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1 - 50 of about 485 for 1000-125 |
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First line: 1S420 1S411 Metal Case Stud-mounted Rectifiers Average Rectified Forward Current Single Max. Device stud Cycle P.I.V. Special Case 100=C VRWM Surge Features 1S410 S010 1S411 S010 Abstract: .. 1S425 1S425 S010 S010 10 6.5 4 600 125 _ 1S427 1S427 S010 S010 10 6.5 4 800 125 — V nWIVl 1S429 1S429 S010 S010 10 6.5 4 1000 125 — 1S429 1S429 /R S010 S010 10 6.5 4 1000 125 — J l:l. ~ TEXAS INSTRUMENTS. Discrete Semiconductors. Metal Case Stud-mounted .. Tags: 1S411 1S420 datasheet abstract.. |
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First line: RIFA Y2 PZB300MC23R30 rifa x2 PZB300 Delta suppressor, classes metallized paper 0.15 2200, 3300 4700 VAC, +100 Class Compact size Self-extinguishing encapsulation. mounting fast-on connection Excellent self-healing properties. Ensures long life even when subjected frequent overvoltages. High dU/dt c Abstract: .. 0.10 2200 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 √ √ √PZB300MC11R30 PZB300MC11R30 . 0.10 3300 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 √ √ √PZB300MC12R30 PZB300MC12R30 . 0.10 4700 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 .. Tags: rifa x2 RIFA Y2 Y2 capacitor "2200" rifa PZB300MC23R30 pzb300mc13r30 pzb300mc 40/100/56/b PZB300 |
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First line: PZB300MC13 PZB300 Delta suppressor, classes metallized paper 0.15 2200, 3300 4700 VAC, +100 Class Compact size Self-extinguishing encapsulation. mounting fast-on connection Excellent self-healing properties. Ensures long life even when subjected frequent overvoltages. High dU/dt capability. Good res Abstract: .. 0.10 2200 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 √ √ √PZB300MC11 PZB300MC11 . 0.10 3300 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 √ √ √PZB300MC12 PZB300MC12 . 0.10 4700 12.5 16.0 24.0 20.0 150 1000 125 7.5 600 1000 √ √ √PZB300MC13 PZB300MC13 .. Tags: Y2 capacitor "2200" RIFA Y2 Rifa Integrated Circuits rifa 40/100 rifa PZB300MC23 PZB300MC21 PZB300MC13 article 40/100/56/b 1000-125 PZB300 |
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First line: M52 datasheet Half-Full-Controlled Bridge Single Phase Controlled Bridge Modules With Free Wheeling Diode Electrical Characteristics Type S1PHB15-08 S1PHB15-12 S1PHB15-14 S1PHB15-16 S1PHB15-18 S1PHB28-08 S1PHB28-12 S1PHB28-14 S1PHB28-16 S1PHB28-18 S1PHB36-08 S1PHB36-12 S1PHB36-14 S1PHB36-16 S1PHB36- Abstract: .. 70 85 550 0.85 11 1000 125 0.9 M52. 800. 1200. 1400. 1600. 1800. S3PFB70G08 S3PFB70G08 . S3PFB70G12 S3PFB70G12 . S3PFB70G14 S3PFB70G14 .. 70 85 550 0.85 11 1000 125 0.9 M52. 800. 1200. 1400. 1600. 1800. Type. Electrical Characteristics. V .. Tags: M52 datasheet datasheet abstract.. |
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First line: m500* 2N3495 2N3634 MOTOROLA 2N3501 MOTOROLA MM4003 METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each pac Abstract: .. 250 0.5 150 15 30 50 2N5679 2N5679 100 1000 40 250 0.6 250 25 30 100 2N4236 2N4236 80 3000 30 250 0.6 1000 125 3 100 2 N 4036 65 1000 40 150 0.65 150 15 60 50 M M5005 M5005 60 2000 50 150 0.5 150 15 30 50 2N4235 2N4235 60 3000 30 250 0.6 1000 125 .. Tags: MM4003 2N3501 MOTOROLA 2N3634 MOTOROLA 2N3495 m500* datasheet abstract.. |
