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100UA

Catalog Datasheet MFG & Type PDF Document Tags

lm324 rtd application

Abstract: Current Mirror FET FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial
Burr-Brown
Original
lm324 rtd application Current Mirror FET 1N4148 AB-165A Lm324 window comparator REF200 SBVA001 SBVA006 SZZA015 SBOA018 SGLB002

lm324 and rtd interfacing

Abstract: Lm324 window comparator datasheet CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
lm324 and rtd interfacing Lm324 window comparator datasheet temperature sensor REF200 1N4689 AB-165 REF200AP
Abstract: FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial Burr-Brown
Original

Current source-100uA

Abstract: AB-165A CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
Current source-100uA lm324 triangle lm393 over lm324 and rtd lm324 current limiter

LM393 flame sensor

Abstract: AB-165A FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial
Burr-Brown
Original
LM393 flame sensor ref200Aue4 J109 Current source-200uA 2n5116

Burr-Brown IC free opa128

Abstract: op amp LM324 FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial
Burr-Brown
Original
Burr-Brown IC free opa128 op amp LM324

Current source-100uA

Abstract: LM324 FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial
Burr-Brown
Original
LM324
Abstract: CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chipâ'"two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually , Data Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA , "¦ nAp-p pA/âšHz 1 25 100 0.05 1.4 See Curves 5 1.005 pF I = 100µA Unless Otherwise Burr-Brown
Original

M93C46BN1

Abstract: M93S46RBN1 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/200µA 30mA/200µA 30mA/200µA 30mA/200µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA 30mA/100µA Temperature Range (°C
STMicroelectronics
Original
M2716-1F1 M93C46BN1 M93S46RBN1 200N1 ST24C04M1 PLCC32 512k M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1
Abstract: FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial Burr-Brown
Original

burr brown 3460

Abstract: LM324 FLOATING: No Power Supply or Ground Connections q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT , monolithic chip-two 100µA current sources and a current mirror. The sections are dielectrically isolated , laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA , available in plastic 8-pin mini-DIP and SOIC packages. I1 High 8 I2 High 7 Substrate 6 Mirror In 5 100µA 100µA 1 I1 Low 2 I2 Low 3 Mirror Common 4 Mirror Out International Airport Industrial
Burr-Brown
Original
burr brown 3460 LM393 switching power supply

lm324 and rtd

Abstract: AB-165 CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift Impedance
Burr-Brown
Original
LM393 1N4148 D-2 DIODE CHIP 1N4148 LM324 circuit DIAGRAM Siliconix JFETs Dual OPA602 OPA121 OPA1013 MAT03 INA105

LM393 flame sensor

Abstract: current mirror cascode CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
current mirror cascode INTEGRATED CIRCUITS LM393 PIN DETAILS LM324 COMPARATOR IC LM393 REF200AU 1N4148 discontinued

lm324 and rtd interfacing

Abstract: lm324 and rtd CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
information regarding diode 1N4148 MAT03 op 1n4148 analog constant current source rtd circuits diode 1N4148

lm324 rtd application

Abstract: LM324 14 PIN DIAGRAM texas CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
LM324 14 PIN DIAGRAM texas 1n4148 die

AB-165a

Abstract: Current source-100uA CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
SBVS020 amplifier lm393

Lm324 window comparator

Abstract: REF200AU CIRCUITRY q HIGH ACCURACY: 100µA ±0.5% q LOW TEMPERATURE COEFFICIENT: ±25ppm/°C q WIDE VOLTAGE , building-blocks on a single monolithic chip-two 100µA current sources and a current mirror. The sections are , currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any , Sheet. I1 High I2 High Substrate Mirror In 8 7 6 5 100µA 100µA 1 , See Curves 5 1.005 pF I = 100µA Unless Otherwise Noted Gain Temperature Drift
Burr-Brown
Original
DIODE 1N4148 .07V transistor 2N4340 bourns sensor

MTS102

Abstract: temperature sensor REF200 contains a collection of circuits to address a variety of applications. 4.5V to 36V REF200 100µA 100µA R2 A1 THE DIODE Just about any silicon diode can be used as a temperature measurement , . Since the MTS102 is specified for 100µA operation, the Burr-Brown REF200 Dual 100µA Current Source , shows the simplest diode-based temperature measurement system. One of the 100µA current sources in the , R1 Motorola MTS102 VO = VBE (1 + R2/R1) ­ 100µA · R2 Where: VBE = voltage across diode (V
Burr-Brown
Original
BE25 9717K AB-036 OPA177 VBE25

MTS102

Abstract: temperature sensor REF200 contains a collection of circuits to address a variety of applications. 4.5V to 36V REF200 100µA 100µA R2 A1 THE DIODE Just about any silicon diode can be used as a temperature measurement , . Since the MTS102 is specified for 100µA operation, the Burr-Brown REF200 Dual 100µA Current Source , shows the simplest diode-based temperature measurement system. One of the 100µA current sources in the , OPA1013 R1 Motorola MTS102 VO = VBE (1 + R2/R1) ­ 100µA · R2 Where: VBE = voltage across diode
Burr-Brown
Original
MTS102 datasheet AS5V 100k dual pot SBOA019

FAN4040

Abstract: TCVR Breakdown Voltage Long-term Stability Conditions IK = 100µA IK = 100µA IK = 1mA IRMIN IK 1mA 1mA IK 15mA 1mA IK 25mA IK=1mA, f=120Hz, IAC=0.1IK IK=100µA, 10Hz f 10kHz t=1000hrs, T=25°C, IK=100µA Limits A B C D 2.500 2.500 2.500 2.500 ±2.5 ±5.0 ±12 ±25 · ±19 ±21 ±29 ±49 · , Breakdown Voltage Long-term Stability Conditions IK = 100µA IK = 100µA IK = 1mA IRMIN IK 1mA 1mA IK 15mA 1mA IK 25mA IK=1mA, f=120Hz, IAC=0.1IK IK=100µA, 10Hz f 10kHz t=1000hrs, T
Fairchild Semiconductor
Original
FAN4040 TCVR FAN4040DIS325X DS30004040
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