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053SbOS

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Abstract: SIEMENS AKTIENGESELLSCHAF 47E D SIEMENS 053SbOS GG271Qb â-ˇ mSIEG X-MI-5 V super-red OLB 2600 yellow YLB 2700 green GLB 2800 light bars Package Dimensions in Inches (mm) FEATURES • Square Package • Mechanical barrier creating two isolated rectangular tight emitting areas • Uniform Light Emitting Area • Excellent ON/OFF Contrast • Choice of Three Colors • Categorized for Light Output • Yellow and Green Categorized for Dominant Wavelength • Panel or Legend Mountable • Can be Mounted on ... OCR Scan
datasheet

1 pages,
44.67 Kb

YLB2700 OLB2600 GLB2800 datasheet abstract
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Abstract: CAI I ESC D 053SbOS 0004734 2 S I E Ă» ! BFW 93 NPN Silicon RF Broadband Transistor SIEMENS AKTIENĂ"ESELLSCHAF - - design BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use as RF amplifiers up to the GHz range. 2,5*0,2 Not for n e w Type BFW 93 Ordering code Q62702-F365 Q62702-F365 M ax im u m ratings Collector-base voltage ... OCR Scan
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3 pages,
141.43 Kb

bfw 10 transistor TRANSISTOR BFW 11 datasheet abstract
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Abstract: ) Transition frequency {/c = 0.5 A; VCE = 5 V; f = 35 MHz) fT | 200 | 200 | 200 | MHz F-10 2SC D â-  053SbOS ... OCR Scan
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4 pages,
223.51 Kb

QQG4457 Q62702-D964 BD979 Q62702-D966 BD977 BD975 QQ044SS T-33-29 QQ044SS abstract
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Abstract: CAI I ESC D â-  053SbOS 0004734 2 NPN Silicon RF Broadband Transistor ISIE6 = BFW 93 SIEMENS AKTIENGESELLSCHAF V^f-31-IS BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use as RF amplifiers up to the GHz range. 2,511,2 Type Ordering code BFW 93 Q62702-F365 Q62702-F365 0.9x0,2 '-0ÂŁ5J Approx. weight 0,3 g Dimensions in mm Maximum ratings Collector-base voltage Collector-emitter voltage ... OCR Scan
datasheet

3 pages,
64.38 Kb

transistor bfw 88 Q62702-F365 BFW 60 transistor 2sc 546 BFW93 datasheet abstract
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Abstract: 2SC D â-  053SbOS GGQMHIB 4 mSIZG NPN Silicon Darlington Transistors SIEMENS AKTIENĂ›ESELLSCHAF :5C Epibase power darlington transistors (15 W) BD 861, BD 863, and BD 865 are monolithic silicon NPN epibase power darlington transistors with diode and resistors in a plastic package similar to TO 202. The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for a particularly high current gain. Together with BD 862, BD ... OCR Scan
datasheet

4 pages,
111.72 Kb

Q62702-D960 Q62702-D958 Q62702-D956 ms 102y BD861 T-33-29 T-33-29 abstract
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Abstract: erase and write Semiconductor Group 67 bOE D 053SbOS 004T42b 101 « S I E G SDA 3526-2 , 2C-Bus Semiconductor Group 69 bOE J > m 053SbOS 004T45 004T45Ă- TĂ-4 W S I E G SDA 3526-2 ... OCR Scan
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12 pages,
433.23 Kb

SDA 3526-2 datasheet abstract
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Abstract: LSPT672LO LED. 053SbOS 0D SS0 17 Ă"04 1-116 SIEM ENS Grenzwerte Maximum Ratings Bezeichnung ... OCR Scan
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8 pages,
333.45 Kb

g0550 VPL06837 VPL06837 abstract
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Abstract: Aktiengesellschaft 156 M7E D â-  053SbOS 0G2bS5b 4 â- SIEG SIEMENS Ă‚KTIENGESELLSCHAF BSM 682F Electrical ... OCR Scan
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7 pages,
302.91 Kb

C67076-A1505-A2 BSM682F BSM662F BSM 15 GB 682F 55115 datasheet abstract
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Abstract: : 80 us pulse test, lbs = 25V, 7] = 25 °C V 10 666 1246 E-09 ti 1 fiflD D â-  053SbOS GOm^SV b ... OCR Scan
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6 pages,
174.12 Kb

C67078-A1106-A2 A1106 datasheet abstract
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Abstract: BSC D â-  053SbOS 00043L3 00043L3 4 MSIE6 - 1 1 "Il NPN Silicon Epibase Transistors ' ' BD 433 BD 435 SIEMENS AKTIENGESELLSCHAF 0-BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driverstages as well as for general AF applications. ... OCR Scan
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5 pages,
181.42 Kb

b 435 transistor BD 439 BD 440 NPN transistors BD441 D201 D203 D212 D217 transistor 433 Mhz D218 d285 D325 BO 410 transistor BD datasheet abstract
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Abstract: a&D D S IEM EN S fl235b O S 0Q 14474 & M S IE Ú A K TIE N G E S E L LS C H A F BUZ 14 Main ratings Draln-source voltage Continuous drain current Draln-source on-resistance l'os S o ^DS(on) 50 V 39 A 0 ,0 4 « N-Channel Description Case SIPMOS, N-channel, enhancement mode Metal case 3 A 2 in accordance with DIN 41872, or TO 204 AE (TO 3) in accordance with JEDEC. Approx. weight 12 g Ordering code C67078-A1000-A2 C67078-A1000-A2 Type S B U Z 14 Dimensions In mm Maximum rati ... OCR Scan
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6 pages,
314.69 Kb

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Abstract: Ă-Ă-D D 053SbOS Q O H m a b MSIEfĂ­ 88D 14912 ~ 5 ~ r - 3 ^ - / 3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings = 500 V Draln-source voltage Kis = 8,5 A Continuous drain current 4 Draln-source on-reslstance ^O S(on) a 0,6 a N-Channel Description Case FREDET with fast-recovery reverse diode, N-channei, enhancement mode Plastic package TO 238 AA with insulated metal base plate in accordance with JEDEC, compatible with TO 3; AMP plug-in connections. Approx. weight 21 g Ordering code ... OCR Scan
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6 pages,
330.84 Kb

NAD 140 datasheet abstract
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