500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

10 DC-1 diode

Catalog Datasheet MFG & Type PDF Document Tags

CA3039

Abstract: 10 DC-1 diode 0.01 0.1 1 10 DC FORWARD CURRENT (mA) FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD CURRENT O , 1 ns Typical â'¢ Matched Monolithic Construction - VF Matched Within 5mV â'¢ Low Diode , 0.022 100 nA Magnitude of Diode Offset Voltage (Note 1) (Figure 1) lVF1~VF2Ì lF = 1mA - 0.5 5.0 mV , Diode (Ds) VF lF = 1mA - 0.65 - V Reverse Recovery Time >rfi lF= 10mA, lR = -10mA - 1.0 - ns Diode , VOLTAGE DROP (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT c DC m u 0.1 0.001 1 Vr
-
OCR Scan

CA3038

Abstract: ca3039 TEMPERATURE 0.01 0.1 1 10 TEMPERATURE (°C) FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs TEMPERATURE DC FORWARD CURRENT (mA) FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD CURRENT 6 -1 3 , i L L > I LL > - nA nA VR = -10V Magnitude of Diode Offset Voltage (Note 1) (Figure 1 , = 1mA VR = -2V, Ip = 0 VD I = 4V, Ip = 0 25 - 1.0 30 0.65 3.2 45 ns n pF pF 1 , DC FORWARD CURRENT (mA| FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC
-
OCR Scan

CA3039

Abstract: DIODE m14 ( V F1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV , 10 D5 D4 12 11 D3 11 1 13 SUBSTRATE 4 5 12 14 D5 2 3 CA3039 , . .20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF) . . . . . . . . . . , Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD , 3.2 - pF Magnitude of Diode Offset Voltage (Note 2) (Figure 1) Temperature Coefficient of
Intersil
Original
DIODE m14 CA30 CA3039M CA3039M96 ISO9000

MDD 500-22N1

Abstract: ixys MDD 26 - 14 VRRM/VDRM (V) 800 IFAVM 1400 Package style Diode Modules 1 36 q q q q q MDD 26 , VRRM = 800-1800 V Diode Modules VRSM VRRM V 800 1200 1400 1600 1800 1 2 2 , 1.25 D6 - 10 MDD 72 IFRMS = 2x 180 A IFAVM = 2x 113 A VRRM = 800-1800 V Diode Modules , Diode Modules VRSM 3 VRRM Type 800 1200 1400 1600 1800 1 2 2 3 1 , 800-1600 V High Power Diode Modules 3 VRSM VRRM V 800 1200 1400 1600 1 2 2
IXYS
Original
MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 IXYS MCC 550 MDD 500-12N1 D6-11 D6-14 D6-17 D6-20 D6-23 D6-26

RCA-CA3039

Abstract: CA3039 Diode (D$) vF Ip = 1 mA - 0.65 - V - Reverse Recovery Time «ir Ip « 10 mA, Ir = 10 mA - 1 - ns - , LEAD TEMPERATURE (During Soldering) At distance 1/16 ± 1/32 inch (1.59 ± 0.79mm) from case for 10 , Diode-to-Substrate Voltage, Vpj for Dj-Dg (term. 1,4,5,8 or 12 to term. 10) +20, -1 V DC Forward Current, Ip , -10/iA 5 7 - V - DC Reverse Breakdown Voltage Between any Diode Unit and Substrate V(BR)R lR = -10 , ) Current Between any Diode Unit and Substrate |R VR = -10 V - 0.022 100 nA 4 Magnitude of Diode Offset
-
OCR Scan
RCA-CA3039 CA3039T MONOLITHIC DIODE ARRAYS RCA CA3039 21aoi 92CS-IS262 92CS-15269 92CS-IS2W 92CS-I5261 SJCS-1526

CA3039

Abstract: diode 1334 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV) DC FORWARD , BETWEEN TERMINALS 1, 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10) (V) DC REVERSE VOLTAGE ACROSS DIODE (V , (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . , tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD f = 1kHz , pF Magnitude of Diode Offset Voltage (Note 2) (Figure 1) Temperature Coefficient of |VF1 - VF2
Harris Semiconductor
Original
diode 1334 1334 diode harris 721 1-800-4-HARRIS

CA3141E

Abstract: ca3141 ) 105 TA = +25oC 10 1 0.1 104 DIODE-TO-SUBSTRATE LEAKAGE CURRENT 103 102 10 DIODE , 0.2 0 0.1 1 10 102 FORWARD CURRENT (µA) 103 1 0.8 IF = 10mA 0.6 IF = 3mA , - VF10| 2.5 1 DIODE CAPACITANCE (pF) DIODE OFFSET VOLTAGE (mV) TA = +25oC 2 1.5 1 0.5 0.8 0.6 D5, D9 D2 0.4 D7, D8 D4 D1, D6 0.2 D3, D10 0 1 10 , (TERMS. 4, 5) 0 0.5 0 1 2 3 4 5 6 7 8 9 10 ANODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V
Harris Semiconductor
Original
CA3141E ca3141 VF10 CA3141

