NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.9E-3 + NFS = 0.8E12 DELTA = 0.1 , 0 CGBO = 0 + NFS = 0.8E12 DELTA = 0.1 , 0 CGBO = 0 + NFS = 0.8E12 DELTA = 0.1 ... | Original |
6 pages, |
SUD45P03-15 Kappa Networks SUD45P03-15 abstract |
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| Abstract: RC 0.77 MJE 0.5 CJC 0.8e-12 VJC 68119 0.07e-12 0.01e-12 1.13e-9 0.85e-9 ... | Original |
1 pages, |
NE68119 NE68119 abstract |
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| Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68130 NE68130 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 ... | Original |
1 pages, |
NE68130 NE68130 abstract |
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| Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector NE68118 NE68118 Q1 LC CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 ... | Original |
1 pages, |
NE68118 NE68118 abstract |
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| Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68133 NE68133 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 ... | Original |
1 pages, |
NE68133 NE68133 abstract |
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| Abstract: 0 +TLEV = 1 BEX = 1.5 TCV = 1.65E3 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 ... | Original |
8 pages, |
Si5445DC PMOS MODEL PARAMETERS SPICE NTHS5445T1 85e4 135E 1100E eta mos AND8049/D AND8049/D abstract |
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| Abstract: 0 +TLEV = 1 BEX = 1.4 TCV = 3.95E3 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 ... | Original |
8 pages, |
Si5402DC Kappa Networks 330E NMOS MODEL PARAMETERS SPICE 25e5 AND8050/D NTHS55445T1 AND8050/D abstract |
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| Abstract: +TLEV = 1 BEX = 1.5 TCV = 2.8E3 +NFS = 0.8E12 DELTA = 0.1 , +NFS = 0.8E12 DELTA = 0.1 , +NFS = 0.8E12 DELTA = 0.1 ... | Original |
8 pages, |
Si5904DC PMOS MODEL PARAMETERS SPICE NTHD5904T1 Kappa Networks 240E AND8047/D AND8047/D abstract |
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| Abstract: 0 +TLEV = 1 BEX = 1.4 TCV = 3.9E3 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 , 0 +NFS = 0.8E12 DELTA = 0.1 ... | Original |
8 pages, |
Si5902DC NTHD5902T1 Kappa Networks 7E17 110E AND8051/D AND8051/D abstract |
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| Abstract: = 1.4 TCV = 3.95E3 +NFS = 0.8E12 DELTA = 0.1 , XJ = 0.5E6 KAPPA = 6E1 +ETA = 1E4 TPG = 1 +IS = 0 LD = 0 +CGSO = 0 CGDO = 0 CGBO = 0 +NFS = 0.8E12 , XJ = 0.5E6 KAPPA = 6E1 +ETA = 1E4 TPG = 1 +IS = 0 LD = 0 +CGSO = 0 CGDO = 0 CGBO = 0 +NFS = 0.8E12 ... | Original |
8 pages, |
AND8050/D NTHS5402T1 AND8050/D abstract |
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| Abstract: 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF ... | Original |
1 pages, |
NE68135 NE68135 abstract |
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| Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68139 NE68139 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185.0 1.02 15.0 0.055 1.77e-11 2.1 1.0 1.0 Infinity Infinity 0 2.0 0.6 12.0 3.7 1.2e-5 8.0 1.2e-12 0.77 0.50 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.750 0 0.50 14.0e-12 ... | Original |
1 pages, |
NE68139 NE68139 abstract |
