , MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL , AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM PIN CONFIGURATION A OE# A0 A1 A2 , 5 6 DQ5 Vcc NC DQ7 ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW , ,ISB1 ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM DC Alliance Memory
Original

DS1244P

Abstract: DS1248 DS1248/DS1248P 1024k NV SRAM with Phantom Clock www.maxim-ic.com FEATURES § Real-Time , : www.maxim-ic.com/errata. 1 of 18 REV: 070705 DS1248/DS1248P 1024k NV SRAM with Phantom Clock ORDERING , include a "+" symbol on lead-free devices. DETAILED DESCRIPTION The DS1248 1024k NV SRAM with phantom , 1024k NV SRAM with Phantom Clock PIN DESCRIPTION EDIP PIN PowerCap NAME 1 1 RST 2 , Input No Connect Power-Supply Input Ground 3 of 18 DS1248/DS1248P 1024k NV SRAM with Phantom
Maxim Integrated Products
Original
DS1248Y-100IND DS1248Y-70IND DS1248YP-70 DS9034PCX Ultrasonic cleaning
Abstract: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE , 1024K x 36 MEMORY ARRAY I/O0L - I/O35L Din_L Din_R I/O 0R - I/O 35R CLKL A19L A0L REPEATL , 1024K x 36 Dual-Port Synchronous Static RAM Commercial Temperature Range Description: The IDT70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port , . 6.42 2 IDT70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Commercial Integrated Device Technology
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133MH 36864K 70T3509M AN-144 AN-253 AN-254
Abstract: ® LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision , Feb.20.2008 Jul.2.2008 Mar.30.2009 May.7.2010 Aug.29.2013 ® LY62L102516 1024K X 16 BIT , : 886-3-6668836 1 ® LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 PIN CONFIGURATION A , : 886-3-6668836 2 ® LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 TRUTH TABLE MODE , 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 CAPACITANCE (TA = 25â"ƒ, f = 1.0MHz) PARAMETER Input Lyontek
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02516GL-55LLET LY62L102516GL-55LLI LY62L102516GL-55LLIT LY62L102516GL-70SL LY62L102516GL-70SLT LY62L102516GL-70SLE
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