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Part : CT1103AF180 Supplier : CIT Relay & Switch Manufacturer : Future Electronics Stock : - Best Price : $0.28 Price Each : $0.2950
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03af18

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RDSon 1 03af18 2 VGS = 3.2 V a (m) 60 3.6 V 1.5 40 4V 4.5 V 5V 1 10 Philips Semiconductors
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PMN40LN M3D302 MBK092 MBB076

sot669

Abstract: PH6325L values. VGS = 2.4 V RDSon 03af18 2 003aaa563 20 2.5 V 2.6 V a (m) 1.5 15
Philips Semiconductors
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PH6325L sot669 M3D748 MBL286

PHB63NQ03LT

Abstract: PHD63NQ03LT function of gate-source voltage; typical values. 03ai86 30 Tj = 25 °C RDSon 2 03af18 2
Philips Semiconductors
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PHP63NQ03LT PHB63NQ03LT PHD63NQ03LT PHP/PHB/PHD63NQ03LT MBK116 MBK091

PHP82NQ03LT

Abstract: PHB82NQ03LT current as a function of gate-source voltage; typical values. 03ai57 03af18 2 0.016 a
Philips Semiconductors
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PHP82NQ03LT PHB82NQ03LT PHD82NQ03LT PHP/PHB/PHD82NQ03LT MBK106

PHD101NQ03LT

Abstract: 16 Tj = 25 °C RDSon (m) 03af18 2 VGS (V) = 3.8 a 12 1.5 4 8 1 4.5
NXP Semiconductors
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PHD101NQ03LT

nq03lt

Abstract: NQ03LT-01 16 Tj = 25 °C RDSon (m) 03af18 2 VGS (V) = 3.8 a 12 1.5 4 8 1 4.5
NXP Semiconductors
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PHU101NQ03LT nq03lt NQ03LT-01

smd code marking HD SOT23

Abstract: MARKING CODE 16 transistor sot23 03af18 2.9 V 3.1 V 40 3.5 V 4.5 V 1 20 0.5 0 0 5 10 15 ID (A) 20 0 -60 0 60
NXP Semiconductors
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smd code marking HD SOT23 MARKING CODE 16 transistor sot23 PMV31XN

10937

Abstract: 1093 RDSon (m) 150 °C Tj = 25 °C 2.1 V 03af18 2 VGS = 2.9 V a 120 1.5 3.3 V 80
Philips Semiconductors
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10937 1093 PMN55LN

10939

Abstract: PMGD8000LN RDSon () 1 VGS = 2.5 V 03af18 2 a 3 1.5 3V 3.5 V 4V 5V 2 1 1 0.5
Philips Semiconductors
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PMGD8000LN 10939 MBD128 SC-88 MSA370 MSD901

PMF280UN

Abstract: ; typical values. 03an03 1 VGS = 1.8 V RDSon 03af18 2 2V a () 0.8 1.5 0.6 2.5 V
Philips Semiconductors
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PMF280UN M3D102 SC-70 MBC870

PHD78NQ03LT

Abstract: PHU78NQ03LT TrenchMOS logic level FET 003aaa761 30 VGS (V) = 03af18 2 3.6 a RDSon (m) 1.5 4
NXP Semiconductors
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PHU78NQ03LT PHD78NQ03LT PHU78NQ

PHP101NQ03LT

Abstract: PHB101NQ03LT Tj = 25 ºC 03af18 2 0.016 RDSon 1 a () 1.6 0.012 4V 0.008 1.2 4.5 V
Philips Semiconductors
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PHP101NQ03LT PHB101NQ03LT PHP/PHB/PHD101NQ03LT

SOT323 FET N

Abstract: PMF290XN values. 03am97 1 VGS = 2.5 V RDSon 03af18 2 3V a () 0.8 1.5 0.6 1 3.5 V
Philips Semiconductors
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PMF290XN SOT323 FET N

PHU77NQ03T

Abstract: Semiconductors N-channel TrenchMOS standard level FET 003aab304 10-3 03af18 2 a ID (A) min
NXP Semiconductors
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PHU77NQ03T

"thermal via" PCB D2PAK

Abstract: PHB101NQ03LT 3.8 V 03af18 2 a 12 1.5 4V 8 4.5 V 5V 1 10 V 4 0.5 0 0 0 20
Philips Semiconductors
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PHB/PHD101NQ03LT

PMN38EN

Abstract: tsop6 package on-state resistance as a function of drain current; typical values 03aj73 20 03af18 2 ID
Philips Semiconductors
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PMN38EN tsop6 package

MBB076

Abstract: PMZ270XN ; typical values 03am98 2.5 ID (A) 2.5 ID (A) VDS > ID × RDSon 03af18 2 a 2 Tj =
NXP Semiconductors
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PMZ270XN SC-101 JESD625-A

PHB96NQ03LT

Abstract: ; typical values. 03af13 VGS = 3.5 V Tj = 25 ºC 03af18 2 0.016 RDSon 1 a (â
Philips Semiconductors
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PHB96NQ03LT PHP/PHB/PHD96NQ03LT PHP96NQ03LT PHD96NQ03LT

PHB23NQ10LT

Abstract: 003aab115 25 03af18 2 ID (A) a 20 1.5 15 1 10 0.5 5 Tj = 175 °C 25 °C
Philips Semiconductors
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PHB23NQ10LT

PHD66NQ03LT

Abstract: PHB66NQ03LT 25 ºC 03af18 2 a VGS = 4.5 V 1.6 0.016 5V 1.2 0.012 6V 10 V 0.008
Philips Semiconductors
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PHP66NQ03LT PHB66NQ03LT PHD66NQ03LT 09284 PHP/PHB/PHD66NQ03LT

PHD*36n03lt

Abstract: sot428 . 03al90 40 Tj = 25 °C RDSon (m) 1 03af18 2 VGS = 3.4 V a 3.5 V 30 1.5 3.8
Philips Semiconductors
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PHD36N03LT PHD*36n03lt sot428

pmn45en

Abstract: gate-source voltage; typical values. 03aj72 60 03af18 2 3.6 V Tj = 25 °C RDSon 1
Philips Semiconductors
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pmn45en PMN45EN
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