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| Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG 0.001 pF NE68808 NE68808 CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx 0.7nH LB 0.7 nH CCE 0.45 pF CCBPKG 0.35 pF LEX 0.2 nH Repkg 0.15 ohm CCEPKG 0.2 pF Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 150.1 1 33.5 1.018 3.8e-15 1.502 12.3 1.019 3.5 0.06 3.5e-16 1.62 0.4 6 3.5 0.001 4.2 0.8e-12 0.71 0.38 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: NONLINEAR MODEL UPA802TC UPA802TC BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1, Q2 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1, Q2 0.56 0.2 0 0.75 0 0.5 5e-12 2 25 0.001 0 0.3e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current ... | Original |
2 pages, |
UPA802TC UPA802TC abstract |
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| *SPICE model for 5082-2810 *The parameters are for a single diode. Parameters also apply *to the individual diodes within multiple diode configurations. .SUBCKT d5082_2810 1 2 DCD1 1 2 DMOD .MODEL DMOD D(IS=1.1E-9, CJO=0.8E-12 8E-12 8E-12 8E-12, VJ=.6, BV=25, IBV=1E-5 + EG=0.69, N=1.08, RS=10, XTI=2, M=0.5) .ENDS www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/agilent_spice_files/schottky_diodes/d5082_2810.lib |
Spice Models | 29/07/2012 | 0.32 Kb | LIB | d5082_2810.lib |
| *May 21, 2007 *Doc. ID: 74729, S-71047 S-71047 S-71047 S-71047, Rev. A *File Name: Si5504BDC Si5504BDC Si5504BDC Si5504BDC_PS.txt and Si5504BDC Si5504BDC Si5504BDC Si5504BDC_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si5504BDC Si5504BDC Si5504BDC Si5504BDC D1 G1 S1 D2 G2 S2 X1 D1 G1 S1 Si5504N Si5504N Si5504N Si5504N X2 D2 G2 S2 Si5504P Si5504P Si5504P Si5504P .ENDS Si5504BDC Si5504BDC Si5504BDC Si5504BDC *N-CH .SUBCKT Si5504N Si5504N Si5504N Si5504N D G S M1 3 GX S S NMOS W=293675u L=0.25u M2 www.datasheetarchive.com/files/vishay/docs/74729/si5504bd.lib |
Vishay | 16/05/2007 | 3.03 Kb | LIB | si5504bd.lib |
| *Oct 19, 2009 *Doc. ID: 65523, ECN S09-2171 S09-2171 S09-2171 S09-2171, Rev. A *File Name: Si4532CDY Si4532CDY Si4532CDY Si4532CDY_PS.txt and Si4532CDY Si4532CDY Si4532CDY Si4532CDY_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si4532CDY Si4532CDY Si4532CDY Si4532CDY D1 G1 S1 D2 G2 S2 X1 D1 G1 S1 Si4532CDYN Si4532CDYN Si4532CDYN Si4532CDYN X2 D2 G2 S2 Si4532CDYP Si4532CDYP Si4532CDYP Si4532CDYP .ENDS Si4532CDY Si4532CDY Si4532CDY Si4532CDY *N-CH .SUBCKT Si4532CDYN Si4532CDYN Si4532CDYN Si4532CDYN D G S M1 3 GX S S NMOS W=573319u www.datasheetarchive.com/files/vishay/docs/65523/si4532cd.lib |
Vishay | 21/10/2009 | 2.91 Kb | LIB | si4532cd.lib |
| *Feb. 28, 2005 *Doc. ID: 75015, S-50232 S-50232 S-50232 S-50232, Rev. B *File Name: Si1555DL Si1555DL Si1555DL Si1555DL_PS.txt and Si1555DL Si1555DL Si1555DL Si1555DL_PS.lib *Dn Gn Sn Dp Gp Sp .SUBCKT Si1555DL Si1555DL Si1555DL Si1555DL 6 2 1 3 5 4 x1 6 2 1 Si1555N Si1555N Si1555N Si1555N x2 3 5 4 si1555P .ENDS Si1555DL Si1555DL Si1555DL Si1555DL *N-Ch .SUBCKT Si1555N Si1555N Si1555N Si1555N 4 1 2 M1 3 1 2 2 NMOS W=26939u L=0.5u M2 2 1 2 4 PMOS W=26939u L=1.5u R1 4 3 RTEMP 1300E-4 1300E-4 1300E-4 1300E-4 CGS 1 2 40E-12 40E-12 40E-12 40E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 TOX = 3E-8 + RS www.datasheetarchive.com/files/vishay/docs/75015/si1555dl.txt |
Vishay | 10/12/2005 | 2.62 Kb | TXT | si1555dl.txt |
| *Feb. 28, 2005 *Doc. ID: 78338, S-50232 S-50232 S-50232 S-50232, Rev. B *File Name: Si1551DL Si1551DL Si1551DL Si1551DL_PS.txt and Si1551DL Si1551DL Si1551DL Si1551DL_PS.lib *Dn Gn Sn Dp Gp Sp .subckt Si1551DL Si1551DL Si1551DL Si1551DL 6 2 1 3 5 4 x1 6 2 1 Si1551N Si1551N Si1551N Si1551N x2 3 5 4 si1551P .ENDS Si1551DL Si1551DL Si1551DL Si1551DL *N-Ch .subckt Si1551N Si1551N Si1551N Si1551N 4 1 2 M1 3 1 2 2 NMOS W=40394u L=0.50u M2 2 1 2 4 PMOS W=40394u L=0.80u R1 4 3 RTEMP 250E-3 250E-3 250E-3 250E-3 CGS 1 2 30E-12 30E-12 30E-12 30E-12 DBD 2 4 DBD * .MODEL NMOS NMOS ( LEVEL = 3 TOX www.datasheetarchive.com/files/vishay/docs/78338/si1551dl.lib |
