NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N6660 | Defense Supply Center Columbus | N-Channel FET |
17 pages, |
Original |  |
|
|||||
| 2N6660 | General Electric | Power Transistor Data Book 1985 |
2 pages, |
Scan | |
|
|||||
| 2N6660 | Intersil Corporation | Data Book 1981 |
2 pages, |
Scan | |
|
|||||
| 2N6660 | Motorola | European Master Selection Guide 1986 |
1 pages, |
Scan | |
|
|||||
| 2N6660 | Motorola / Freescale Semiconductor | TMOS SWITCHING FET TRANSISTORS |
3 pages, |
Scan | |
|
|||||
| 2N6660 | Motorola / Freescale Semiconductor | FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor |
4 pages, |
Original | |
|
|||||
| 2N6660 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
Scan | |
|
|||||
| 2N6660 | N/A | N-channel, High Frequency Power Transistor |
17 pages, |
Original | |
|
|||||
| 2N6660 | N/A | FET Data Book |
2 pages, |
Scan | |
|
|||||
| 2N6660 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N6659 2N6659 MPF6659 MPF6659 2N6660 MPF6660 MPF6660 2N6661 2N6661 MPF6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER , an-Resistance - 1.5 Ohm Typ - 2N66591MPF6659 2N66591MPF6659 2.0 Ohm Typ - 2N6660/2N6661 - MPF6660/MPF6661 MPF6660/MPF6661 o Low , *2F':*$ ,:*:,. ,:,". ,.,., `:?,. ,4. "$,~ ID IDM 2.0 2N6659 2N6659 2N6660 , = 15 v. Vnc = 0) - - - - 4 Max Unit Vdc 35 60 90 2N6659 2N6659, MPF6659 MPF6659 2N6660 , = IOV, ID = I.OA) 2N6659 2N6659, 2N6660, 2N6661 2N6661 , 2N6659 2N6659, 2N6660, 2N6661 2N6661 , (VGS = 5.0 V, ID = ... | Original |
4 pages, |
MPF6659 2N6659 MPF6661 2N6661 MPF6660 2N6660 2N6659 abstract |
|
|||
| Abstract: High-speed switching • No second breakdown • Low RoSon QUICK REFERENCE DATA J 2N6659 2N6659 2N6660 2N6661 2N6661 2N6659 2N6659 2N6660 2N6661 2N6661 Drain-source voltage VDS max. 35 60 90 V Gate-source voltage (open drain) VgSO , 2N6660 2N6661 2N6661 41E D H 711QASfci â-¡QEb7cìM 3 «PHIN PHILIPS INTERNATIONAL V_ T-39-Q5 T-39-Q5 RATINGS Limiting , 1 MHz VDS = 25V;VGs = 0 Output capacitance at f = 1 MHz Vds=25 V;VGS = 0 2N6659 2N6659 2N6660 2N6661 2N6661 , Tstg - 65to+ 150 °C Ti max. 150 oC Rthj-c = - 20 K/W 2N6659 2N6659 2N6660 2N6661 2N6661 V(BR)DSS min. 35 ... | OCR Scan |
3 pages, |
max 1988 2N6659 2N6660 2N6661 datasheet abstract |
|
|||
| Abstract: 2N6660 2N6661 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 3.0 1.5A 2N6660 90V 4.0 , case for 10 seconds. 7-3 2N6660/2N6661 Thermal Characteristics Package ID (continuous)* jc ID (pulsed) Power Dissipation @ TC = 25°C ja °C/W IDR* IDRM °C/W 2N6660 , otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 2N6660 ... | Original |
2 pages, |
2N6661 2N6660 2N6660 abstract |
|
|||