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First line: NSDU57 NSDU57* NSD206 NATL SEMICOND (DISCRETE) Medium Power Transistors Ascending Vceo (Continued) Part Vceo lC/Vce (mA/V) (sat) lc/lb (mA)/(mA) Package 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11 D43C12 NSD204 NSD205 NSDU56 TN4033 TN4236 250/1.0 250/2 250/1 350/2 500/2 250/1 1A/2 Abstract: .. /5 100/5 500/1 100/5 250/1 0.6 0.5 0.35 0.35 0.5 0.35 1.0 0.5 0.5 0.5 0.5 0.5 0.35 0.5 1000/125 250 350 500 250 1000 1000 1000 1000 500 500 250 500 1000 TO-39 TO-39 TO-237 TO-237 TO-237 TO-237 TO-237 TO-237 TO-237 TO-237 TO-237 TO-237 TO-202 TO-202 .. Tags: NSD206 NSDU57* NSDU57 datasheet abstract.. |
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First line: Resonator 1000 MODEL NO.: TC0528A FEATURES: 1-Port Resonator. MAXIMUM RATING: 1.Input Power Level: 2.DC voltage: 3.Operating Temperature: -40°C +85°C 4.Storage Temperature: -40°C +85°C ELECTRICAL CHARACTERISTICS: Characteristic Units Center frequency Insertion Loss Equivalent Element Abstract: .. Center frequency Fr MHz 1000.875 1000.000 1000.125. Insertion Loss IL dB - 1.30 2.0. Equivalent Elements. Motional capacitance C1 fF - 1.66 -. Motional inductance L1 μH - 15.3 -. Motional resistance .. Tags: TC0528A |
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First line: 1000.0MHz Resonator Part MA09355 FEATURES: 1-Port Resonator. MAXIMUM RATING: 1.Input Power Level: 2.DC voltage: 3.Operating Temperature: -40°C +85°C 4.Storage Temperature: -40°C +85°C ELECTRICAL CHARACTERISTICS: Characteristic Center frequency Insertion Loss Equivalent Elements Motio Abstract: .. Center frequency Fr MHz 999.875 1000 1000.125. Insertion Loss IL dB - 1.5 2.0. Equivalent Elements. Motional capacitance C1 fF - 0.969 -. Motional inductance L1 μH - 26.13 -. Motional resistance R1 Ohm .. Tags: MA09355 |
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First line: ,000 ,500 1,000 S_fr S_fr PASTERNACK PE203 Abstract: .. 11 1000 .125 2 THRU 4 HOLES ,500. 1. 2. 3. 4. PASTERNACK PE2043 PE2043 . 1.610. IN ,735 TYP, ,625-24 UNEF -2A - .. Tags: datasheet abstract.. |
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First line: skt 450 semikron skt 900 Semikron SKR 40 /12 semikron skt 600 SKR.* Section SEMICELL® Power Semiconductor Chips following tables contain standard types. Other types selections available special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips Types Abstract: .. 16 0,9 300 2,4 75 1,0 20 1000 125 3 100 0,25 3. SKT-GSW 7 Q1/.. 25 0,95 400 1,8 75 1,0 10 1000 125 3 100 0,25 3. SKT-GSW 8,9Q1/.. 45 0,60 1000 1,8 120 1,1 5 1000 125 3 150 0,25 5. SKT-GSW 10,3Q1/.. 50 0,60 1250 .. Tags: SKR.* semikron skt 600 Semikron SKR 40 /12 semikron skt 900 skt 450 thyristor silicon chips skt 45 semikron skt datasheet abstract.. |
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First line: S6430D Product Matrix (continued) SCR's TO-220AB Pre- fllU, Stud Isolated Stud <TIRMS) 12.5 lTSM 200A 200A 350A 200A 350A 200A 350A 200A Vrmnu VrromIVI 2N6400 N3668 2N6401 S6200A 2N3870 S6210A 2N3896 S6220A S6420A S6230A S6430A Abstract: .. DD 100 -40 to 25 200 3 1000 — 125 200 25 0.4 TAS8612B TAS8612B 75 750 80 DD 200 -40 to 25 200 3 1000 - 125 200 25 0.4 TAS8612D TAS8612D 75 750 80 DD 400 -40 to 25 200 3 1000 - - 225 200 25 0.4 TAS8612M TAS8612M 75 750 80 DD 600 -40 to 25 200 3 1000 .. Tags: S6430D datasheet abstract.. |
