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Abstract: (Body Dioda) O -i- .Nico ! intégral reverse lij p-1/ p-n junction diode. "Is VSD i pntie Forward , Gate-to-Source Voltage vm R.M.S. Isolation Voilage. Orcuit to Base |1 Minute) 2.5 kV I Tj Operating Junction , Unit« RRK Junctian-to-Case 1 - - 1 U.ÜÜ R«cs Casa-to-Sink. Flat Greased Surface 1 - - Mounting torque +10%, MS Screw a - - 1 I Busbar to HEXPAK wirn MS Screw I - 3.0 - 1 1 wt Approximate Weight 1 - , * 1 .OmA ROSÎON) Slatic Drain-to-Sounce Qn-R* »sistarce ® - Z2 3.3 ma Vos= 10V. I0= 110A ® 'O(ON) On ... OCR Scan
datasheet

2 pages,
56.29 Kb

E78996 IRFK6H/J054 IRFK6H/J054 abstract
datasheet frame
Abstract: Current (Body Diode) - - 7.7 A MOSFET symbol showing the / I , integral reverse G\ |*1 p-n junction diode , VGS = 1 ov -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature (°C) Fig 4 , Source-Drain Diode Forward Voltage e < o - 1 1 im1i- 1 II Mill-1-H PERATION IN THIS AREA LIMITED BY, RDS , © 210 mJ I ar Avalanche Current © 7.7 A Ear Repetitive Avalanche Energy © 4.2 mJ dv/dt Peak Diode Recovery dv/dt ® 5.5 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering ... OCR Scan
datasheet

6 pages,
167.76 Kb

IRFU120 IRFR120 AN-994 523D 1RFR120 IRFR120 abstract
datasheet frame
Abstract: Current (Body Diode) - - 2.7 A MOSFET symbol _^ showing the / I integral reverse a-\ |*1 p-n junction , 7. Typical Source-Drain Diode Forward Voltage 102 CL E < £ Ü 5 o -r II Ulli-1 1 1 1 Hill-1-1- , © 61 mJ Iar Avalanche Current © 2.7 A Ear Repetitive Avalanche Energy © 3.6 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibf.in ... OCR Scan
datasheet

6 pages,
170.3 Kb

IRF614 IRF614 abstract
datasheet frame
Abstract: symbol ^^ showing the AI-; integral reverse G-U [*1 p-n junction diode. d Ism Pulsed Source Current , Diode Recovery dv/dt ® 5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance ! Parameter Min. Typ. , , Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < to Q - 1 1 Mill-1 1 1 1 , Paralleling • Simple Drive Requirements D GA M ) S Vdss=200V RDS(on) = 1 lD = 0.96 A Description ... OCR Scan
datasheet

6 pages,
181.75 Kb

IRFL210 AN-994 IRFL210 abstract
datasheet frame
Abstract: symbol ^^ showing the AI-; integral reverse G-U [*1 p-n junction diode. d Ism Pulsed Source Current , Diode Recovery dv/dt ® 5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance ! Parameter Min. Typ. , , Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < to Q - 1 1 Mill-1 1 1 1 , Paralleling • Simple Drive Requirements D GA M ) S Vdss=200V RDS(on) = 1 lD = 0.96 A Description ... OCR Scan
datasheet

6 pages,
181.76 Kb

IRFL210 AN-994 IRFL210 abstract
datasheet frame
Abstract: G-\ [*1 p-n junction diode. d ) s ISM Pulsed Source Current (Body Diode) © - - 40 VsD Diode , Typical Source-Drain Diode Forward Voltage 0.1 2 5 1 2 5 10 2 5 1022 5 1032 5 104 Vos. Drain-to-Source , Avalanche Rated I D G \ 1- ¡V * S Description Third Génération HEXFETs from International Rectifier , Energy © 470 mJ Iar Avalanche Current © 10 A Ear Repetitive Avalanche Energy © 9.6 mJ dv/dt Peak Diode Recovery dv/dt ® 3.5 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range "C ... OCR Scan
datasheet

6 pages,
369.74 Kb

B14A B14A diode IRFIP450 diode B14A IRFIP450 abstract
datasheet frame
Abstract: Continuous Source Current (Body Diode) - - 20 A MOSFET symbol showing the / I integral reverse G-\ ¡*1 p-n junction diode. d s Ism Pulsed Source Current (Body Diode) © - - 80 VsD Diode Forward Voltage - - 2.0 , Diode Recovery dv/dt © 5.0 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range , junction temperature (See Figure 11) © Vdd=50V, starting Tj=25°C, L=1,9mH Rg=25Q, Ias=20A (See Figure 12 , 1 Vsd, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage ... OCR Scan
datasheet