| Abstract: 2N6660 2N6661 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 3.0 1.5A 2N6660 90V 4.0 , website. 1 2N6660/2N6661 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C jc ja °C/W °C/W IDR* IDRM 2N6660 410mA 3A , specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 2N6660 Max ... | Original |
2 pages, |
2N6661 2N6660 2N6660 abstract |
|
|||
| Abstract: 2N6659 2N6659 2N6660 2N6661 2N6661 J N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical , Respective Manufacturer 2N6659 2N6659 2N6660 2N6661 2N6661 J RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2 N6659 N6659 2N6660 2N6661 2N6661 Drain-source voltage VDS max. 35 60 90 V Gate-source , junction to case Rthj-c = 20 K/W CHARACTERISTICS T: = 25 °C unless otherwise specified 2N6659 2N6659 2N6660 , Wss toff 2N6659 2N6659 2N6660 2N6661 2N6661 J 2N6659 2N6659 2N6660 2N6661 2N6661 max. 15 15 15 pF typ. 5 5 5 ns max. 10 ... | OCR Scan |
3 pages, |
TP 1322 2N6661 2N6660 2N6659 2N6659 abstract |
|
|||
| Abstract: 2N6660,1 1.2 AMPERES 60, 90 VOLTS RPS(ON) = 3.0 n This series of N-Channel Enhancement-mode Power , (Ta= 25° C) (unless otherwise specified) RATING SYMBOL 2N6660 2N6661 2N6661 UNITS Drain-Source Voltage VdSS , Drain-Source Breakdown Voltage 2N6660 (VQO = OV, lD = 10 f/A) 2N6661 2N6661 (VQS = 0V, ID = 2.5 MA) 2N6660 2N6661 2N6661 , Threshold Voltage (Vds = Vqs. Id = 1 mA) VgS(TH) 0.8 - 2.0 Volts Drain-Source Saturation Voltage 2N6660 (Vqs = 5V, lD = 0.3A) 2N6661 2N6661 VdS(ON) _ _ 1.5 1.6 Volts Drain-Source Saturation Voltage 2N6660 (VGS = ... | OCR Scan |
2 pages, |
2N6661 2N6660 2N6660 abstract |
|
|||
| Abstract: 2N6660 2N6661 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 3.0 1.5A 2N6660 , 300°C Distance of 1.6 mm from case for 10 seconds. 8-3 8 2N6660/2N6661 Thermal , IDR* IDRM °C/W 2N6660 1.1A 3A 6.25W 20 125 1.1A 3.0A 2N6661 2N6661 0.9A , Drain-to-Source Breakdown Voltage 2N6660 Max Unit 60 2N6661 2N6661 Typ 90 VGS(th) Change in ... | Original |
2 pages, |
2N6661 2N6660 2N6660 abstract |
|
|||
| Abstract: d. This parameter not registered with JEDEC on 2N6660. www.vishay.com 11-2 ns VNDQ06 VNDQ06 , 2N6660, VQ1004J/P VQ1004J/P Vishay Siliconix N-Channel 60-V (D-S) Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) ID (A) 3 @ VGS = 10 V 0.8 , 1 NC 2N6660 "S" fllxxyy 2 3 G D N VQ1004J VQ1004J "S" fllxxyy NC G2 "S" = , N Top View 2N6660 N "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = ... | Original |
4 pages, |
VQ1004P VQ1004J 2N6660 VQ1004J/P 2N6660 abstract |
|
|||
