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0440K

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Abstract: 1S311 selects 0-640K 0-640K, 1M-1384M 1M-1384M 100 selects 0-512K 0-512K 101 selects W40K 110 selects 0440K, 1M-2384M 1M-2384M 111 selects ... OCR Scan
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56 pages,
3987.19 Kb

80287 80286 instruction GC102 ibm schematics 80286 ict prc w4 J8AB 286 dram schematic AU-AIS 74ALS245 TTL 7475 TI HA 7406 gc1011 GC101 coa030 datasheet abstract
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Abstract: YS-1151DP/GP YS-1151DP/GP / YS-1151DP/GP YS-1151DP/GP / YS-115 YS-115 1DP/GP YS-1151DP/GP YS-1151DP/GP ; 4 315 YS-1151DG/GP YS-1151DG/GP RTW YS-1151DP/GP YS-1151DP/GP / YS-115 YS-115 1DP/GP YS-1151DP/GP YS-1151DP/GP ; 4 315 YS-1151DP/GP YS-1151DP/GP PFW 1151DP 1151DP 1151DP 1151DP 4 0-4-40kpa 5 0-20-200kpa 7 0-700-7000kpa 8 6 0-70-700kpa 0-2000-20000kpa J 4-20mA S 4-20mAHART added , B3 D E 1151DP 1151DP 1151DP 1151DP 4 0-4-40kpa 7 0-700-7000kpa 5 0-20-200kpa 8 ... Original
datasheet

3 pages,
105.77 Kb

YS-1151DP 1151DP 316SST YS-1151DP/GP YS-115 YS-1151DG/GP YS-1151DP/GP abstract
datasheet frame
Abstract: MHW710 MHW710 Tine RF Line UHF POWER MODULE . . . designed for Land Mobile Communications equipment in the UHF band. • Frequency Range - 400 to 470 MHz • Power Gain - Gp = 19.4 dB (Min) • Output Power - Pout ~ 13 W (Min) UHF POWER MODULE 13 W, 12.5 V 400-470 MHz ELECTRICAL CHARACTERISTICS IVS and Vsc set at 12 5 Vdc unless otherwise noted I Characteristic Symbol Min Max Unit Frequency Range (1) _ 400 470 MHz Output Power (Pjn = 150 mW) pout 13 - Watts Power Gain gP 19.4 - dB Efficiency ... OCR Scan
datasheet

3 pages,
142.56 Kb

vk200 FERROXCUBE VK200 100 ohm POT MHW710 MHW7102 MHW710-1 MHW710-2 datasheet abstract
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Abstract: MHW709 MHW709 Tlie RF Line UHF POWER MODULE . . . designed for Land Mobile Communications equipment in the UHF band. Frequency Range - 400 to 470 MHz • Power Gain - Gp= 18.8 dB (Min) • Output Power - Pout= 7.5 W (Mini UHF POWER MODULE 7.5 W, 12.5 V 400-470 MHz ELECTRICAL CHARACTERISTICS (Vs and Vj set at 12.5 Vdc unlessotherw.se noted.1 Characteristic Symbol Min Max Unit Frequency Range (1) _ 400 470 MHz Output Power (Pin = 100 mWI pout 7.5 - Watts Power Gain Gp 18.8 _ dB Efficiency ... OCR Scan
datasheet

3 pages,
154.19 Kb

MHW709 TCA 785 MHW709-1 MHW709-2 MHW709 abstract
datasheet frame
Abstract: SKKH 57/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 61 A Tc = 100 °C 45 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 A2s Tj = 130 °C 7200 A2s VRSM 1700 V VRRM 1600 V Chip IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor / Diode Modules sinus 180° 10 ms 10 ms VDRM 1600 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKH 5 ... Original
datasheet

4 pages,
227.09 Kb

datasheet abstract
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Abstract: SKKT 57B08 57B08 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 61 A Tc = 100 °C 45 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 A2s Tj = 130 °C 7200 A2s VRSM 900 V VRRM 800 V Chip IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor Modules sinus 180° 10 ms 10 ms VDRM 800 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKT 57B08 57B08 E G6 ... Original
datasheet

4 pages,
229.29 Kb

57B08 57B08 abstract
datasheet frame
Abstract: SKKT27B12E SKKT 27B12 27B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1300 V VRRM 1200 V IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor Modules sinus 180° 10 ms 10 ms VDRM 1200 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKT 27B12 27B12 E G6 ... Original
datasheet

4 pages,
226.02 Kb

27B12 27B12 abstract
datasheet frame
Abstract: SKKT 27B08 27B08 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 900 V VRRM 800 V IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor Modules sinus 180° 10 ms 10 ms VDRM 800 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKT 27B08 27B08 E G6 V ... Original
datasheet

4 pages,
226.02 Kb

27B08 27B08 abstract
datasheet frame
Abstract: SKKT 27B16 27B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1700 V VRRM 1600 V IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor Modules sinus 180° 10 ms 10 ms VDRM 1600 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKT 27B16 27B16 E G6 ... Original
datasheet

4 pages,
226.03 Kb

semikron thyristor skkt 27b16 e 27B16 27B16 abstract
datasheet frame
Abstract: SKKH 57/12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 61 A Tc = 100 °C 45 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 A2s Tj = 130 °C 7200 A2s VRSM 1300 V VRRM 1200 V Chip IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor / Diode Modules sinus 180° 10 ms 10 ms VDRM 1200 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKH 5 ... Original
datasheet

4 pages,
227.09 Kb

datasheet abstract
datasheet frame
Abstract: SKKH 57/08 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 61 A Tc = 100 °C 45 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 A2s Tj = 130 °C 7200 A2s VRSM 900 V VRRM 800 V Chip IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor / Diode Modules sinus 180° 10 ms 10 ms VDRM 800 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKH 57/0 ... Original
datasheet

4 pages,
227.1 Kb

datasheet abstract
datasheet frame
Abstract: skkt57b12e SKKT 57B12 57B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 61 A Tc = 100 °C 45 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 A2s Tj = 130 °C 7200 A2s VRSM 1300 V VRRM 1200 V Chip IT(AV) ITSM i2t ® SEMIPACK 1 Thyristor Modules sinus 180° 10 ms 10 ms VDRM 1200 (di/dt)cr (dv/dt)cr Tj = 130 °C A/µs 1000 V/µs -40 . 130 Tj SKKT 57B12 57B12 E G ... Original
datasheet

4 pages,
229.28 Kb

semikron thyristor skkt 57B12 57B12 abstract
datasheet frame