NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| BUK7Y102-100B,115 | NXP Semiconductors | N-channel TrenchMOS standard level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" | 
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| IS0-2100ARH-Q | Intersil Corporation | IC 1.5 A HALF BRDG BASED MOSFET DRIVER, UUC16, GREEN, DIE-16, MOSFET Driver |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: They are available with either bipolar transistor output (DO), or the new DMO Series with MOSFET output , 24-280 .02-1.0 4-10 4.0 1.0 40 A0241R A0241R 24-280 .02-1.0 4-10 4.0 1.0 40 AS0241 AS0241 12-280 .01-1.5 4-10 4.0 1.0 , ) Current . 1 Sfeci!®! (APÌÌÌ D0061A D0061A 3-60 .02-1.0 3-9 3.0 1.0 5.0 D0061B D0061B 3-60 .02-1.0 1.7-9 1.7 0.8 5.0 ... | OCR Scan |
1 pages, |
mosfet ac switch Crydom solid state relay d0061a crydom 0210 transistor A0241 triac 410 crydom D0061 DM0065 D0061 AS0241 as0241r d0061b D0061A A0241 abstract |
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| Abstract: 2N2481 NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS îc (max) AMPS hFE @ Ic/ VCE min/max @ inA/V VcE(s»t) @IC/IB V @ 111 A/in A C , 0.2@150/15 12 100 2N3946 2N3946 40 0.2 50/150@10/l 0.2@10/1 4 250 2N3947 2N3947 40 0.2 100/300@ 10/1 0.2@10/1 4 300 ... | OCR Scan |
1 pages, |
2N3014 2N3013 2N2896 2N2895 2N3700 JANTX 2N2484 2N3946 2n3946 npn transistor 2N3947 2N2897 2N2484 JANTX 2N3013 JANTX 2N3302 2n3700a 2N2481 2N2484 2N2481 abstract |
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| Abstract: Dupline® Field- and Installationbus Modem Interface Type D 9091 0210 · 5 operation modes · , location. D 9091 0210 024 Type: Dupline Type no. Supply Supply Specifications Type Selection Supply Ordering no. 24 VAC 115 VAC 230 VAC D 9091 0210 024 D 9091 0210 115 D 9091 0210 230 , SUB-D Pin 2 Pin 3 Pin 7 Pin 8 Pin 20 500 VAC (rms) Contact or NPN transistor 5 VDC 50 uA 10 , (07.09.99) 1 D 9091 0210 General Specifications Power ON delay Indication for Supply ON (PWR ... | Original |
3 pages, |
SW01 Modem Interface Type D 9091 0210 datasheet abstract |
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| Abstract: Du line Modem Interface Type D 9091 0210 ® Fieldbus Installationbus · 5 operation , ® installations and a central location. Type Selection D 9091 0210 024 Type: Dupline® Type no. Supply Supply Specifications Supply Ordering no. 24 VAC 115 VAC 230 VAC D 9091 0210 024 D 9091 0210 115 D 9091 0210 230 No code module required Power supply Rated operational voltage , transistor 5 VDC 50 uA 10 3m 4 kVAC (rms) 500 VAC (rms) None Specifications are subject to ... | Original |
3 pages, |
SW01 Carlo Gavazzi Group relay datasheet abstract |
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| Abstract: MRA0610-18A MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. PACKAGE STYLE MRA .25 MAXIMUM RATINGS 2.5 A (CONT) IC 50 V VCES O O O MILLIMETERS MIN MAX 8.00 8.38 , 0.170 0.739 0.210 0.243 0.210 0.555 0.125 MAX 0.330 0.006 0.092 0.065 0.200 0.749 0.230 ... | Original |
1 pages, |
MRA0610-18A MRA0610-18A abstract |
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| Abstract: MRA0610-18A MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. PACKAGE STYLE MRA .25 MAXIMUM RATINGS IC 5.0 A (CONT) VCES 50 V TJ -65 °C to +200 °C TSTG 2.5 °C/W INCHES MIN O.351 0.003 0.078 0.055 0.170 0.739 0.210 0.243 0.210 0.555 0.125 MAX 0.330 ... | Original |
1 pages, |
RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-40A MRA0610-18A datasheet of ic 555 IC 555 MRA0610-18A abstract |