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First line: SCR's (continued) Current Voltage Max, Gate Trigger Critical Rate Rise Thermal Package vDROM Temp. Range Characteristic Off-State Voltage Max. Instantaneous Resistance TYPE (RMS) "TSM Temp., (See VRRC)M Operating 'GT dv/dt V/ms Holding Current R0JC Min. Typ. 'HO-mA GENERAL-PURPOSE SCR's (contin Abstract: .. DD 100 -40 to 25 200 3 1000 — 125 200 25 0.4 TAS8612B TAS8612B 75 750 80 DD 200 -40 to 25 200 3 1000 - 125 200 25 0.4 TAS8612D TAS8612D 75 750 80 DD 400 -40 to 25 200 3 1000 - - 225 200 25 0.4 TAS8612M TAS8612M 75 750 80 DD 600 -40 to 25 200 3 1000 .. Tags: datasheet abstract.. |
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First line: acr22* MARCONI TECHNOLOGY 5763442 000175b T'^-21 FAST SWITCHING ASYM Serias Type Silicon Diameter Repetitive Peak Voltage Range Non-Repetltlve Peak Voltage Rangri Peak Off-state Reverse Mean On-state Current Surge Current Max. VRRM Fusing Max. 10ms Value On-state Voltage Peak Current Virtual Junctlo Abstract: .. THYRISTORS DCR845 DCR845 38.0 1200-2000 1300-2100 50 605 8.5 361 1.85 1000 125 0 DCR849 DCR849 38.0 1200-2000 1300-2100 50 545 8.0 320 2.10 1000 125 0 DCR853 DCR853 38.0 400-1200 500-1300 50 655 13.0 845 1.50 1000 125 .. Tags: acr22* datasheet abstract.. |
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First line: Three 'hase Ultrc ]fast Bride Seri 2-PLCS. Abstract: .. - Volts Figure 2 Typical Reverse Leakage Current - Per Leg 800 Series "PSiiSI 1000 125 100 75 50 25 0 % of Rated Voltage Figure 3 Current Derating 50 o o -Â 25 Â o \ V \ \ fi QO Sei ies \ S V 801 S ;ries 50 100 .. Tags: datasheet abstract.. |
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First line: Issued Date: Product Name: Resonator 1000 3.8X3.8 Parts No.: TC0306A Customer Parts No.: Abstract: .. Center frequency Fr MHz 999.875 1000 1000.125. Insertion Loss IL dB - 1.5 2.0. Equivalent Elements. Motional capacitance C1 fF - 0.969 -. Motional inductance L1 μH - 26.13 -. Motional resistance R1 Ohm .. Tags: 1000-125 TC0306A |
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First line: B0815* B0815 bd817 TO-202 PLASTIC PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type vcbo Veco vebo 'cbo (PA) (mA) VCE(Sa9 VBE(Sal) (mA) (MHz) (mA) CDIL Cass Style 2SC2068 20.0 TO-202 2SC20680 20.0 TO-202 2SC2068R 20.0 TO-202 2SC2068Y 20.0 TO-202 Abstract: .. 500.0 2 2 2 0.5 500 250 50 TO-202 TO-202 BD843 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO-202 TO-202 CSC1212A CSC1212A 80 80 5.0 5.0 50 60 20 200 50.0 1000.0 4 4 1.5 1000 30 100 160 30 TO-202 TO-202 BD81S BD81S 60 60 5.0 40 40 250 150 .. Tags: bd817 B0815 B0815* datasheet abstract.. |
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First line: B0815* B0815 bd817 TO-202 PLASTIC PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type VCBO Veco VEBO 'CBO (PA) (mA) VCE(Sa9 VBE(Sal) (mA) (MHz) (mA) CDIL Cass Style 2SC2068 20.0 TO-202 2SC20680 20.0 TO-202 2SC2068R 20.0 TO-202 2SC2068Y 20.0 TO-202 Abstract: .. 500.0 2 2 2 0.5 500 250 50 TO-202 TO-202 BD843 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO-202 TO-202 CSC1212A CSC1212A 80 80 5.0 5.0 50 60 20 200 50.0 1000.0 4 4 1.5 1000 30 100 160 30 TO-202 TO-202 BD81S BD81S 60 60 5.0 40 40 250 150 .. Tags: bd817 B0815 B0815* datasheet abstract.. |
