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053SbOS

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Abstract: 1.5mm / 0.5cm2 Cu 1998-11-01 456 Semiconductor Group 053SbOS Qisomo 7Ã1 S IE M E N -
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Q62702-A1051 23SL05 D15D412 D1ED413
Abstract: Group 645 053SbOS D1SQ52Ã 6T2 1998-11-01 -
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Q62702-C825 BC517 EHP00153
Abstract: ÖÖD D 053SbOS Q O H m a b MSIEfí 88D 14912 ~ 5 ~ r - 3 ^ - / 3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings = 500 V Draln-source voltage Kis = 8,5 A Continuous drain current 4 Draln-source on-reslstance ^O S(on) a 0,6 a N-Channel Description Case FREDET with fast-recovery reverse diode, N-channei, enhancement mode Plastic package TO 238 AA with insulated metal base plate in accordance with JEDEC, compatible with TO 3; AMP plug-in connections. Approx. weight 21 g Ordering code -
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NAD 140 C67078-A1700-A2 B--13 88D14917
Abstract: : 80 us pulse test, lbs = 25V, 7] = 25 °C V 10 666 1246 Eâ'"09 ti 1 fiflD D â  053SbOS GOm^SV -
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C67078-A1106-A2 A1106 149S5
Abstract: SIEMENS AKTIENGESELLSCHAF 47E D SIEMENS 053SbOS GG271Qb â¡ mSIEG X-MI-5 V super-red OLB 2600 yellow YLB 2700 green GLB 2800 light bars Package Dimensions in Inches (mm) FEATURES â'¢ Square Package â'¢ Mechanical barrier creating two isolated rectangular tight emitting areas â'¢ Uniform Light Emitting Area â'¢ Excellent ON/OFF Contrast â'¢ Choice of Three Colors â'¢ Categorized for Light Output â'¢ Yellow and Green Categorized for Dominant Wavelength â'¢ Panel or Legend -
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OLB2600 YLB2700 GLB2800 GG271Q 2600/YLB 2700/GLB
Abstract: . Semiconductor Group 306 : m 053SbOS 0120305 142 â  1998-11-01 SIEMENS BAS 125 . â'¢ For -
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Q62702-D1316 Q62702-D1321 EHM7002 EHA07005 Q62702-D1322 EHA0700
Abstract: erase and write Semiconductor Group 67 bOE D 053SbOS 004T42b 101 « S I E G SDA 3526-2 , -Bus Semiconductor Group 69 bOE J > m 053SbOS 004T45Ö TÖ4 W S I E G SDA 3526-2 SIEM ENS SIEMENS -
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SDA 3526-2 Q67100-H5013
Abstract: 'â'˜ (ip) Semiconductor Group 1998-11-01 â  053SbOS DlSlflMT lb? SIEMENS -
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Q62702-F1144 900MH
Abstract: LED. 053SbOS 0D SS0 17 Ô04 1-116 SIEM ENS Grenzwerte Maximum Ratings Bezeichnung -
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g0550 LSPT672LO VPL06837 L01626 GG55D21 OHL02105 G055022 DG55D23
Abstract: (/D) parameter: tp = 80 ps parameter: tp = 80 ps, Semiconductor Group 335 053SbOS -
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Q67000-S215 E6327
Abstract: ) Transition frequency {/c = 0.5 A; VCE = 5 V; f = 35 MHz) fT | 200 | 200 | 200 | MHz Fâ'"10 2SC D â  053SbOS -
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Q62702-D964 Q62702-D966 BD975 BD977 BD 976 BD979 BD 202 transistors T-33-29 Q62702-D962 0004H2
Abstract: CAI I ESC D 053SbOS 0004734 2 S I E û ! BFW 93 NPN Silicon RF Broadband Transistor SIEMENS AKTIENÔESELLSCHAF - - design BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use as RF amplifiers up to the GHz range. 2,5*0,2 Not for n e w Type BFW 93 Ordering code Q62702-F365 M ax im u m ratings Collector-base voltage -
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TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83 D--06 00DM73
Abstract: current I cbo = /(7 a ) V B= V m C tE ax 1 >5 Semiconductor Group ' â  053SbOS G 1 5tn 7D -
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marking code E3t Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632
Abstract: 2SC D â  053SbOS GGQMHIB 4 mSIZG NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF :5C Epibase power darlington transistors (15 W) BD 861, BD 863, and BD 865 are monolithic silicon NPN epibase power darlington transistors with diode and resistors in a plastic package similar to TO 202. The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for a particularly high current gain. Together with BD 862, BD -
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Q62702-D956 Q62702-D958 Q62702-D960 BD861 BD865 ms 102y AKTIENGESELLSCHAF-BD865 QQG441
Abstract: CAI I ESC D â  053SbOS 0004734 2 NPN Silicon RF Broadband Transistor ISIE6 = BFW 93 SIEMENS AKTIENGESELLSCHAF V^f-31-IS BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use as RF amplifiers up to the GHz range. 2,511,2 Type Ordering code BFW 93 Q62702-F365 0.9x0,2 '-0£5J Approx. weight 0,3 g Dimensions in mm Maximum ratings Collector-base voltage Collector-emitter voltage -
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BFW93 BFW 72 transistor bfw 88 BFW 60 0GG473S Q00M73
Abstract: Group 1.8GHz VCE = Parameter 1637 053SbOS 0 12 50 3^ ÌSf l 1998-11-01 SIEMENS BFR -
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Q62702-F1488 D122034 D15203
Abstract: (olf) - 330 430 ff - 110 140 Siemens Aktiengesellschaft 156 M7E D â  053SbOS 0G2bS5b 4 â SIEG -
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C67076-A1505-A2 55115 682F BSM 15 GB BSM662F BSM682F T-Z5-01 SIM00239
Abstract: Parameter: 7, = - 55. + 150 °C 053SbOS Semiconductor Group IbT 103 V BTS 131 SIEM ENS -
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BTS131 C67078-A5002-A4
Abstract: Permissible operating range MH2/C = '(VcE);(rcaâ'žÂ»125'C) 2259 G-l* 943 ESC D â  053SbOS QOQMaqa T 1SIE6 -
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Q62702-F65 Q62702-F66 k 942 K942 N 2904 ic 2904 N2905 2904 d VCC-10V C-30V
Abstract: BSC D â  053SbOS 00043L3 4 MSIE6 - 1 1 "Il NPN Silicon Epibase Transistors ' ' BD 433 BD 435 SIEMENS AKTIENGESELLSCHAF 0-BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driverstages as well as for general AF applications -
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transistor d325 TRANSISTOR BD 437 transistor BD 141 433 transistor BD PNP d217 siemens 433/BD 435/BD 437/BD 439/BD 441/BD Q62902-B63
Abstract: 'â'˜ (ip) Semiconductor Group 1998-11-01 â  053SbOS DlSlflMT lb? SIEMENS -
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681AE BUZ14 C67078-A1000-A2 0Q1447
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