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| Abstract: (Body Dioda) O -i- .Nico ! intégral reverse lij p-1/ p-n junction diode. "Is VSD i pntie Forward , Gate-to-Source Voltage vm R.M.S. Isolation Voilage. Orcuit to Base |1 Minute) 2.5 kV I Tj Operating Junction , Unit« RRK Junctian-to-Case 1 - - 1 U.ÜÜ R«cs Casa-to-Sink. Flat Greased Surface 1 - - Mounting torque +10%, MS Screw a - - 1 I Busbar to HEXPAK wirn MS Screw I - 3.0 - 1 1 wt Approximate Weight 1 - , * 1 .OmA ROSÎON) Slatic Drain-to-Sounce Qn-R* »sistarce ® - Z2 3.3 ma Vos= 10V. I0= 110A ® 'O(ON) On ... | OCR Scan |
2 pages, |
E78996 IRFK6H/J054 IRFK6H/J054 abstract |
| Abstract: Current (Body Diode) - - 7.7 A MOSFET symbol showing the / I , integral reverse G\ |*1 p-n junction diode , VGS = 1 ov -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature (°C) Fig 4 , Source-Drain Diode Forward Voltage e < o - 1 1 im1i- 1 II Mill-1-H PERATION IN THIS AREA LIMITED BY, RDS , © 210 mJ I ar Avalanche Current © 7.7 A Ear Repetitive Avalanche Energy © 4.2 mJ dv/dt Peak Diode Recovery dv/dt ® 5.5 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering ... | OCR Scan |
6 pages, |
IRFU120 IRFR120 AN-994 523D 1RFR120 IRFR120 abstract |
| Abstract: Current (Body Diode) - - 2.7 A MOSFET symbol _^ showing the / I integral reverse a-\ |*1 p-n junction , 7. Typical Source-Drain Diode Forward Voltage 102 CL E < £ Ü 5 o -r II Ulli-1 1 1 1 Hill-1-1- , © 61 mJ Iar Avalanche Current © 2.7 A Ear Repetitive Avalanche Energy © 3.6 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibf.in ... | OCR Scan |
6 pages, |
IRF614 IRF614 abstract |
| Abstract: symbol ^^ showing the AI-; integral reverse G-U [*1 p-n junction diode. d Ism Pulsed Source Current , Diode Recovery dv/dt ® 5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance ! Parameter Min. Typ. , , Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < to Q - 1 1 Mill-1 1 1 1 , Paralleling • Simple Drive Requirements D GA M ) S Vdss=200V RDS(on) = 1 lD = 0.96 A Description ... | OCR Scan |
6 pages, |
IRFL210 AN-994 IRFL210 abstract |
| Abstract: symbol ^^ showing the AI-; integral reverse G-U [*1 p-n junction diode. d Ism Pulsed Source Current , Diode Recovery dv/dt ® 5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance ! Parameter Min. Typ. , , Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < to Q - 1 1 Mill-1 1 1 1 , Paralleling • Simple Drive Requirements D GA M ) S Vdss=200V RDS(on) = 1 lD = 0.96 A Description ... | OCR Scan |
6 pages, |
IRFL210 AN-994 IRFL210 abstract |
| Abstract: G-\ [*1 p-n junction diode. d ) s ISM Pulsed Source Current (Body Diode) © - - 40 VsD Diode , Typical Source-Drain Diode Forward Voltage 0.1 2 5 1 2 5 10 2 5 1022 5 1032 5 104 Vos. Drain-to-Source , Avalanche Rated I D G \ 1- ¡V * S Description Third Génération HEXFETs from International Rectifier , Energy © 470 mJ Iar Avalanche Current © 10 A Ear Repetitive Avalanche Energy © 9.6 mJ dv/dt Peak Diode Recovery dv/dt ® 3.5 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range "C ... | OCR Scan |
6 pages, |
B14A B14A diode IRFIP450 diode B14A IRFIP450 abstract |
| Abstract: Continuous Source Current (Body Diode) - - 20 A MOSFET symbol showing the / I integral reverse G-\ ¡*1 p-n junction diode. d s Ism Pulsed Source Current (Body Diode) © - - 80 VsD Diode Forward Voltage - - 2.0 , Diode Recovery dv/dt © 5.0 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range , junction temperature (See Figure 11) © Vdd=50V, starting Tj=25°C, L=1,9mH Rg=25Q, Ias=20A (See Figure 12 , 1 Vsd, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage ... | OCR Scan |
6 pages, |
IRFP240 IRFP240 abstract |
| Abstract: Current (Body Diode) - - -6.5 A MOSFET symbol showing the / I Integral reverse a\ |~1 p-n junction diode , © -6.4 A Ear Repetitive Avalanche Energy © 7.4 mJ dv/dt Peak Diode Recovery dv/dt ® -5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C Soldering Temperature, for 10 seconds 300 (1,6mm , ) Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 2 5 1 2 5 10 2 5 102 2 -Vqs, Drain-to-Source , RejA Junction-to-Ambient (PCB mount)* - - 40 R&ja Junctlon-to-Ambient - - 62 * When mounted on 1 ... | OCR Scan |
6 pages, |
SMD-220 smd diode marking JJ smd diode marking JC IRF9630S AN-994 IRF9630S abstract |
| Abstract: Source Current (Body Diode) - - 8.1 A MOSFET symbol showing the / I integral reverse B\ [*1 p-n junction , © 300 mJ Iah Avalanche Current © 8.1 A Ear Repetitive Avalanche Energy © 7.4 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj Operating Junction and -55 to+150 Tstg Storage Temperature Range °C , Voltage Temp. Coefficient - 0.37 - V/°C Reference to 25°C, Id= 1 mA RdS(oji) Static Drain-to-Source , Vds=250V, Vgs=0V - - 250 Vds=200V, Vgs=0V, Tj=1 25°C Iqss Gate-to-Source Forward Leakage - - 100 nA ... | OCR Scan |
6 pages, |
IRF634 476C IRF634 abstract |