CB1AH-P-24V

Abstract: zener diode 4.2V : Bracket type Coil voltage (DC) 12V, 24 V D: with diode inside ds_61202_en_cb: 030412D 1 CB , pcs. Case: 200 pcs. built-in diode type. (Asterisks "" should be filled in from parts table.) Notes: 1 , Form C 1 Form A with resistor inside 1 Form C with resistor inside 1 Form A with diode inside 1 Form C , Products with diode inside are discontinued in 2014. CB RATING 1. Coil data 1) 1. No protective , ) (Initial) Min. 200 m/s2 {20G} Min. 1,000 m/s2 {100G} 10 Hz to 500 Hz, Min. 44.1m/s2 {4.5G} 10 Hz to 2,000
Panasonic
Original
CB1AH-P-24V zener diode 4.2V Relays 24v 70a cb1ahtp12v RELAY 20A 12V 24v Power Distribution Board

ixys MDD 26 - 14

Abstract: MDD 500-22N1 VRRM/VDRM (V) 800 IFAVM 1400 Package style Diode Modules 1 1 113 l l l MDA , 800-1800 V Diode Modules VRSM VRRM V 800 1200 1400 1600 1800 1 2 2 1 MDD , Characteristic Values 10 mA 1.38 0.8 6.1 TVJ = 125°C; IF = 25 A, -di/dt = 0.6 A/µs 50 6 per diode; DC current per module per diode; DC current per module 1.0 0.5 1.2 0.6 l l l l , ° 0.71 0.73 0.75 0.78 0.82 Constants for ZthJK calculation: i 1 2 3 4 D8 - 10 Rthi (K/W
IXYS
Original
MDO 220-14N1 DIODE 22-35 L ixys MDD 26 14 M5 DIODE 22-35 L ixys MDD 172 16 IXYS MCC 310 26-08N1 26-12N1 26-14N1 26-16N1 26-18N1 MDO500

CA3019

Abstract: RCA-CA3019 7 -6 5 -3 +12 7 -6 6 -3 +12 7 -6 7 -18 0 1,2, 3,6, 8 0 8 -3 +12 7 -6 9 -3 +12 7 -6 10 NO , Current (I p) = 1 mA - 0.73 0.78 V DC Reverse Breakdown Voltage DC Reverse Current (lr) = -10 mA 4 6 - V , (Leakage) Current Between any Diode Unit and Substrate DC Reverse Voltage (VR) = -4 V - 0.010 10 MA , Current (I p )= 1 mA - 1 5 mV Single Diode Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR) = -2V - 1.8 - PF Diode Quad-to-Substrate Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR
-
OCR Scan
CA3019 RCA-CA3019 forward reverse schematic diagram ican-5299 ca3019t ICAN-S299

CA3039

Abstract: CA3039M ( VF1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV , . NO. Pinouts CA3039 (SOIC) TOP VIEW 1 D4 DS D 6 NC 6 7 2 D1 3 D2 10 9 NC 10 D5 D4 12 D6 D3 D2 11 D3 11 1 13 SUBSTRATE 4 5 12 14 , Voltage (VDI) for D1 - D5 . . . . . . . . . . . 20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC , Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6
Intersil
Original

MONOLITHIC DIODE ARRAYS fairchild

Abstract: A3019 = 1 mA - 0.73 0.78 V BV DC Reverse Breakdown Voltage (Any Diode) DC Reverse Current, Ir = -10 mA , '"4 V - 0.010 10 mA ivF, -vf2i Magnitude of Diode Offset Voltage (Difference in DC Forward Voltage Drops of any Two Diode Units) DC Forward Current, 1 p = 1 mA - 1.0 5.0 mV cd Single Diode Capacitance , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS â'¢ /¿A30XX SERIES MA3019 excellent diode matching - 1 mv typ , (Note 1 ) 18 V electrical characteristics for fia3019 (For each diode, ta = 25°C unless otherwise
-
OCR Scan
A3019 MA3036 A3054 MONOLITHIC DIODE ARRAYS fairchild pa3026 PA3019 pa3046 diode 5D A3018 HA3018A A3026 A3039

MONOLITHIC DIODE ARRAYS fairchild

Abstract: MA3046 Recovery Time IF - 10 mA, Ir , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS â'¢ juA30XX SERIES /JA3039 EXCELLENT DIODE MATCHING - 1 mV TYP. REVERSE RECOVERY TIME - 1 ns TYP. LOW DIODE CAPACITANCE - 0.65 pF @ Vr - -2 V APPLICATIONS â'¢ Balanced , Peak Diode-to-Substrate Voltage, Vqi for Dj - D5 (term. 1,4,5JR or 12 to term. 10) DC Forward Current , MIN TYP MAX UNITS vF DC Forward Voltage Drop IF - 50 M A 1 mA 3 mA 10 mA - 0.65 0.73 0.76 0.81 0.69
-
OCR Scan
MA3046 UA3026HM vp2l DIODE IR 1F A3045 A3046 A3086 MA3018 A3018A MA3018AHM
Abstract: 1, 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10) (V) DC REVERSE VOLTAGE ACROSS DIODE (V) FIGURE , (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (Ip , (Figure 1) TEST CONDITIONS - 0.81 0.90 V V (BR)R Ipj = -10|iA 5 7 - V DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate V (BR)R Ipj = -10|iA 20 , Coefficient of |Vp-| - Vp 2 l (Figure 4) Tl M agnitude of Diode Offset Voltage (Note 2) (Figure 1 -
OCR Scan