| Abstract: on 2N6659 2N6659 and 2N6660. 2 ns VNDQ06 VNDQ06 P-37994-Rev. C (08/08/94) 2N6659/2N6660, VQ1004J/P VQ1004J/P , 2N6659/2N6660, VQ1004J/P VQ1004J/P Siliconix NChannel EnhancementMode MOS Transistors Product Summary , VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ VGS = 10 V 0.8 to 2 1.1 VQ1004J/P VQ1004J/P 60 , 8 D3 N S 1 2 3 G N D N N Top View Top View 2N6659 2N6659 2N6660 , ) Single Parameter Symbol 2N6659 2N6659 2N6660 VQ1004J VQ1004J Total Quad VQ1004P VQ1004P VQ1004J/P VQ1004J/P Unit ... | Original |
4 pages, |
VQ1004P VQ1004J 2N6659 2N6660 VQ1004J/P 2N6659 abstract |
|
|||
| Abstract: MOTOROLA MAXIMUM RATINGS Rating » Symbol 2N6659 2N6659 MPF6659 MPF6659 2N6660 MPF6660 MPF6660 2N6661 2N6661 MPF6661 MPF6661 Unit , Drain Current - Continuous (1) Pulsed (2) Id 'DM 2.0 3.0 Ade 2N6659 2N6659 2N6660 2N6661 2N6661 MPF6659 MPF6659 MPF6660 MPF6660 , = 10 /*A> 2N6659 2N6659, MPF6659 MPF6659 2N6660, MPF6660 MPF6660 2N6661 2N6661, MPF6661 MPF6661 V{BR)DSX 35 60 90 - - Vdc ON , (VQS = 10 V, lD = 1.0 A) 2N6659 2N6659, MPF6659 MPF6659 2N6660, MPF6660 MPF6660 2N6661 2N6661, MPF6661 MPF6661 VDS(on) - - 1.8 3.0 4.0 Vdc , Static Drain-Source On Resistance (VGS = 10 Vdc, lD = 1.0 Adc) 2N6659 2N6659, MPF6659 MPF6659 2N6660, MPF6660 MPF6660 2N6661 2N6661 ... | OCR Scan |
3 pages, |
MPF6661 MPF6660 MPF6659 2N6661 2N6660 2N6659 2N6659 abstract |
|
|||
| Abstract: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si Au 1.3 (mils) Bonding Pad Description Pad # Function x Position2 y Position2 x Size y Size 1 Source 0 0 5.5 6.0 2 ... | Original |
1 pages, |
2N6660 2N6660 abstract |
|
|||
| Abstract: Supertex inc. 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description Pad # Function x Position2 y Position2 x Size y Size 1 Source 0 0 5.5 6.0 2 Gate 0 -8.5 4.4 4.3 (mils ... | Original |
1 pages, |
2N6660 2N6660 abstract |
|
|||
| Abstract: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description The Supertex 2N6660 and 2N6661 2N6661 are enhancementmode (normally-off) transistors that utilizes a vertical , BVDSS/BVDGS (V) RDS(ON) (max) () ID(ON) (min) (A) 2N6660 TO-39 60 3.0 1.5 , 1.6mm from case for 10 seconds. DGS TO-39 Case: DRAIN 2N6660/2N6661 Electrical , ) Max 2N6660 60 - - 2N6661 2N6661 90 - - 0.8 Drain-to-source breakdown voltage ... | Original |
3 pages, |
2N6661 2N6660 125OC 2N6660/2N6661 2N6660/2N6661 abstract |
|
|||
| Abstract: DMOS High Reliability Products The following products are available with High Reliability processing per test methods and flows of MIL-STD-750 MIL-STD-750 and MIL-STD-883 MIL-STD-883. For ordering purposes, add the process flow prefix to the device number as shown in the following examples: Process Flow SX RB Device Type VN0109N9 VN0109N9 VC0106N7 VC0106N7 Device Type SX SJ 2N6660 · · TN0104N2 TN0104N2 · · TP0104N2 TP0104N2 · · TP0610N2 TP0610N2 · · VN0104N9 VN0104N9 · · VN0109N9 VN0109N9 · · VN0550N2 VN0550N2 · · ... | Original |
1 pages, |