| Abstract: symbol showing the / I , integral reverse s-\ f*1 p-n junction diode. D ) S Ism Pulsed Source Current , Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage E < O ç 2 Q D 0 Nili 1 1 1 MIHI , Avalanche Current © 9.2 A Ear Repetitive Avalanche Energy © 6.0 mJ dv/dt Peak Diode Recovery dv/dt ® 5.5 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+175 °C Soldering Temperature, for 10 seconds 300 (1,6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Reue Junction-to-Case ... | OCR Scan |
6 pages, |
SMD-220 IRF520S DIODE smd marking A3 AN-994 IRF520S abstract |
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| Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital temperature as well as the temperature of a target IC with a diode junction, such as a Pentium II Processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature [Information as of 12-Aug-99] LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface www.datasheetarchive.com/files/national/htm/nsc02816-v3.htm |
National | 13/08/1999 | 11.74 Kb | HTM | nsc02816-v3.htm |
| Please enable Javascript in your browser. National P/N LM91 - Diode Input Digital the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC's die. A host can Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy +60°C to +100°C ±4°C (max LM91 Product Folder Diode Input Digital Temperature Sensor with Two-Wire Interface www.datasheetarchive.com/files/national/htm/nsc03535-v1.htm |
National | 16/08/2002 | 10.81 Kb | HTM | nsc03535-v1.htm |
| National P/N LM91 - Diode Input Digital Temperature Sensor with Two-Wire Interface [Obsolete] LM91 Product Folder Diode Input Digital Temperature Sensor with Two-Wire Interface senses its own temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy www.datasheetarchive.com/files/national/pf/lm91.html |
National | 17/02/2005 | 5.83 Kb | HTML | lm91.html |
| National P/N LM84 - Diode Input Digital Temperature Sensor with Two-Wire Interface - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description Features (Volt) 3.60 Quiescent Current (mA) 1 RemoteDiode ThermalSensor () 1 Interface target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy www.datasheetarchive.com/files/national/pf/lm84.html |
National | 17/02/2005 | 15.95 Kb | HTML | lm84.html |
| Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital Also: LM83 - LM83- LM83- LM83- LM83- Triple Remote Diode Input Temperature Sensing Generic P/N temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy +60°C to +100°C ±3°C (max www.datasheetarchive.com/files/national/htm/nsc04384-v1.htm |
National | 28/06/2001 | 20.14 Kb | HTM | nsc04384-v1.htm |
| Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode Supply Current 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Products > Analog - Thermal Management > LM84 LM84 Product Folder Diode www.datasheetarchive.com/files/national/htm/nsc03519-v1.htm |
National | 16/08/2002 | 20.3 Kb | HTM | nsc03519-v1.htm |
| Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital - Triple Remote Diode Input Temperature Sensing Generic P/N 84 General Description senses its own temperature as well as the temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required 1 mA (max) Local Temperature Accuracy ±1.0°C (typ) Remote Diode Temperature Accuracy www.datasheetarchive.com/files/national/htm/nsc02415-v5.htm |
National | 01/11/2002 | 22.03 Kb | HTM | nsc02415-v5.htm |
| Please enable Javascript in your browser. National P/N LM84 - Diode Input Digital SETS REMOTE DIODE SENSING Generic P/N 84 Contents General Description temperature of a target IC with a diode junction, such as a Pentium® II processor or a diode connected 2N3904 2N3904 2N3904 2N3904. A diode junction (semiconductor junction) is required on the target IC's die. A host can query the _Square] Local Temperature Accuracy ±1.0°C (typ) [Solid_Square] Remote Diode Temperature Accuracy +60°C to www.datasheetarchive.com/files/national/htm/nsc03189-v2.htm |
National | 14/09/2000 | 18.93 Kb | HTM | nsc03189-v2.htm |
| , current can flow through the middle of the source cell, across a forward biased P-N junction. In the "reverse" direction, the power HEXFET ® thus behaves like a P-N junction rectifier. The integral body Note AN-936 AN-936 AN-936 AN-936 (Page 1 of 9) Title: The Do's and Don'ts of Using MOS-Gated Transistors 1 due to the stray inductance in series with the anti-parallel diode. This is a significant inherently have built into them an integral reverse body-drain diode. The existence of this diode is www.datasheetarchive.com/files/international-rectifier/docs/wcd0000c/wcd00c08.htm |
International Rectifier | 06/10/1998 | 4.51 Kb | HTM | wcd00c08.htm |
| Please enable Javascript in your browser. National P/N LM86 - ±1°C Accurate, Remote Diode Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface Generic P/N 86 Date View Online Download Receive via Email LM86 ±1°C Accurate, Remote Diode and Download Receive via Email LM86 ±1°C Accurate, Remote Diode and Local Digital Temperature accurately determined using the LM86 as long as a dedicated diode (semiconductor junction) is available on www.datasheetarchive.com/files/national/htm/nsc02416-v5.htm |
National | 01/11/2002 | 18.96 Kb | HTM | nsc02416-v5.htm |