CA3039

Abstract: CA3039M DIODE OFFSET ( V F1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET , (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT 100 1 100 10 0.5 0.4 , D3 D2 4 10 D1 9 DS 8 5 9 NC 10 D5 D4 12 11 D3 11 1 13 , Voltage (VDI) for D1 - D5 . . . . . . . . . . . .20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC , Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6
Intersil
Original
CD 07 pa 3029 b

030412D

Abstract: CM1F-12V cpm Min. 20 M (at 500 V DC) 500 Vrms for 1 min. 500 Vrms for 1 min. Max. 10 ms (initial) Max. 10 ms Max. 15 ms (with diode) (initial) Min. 200 m/s2 {20G} Min. 1,000m/s2 {100G} 10 Hz to 500 Hz, Min. 44.1 , bounce) Without diode 40 35 30 Quantity, n 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 , .: 20 A (14 V DC, at 85C 185F) N.C.: 10 A (14 V DC, at 85C 185F) 1 A 12 V DC Min. 106 Flux-resistant , _61204_en_cm: 030412D 1 CM ORDERING INFORMATION CM 1 F R Products with diode inside are discontinued in
Panasonic
Original
CM1F-12V air compressor

ECG905

Abstract: diodo 376 17 E D {â¡(â¡53^20 â¡â¡D3Sci5 1 ECG905 DIODE ARRAY On* (»od« "Ou*d" and Two laolatad Diodo , Reverse Current (Ir) = -10^ A 4 6 V â'¢ DC Reverse Breakdown Voltage Between any Diode Unit and , Reverse Voltage (Vr) =-4 V â'¢ 0.0055 10 mA 3 DC Reverse (Leakage) Current Between any Diode Unit and Substrate |R â'¢ DC Reverse Voltage (Vr) =-4 V â'¢ 0.010 10 /¿A â'¢ Magnitude of Diode Offset Voltage (Difference in DC Foiward Voltage Drops of any Two Diode Units) |vfi-vf2| â'¢ DC Foiward Current (If) -1 mA â
-
OCR Scan
diodo 376 diodo 10 A CG905 T-43-24 0QQ35I ECG90S

TAG 9048

Abstract: varistor 103 2kv BREAKING CURRENT (A) CYCLES 10 H 44 6 5 8 4 0 12 20 1 10 6 4 2 1 , 80 160 56 300 40 400 35 1,200 20 1,600 17.5 4,800 10 7,200 8.3 23,500 4.7 *Umin = 0.8 UN for 44.62 R 44 DC R 44 sens. DC U 2.0 UN U 2.0 UN 1.5 1.5 1 1.0 1 , 44 Series - Miniature P.C.B. Relays 6 - 10 A 44.52 44.62 - 2 pole, 6 A - 5 mm pinning - PCB / for use with 95 series sockets - 2 pole, 10 A - 5 mm pinning - PCB / for use with 95 series
-
Original
TAG 9048 varistor 103 2kv tag 9009 99.01.9.024.99.0 99.01.0.060.09.0 99.01.0.060.59.0 30/110/220V

94.84.1

Abstract: FINDER RELAY 94.84.1 VALUES: 10 A - 250 V DIELECTRIC STRENGTH: 2 kV AC PROTECTION CATEGORY: IP 20 AMBIENT TEMPERATURE , 41 12 11 9 44 8 14 5 42 4 12 1 A2 14 A1 13 COM 31 9 21 8 11 7 COM 41 12 31 11 21 10 11 9 COM NO 34 6 24 5 14 4 NO 44 8 34 7 24 6 14 5 NO NC 32 3 22 2 12 1 NC 42 4 32 3 22 2 12 1 NC A2 14 A1 13 A2 14 COIL A1 13 COIL 94.03 94.02 99
Finder
Original
94.84.1 FINDER RELAY 94.84.1 220 v ac to 12 v dc finder 94.02 094.71 relay 5534

diodos led

Abstract: DIODE CQ ) VF lF = 1 mA - 0.65 - V - Reverse Recovery Time â'¢rr If 10 mA, Ir - 10 mA - 1 - ns - Diode , Voltage, Vj)i for Di-D5 (term. 1,4,5,8 or 12 to term, 10) +20, -1 V DC Forward Current, Ip , - DC Reverse Breakdown Voilage Between any Diode Unit and Substrate V(BR)R Ir»-10 m A 20 - - V - , Diode Unit and Substrate |R VR = -10 V - 0.022 100 iiA 4 Magnitude of Diode Offset Voltage (Difference in DC Forward Voltage Drops of any Two Diode Units) |VF,-VF2| lF -1 mA - 0.5 5 mV 2 Temperature
-
OCR Scan
ECG907 diodos led DIODE CQ 50yuA diodos VHM-10V AM81ENT
Showing first 20 results.