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First line: transistor 2N4033 CV9507 METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each package type. V(BR)CEO (sat) D Abstract: .. 250 0.5 150 15 30 50 2N5679 2N5679 100 1000 40 250 0.6 250 25 30 100 2N4236 2N4236 80 3000 30 250 0.6 1000 125 3 100 2 N 4036 65 1000 40 150 0.65 150 15 60 50 M M5005 M5005 60 2000 50 150 0.5 150 15 30 50 2N4235 2N4235 60 3000 30 250 0.6 1000 125 .. Tags: CV9507 transistor 2N4033 datasheet abstract.. |
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First line: Center Doubler Assemblies Ultrafast Recovery Series DIA. 2-PLCS." "T1" TLjH_G MARKING: Alternating Current Input: Cathode Positive Output: Anode Negative: -Part Number printed body Abstract: .. 6 .8 1 1.2 1.4 Instantaneous Forward Voltage - Volts 0.1 I 1.0 M c D 10 o a en 1100 1000 125 100 75 50 25 0 % of Rated Voltage Figure 2 Typical Reverse Leakage Current - .01 Per Leg 06-01-07 Rev. 3 Center .. Tags: datasheet abstract.. |
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First line: Single Phase ANTX JANTXV I-69 Rectifier Terminals tinned. Polarity shall marked adjacent terminals. Terminal shall indicated mechanical index visible from top. Point which^C read shall metal base shown, Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes .367 .375 9.32 9.53 .350 .450 8.89 1 Abstract: .. 100 150 200 Case Temperature - C Figure 2 Typical Reverse Leakage Current - Per Leg 1000 125 100 75 50 25 0 % of Rated Voltage 11-22-05 Rev. 2 10 Amp Single Phase Bridge Rectifiers. JAN, JANTX & JANTXV .. Tags: datasheet abstract.. |
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First line: Single Phase Bridge Rectifiers 469-1 469-3 METAL CASE ENCAPSULATION MATERIAL TERMINAL POLARITY Abstract: .. 50 100 150 Case Temperature - C Figure 2 Typical Reverse Leakage Current - Per Leg 1000 125 100 75 50 25 % of Rated Voltage 4-6-05 Rev. 10 Amp Single Phase Bridge Rectifiers. 469-1 to 469-3 ENCAPSULAllON .. Tags: datasheet abstract.. |
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First line: circ-o-gideTM Snap-In Button-Style Card Guides Standard configurations Precision Molded rigidity, strength heat resistance from 94V-O rated materials Improves system cooling Supports spacing, length thickness CIRC-O-GIDEs provide ultimate design flexibility installed reliability eliminating continuo Abstract: .. 1000-125 1.00 25.4 .125 3.2 .924 23.5 K. 1000-156 1.00 25.4 .156 4.0 .924 23.5 K. 1000-187 1.00 25.4 .187 4.8 .924 23.5 K. *Spacing for 1/16" 1.6 PCBs. Circ-O-Gide Circ-O-Gide .. Tags: 750-187 750-109 312-109 1000-156 datasheet abstract.. |
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First line: 2N3546 Metal Small-Signal Transistors Motorola Small-Signal Metal Transistors designed General-Purpose Amplifiers, High-Speed Switches, High-Voltage Amplifiers, Low-Level/ Low-Noise Amplifiers, High-Frequency Oscillators, Choppers, Darlingtons. These devices manufactured variety packages, i.e., TO-1 Abstract: .. 250 0.5 150 15 30 50 2N5679 2N5679 100 1000 40 250 0.6 250 25 30 100 2N4236 2N4236 80 3000 30 250 0.6 1000 125 3 100 2 N 4036 65 1000 40 150 0.65 150 15 60 50 M M5005 M5005 60 2000 50 150 0.5 150 15 30 50 2N4235 2N4235 60 3000 30 250 0.6 1000 125 .. Tags: 2N3546 datasheet abstract.. |