VQ7254N7 SXVN0109N9 TN0104N2 TP0104N2 TQ3001N7 2N6660 VQ3001 Diode SJ TN0606N7 VP0109N9 VP0109N2 Transistor SJ VC0106N7 TP0610N2 MIL-STD-750 MIL-STD-883 MIL-STD-750 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| No abstract text available www.datasheetarchive.com/download/3373969-672999ZC/2n6660.jpg |
User Photos | 23/05/2012 | 5.89 Kb | JPG | 2n6660.jpg |
| No abstract text available www.datasheetarchive.com/download/51118880-673000ZC/2n6660f.jpg |
User Photos | 23/05/2012 | 6.26 Kb | JPG | 2n6660f.jpg |
| 0300M 0300M 0300M 0300M TN0201 TN0201 TN0201 TN0201 MPF6660 MPF6660 MPF6660 MPF6660 2N6660 dg401 MPF6661 MPF6661 MPF6661 MPF6661 2N6661 2N6661 2N6661 2N6661 dg401 MPF820 MPF820 MPF820 MPF820 J212 210 MPF89 MPF89 MPF89 MPF89 VN2406M VN2406M VN2406M VN2406M TN2410 TN2410 TN2410 TN2410 ZVN3304A ZVN3304A ZVN3304A ZVN3304A VN1206L VN1206L VN1206L VN1206L VN1206 VN1206 VN1206 VN1206 ZVN3304B ZVN3304B ZVN3304B ZVN3304B 2N6660 dg406 ZVN3306A ZVN3306A ZVN3306A ZVN3306A VN0610L VN0610L VN0610L VN0610L VN0610L VN0610L VN0610L VN0610L ZVN3306B ZVN3306B ZVN3306B ZVN3306B 2N6660 dg408 www.datasheetarchive.com/files/temic/database/text/lpdxref.txt |
Temic | 13/03/1997 | 21.35 Kb | TXT | lpdxref.txt |
| * * SUPERTEX DMOS SPICE MODEL LIBRARY (2/02) * *2N6660 MODEL * .MODEL 2N6660 NMOS (LEVEL=3 RS=0.36 NSUB=1.0E15 +DELTA=0.1 KAPPA=0.0506 TPG=1 CGDO=6.343E-10 343E-10 343E-10 343E-10 +RD=0.43 VTO=1.600 VMAX=1.0E7 ETA=0.0223089 +NFS=6.6E10 TOX=1.0E-7 LD=1.698E-9 698E-9 698E-9 698E-9 UO=862.425 +XJ=6.4666E-7 4666E-7 4666E-7 4666E-7 THETA=1.0E-5 CGSO=9.09E-9 09E-9 09E-9 09E-9 L=2.5E-6 +W=5.0E-3) .ENDS * *2N6661 2N6661 2N6661 2N6661 MODEL * .MODEL 2N6661 2N6661 2N6661 2N6661 NMOS (LEVEL=3 RS=0.36 NSUB=1.0E15 +DELTA=0 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/supertex.lib |
Spice Models | 18/04/2010 | 26.84 Kb | LIB | supertex.lib |
| U257 2N5912 2N5912 2N5912 2N5912 5911 U287 2N5912 2N5912 2N5912 2N5912 5911 2N6658 2N6658 2N6658 2N6658 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 TN0102N2 TN0102N2 TN0102N2 TN0102N2 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 2N6659 MPF6660 MPF6660 MPF6660 MPF6660 2N6660 2N6659 2N6659 2N6659 2N6659 ZVN3304B ZVN3304B ZVN3304B ZVN3304B 2N6660 2N6659 2N6659 2N6659 2N6659 ZVN3306B ZVN3306B ZVN3306B ZVN3306B 2N6660 2N6659 2N6659 2N6659 2N6659 MPF6661 MPF6661 MPF6661 MPF6661 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 VN89AB VN89AB VN89AB VN89AB 2N6661 2N6661 2N6661 2N6661 2N www.datasheetarchive.com/files/temic/database/text/xsil.txt |
Temic | 07/03/1997 | 48.23 Kb | TXT | xsil.txt |