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| Abstract: TRANSISTOR 28 0.280" Pill Package 20 0.210" Pill Package 45 4 45 4 0.060 (1.524) 1 , BIPOLARICS, INC Part Number B20V1160B B20V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: · High · Common Base Package Configuration Reliability Gold Metallization Nitride Passivation · High Output Power 4 W @ 1.0 GHz · Diffused Ballast Resistors · High Gain Bandwidth , ) 2 0.11 (2.80) 0.210 (5.334) 0.280 DIA (7.11 DIA) 0.055 0.005 (1.40) (0.13 ) 0.045 ... | Original |
2 pages, |
B20V1160B B20V1160B abstract |
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| Abstract: BIPOLARICS, INC Part Number B30V180B B30V180B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: · Common Base Package Configuration · High Reliability Gold Metallization Nitride , PAGE 2 BIPOLARICS, INC Part Number B30V180B B30V180B SILICON MICROWAVE POWER TRANSISTOR 28 0.280" Pill Package 20 0.210" Pill Package 45 4 45 4 0.060 (1.524) 1 0.880 (22.35) 3 1 0.225 (5.71) 1.030 (26.16) 3 2 0.030 (0.762) 0.004 (0.102) 2 0.11 (2.80) 0.210 ... | Original |
2 pages, |
B30V180B B30V180B abstract |
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| Abstract: DATA SHEET CM4957 CM4957 PNP HIGH FREQUENCY SILICON TRANSISTOR TO-72 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CM4957 CM4957 is a Silicon PNP RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a , CM4957 CM4957 PNP HIGH FREQUENCY TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE A B DIMENSIONS INCHES , 0.030 0.76 D 0.170 0.210 4.32 5.33 E 0.500 12.70 F (DIA) 0.016 0.019 0.41 0.48 0.100 2.54 ... | Original |
2 pages, |
transistor TO-72 to 72 transistor CM4957 2N4957 transistor 45 f 122 CM4957 abstract |
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| Abstract: DATA SHEET MPS712 MPS712 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS712 MPS712 is a silicon PNP Darlington Transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage , (SEE REVERSE SIDE) R0 MPS712 MPS712 PNP DARLINGTON TRANSISTOR TO-92 PACKAGE - MECHANICAL OUTLINE , DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 ... | Original |
2 pages, |
MPS712 Darlington transistor to 92 MPS712 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| _2 BSP230 BSP230 BSP230 BSP230 P-channel enhancement mode vertical D-MOS transistor P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package Single P-channel 0.210 17000.0@10V 0.210 300 300 Single P-channel 12 - 300 V P-channel MOSFETs Single P-channel 0.210 17000.0@10V 12 - 300 V P BSP230 BSP230 BSP230 BSP230 P-channel enhancement mode vertical D-MOS transistor 17-Jun-97 Product www.datasheetarchive.com/files/philips/pip/bsp230_2-v1.html |
Philips | 14/02/2002 | 7.2 Kb | HTML | bsp230_2-v1.html |
| ! NEC Compound Semiconductor Devices Ltd. ! 20. August 2002 ! NE68718/2SC5185 NE68718/2SC5185 NE68718/2SC5185 NE68718/2SC5185 ! NPN Silicon Transistor ! Vce = 1 V Ic = 1 mA # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.60 0 .285 90.9 0.210 26.5 0.622 -56.0 1.60 0.558 -129.6 2.114 81.7 0.214 23.9 0.578 -61.4 1.80 0.536 -139.6 1.990 75.0 0.210 20.9 0.546 -67.1 2.00 0 www.datasheetarchive.com/download/30039185-772110ZC/low_biptrv04.zip (NE68718v1_p6-2p2_1_1.s2p) |
Spice Models | 29/07/2012 | 637.53 Kb | ZIP | low_biptrv04.zip |
| ! NEC Compound Semiconductor Devices Ltd. ! 20. August 2002 ! NE68718/2SC5185 NE68718/2SC5185 NE68718/2SC5185 NE68718/2SC5185 ! NPN Silicon Transistor ! Vce = 1 V Ic = 1 mA # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.60 0 .285 90.9 0.210 26.5 0.622 -56.0 1.60 0.558 -129.6 2.114 81.7 0.214 23.9 0.578 -61.4 1.80 0.536 -139.6 1.990 75.0 0.210 20.9 0.546 -67.1 2.00 0 www.datasheetarchive.com/download/6885988-772112ZC/nec_devicesv2.1.zip (NE68718v1_p6-2p2_1_1.s2p) |