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First line: transistor 2N4033 METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each package type. V(BR)CEO (sat) Device V Abstract: .. 250 0.5 150 15 30 50 2N5679 2N5679 100 1000 40 250 0.6 250 25 30 100 2N4236 2N4236 80 3000 30 250 0.6 1000 125 3 100 2 N 4036 65 1000 40 150 0.65 150 15 60 50 M M5005 M5005 60 2000 50 150 0.5 150 15 30 50 2N4235 2N4235 60 3000 30 250 0.6 1000 125 .. Tags: transistor 2N4033 datasheet abstract.. |
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First line: APPROVED Abstract: .. 1000-125. 1000-187. 800-187. 1000-109. 1000-078. .324 8.2 .324 8.2 .324 8.2 .236 6.0 .236 .. Tags: datasheet abstract.. |
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First line: HERRNANN 443b57S QQQ0CH3 HRMN Schnelle Dioden Fast Switching Diodes Diodes rapides Diodentyp Type diode Type diode Vrrm 'favm 'frms 'fsm V'f V(TO, di/dt A/jus ^VJM thJC Fig. TVJM 170/07-6 1200 1500 2320 27000 2/300 1,36 1,36 0,11 235/07 1200 1500 5000 125000 2,05/600 1,46 0,72 1000 0,08 240/11 1100 Abstract: .. 28 HDS 350/20 - 6 22 25 2000 2200 2500 — 1350 8700 380000 150 2,1/1200 1,25 0,48 — 100 1000 125 0,04  250 28 HDS 890/20 - 6 22 25 2000 2200 2500 — 3000 25000 3125000 300 2,1/3600 1,12 0,21 — 100 1000 .. Tags: datasheet abstract.. |
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First line: SPB16035 SPB16045 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes 1.494 0.976 0.472 0.990 1.049 0.164 0.080 0.372 1.504 0.986 0.480 1.000 1.059 0.174 0.084 0.378 37.95 24.79 12.00 25.15 26.67 4.16 2.03 9.45 38.20 25.04 12.24 25.40 26.90 4.42 2.13 9.60 160A Schottky Barrier Rectifier Abstract: .. 1000 125 C. 10. 100. 10000. Figure 2. 0. 10. .2. 20. 40. .4 .6 .8 1.0 1.2 1.4. 6000. 600. 60. 80. 100. 200. 400. 2000. 1000. 800 .. Tags: SPB16035 SPB16045 |
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First line: CPT60135 CPT60145 Baseplate A=Common Anode Baseplate Common Cathode Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Schottky PowerMod Dim. Inches Min. Abstract: .. 1000 125 C. 10000. 150 C. 10. Figure 2. 0 0.4 0.2 1.0 0.8 1.2 1.4. 25 C 150 C. 100. 1000. Typical Forward .. Tags: CPT60135 CPT60145 |
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First line: NATL SEMICOND (DISCRETE) faSGUBO 0G377fl7 T-21-0t Medium Power Transistors Ascending Vceo Vceo Ic/Vc (sat) >c/lb Dart (mAl/liriA) Package rivi (mA/V) 2N6726 10/1 1000 TO-237 92PU51 100/1 TO-237 Abstract: .. 0 0.6 1000/125 TO-39 TO-39 2N6727 2N6727 40 55 10/1 0.5 1000 TO-237 TO-237 92PU51A 92PU51A 40 60 100/1 0.5 1A TO-237 TO-237 NSDU51A NSDU51A 40 50 1A/1 0.7 1000 TO-202 TO-202 NSDU52 NSDU52 40 50 300 150/10 0.4 150 T0-202 T0-202 NSE170 NSE170 40 50 250 100/1 0.3 500 TO-202 TO-202 .. Tags: datasheet abstract.. |
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First line: scr 300 amps DIODE CAPSULES CAPSULES Diode Capsules Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm (volts) 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500 2800-3500 1500-2600 2500-3000 1400-2000 Abstract: .. T52P800S T52P800S 4000-4500 800 70 9000 330 75 2.00 1000 125 150 1000 150/3 500 * 400 5500 0.025 91. T52P950S T52P950S 3500-4000 950 70 16000 1000 75 1.60 1000 125 150 1000 150/3 500 * 400 5500 0.025 91. T52P1000S T52P1000S 2200-3200 .. Tags: scr 300 amps KA2s |