| *version 6.1 3135129711 @index symloc 2N6659 2N6659 2N6659 2N6659:TO205AD 0 28 symloc 2N6660:TO205AD 28 28 symloc 2N6661 2N6661 2N6661 2N6661:TO205AD 56 28 symloc 2N6755 2N6755 2N6755 2N6755:TO204AA 84 28 symloc 2N6756 2N6756 2N6756 2N6756:TO204AA 112 28 symloc 2N6757 2N6757 2N6757 2N6757:TO204AA 140 28 symloc 2N6758 2N6758 2N6758 2N6758:TO204AA 168 28 symloc 2N6759 2N6759 2N6759 2N6759:TO204AA 196 28 symloc 2N6760 2N6760 2N6760 2N6760:TO204AA 224 28 symloc 2N6761 2N6761 2N6761 2N6761:TO204AA 252 28 symloc 2N6762 2N6762 2N6762 2N6762:TO204AA 280 28 symloc 2N6763 2N6763 2N6763 2N6763:TO204AE 308 28 symloc 2N6764 2N6764 2N6764 2N6764:TO204AE 336 28 108 symloc TO39S 17206 65 *package 2N6659 2N6659 2N6659 2N6659 ako TO205AD *package 2N6660 ako TO205AD *package 2N6661 2N6661 2N6661 2N6661 ako www.datasheetarchive.com/files/spicemodels/misc/models/pwrmos.plb |
Spice Models | 27/08/2003 | 33.66 Kb | PLB | pwrmos.plb |
| symloc IRH450/TEMP IRH450/TEMP IRH450/TEMP IRH450/TEMP:nmose_x 85241 229 symloc M2N6659 M2N6659 M2N6659 M2N6659:nmose 85470 291 symloc M2N6660:nmose 85761 291 symloc www.datasheetarchive.com/files/spicemodels/misc/models/pwrmos.slb |
Spice Models | 27/08/2003 | 113.61 Kb | SLB | pwrmos.slb |
| 6,25 28 2 2N6659 2N6659 2N6659 2N6659 TO205AD (TO39) 2N6660 TO205AD (TO39) 60 3 2.0 10 35 3 6.25 29 2 2N6661 2N6661 2N6661 2N6661 TO205AD www.datasheetarchive.com/files/temic/database/text/tsi_lpd.txt |
Temic | 12/03/1997 | 28.58 Kb | TXT | tsi_lpd.txt |
| awbirfz48n * *$ model description: "awb2n6660" *b Device model created by analog_uprev for 2n6660 on Wed Mar 28 17:51:02 IST 2001 .subckt awb2n6660 1 2 3 + params: + BYPASS_L=0 + IC_VDS=1.10250E-36 10250E-36 10250E-36 10250E-36 + MD=.375 + BVD=66 + IBVD=125m + TTD=2n xinst2n6660 1 2 3 model514_{BYPASS_L} params: ic ={CJOD} + vjd={VJD} + md={MD} + bvd={BVD} + ibvd={IBVD} + ttd={TTD} + .ends awb2n6660 *$ end model description: "awb2n6660" * * *$ model description: "awb2n6661" *b Device model created by analog_uprev for www.datasheetarchive.com/files/spicemodels/misc/mfn.lib |
Spice Models | 21/06/2007 | 424.67 Kb | LIB | mfn.lib |
| -Channel Enhancement-Mode 2N6659 2N6659 2N6659 2N6659 2N6660 DMOSFETs - Low-Power MOS N-Channel Enhancement-Mode 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 2N6661 DMOSFETs www.datasheetarchive.com/files/temic/database/text/allparts.txt |
Temic | 12/03/1997 | 67.32 Kb | TXT | allparts.txt |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N6660+JAN | Defense Supply Center Columbus | N-Channel Enhancement MOSFET | |
|
| 2N6660+JANTX | Defense Supply Center Columbus | N-Channel Enhancement MOSFET | |
|
| 2N6660+JANTXV | Defense Supply Center Columbus | N-Channel Enhancement MOSFET | |
| Part | Similar Part | Notes |
| 2N6660 Buy | RFL2N06 Buy | |
| 2N6660JANTX Buy | JANTX2N6660 Buy |