NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 500V 102 1000V 202 2000V 302 3000V Specifications are subject to change without notice. ... | Original |
1 pages, |
Meritek capacitor datasheet abstract |
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| Abstract: R.V. 25V 50V 100V 250V 4700 501 500V 102 1000V 202 2000V 302 3000V 10000 22000 ... | Original |
1 pages, |
Meritek capacitor 4700 uF Meritek capacitor 4700 Meritek 6.8 nF ceramic capacitor capacitor 680 / 250v capacitor 16v 22000 4700 50v Meritek ceramic capacitor datasheet abstract |
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| Abstract: 2 3 D2 IN4148 IN4148 C5 C4 102/1000V X 2 4 8 TRIAC 97A6 7 FI R3 1.5M R6 ... | Original |
4 pages, |
sensor IN4148 ic in4007 sensor IN4148 datasheet IN4007 DATASHEET IN4007 IN4148 ic tt6061a tt8486 TT6061 8486A tt8486a 97A6 TT6061A TRIAC 97A6 TT6061A/TT8486A TT6061A/TT8486A TT6061A/TT8486A abstract |
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| Abstract: 112 136 139 154 1.02 1.02 1.02 1.02 1.05 1.05 400 450 10� 2 Ni/Ni/Au (Back & Front Side) Metallization VF@ IF (max.) 4 V 1.02 0.98 1.02 0.98 1.02 1.02 0.98 1.02 1.02 1000V 1100V 800V 900V 600V 1.02 720V IR , 900V 660V 600V IR 1.02 1100V 1000V VR @ IR (min.) 20 41 46 50 58 132 165 , 27.5 30 32 40 114 148 10� Ni/Ni/Au (Back & Front Side) V 1.02 1.02 0.98 ... | Original |
3 pages, |
datasheet abstract |
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| Abstract: 8kva 12kVA ESD1005 0.80 �1 24VDC 24VDC 1000V max. KVA 2402 102 NA 29 () 2402 24V 102 1000V NA180 NA180 071.0�5 291.6�8 1 No 1 1000V , 125 24 1000V max. 650V typ. 200V max. 100V typ. 10050.1pF max. (0.06pF typ. ... | Original |
3 pages, |
NA180 JISZ3282 H63A H60A H60S RH -24V 0IEEE1394 0IEEE1394 abstract |
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| Abstract: BYP 102 FRED Diode · Fast recovery epitaxial diode · Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 102 1000V 50A 130ns TO-218 AD C67047-A2071-A2 C67047-A2071-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5 , 68-1 - Semiconductor Group 1 °C K/W - 40 / 150 / 56 12.96 BYP 102 , 12.96 BYP 102 Typ. forward characteristics Typ. reverse current IF = f (VF) IRRM = f ... | Original |
3 pages, |
C67047-A2071-A2 datasheet abstract |
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| Abstract: significant digits + number of zeros Code 101 251 501 R.V. 100V 250V 500V 102 1000V 202 2000V , 4700 501 500V 102 1000V 202 2000V 302 3000V 10000 22000 47000 100000 150000 COG , significant digits + number of zeros. Code 250 500 101 25V 50V 100V 251 250V 501 500V 102 1000V 202 2000V 302 3000V EIA CASE SIZE 0201 0402 0603 0805 1206 1210 , 561 680 681 820 821 1000 102 1200 122 1500 152 1800 182 2200 ... | Original |
21 pages, |
Meritek ceramic capacitor 680PF 50V Meritek capacitor 4700 uF COG 1KV CG 332 100v 5600 uF capacitor 10pf 3KV 330pf 82pf 561 1KV CERAMIC CAPACITOR MSC 501 capacitor 33PF, 250V, 5, 1808, NPO CAP 103 2KV capacitor 33PF, 100V, 5, 1808, NPO Meritek capacitor 10V datasheet abstract |
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| Abstract: Voltage Designator 102 : 10 x 10^2 = 1000V 152 : 15 x 10^2 = 1500V 212 : 21 x 10^2 = 2100V 242 : 24 x 10^2 = 2400V 272 : 27 x 10^2 = 2700V 302 : 30 x 10^2 = 3000V 312 : 31 x 10^2 = 3100V 402 : 40 x 10^2 = 4000V DEVICE MARKING EXAMPLE : GTCA28-102M-P03 GTCA28-102M-P03 10 P 03 GN Week of Manufacture Per Raychem , : 1kA 03 : 3kA Product Family Voltage Designator 10x 10^2: 1000V Manufacturer Symbol PRODUCT , NUMBERING EXAMPLE: GT C A 2 8 - 102 M - P 03 Series GT : Gas Tube Packaging No Suffix: standard Tray ... | Original |