Vishay | 25/11/2005 | 2.69 Kb | LIB | si1551dl.lib |
| *Oct 3, 2005 *Doc. ID: 77871, S-52018 S-52018 S-52018 S-52018, Rev. A *Dn Gn Sn Dp Gp Sp .SUBCKT Si5517DU Si5517DU Si5517DU Si5517DU 6 2 1 3 5 4 X1 6 2 1 Si5517N Si5517N Si5517N Si5517N X2 3 5 4 Si5517P Si5517P Si5517P Si5517P .ENDS Si5517DU Si5517DU Si5517DU Si5517DU *N-CH .SUBCKT Si5517N Si5517N Si5517N Si5517N 4 1 2 M1 3 1 2 2 NMOS W=485249u L=0.25u M2 2 1 2 4 PMOS W=485249u L=0.23u R1 4 3 RTEMP 16E-3 16E-3 16E-3 16E-3 CGS 1 2 400E-12 400E-12 400E-12 400E-12 DBD 2 4 DBD * .MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7E-8 + RS = 11E-3 11E-3 11E-3 11E-3 RD = 0 www.datasheetarchive.com/files/vishay/docs/77871/si5517du.txt |
Vishay | 07/10/2005 | 2.62 Kb | TXT | si5517du.txt |
| *Feb 13, 2006 *Doc. ID: 76265, S-60145 S-60145 S-60145 S-60145, Rev. B *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. *Dn Gn Sn Dp Gp Sp .SUBCKT Si7540DP Si7540DP Si7540DP Si7540DP 6 2 1 3 5 4 X1 6 2 1 Si7540N Si7540N Si7540N Si7540N X2 3 5 4 Si7540P Si7540P Si7540P Si7540P .ENDS Si7540DP Si7540DP Si7540DP Si7540DP *N-CH .SUBCKT Si7540N Si7540N Si7540N Si7540N 4 1 2 M1 3 1 2 2 NMOS W=999970u L=0.50u M2 2 1 2 4 PMOS W=999970u L=0.30u R1 4 3 www.datasheetarchive.com/files/vishay/docs/76265/si7540dp.txt |
Vishay | 16/02/2006 | 2.81 Kb | TXT | si7540dp.txt |
| *May 16, 2005 *Doc. ID: 78384, S-50836 S-50836 S-50836 S-50836, Rev. B *File Name: Si3586DV Si3586DV Si3586DV Si3586DV_PS.txt and Si3586DV Si3586DV Si3586DV Si3586DV_PS.lib *Dn Gn Sn Dp Gp Sp .SUBCKT Si3586DV Si3586DV Si3586DV Si3586DV 6 2 1 3 5 4 X1 6 2 1 Si3586N Si3586N Si3586N Si3586N X2 3 5 4 Si3586P Si3586P Si3586P Si3586P .ENDS Si3586DV Si3586DV Si3586DV Si3586DV *N-Ch .SUBCKT Si3586N Si3586N Si3586N Si3586N 4 1 2 M1 3 1 2 2 NMOS W=345253u L=0.25u M2 2 1 2 4 PMOS W=345253u L=0.50u R1 4 3 RTEMP 22E-3 22E-3 22E-3 22E-3 CGS 1 2 260E-12 260E-12 260E-12 260E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 TOX = 1.7E-8 + www.datasheetarchive.com/files/vishay/docs/78384/si3586dv.lib |
Vishay | 25/11/2005 | 2.56 Kb | LIB | si3586dv.lib |
| *Jan 2, 2006 *Doc. ID: 78451, S-52575 S-52575 S-52575 S-52575, Rev. B *File Name: Si4511DY Si4511DY Si4511DY Si4511DY_PS.txt and Si4511DY Si4511DY Si4511DY Si4511DY_PS.lib *Dn Gn Sn Dp Gp Sp .SUBCKT Si4511DY Si4511DY Si4511DY Si4511DY 6 2 1 3 5 4 X1 6 2 1 Si4511N Si4511N Si4511N Si4511N X2 3 5 4 Si4511P Si4511P Si4511P Si4511P .ENDS Si4511DY Si4511DY Si4511DY Si4511DY *N-Ch .SUBCKT Si4511N Si4511N Si4511N Si4511N 4 1 2 M1 3 1 2 2 NMOS W=1724931u L=0.25u M2 2 1 2 4 PMOS W=1724931u L=0.40u R1 4 3 RTEMP 1E-3 CGS 1 2 900E-12 900E-12 900E-12 900E-12 DBD 2 4 DBD * .MODEL NMOS NMOS ( LEVEL = 3 TOX = 4 www.datasheetarchive.com/files/vishay/docs/78451/si4511dy.lib |
Vishay | 09/01/2006 | 2.58 Kb | LIB | si4511dy.lib |
| *Oct 31, 2005 *Doc. ID: 76688, S-52295 S-52295 S-52295 S-52295, Rev. B *File Name: Si4500BDY Si4500BDY Si4500BDY Si4500BDY_PS.txt and Si4500BDY Si4500BDY Si4500BDY Si4500BDY_PS.lib .SUBCKT Si4500BDY Si4500BDY Si4500BDY Si4500BDY D G1 S1 G2 S2 X1 D G1 S1 Si4500N Si4500N Si4500N Si4500N X2 D G2 S2 Si4500P Si4500P Si4500P Si4500P .ENDS Si4500BDY Si4500BDY Si4500BDY Si4500BDY *N-Ch .SUBCKT Si4500N Si4500N Si4500N Si4500N D G S M1 3 G S S NMOS W=1184119u L=0.25u M2 S G S D PMOS W=1184119u L=0.40u R1 D 3 RTEMP 6E-3 CGS G S 760E-12 760E-12 760E-12 760E-12 DBD S D DBD * .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 + RS = 4 www.datasheetarchive.com/files/vishay/docs/76688/si4500bd.txt |
Vishay | 03/11/2005 | 2.55 Kb | TXT | si4500bd.txt |