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Part : 100135QC Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
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0135Q

Catalog Datasheet MFG & Type PDF Document Tags

1RF7501

Abstract: C202 diode International IQ R Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (
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OCR Scan
1RF7501 C202 diode 1265G IRF7501 C-200 C-201 C-202
Abstract: 4302571 0 0 5 4 7 5 â'˜Ã¯ LT? â  HAS à H R IS RFD12N06RLE, RFD12N06RLESM H A R U U RFP12N06RLE S E M , C O N D U C T O R Jan ary1994 u N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors (MegaFETs) Features Packages â'¢ 12A,60V â'¢ r DS(on) RFD12N06RLE (TO-251) TOP VIEW * 0.135Q 3 SOURCE â'¢ Electrostatic Discharge Rated DRAIN TAB' 3 DRAIN â'¢ UIS SOA Rating Curve (Single Pulse) â'¢ Design Optimized for 5V Gate Drive â'¢ Can be -
OCR Scan
T0-220AB 0D547 AN7254 AN-7260

DIODE SMD MARKING CODE gi

Abstract: appendix c package drawing 182 = 20V ^DS(on) = 0.135Q Parameter Max. Units ld @ TA = 25°C Continuous Drain Current, Vqs @ 4.5V
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DIODE SMD MARKING CODE gi appendix c package drawing 182 1265D

CLC424

Abstract: -i d dd 0 .0 3 3 ± 0 .0 1 3 i 0135±Q .Q 15[ 0 25 i 0.03 t- 1 H - if * 0 .0 1 8 h 0 .3 7 5 ± 0 .0 1 0
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OCR Scan
CLC424 180MH CLC424AI/AJ CLC424A8/AL/AM
Abstract: International ICR Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( -
OCR Scan
1266G IRF7503 C-206

MOSFET SMD N-Channel 30V 0.85A

Abstract: P-CHANNEL MOSFET SMD MARKING CODE YA portable electronics and PCMCIA cards. Absolute Maximum Ratings N-Ch P-Ch Vdss RpS(on) 30V 0.135Q -30V
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OCR Scan
IRF7509 MOSFET SMD N-Channel 30V 0.85A P-CHANNEL MOSFET SMD MARKING CODE YA MOSFET SMD N-Channel 30V 100A smd MARKING GG ld085 1270C

p-ch mosfet smd MARKING code A

Abstract: Diode SMD SJ 66A portable electronics and PCMCIA cards. Absolute Maximum Ratings N-Ch P-Ch Vdss rds(on) 20V 0.135Q -20V
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OCR Scan
IRF7507 p-ch mosfet smd MARKING code A Diode SMD SJ 66A smd marking code 21b p-ch mosfet smd MARKING code 1 A diode smd code F6 1269C

diode marking OX

Abstract: International IG R Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (
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OCR Scan
diode marking OX 5M-19 EIA-541
Abstract: PD - 9.1266G International I©R Rectifier IRF7503 HEXFET® Power MOSFET â'¢ Generation V Technology â'¢ Ultra Low On-Resistance â'¢ Dual N-Channel M O SFET â'¢ Very Small SOIC Package â'¢ Low Profile ( -
OCR Scan
S1Y14 5M-1982 EIA-481 4A5545E

ic 067b

Abstract: HIP2060 Voltage to 60V · r[js(O N ) · r[)s(ON) 0.135Q Max Per Transistor at Vq s = 15V 0.15Q Max Per Transistor at
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OCR Scan
HIP2060 ic 067b rs20e transistor P1M HIP2060AS1 HIP2060AS2 HIP2060AS3 TS-001A O-169
Abstract: P D - 9.1270F International l© R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile ( -
OCR Scan
SM-19B2 7355B
Abstract: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKYâ"¢ MOSFET and Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an 4 t i « i ( i Vdss = 30V ID K 5 3D D RDS(on)= 0.135Q HDD Schottky Vf= 0.50V Top View Description The FETKYâ"¢ family of co-packaged HEXFETs and Schottky diodes offer -
OCR Scan
F7501 0D2B023

Diode SMD SJ 66A

Abstract: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKYâ"¢ MOSFET and Schottky Diode â'¢ â'¢ â'¢ â'¢ â'¢ Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint or n n k A rrr n n k h d d a Voss = 20V S CEE g o r K ÃL RüS(on) = 0.135Q nno Schottky V f= 0.50V Top View Description The FETKYâ"¢ family of co-packaged HEXFETs and
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OCR Scan
5545S