4 pages, |
GTCA28-302M-P01 GTCA28-402M-P01 GTCA28-102M-P03 datasheet abstract |
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| Abstract: : ± 10% L : ± 15% M : ± 20% Voltage Designator 102 : 10 x 10^2 = 1000V 152 : 15 x 10^2 = 1500V 212 : 21 x 10^2 = 2100V 242 : 24 x 10^2 = 2400V 272 : 27 x 10^2 = 2700V 302 : 30 x 10^2 = 3000V 312 : 31 x 10^2 = 3100V 402 : 40 x 10^2 = 4000V DEVICE MARKING EXAMPLE : GTCA28-102M-P03 GTCA28-102M-P03 10 P 03 , 11, 2008 PAGE NO.: 2 OF 5 PART NUMBERING EXAMPLE: GT C A 2 8 - 102 M - P 03 Series GT : Gas , 2004; N = week 14 Surge Rating: 01 : 1kA 03 : 3kA Product Family Voltage Designator 10x 10^2 ... | Original |
4 pages, |
GTCA28-402M-P01 gas tube crowbar 242M datasheet abstract |
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| Abstract: 102 1000V 202 2000V 302 3000V K 101 ST Series Soft Termination Multiplayer ... | Original |
4 pages, |
CAP 100NF 50V X7R 0805 Meritek ceramic capacitor datasheet abstract |
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| Abstract: FRED Diode BYP 102 q Soft recovery characteristics Type VRRM IFRMS trr Package 1) Ordering Code BYP 102 1000 V 50 A 130 ns TO-218 AD C67047-A2071-A2 C67047-A2071-A2 Maximum Ratings Parameter Symbol Mean forward current TC = 90 °C, D = 0.5 IFAV 28 RMS forward current IFRMS 50 Surge forward current Tj = 100 °C, 50-Hz sine halfwave, aperiodic IFSM 125 Repetitive peak forward current Tj = 100 °C, tp 10 us IFRM 280 i2t value ... | Original |
3 pages, |
C67047-A2071-A2 datasheet abstract |
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| Abstract: High Voltage NP0/C0G: Class I dielectric; ultra stable electrical characteristics over time, voltage, frequency and temperature changes. Low dielectric loss. SPECIFICATIONS: 0 ± 30PPM/ 30PPM/°C TEMPERATURE VOLTAGE COEFFICIENT: 0 ± 30PPM/ 30PPM/°C DISSIPATION FACTOR: 0.1% MAX. INSULATION RESISTANCE: >1000 ohms F or 100 G ohms, whichever is less at 25°C, VDCW. (The IR at 125°C is 10% of the value at 25°C) See below TEST PARAMETERS: 1MHZ ± 50KHZ 50KHZ at 1.0 ± 0.2 Vrms 100 ... | Original |
2 pages, |
EIA "J" code marking C1206 30PPM/ 50KHZ 30PPM/ abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| FRED Diodes Type V RR I FR t rr Package PDF Size Status BYP 100 1000 V 8 A 55 ns TO 218 AD 20 K 09.96 BYP 101 1000 V 25 A 80 ns TO 218 AD 26 K 12.96 BYP 102 1000 V 50 A 130 ns TO 218 AD 26 K 12.96 BYP 103 1000 V 75 A 140 ns TO 218 AD 26 K 12.96 BYP 300 1200 V 6.5 A 55 ns TO 218 AD 21 K 09 www.datasheetarchive.com/files/siemens/products/36/3613.htm |
Siemens | 27/02/1998 | 4.72 Kb | HTM | 3613.htm |
| FRED Diodes Type V RR I FR t rr Package PDF Size Status BYP 100 1000 V 8 A 55 ns TO 218 AD 20 K 09.96 BYP 101 1000 V 25 A 80 ns TO 218 AD 26 K 12.96 BYP 102 1000 V 50 A 130 ns TO 218 AD 26 K 12.96 BYP 103 1000 V 75 A 140 ns TO 218 AD 26 K 12.96 BYP 300 1200 V 6.5 A 55 ns TO 218 AD 21 K 09.96 BYP 301 www.datasheetarchive.com/files/infineon/products/36/3613.htm |
Infineon | 26/11/1998 | 4.76 Kb | HTM | 3613.htm |
| No Data Sheet Pack Power (W) R (Ohm) Tol (%) RTH22ES102J TM STD 0.5 1000 RTH22ES102K TM STD 0.5 1000 TG1.8.102J TG STD 0.3 1000 TG1.8.102K TG STD 0.3 1000 TM1.4.102J TM STD 0.5 1000 TM1.4.102K TM STD 0.5 1000 RTH42ES102J TG STD 0.3 1000 RTH42ES102K www.datasheetarchive.com/files/microsemi/products/sns/41_1000-v1.htm |
Microsemi | 07/12/1999 | 8.6 Kb | HTM | 41_1000-v1.htm |
