NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: resistance as a function of gate-source voltage; typical values. 03nc64 5.5 15 Tj = 25 °C; ID = ... | Original |
12 pages, |
BUK7720-55A 03nc65 M3D308 BUK7720-55A abstract |
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| Abstract: on-state resistance as a function of gate-source voltage; typical values. 03nc64 45 RDSon (m) 40 ... | Original |
13 pages, |
BUK7222-55A M3D300 BUK7222-55A abstract |
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| Abstract: on-state resistance as a function of gate-source voltage; typical values. 03nc64 45 RDSon (m) 40 ... | Original |
13 pages, |
BUK7720-55A M3D308 BUK7720-55A abstract |
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| Abstract: Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nc64 45 RDSon ... | Original |
13 pages, |
PHP54N06T M3D307 PHP54N06T abstract |
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| Abstract: ) Fig 10. Gate-source threshold voltage as a function of junction temperature 03nc64 45 RDSon ... | Original |
12 pages, |
PHP54N06T PHP54N06T abstract |
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| Abstract: 03aa32 5 VGS(th) (V) 03nc64 45 RDSon (m) 5.5 40 4 6 6.5 7 8 VGS (V) = ... | Original |
13 pages, |
BUK7222-55A BUK7222-55A abstract |
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| Abstract: a function of turn-on gate charge; typical values 03nc64 45 RDSon (m) 5.5 40 4 10 ... | Original |
13 pages, |
BUK7620-55A BUK7620-55A abstract |
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| Abstract: a function of turn-on gate charge; typical values 03nc64 45 RDSon (m) 5.5 40 4 10 ... | Original |
14 pages, |
BUK7520-55A BUK7520-55A abstract |
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| Abstract: voltage; typical values. 03aa28 45 RDSon (m) 40 2.2 a 2 03nc64 5.5 6 6.5 7 8 ... | Original |
15 pages, |
BUK7520-55A BUK7620-55A BUK7520-55A abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Power MOS FETs 2SK4174 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits Package Gate-source surrender voltage VGSS : ±25 V guaranteed Avalanche energy capability guaranteed: EAS > 216 mJ High-speed switching: tf = 90 ns (typ.) Code TO-220D-A1 Name Pin 1: Gate 2: Drain 3: Source Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo f ... | Original |
4 pages, |
k417 2SK4174 K4174 2002/95/EC 2002/95/EC abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Power MOS FETs 2SK4174 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits Package Gate-source surrender voltage VGSS : ±25 V guaranteed Avalanche energy capability guaranteed: EAS > 216 mJ High-speed switching: tf = 90 ns (typ.) Code TO-220D-A1 Name Pin 1: Gate 2: Drain 3: Source ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ... | Original |
4 pages, |
k417 K4174 2SK4174 2002/95/EC 2002/95/EC abstract |
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