IR 006

Abstract: IRF7521D1 International lö R Rectifier · · · · · Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint P D -9.1646 PRELIMINARY FETKYTM IRF7521D1 MOSFET and Schottky Diode V dss = 20 V R DS(on) = 0.135Q Schottky Vf= 0.50V Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize
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OCR Scan
IR 006 MICR08 A-481

142235

Abstract: MCCS142235TM °C. Temperature coefficient of resistance T q = 0.135Q /3C typical. SCSI TERM INATORS BR U 86 11 M O
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MCCS142235TM 142235 motorola 142235 MC34268 MCCS142235 AN1408/D BR1486

mccs142236

Abstract: at 35°C. Temperature coefficient of resistance Tq = 0.135Q/°C typical. MOTOROLA 4 MCCS142235
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mccs142236 MCCS142235/D 3PHX32017-1
Abstract: mode, Igatechg = f(Qp)- The typical gate charge for a 0.135Q P-channel power MOSFET is 40nC. This -
OCR Scan
LTC1147-3 LTC1147

d2396

Abstract: TRANSISTOR PNP B1443 Transistors Transistors Products Tables Surface mounting types M O S FET · Automatic mounting is possible : Products are housed in a package which supports automatic mounting. · 4V drive types : Direct drive from 1C allows reduction of components (elimination of buffer transistor). · Low ion-resistance : W e have obtained a low ion-resistance through optimization of the pattern design. 2SK2503 (ROHM : 60V, 5A) Rds m 0.135Q (Max.) Rds Previous product of same class (60V, 5A class) (o r
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d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A RK7002 3055E 2SK2715 T43TSA DTC143TSA DTA114TSA

027SS

Abstract: International IGR Rectifier · · · · · · · Generation V Technology Ultra Low On-Resistance Dual N and P Channel M OSFET Very Small SO IC Package Low Profile (
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OCR Scan
027SS 1269G C-223 C-224
Abstract: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKYâ"¢ MOSFET and Schottky Diode â'¢ â'¢ â'¢ â'¢ â'¢ Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint or n n k A rrr n n k h d d a Voss = 20V S CEE g o r K ÃL RüS(on) = 0.135Q nno Schottky V f= 0.50V Top View Description The FETKYâ"¢ family of co-packaged HEXFETs and -
OCR Scan
TTTRF2000 TTTRF4000 HP8753D
Abstract: = 20V ^DS(on) = 0.135Q Parameter Max. Units ld @ TA = 25°C Continuous Drain Current, Vqs @ 4.5V -
OCR Scan

FET K105

Abstract: 2SK1059 -i d dd 0 .0 3 3 ± 0 .0 1 3 i 0135±Q .Q 15[ 0 25 i 0.03 t- 1 H - if * 0 .0 1 8 h 0 .3 7 5 ± 0 .0 1 0
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OCR Scan
2SK1059 2SK1059-Z FET K105 K0236 k105 fet TC7641 VGS-10 O2SK1059-Z PWS10 1059-Z 2SKI059

st515

Abstract: ST515FRF3531LZ 4302571 0 0 5 4 7 5 â'˜Ã¯ LT? â  HAS à H R IS RFD12N06RLE, RFD12N06RLESM H A R U U RFP12N06RLE S E M , C O N D U C T O R Jan ary1994 u N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors (MegaFETs) Features Packages â'¢ 12A,60V â'¢ r DS(on) RFD12N06RLE (TO-251) TOP VIEW * 0.135Q 3 SOURCE â'¢ Electrostatic Discharge Rated DRAIN TAB' 3 DRAIN â'¢ UIS SOA Rating Curve (Single Pulse) â'¢ Design Optimized for 5V Gate Drive â'¢ Can be
Coilcraft Critical Products & Services
Original
ST515FRF3531LZ st515 515FRF3531 515FRF3532 ST515FRF3531LZST515FRF3532LZ 8753D ST492

E.78996

Abstract: E 78996 portable electronics and PCMCIA cards. Absolute Maximum Ratings N-Ch P-Ch Vdss RpS(on) 30V 0.135Q -30V
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OCR Scan
E78996 E.78996 E 78996 F 78996 ir e.78996 78996 diode IRKDL132-04S10 IRKDL132-06S10 IRKDL132-08S10 IRKDL132-10S10 IRKDL132-06S20 IRKDL132-08S20

smd marking LD

Abstract: IRF7503 International lö R Rectifier · · · · · Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint P D -9.1646 PRELIMINARY FETKYTM IRF7521D1 MOSFET and Schottky Diode V dss = 20 V R DS(on) = 0.135Q Schottky Vf= 0.50V Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize
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OCR Scan
smd marking LD 1266C 100JJS-