| 100 - - - 8 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD - 55 ns - 1000 V No BYP 101 - - - 25 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD - 80 ns - 1000 V No BYP 102 - - - 50 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD - 130 ns - 1000 V No BYP 103 - - - 75 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD - 140 ns - 1000 V No BYP 300 - - - 6.5 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD - 55 ns - 1200 V No BYP 301 - - - 20 A P-TO-218-AD P-TO-218-AD P-TO-218-AD P-TO-218-AD www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~442.htm |
Infineon | 19/10/2000 | 18.13 Kb | HTM | para~442.htm |
| ST | N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET Datasheet N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET STW8NB100 STW8NB100 STW8NB100 STW8NB100 STW8NB100 STW8NB100 STW8NB100 STW8NB100 N - CHANNEL 1000V - 1.2 W - 8A - TO-247 PowerMESH ] MOSFET PRELIMINARY DATA n ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 k W ) 1000 V V GS Gate-source Voltage + 30 V I D www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6509.htm |
STMicroelectronics | 20/10/2000 | 9.22 Kb | HTM | 6509.htm |
| ST | N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET Datasheet N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET STW8 /03/1999 5 Raw Text Format STW8NB100 STW8NB100 STW8NB100 STW8NB100 N - CHANNEL 1000V - 1 Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 k W ) 1000 V V GS Gate-source Voltage + 30 V I D Drain Current www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6509-v3.htm |
STMicroelectronics | 25/05/2000 | 8.67 Kb | HTM | 6509-v3.htm |
| ST | N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET STW8NB100 STW8NB100 STW8NB100 STW8NB100 N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET Document Number: 6509 Date Update: 15 and Raw Text Format STW8NB100 STW8NB100 STW8NB100 STW8NB100 N - CHANNEL 1000V - 1.2 W - 8A - TO-247 PowerMESH ] MOSFET RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 k W ) 1000 V V GS Gate-source Voltage + 30 V I D Drain Current (continuous) at T c = 25 o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6509-v1.htm |
STMicroelectronics | 02/04/1999 | 6.85 Kb | HTM | 6509-v1.htm |
| ST | N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET STW8NB100 STW8NB100 STW8NB100 STW8NB100 N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET Document Number: 6509 Date Update: 15 and Raw Text Format STW8NB100 STW8NB100 STW8NB100 STW8NB100 N - CHANNEL 1000V - 1.2 W - 8A - TO-247 PowerMESH ] MOSFET RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 k W ) 1000 V V GS Gate-source Voltage + 30 V I D Drain Current (continuous) at T c = 25 o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6509-v2.htm |
STMicroelectronics | 14/06/1999 | 6.81 Kb | HTM | 6509-v2.htm |
| . Dielectric Withstanding Voltage: 1000V AC Insulation Resistance: 1000 M min. Physical Housing 5.49 (.216) 1.02 (.040) 4 4 52018-4445 4 4.48 (.176) 3.05 (.120) 6 2 52018-6245 4 5.49 (.216) 1.02 (.040) 6 4 52018-6445 4 4 52018-8245 4 6.99 (.275) 1.02 (.040) 8 4 52018-8445 4 5.98 (.235 www.datasheetarchive.com/files/molex/docs/00004/00404.htm |
Molex | 20/12/1997 | 5.22 Kb | HTM | 00404.htm |
| -255.3mV 0.000A NA NA 10.00V 0.000A NA NA | [Pulldown] | -5.000V -17.80mA NA NA 102.8mV 351.3uA NA NA www.datasheetarchive.com/files/on_semiconductor/simulation-models/mc14013bd.ibs |
On Semiconductor | 30/03/2009 | 5.63 Kb | IBS | mc14013bd.ibs |