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First line: ESM thyristor ESM thyristor SGS-THOMSON GENERAL PURPOSE INDUSTRIAL HIGH POWER RECTIFIER DIODES THYRISTORS FAST RECOVERY RECTIFIER DIODES Type VRRM Tcase 'fsm (j-c) note Package <mC) SV11. F(R) 2000 1.26 0.23 12-15 Abstract: .. 10 % 1 ESM 4116 3 200— 600 125 300 65 4500 1.25 1 4 0.08 5  10 % or ESM 4120 3 600—1000 125 300 65 4500 1.25 1 13 0.08 5  10 % MU 86 DFS 454 200—2500 150 320 80 3500 1.64 1.54 200 0.07 5  10 % 1 DFS .. Tags: ESM thyristor ESM thyristor datasheet abstract.. |
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First line: Series A-,'1- \\ Abstract: .. Forward Voltage - Volts Figure 2 Typical Reverse Leakage Current - Per Leg 802 Series 1000 125 100 75 50 25 % of Rated Voltage Figure 3 Current Derating 50 o o  t ;25 t 3 o \ \ 8 [ Sei  es \ V \ 803 S eries .. Tags: datasheet abstract.. |
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First line: Application Information (continued) Current 'T(RMS)a Voltage Range Package Series Typical Applications LOW-CURRENT SENSITIVE-GATE 15-600 TO-220AB (VERSAWATT) S2060 S2061 S2062 Logic Interface Power Control GENERAL PURPOSE PHASE CONTROL 200-600 TO-8 2N4102 Fuel Igniters 200-600 Mod. TO-5 Rad. S2610 I Abstract: .. DD 100 -40 to 25 200 3 1000 — 125 200 25 0.4 TAS8612B TAS8612B 75 750 80 DD 200 -40 to 25 200 3 1000 - 125 200 25 0.4 TAS8612D TAS8612D 75 750 80 DD 400 -40 to 25 200 3 1000 - - 225 200 25 0.4 TAS8612M TAS8612M 75 750 80 DD 600 -40 to 25 200 3 1000 .. Tags: datasheet abstract.. |
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First line: -se- VRSM Vrrm itcav) Itsm di/dt Pgcav) vgrm Igfh Tstg IRRM 1DRM (50H/W (A2S) (V/jUs) (mA) FT1500DL-20 1200 1000 1500. 25000* 2600000 1/2VDRM 80.0 FT1500DL-24 1350 1200 1500. 25000* 2600000 1/2VDRM 3.00 Abstract: .. 5 250.00 25$ 0.20 125 1/2VDRM 1000 125 1/2 VDRM 0.0100 M-19 M-19 FT2500BH-32 FT2500BH-32 2.20 125 8000 3. 5 250.00 25$ 0.20 125 1/2VDRM 1000 125 1/2 VDRM 0.0100 M-19 M-19 FT2500BH-36 FT2500BH-36 2.20 125 8000 3.5 250.00 25$ 0.20 125 .. Tags: datasheet abstract.. |
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First line: 11802 Polypropylene Film Foil Capacitors Axial Epoxy Lacquered Type Abstract: .. 1000 125. 62 000 1.8 76203. 86203. PACKAGING TAPE DISTANCE mm Taped in ammopack 52.5. 63.5. Taped on .. 1000 125 7500 1.2 77502. 87502. 8200 1.3. 78202. 88202. PACKAGING TAPE DISTANCE mm Taped in .. Tags: 11802 transistor 13002 71803 ma 8910* 2222 463 88201 77509 76801 74301 16801 13002 datasheet abstract.. |
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First line: transistor 13002 Polypropylene Film Foil Capacitors Axial Epoxy Lacquered Type Abstract: .. 1000 125 7500 1.2 77502 87502. 8200 1.3 78202 88202. PACKAGING TAPE DISTANCE mm Taped in ammopack 52.5. 63.5. Taped on reel 52.5. www.vishay.com For technical questions contact: filmcaps.roeselare .. Tags: transistor 13002 ma 8910* KP AXIAL EPOXY LACQUERED TYPES 83303 77509 76801 74303 74301 73302 72203 72002 71602* datasheet abstract.. |
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First line: 71803 Polypropylene Film Foil Capacitors Axial Epoxy Lacquered Type Abstract: .. 1000 125. 62 000 1.8 76203. 86203. PACKAGING TAPE DISTANCE mm Taped in ammopack 52.5. 63.5. Taped on .. 1000 125 7500 1.2 77502. 87502. 8200 1.3. 78202. 88202. PACKAGING TAPE DISTANCE mm Taped in .. Tags: 71803 transistor 13002 74701 Transistor AC 51 75609 K V 63 8180* 77509 2222 460 13002 datasheet abstract.. |
