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053SbOS

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1.5mm / 0.5cm2 Cu 1998-11-01 456 Semiconductor Group 053SbOS Qisomo 7Ö1 S IE M E N ... OCR Scan
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4 pages,
74.39 Kb

TEXT
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Abstract: Group 645 053SbOS D1SQ52 D1SQ52Ö 6T2 1998-11-01 ... OCR Scan
datasheet

4 pages,
87.18 Kb

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Abstract: : 80 us pulse test, lbs = 25V, 7] = 25 °C V 10 666 1246 E—09 ti 1 fiflD D ■ 053SbOS GOm^SV ... OCR Scan
datasheet

6 pages,
174.12 Kb

C67078-A1106-A2 A1106 TEXT
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Abstract: ÖÖD D 053SbOS Q O H m a b MSIEfí 88D 14912 ~ 5 ~ r - 3 ^ - / 3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings = 500 V Draln-source voltage Kis = 8,5 A Continuous drain current 4 Draln-source on-reslstance ^O S(on) a 0,6 a N-Channel Description Case FREDET with fast-recovery reverse diode, N-channei, enhancement mode Plastic package TO 238 AA with insulated metal base plate in accordance with JEDEC, compatible with TO 3; AMP plug-in connections. Approx. weight 21 g Ordering code ... OCR Scan
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6 pages,
330.84 Kb

NAD 140 TEXT
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Abstract: SIEMENS AKTIENGESELLSCHAF 47E D SIEMENS 053SbOS GG271Qb □ mSIEG X-MI-5 V super-red OLB 2600 yellow YLB 2700 green GLB 2800 light bars Package Dimensions in Inches (mm) FEATURES • Square Package • Mechanical barrier creating two isolated rectangular tight emitting areas • Uniform Light Emitting Area • Excellent ON/OFF Contrast • Choice of Three Colors • Categorized for Light Output • Yellow and Green Categorized for Dominant Wavelength • Panel or Legend ... OCR Scan
datasheet

1 pages,
44.67 Kb

YLB2700 OLB2600 GLB2800 TEXT
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Abstract: . Semiconductor Group 306 : m 053SbOS 0120305 142 ■ 1998-11-01 SIEMENS BAS 125 . • For ... OCR Scan
datasheet

5 pages,
82.68 Kb

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Abstract: erase and write Semiconductor Group 67 bOE D 053SbOS 004T42b 101 « S I E G SDA 3526-2 , -Bus Semiconductor Group 69 bOE J > m 053SbOS 004T45 004T45Ö TÖ4 W S I E G SDA 3526-2 SIEM ENS SIEMENS ... OCR Scan
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12 pages,
433.23 Kb

SDA 3526-2 TEXT
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Abstract: '‘ (ip) Semiconductor Group 1998-11-01 ■ 053SbOS DlSlflMT lb? SIEMENS ... OCR Scan
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7 pages,
121.91 Kb

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Abstract: LSPT672LO LED. 053SbOS 0D SS0 17 Ô04 1-116 SIEM ENS Grenzwerte Maximum Ratings Bezeichnung ... OCR Scan
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8 pages,
333.45 Kb

g0550 VPL06837 TEXT
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Abstract: (/D) parameter: tp = 80 ps parameter: tp = 80 ps, Semiconductor Group 335 053SbOS ... OCR Scan
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9 pages,
145.21 Kb

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Abstract: ) Transition frequency {/c = 0.5 A; VCE = 5 V; f = 35 MHz) fT | 200 | 200 | 200 | MHz F—10 2SC D ■ 053SbOS ... OCR Scan
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4 pages,
223.51 Kb

QQG4457 Q62702-D964 BD 202 transistors Q62702-D966 BD979 BD 976 BD975 BD977 T-33-29 TEXT
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Abstract: CAI I ESC D 053SbOS 0004734 2 S I E û ! BFW 93 NPN Silicon RF Broadband Transistor SIEMENS AKTIENÔESELLSCHAF - - design BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use as RF amplifiers up to the GHz range. 2,5*0,2 Not for n e w Type BFW 93 Ordering code Q62702-F365 Q62702-F365 M ax im u m ratings Collector-base voltage ... OCR Scan
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3 pages,
141.43 Kb

transistor bfw 83 transistor 2sc 546 GPA 76 bfw 10 transistor TRANSISTOR BFW 11 TEXT
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Abstract: current I cbo = /(7 a ) V B= V m C tE ax 1 >5 Semiconductor Group ' ■ 053SbOS G 1 5tn 7D ... OCR Scan
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6 pages,
113.87 Kb

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Abstract: 2SC D ■ 053SbOS GGQMHIB 4 mSIZG NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF :5C Epibase power darlington transistors (15 W) BD 861, BD 863, and BD 865 are monolithic silicon NPN epibase power darlington transistors with diode and resistors in a plastic package similar to TO 202. The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for a particularly high current gain. Together with BD 862, BD ... OCR Scan
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4 pages,
111.72 Kb

Q62702-D960 Q62702-D958 Q62702-D956 ms 102y BD861 T-33-29 TEXT
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