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| Part Number | Manufacturer | Description | ||||||
| 1. |  10GWJ2CZ47C |
EIC Semiconductor, Inc. | Schottky Barrier Rectifiers | Latest Datasheet | ||||
| 2. | 10GWJ2CZ47C |
Toshiba | SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) | Latest Datasheet | ||||
| 3. | 10GWJ2CZ47C |
Toshiba | DIODE SCHOTTKY DIODE 40V 10A 3(12-10C1A) | Latest Datasheet | ||||
| 4. | 10GWJ2CZ47C |
Toshiba | SBD 10A, VRRM=40V, VFM=0.55V | Latest Datasheet | ||||
| 5. | 10GWJ2CZ47C |
Toshiba | SCHOTTKY BARRIER RECTIFIER STACK - SCHOTTKY BARRIER TYPE | Latest Datasheet | ||||
| 6. | 10FWJ2CZ47M |
Toshiba | SBD 10A, VRRM=30V, VFM=0.47V | Latest Datasheet | ||||
| 7. | 10FWJ2CZ47M |
Toshiba | DIODE SCHOTTKY DIODE 30V 10A 3(12-10C1A) | Latest Datasheet | ||||
| 8. | 10FWJ2CZ47M |
Toshiba | SCHOTTKY BARRIER RECTIFIER STACK(LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE) | Latest Datasheet | ||||
| 9. | 10FWJ2CZ47M |
Toshiba | SCHOTTKY BARRIER RECTIFIER STACK - SCHOTTKY BARRIER TYPE | Latest Datasheet | ||||
| 10. | 1008FC-621KLC |
Coilcraft, Inc. | PoE transformer, SMT | Latest Datasheet |
| « Previous 1 2 3 4 5 6 7 8 9 10 Next » |
| 1. |  50.86 Kb • 1 Pages |
Abstract: ... 10A QL113D M K M 10 12 QL213D M K M 10 6. 15A QL113D M K M 15 12 QL213D M K M 15 6. 20A QL113D M K M 20 12 QL213D M K M 20 6. 25A QL113D M K M 25 12 QL213D M K M 25 6. Single Pole Two Pole. QL Time Delay. Trip time listed in seconds ... Labels: 10 M 20A |
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| 2. |  1076.06 Kb • 29 Pages |
Abstract: ... k 1M 10 M. Mechanical drawings See mechanical data table for dimensions. SIDE. FN 354-4, -6, -12 /01 ... • Nennströme von 3 bis 20A • Geringer Ableitstrom • Anschlüsse für drei Phasen, Nulleiter und ... Labels: 10 M 20A |
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| 3. |  522.25 Kb • 8 Pages |
Abstract: ... RDS(on) 10.4 m. ID 30 A. Feature. N-Channel. Logic Level. Low on-resistance RDS(on) Excellent Gate ... ID=20A, VDD=25V, RGS=25. EAS 20 mJ. Reverse diode dv/dt. IS=30A, VDS=24V, di/dt=200A/μs, Tjmax ... Labels: 10 M 20A |
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| 4. |  501.01 Kb • 2 Pages |
Abstract: ... Emitter-Base Voltage V VEBO 10. IC Collector Current =pw 1ms 20 40 A. IC Reverse Collector Current ... VCE(sat) Collector-Emitter Saturation Voltage Ic 20A IB 0.27A V. VBE(sat) Base-Emitter ... Labels: 10 M 20A |
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| 5. |  38.66 Kb • 7 Pages |
Abstract: ... Static drain to source on state RDS(on) — 10 14 m Ω I D = 20A, VGS = 10V* 1. resistance RDS(on) — 15 25 m Ω I D = 20A, VGS = 4V* 1. Forward transfer admittance |yfs | 20 30 — S I D = 20A, VDS = 10V* 1. Input capacitance ... Labels: 10 M 20A |
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| 6. |  103.06 Kb • 2 Pages |
Abstract: ... 3 to 20A current ratings Low leakage current Three phases + neutral + earth connections ... 10 k 100 k 1M 10 M. dB. 70. 60. 50. 40. 30. 20. 10. 0. -10. -20. Mechanical drawings. See mechanical data table for ... Labels: 10 M 20A |
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| 7. |  178.97 Kb • 4 Pages |
Abstract: ... /?? -1 -3 -6 -10 -12 -15. 0.54. -16. 0.4. -20. /06 /07. FN 9222. • Up to 20A current ratings IEC 950 ... 1 to 6A 10 to 15A 16-20A. 28.5. M3 90o. 6. AWG 18 AWG 16 160. A B C D. F H J M. N P R S W. Y Z. A. C. C. M. N R. P. B H. D. S. J. F. Front. Front ... Labels: 10 M 20A |
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| 8. |  39.1 Kb • 2 Pages |
Abstract: ... 10 lbf•in (1.1N•m) Thermal Resistance. TO-247AC. Preliminary Data Sheet PD - 9.1085. Revision 0 ... Qg Total Gate Charge (turn-on) — 50 — IC = 20A. Qge Gate - Emitter Charge (turn-on) — 14 — nC VCC = 400V ... Labels: 10 M 20A |
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| 9. |  67.81 Kb • 2 Pages |
Abstract: ... 10 lbf•in (1.1N•m) Thermal Resistance. TO-247AC. Preliminary Data Sheet PD - 9.1085. Revision 0 ... Qg Total Gate Charge (turn-on) — 50 — IC = 20A. Qge Gate - Emitter Charge (turn-on) — 14 — nC VCC = 400V ... Labels: 10 M 20A |
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| 10. |  47.6 Kb • 9 Pages |
Abstract: ... Static drain to source on state RDS(on) — 10 14 m Ω I D = 20A, VGS = 10V* 1. resistance RDS(on) — 15 25 m Ω I D = 20A, VGS = 4V* 1. Forward transfer admittance |yfs | 20 30 — S I D = 20A, VDS = 10V* 1. Input capacitance ... Labels: 10 M 20A |
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