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First line: 750TL MEDIUM-MU TRIODE MODULATOR OSCILLATOR FIER EITEL-McCULLOUGH, bruno, california GENERAL CHARACTERISTICS Filament: Thoriated tungsten Voltage.-.- volts Current.------- 21.0 amperes Abstract: .. 10000 1000 125 750 ma. volts watts watts watts volts watts GRID VOLTAGE-VOLTS 5 m < o  CD m < o q 0 750TL- 750TL- DRIYING POWER vs. POWER OUTPUT The three charts on this page show the relationship of plate .. Tags: 750TL datasheet abstract.. |
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First line: Features Standard Models (continued) Model Number Centre Frequency (MHz) Freq Ports (kHz) Package GSRS Abstract: .. TC0528A TC0528A 1000 125 1 3.1x3.1. TC0306A TC0306A 1000 125 1 3.9x3.9. TC0337A TC0337A 1000 50 1 3.9x3.9. TC0539A TC0539A 1008 50 1 3.9x3.9. TD0116A TD0116A 1090 200 2 3.9x3.9. Tel: +44 1460 256 100 Fax: +44 1460 256 101 E-mail: sales@golledge .. Tags: datasheet abstract.. |
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First line: -83- Vrsm Vrrm Ifsm VFmax Umax If(A) TCC) Vr(V) TCC) sr30b-12 100c lOiA sr30b-14 100c 10mA sr30b-16 100c 10mA Abstract: .. 55 50 25c 10mA 10mA 1000 125] 616 SR30C-20S SR30C-20S HS 1200 1000 800 30 74c 500 1. 55 50 25c 10mA 10mA 1000 125] SR30C-2S SR30C-2S à ̈ià ̄ffitt 616 SR30C-2R SR30C-2R hs 200 100 80 30 74c 500 1. 55 50 25c 10mA 10mA 100 125] 616 SR30C-2S SR30C-2S hs 200 100 .. Tags: datasheet abstract.. |
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First line: KBPC02* kbh 2502 SILICON SINGLE PHASE BRIDGE PONTS REDRESSEMENT SILICIUM MONOPHASES SI-BRUCKENGLEICHRICHTER KBPC1 Toper SERIES (CASE 106) KBPC1005 KBPC102 KBPC KBPC106 KBPC KBPC Abstract: .. + 125 Â C KBPC 6005 KBPC 602 KBPC 604 KBPC 606 KBPC 608 KBPC 610 50 200 400 600 800 1000 125 125 125 125 125 125 1.0Â 1.0Â 1.0Â 1.0Â 1.0Â 1.0Â 3.0 A 3.0 A 3.0 A 3.0 A 3.0 A 3.0 A 10 10 10 10 10 10 KBPC 8 .. Tags: kbh 2502 KBPC02* datasheet abstract.. |
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First line: 1N5712 JANTX 1N5711-1 AVAILABLE JAN, JANTX JANTXV 1N5712-1 AVAILABLE JAN, JANTX JANTXV SCHOTTKY BARRIER DIODES HERMETICALLY SEALED METALLURGICALLY BONDED (-1) DOUBLE PLUG CONSTRUCTION 1N5711 1N5711-1 1N5712-1 DSB5712 DSB2810 Abstract: .. 1000 125. 100. w. W <fl. ~ <fl u; w a: z. 100. > w I. w. 0: 0: . !: 10. Y o 10. -. I-----' ~ _25 1. ::E <t Z. 10. ~ I. ;A {' CJ .. Tags: 1N5712 JANTX datasheet abstract.. |
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First line: BAX17* IR 30 D1 BAX17 NATL SEMICOND DISCRETE High Voltage Diodes (Glass Package) fcSQ1130^ 00370G2 T-01-01 Device Package Vrrm Test Cond. Proc. 1N625 DO-35 1000 1000 (Note 1N626 DO-35 1000 1000 (Note!) 1N627 DO-35 1000 1000 (Note 1N628 DO-35 1000 1000 (Note 1N629 DO-35 1000 1000 (Note 1N658 DO-35 (N Abstract: .. D1 1N627 1N627 DO-35 DO-35 100 1000 75 1.5 4.0 1000 Note 1 D1 1N628 1N628 DO-35 DO-35 150 1000 125 1.5 4.0 1000 Note 1 D1 1N629 1N629 DO-35 DO-35 200 1000 175 1.5 4.0 1000 Note 1 D1 1N658 1N658 DO-35 DO-35 120 50 50 1.0 100 300 Note 2 D1 1N659 1N659 DO .. Tags: BAX17 IR 30 D1 BAX17* datasheet abstract.. |
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First line: 1N5711UR-1 AVAILABLE JAN. JANTX JANTXV 1N5712UR-1 AVAILABLE JAN. JANTX JANTXV SCHOTTKY BARRIER DIODES LEADLESS PACKAGE SURFACE MOUNT METALLURGICALLY BONDED. DOUBLE PLUG CONSTRUCTION (-1) 1N5711UR-1 1N5712UR-1 CDLL5711 CDLL5712 CDLL2810 CDLL6263 Operating Temperature: Storage Temperature: Operating C Abstract: .. 1000 125. Y. -,..-- too. ~ 0. w 100. => 1000. o. ~ U. => w. ~ .5. i fi: ..!!I. / .1 .05. ~tt:tAf:l-r==r~i--+--i .. Tags: datasheet abstract.. |