Spice Models | 29/07/2012 | 4009.86 Kb | ZIP | nec_devicesv2.1.zip |
| ST | RF POWER TRANSISTORS THE LDMOST FAMILY Datasheet RF POWER TRANSISTORS THE LDMOST FAMILY SD56120 SD56120 SD56120 SD56120 Document Format Size Document Raw Text Format SD56120 SD56120 SD56120 SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N transistor designed for broadband commercial and industrial applications at frequencies up to 1 MIN. TYP. MAX. MIN. TYP. MAX. A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6873.htm |
STMicroelectronics | 20/10/2000 | 6.9 Kb | HTM | 6873.htm |
| ST | SILICON NPN POWER DARLINGTON TRANSISTOR Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 STX112 STX112 STX112 Document Format Size /10/2000 5 Raw Text Format STX112 STX112 STX112 STX112 SILICON NPN POWER DARLINGTON TRANSISTOR n silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 MIN. TYP. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6881-v1.htm |
STMicroelectronics | 03/10/2000 | 6 Kb | HTM | 6881-v1.htm |
| ST | RF POWER TRANSISTORS THE LDMOST FAMILY Datasheet RF POWER TRANSISTORS THE LDMOST FAMILY SD56120 SD56120 SD56120 SD56120 Document Format Size /11/1999 4 Raw Text Format SD56120 SD56120 SD56120 SD56120 RF POWER TRANSISTORS The LdmoST FAMILY source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband SD56120 SD56120 SD56120 SD56120 2/4 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.33 5.59 0.210 0.220 B 6.48 6 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6873-v1.htm |
STMicroelectronics | 13/10/2000 | 6.62 Kb | HTM | 6873-v1.htm |
| ST | SILICON NPN POWER DARLINGTON TRANSISTOR Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 STX112 STX112 STX112 Document Format Size Document Raw Text Format STX112 STX112 STX112 STX112 SILICON NPN POWER DARLINGTON TRANSISTOR n MONOLITHIC DARLINGTON The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington .58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6881.htm |
STMicroelectronics | 20/10/2000 | 6.24 Kb | HTM | 6881.htm |
| * PSpice Model Editor - Version 9.2 *$ * Discrete Bipolar Electrical Parameters * * KSC1173 KSC1173 KSC1173 KSC1173 NPN Epitaxial Silicon Transistor * Collector Current: IC=3A / Collector Dissipation: PC=10W (TC=25¡ÆC) * Complement to KSA473 KSA473 KSA473 KSA473 .MODEL KSC1173 KSC1173 KSC1173 KSC1173 npn ( + IS = 2.4547E-13 4547E-13 4547E-13 4547E-13 BF = 171.7 NF = 1 + BR = 20.4 NR .002 + IKR = 2.0006 RB = 17.83 RBM = 0.0631 + IRB = 0.0210 www.datasheetarchive.com/files/fairchild/pdfs/models actual/ksc1173.lib |
Fairchild | 22/08/2003 | 1.2 Kb | LIB | ksc1173.lib |
| * PSpice Model Editor - Version 9.2 *$ * Discrete Bipolar Electrical Parameters * * KSC1173 KSC1173 KSC1173 KSC1173 NPN Epitaxial Silicon Transistor * Collector Current: IC=3A / Collector Dissipation: PC=10W (TC=25¡ÆC) * Complement to KSA473 KSA473 KSA473 KSA473 .MODEL KSC1173 KSC1173 KSC1173 KSC1173 npn ( + IS = 2.4547E-13 4547E-13 4547E-13 4547E-13 BF = 171.7 NF = 1 + BR = 20.4 NR .002 + IKR = 2.0006 RB = 17.83 RBM = 0.0631 + IRB = 0.0210 www.datasheetarchive.com/files/fairchild/pdfs/models/ksc1173.txt |
Fairchild | 22/08/2003 | 1.2 Kb | TXT | ksc1173.txt |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STBV68 STBV68 STBV68 STBV68 Document Format Size Document Number Date Update Pages Portable Document Format 7234 29/09/2000 4 Raw Text Format STBV68 STBV68 STBV68 STBV68 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n MEDIUM . TYP. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7234.htm |
STMicroelectronics | 20/10/2000 | 6.57 Kb | HTM | 7234.htm |