6 pages,
164.5 Kb

IRFP240 IRFP240 abstract
datasheet frame
Abstract: Current (Body Diode) - - -6.5 A MOSFET symbol showing the / I Integral reverse a\ |~1 p-n junction diode , © -6.4 A Ear Repetitive Avalanche Energy © 7.4 mJ dv/dt Peak Diode Recovery dv/dt ® -5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm , ) Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 2 5 1 2 5 10 2 5 102 2 -Vqs, Drain-to-Source , RejA Junction-to-Ambient (PCB mount)* - - 40 R&ja Junctlon-to-Ambient - - 62 * When mounted on 1 ... OCR Scan
datasheet

6 pages,
178.77 Kb

SMD-220 smd diode marking JJ smd diode marking JC IRF9630S AN-994 IRF9630S abstract
datasheet frame
Abstract: Source Current (Body Diode) - - 8.1 A MOSFET symbol showing the / I integral reverse B\ [*1 p-n junction , © 300 mJ Iah Avalanche Current © 8.1 A Ear Repetitive Avalanche Energy © 7.4 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range °C , Voltage Temp. Coefficient - 0.37 - V/°C Reference to 25°C, Id= 1 mA RdS(oji) Static Drain-to-Source , Vds=250V, Vgs=0V - - 250 Vds=200V, Vgs=0V, Tj=1 25°C Iqss Gate-to-Source Forward Leakage - - 100 nA ... OCR Scan
datasheet

6 pages,
171.1 Kb

IRF634 476C IRF634 abstract
datasheet frame
Abstract: symbol showing the / I , integral reverse s-\ f*1 p-n junction diode. D ) S Ism Pulsed Source Current , Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < O ç 2 Q D 0 Nili 1 1 1 MIHI , Avalanche Current © 9.2 A Ear Repetitive Avalanche Energy © 6.0 mJ dv/dt Peak Diode Recovery dv/dt ® 5.5 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+175 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Reue Junction-to-Case ... OCR Scan
datasheet

6 pages,
179.17 Kb

SMD-220 IRF520S DIODE smd marking A3 AN-994 IRF520S abstract
datasheet frame

Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital temperature as well as the temperature of a target IC with a diode junction, such as a Pentium II™ Processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC • Supply Current 1 mA (max) • Local Temperature Accuracy ±1.0°C (typ) • Remote Diode Temperature [Information as of 12-Aug-99] LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface
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National 13/08/1999 11.74 Kb HTM nsc02816-v3.htm
Please enable Javascript in your browser. National P/N LM91 - Diode Input Digital the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC's die. A host can Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy +60°C to +100°C ±4°C (max LM91 Product Folder Diode Input Digital Temperature Sensor with Two-Wire Interface
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National 16/08/2002 10.81 Kb HTM nsc03535-v1.htm
National P/N LM91 - Diode Input Digital Temperature Sensor with Two-Wire Interface [Obsolete] LM91 Product Folder Diode Input Digital Temperature Sensor with Two-Wire Interface senses its own temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy
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National 17/02/2005 5.83 Kb HTML lm91.html
National P/N LM84 - Diode Input Digital Temperature Sensor with Two-Wire Interface - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description Features (Volt) 3.60 Quiescent Current (mA) 1 RemoteDiode ThermalSensor () 1 Interface target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy
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National 17/02/2005 15.95 Kb HTML lm84.html
Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital Also: LM83 - LM83- LM83- LM83- LM83- Triple Remote Diode Input Temperature Sensing Generic P/N temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy +60°C to +100°C ±3°C (max
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National 28/06/2001 20.14 Kb HTM nsc04384-v1.htm
Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Products > Analog - Thermal Management > LM84 LM84 Product Folder Diode
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National 16/08/2002 20.3 Kb HTM nsc03519-v1.htm
Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description senses its own temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy
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National 01/11/2002 22.03 Kb HTM nsc02415-v5.htm
Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital SETS REMOTE DIODE SENSING Generic P/N 84 Contents General Description temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC's die. A host can query the _Square] Local Temperature Accuracy ±1.0°C (typ) [Solid_Square] Remote Diode Temperature Accuracy +60°C to
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National 14/09/2000 18.93 Kb HTM nsc03189-v2.htm
, current can flow through the middle of the source cell, across a forward biased P-N junction. In the "reverse" direction, the power HEXFET ® thus behaves like a P-N junction rectifier. The integral body Note AN-936 AN-936 AN-936 AN-936 (Page 1 of 9) Title: The Do's and Don'ts of Using MOS-Gated Transistors 1 due to the stray inductance in series with the anti-parallel diode. This is a significant inherently have built into them an integral reverse body-drain diode. The existence of this diode is
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International Rectifier 06/10/1998 4.51 Kb HTM wcd00c08.htm
Please enable Javascript in your browser. National P/N LM86 - ±1°C Accurate, Remote Diode Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface Generic P/N 86 Date View Online Download Receive via Email LM86 ±1°C Accurate, Remote Diode and Download Receive via Email LM86 ±1°C Accurate, Remote Diode and Local Digital Temperature accurately determined using the LM86 as long as a dedicated diode (semiconductor junction) is available on
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National 01/11/2002 18.96 Kb HTM nsc02416-v5.htm