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First line: Product Qualification Rport Part Numbr: SKY65111-348LF Packag Typ: MLQP (3.0 Rport 301028 Qualification Abstract: .. 4.61 77 1000 125 1.3. Parameters used in the Failure Rate Equation. Failure Rate = χ χ χ χ2 X 10 9 FITS 2N * t * At. where: χ χ χ χ2 = Chi Square Factor w/ corresponding degrees of freedom and confidence .. Tags: SKY65111-348LF |
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First line: S2A01R* S2A15R* S2A10R TOTAL POWER INT'L S2A00R Series Watt Cost DC/DC Converters Single Dual Output Features Cost Regulated Outputs 40mV Ripple Noise Isolation 500VDC Short Circuit Protected MTBF 600,000 Hours +Vin Filter -Vin Bipolar Push-Pull Inverter Abstract: .. 60 1000 {125 {12 S2A04R S2A04R . 62 960 200 15 S2A03R S2A03R . 62 960 250 12 S2A02R S2A02R . 60. 100 100. 1000. 0. 600 5. 5. 4.5 ~ 5.5 S2A01R S2A01R . Efficiency. % Typ. Reflected Ripple Current mA Typ. Input Current No Load mA Typ. Input .. Tags: S2A10R S2A01R* S2A15R* S2A11R S2A04R S2A01R datasheet abstract.. |
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First line: BRIDGE RECTIFIERS, Standard Recovery, Plastic Package Part Number PB61 PB62 PB64 PB66 PB68 PB610 Maximum Average Rectified Current Peak Voltage (VlltM Abstract: .. €” Hole For #6 Screw MB 80 5 MB81 MB81 MB82 MB82 MB84 MB84 MB86 MB86 MB88 MB88 MB810 MB810 8.0 75 50 100 200 400 600 800 1000 125 1.0 4.0 5.0 200 MB10Q5 MB10Q5 MB101 MB101 MBt02 MBt02 MB104 MB104 MB 106 MB 108 MB1010 MB1010 MB1505 MB1505 MB151 MB151 MB152 MB152 MB154 MB154 MB 156 MB 158 MB151 MB151 Ã .. Tags: datasheet abstract.. |
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First line: Samsung Proprietary 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM Shippin Abstract: .. NDRAM 22-SMART 22-SMART MEDIA-1828 MEDIA-1828 1000 125*8 4 125 1Pack NDRAM 22-SMART 22-SMART MEDIA-2836 MEDIA-2836 1000 125*8 4 125 1Pack NDRAM 22-SMART 22-SMART MEDIA-3628 MEDIA-3628 1000 125*8 4 125 1Pack NDRAM 22-SMART 22-SMART MEDIA-3628-FUJI MEDIA-3628-FUJI .. Tags: datasheet abstract.. |
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First line: microswitch bussmann Square Body US-Style 1000V (IEC) 50-400A Abstract: .. 1000 125 1450 8600 40 170M3535 170M3535 Page 74. 1* 1000 160 2850 17500 45 170M3536 170M3536 2 0.85 or. 1000 200 4950 29500 48 170M3537 170M3537 720093 1000 250 9550 57000 50 170M3538 170M3538 . 1000 315 21500 130000 60 170M3539 170M3539 . 1000 350 .. Tags: zilox* microswitch bussmann microswitch* bussmann zilox 170m bussmann typower 29000 datasheet abstract.. |
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First line: microswitch bussmann bussmann zilox 170m Square Body 1000V (IEC/U.L.) 50-400A Abstract: .. 1000 125 1450 8600 40 170M3969 170M3969 170M3985 170M3985 Page 74. 1* 1000 160 2850 17500 45 170M3970 170M3970 170M3986 170M3986 6 2.7 or. 1000 200 4950 29500 48 170M3971 170M3971 170M3987 170M3987 720058 1000 250 9550 57000 50 170M3972 170M3972 170M3988 170M3988 . 1000 .. Tags: zilox* microswitch bussmann microswitch* bussmann zilox 170m bussmann typower datasheet abstract.. |
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