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00E-06

Catalog Datasheet MFG & Type PDF Document Tags

electronic concepts inc

Abstract: UP36BC0300 o CD L. -C t.00E+06 CD o 1.00E+06 1-00E+04 10 I 4.7MFD / 1500VDC + =i t t ^ t 1.0OE+O5 1 00E+06 1.00E+ 04 1.00E+05 t£0E+06V UP36 V l ll a l 1 1 «
-
OCR Scan
L98-135 UP36BC0300 electronic concepts inc 1J27 ELCISQ0031 UP36BF0200 UP36BJ0140 UP36BL0100

alps vco

Abstract: MQE001 Frequency Synthesizer Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 , Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 -10 -8 -6 -4 -2
Philips Semiconductors
Original
UMA1021M AN96083 DCS1800 PCS1900 alps vco MQE001 SMD-C5 tcxo 10mhz dbc alps dect data interface board TCXO 10MHZ low g sensitivity LM317LZ URAE8X814A

R&S smhu rf generator

Abstract: ALPS VCO Frequency Synthesizer Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 , Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 -10 -8 -6 -4 -2
Philips Semiconductors
Original
R&S smhu rf generator Dect 827 Toyocom Crystal Filters murata mqe001 smd tcxo 13,824mhz SMD-C4
Abstract: â'Deadtime vs. RDTâ' Deadtime vs. RDT 4,00E-06 3,50E-06 3,00E-06 tdead [µs] 2,50E-06 Tdead/-40°C 2,00E-06 Tdead/27°C Tdead/125°C 1,50E-06 1,00E-06 5,00E-07 0,00E+00 0 Siemens
Original
TLE6280GP P-DSO36-10 00E-07 Q67007-A9406

range gate pull off

Abstract: tle6280 Datasheet TLE6280GP Diagram "Deadtime vs. RDT" Deadtime vs. RDT 4,00E-06 3,50E-06 3,00E-06 tdead [µs] 2,50E-06 Tdead/-40°C 2,00E-06 Tdead/27°C Tdead/125°C 1,50E-06 1,00E-06 5
Infineon Technologies
Original
range gate pull off tle6280 dso36 can

alutronic

Abstract: IKCS22F60xx 0.1 0.05 0.02 0 1,00 0,50 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 , ,02012999 0,9508 0,14465394 0,0996 2,77031498 0,0179 1,8751 Cauer time in sec 0,00 1,00E-06 , /W 2,00 1,50 1,00 1,20 1,00 0,80 0,60 0,50 0,40 0,20 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1,00E+00 time in sec 1 , 1,00E-06 1,50 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1
Infineon Technologies
Original
alutronic IKCS22F60xx ikcs22f60 IGBT1 infineon igbt subcircuit IKCS22F60 PR170 00E-03 00E-02 00E-01
Abstract: combination of a detector with a minimum 1.00E+07 , 1,00E+06 CM E § 1,00E+05 1.00E+04 00E+03 00E+02 * 00E+01 -
OCR Scan

IC03b

Abstract: om5153 supply Application Note Idd (A) 1,00E-05 1,00E-06 1,00E-07 1,00E-08 1,00E-09 1,00E-10 1 1 , gain (dB) Imute (A) 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 40 20 0 -20 -40 -60 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0
Philips Semiconductors
Original
TEA1114A AN98007 IC03b om5153 82C113 tea1083 TEA111 OM5838

MESFET Application

Abstract: hitachi mosfet power amplifier audio application ,00E-09 1,01 3 22,0 0,680 1,11 1,00E-06 0 2,20 0,7 0,5 1 Zener2 Symbol Unit IS N , 1,11 5,00E-01 1,00E-06 5,91E-13 0 0,161 1,15 16,3 0 0,136 8,31 HVC132 1 1,82E+02 5,49E-13 1,11 5,00E-01 1,00E-06 1,44E-13 0 0,163 1,12 19,2 0 0,122 4,42 - 12 - HVC133 1 6,05E+01 1,30E-12 1,11 5,00E-01 1,00E-06 2,27E-15 0 0,149 1,07 11,4 0 0,640 9,34 HVM132WK 1 1,52E+02 8,03E-13 1,11 5,00E-01 1,00E-06 5,91E-13 0 0,161 1,15 16,3 0 0,136 9,31
Hitachi Semiconductor
Original
MESFET Application hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 Hitachi audio mosfet application hitachi mosfet audio application note DO-34 HVC202A HVU202A C2/C25 1SS174 HSM276S

4 QAM modulator demodulator modem

Abstract: QPSK modulation in digital broadcasting © Atmel Corporation 2000 1,00E-05 1,00E-06 1,00E-07 Atmel and the Atmel logo are registered
Atmel
Original
AT76C651B 4 QAM modulator demodulator modem QPSK modulation in digital broadcasting cable tv using internet block Diagram 64 QAM diagram AT76C651 DAVIC/DVB/ETS300 429/ITU-T 16QAM 256-QAM 00E-04
Abstract: higher harmonics of the signal to support signal reconstruction. -6 -8 -10 -12 -14 1,00E+06 1 NXP Semiconductors
Original
PUSB3F96 DFN2510A-10 IEC61000-4-2
Abstract: higher harmonics of the signal to support signal reconstruction. -6 -8 -10 -12 -14 1,00E+06 1 NXP Semiconductors
Original

1024 QAM modulator demodulator

Abstract: ATMEL 436 1,00E-05 1,00E-06 1,00E-07 1,00E-08 22 23 24 25 26 27 28 29 30
Atmel
Original
1024 QAM modulator demodulator ATMEL 436 64 QAM modulator demodulator 256 QAM modulator demodulator modem 3 way tap CATV 256QAM interpolation 00E-05 00E-08
Abstract: ) 200 1,00E-04 1E-12 1,00E-06 Current (A) 1,00E-07 1,00E-08 1,00E-09 150 130 A/W Laser Components
Original

TO220-5 footprint

Abstract: IPS5451 5v 0v 1,00E-05 Iout 1,00E-06 Rem : V load is negative during demagnetization 0
International Rectifier
Original
TO220-5 footprint IPS5451 IPS5451S SMD220 PD60159G IPS5451/IPS5451S

IPS5751S

Abstract: IPS5751 mode) R 5v 0v 1,00E-05 Iout 1,00E-06 Rem : V load is negative during
International Rectifier
Original
IPS5751S IPS5751 PD60197 IPS5751/IPS5751S 1E-04

tunnel diode GaAs

Abstract: jesd .00E+07 1 .00E+06 25º 50º 75º 1 00º 1 25º 150º 1 75º Temperature (ºC
Aeroflex / Metelics
Original
tunnel diode GaAs jesd MMA703 MMA705 MMA701 p-hemt

00E-12

Abstract: CHT-SNMOS80-TO39-T =80V). 1.80 1.60 On-state drain source resistance vs. temperature (VG=5V, VD=50mV). 1,00E-06 1
CISSOID
Original
CHT-SNMOS80-TO39-T 00E111 t225c CHT-SNMOS80 CHT-SNMOS-80 DS-090377 DS-090377-V2
Abstract: Wavelength (nm) Fig. 2: Dark Current vs. Reverse Voltage IG26X1000 IG26X250 1,00E-06 1,00E+01 Laser Components
Original
IG26-S IG26X-

IPS5451

Abstract: IPS5451S Vin = 0 V (sleep mode) R 5v 0v 1,00E-05 Iout 1,00E-06 Rem : V load is negative
International Rectifier
Original
PD60159-K

65WV12816ALL

Abstract: IS65WV12816ALL Frequency Synthesizer Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 , Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 -10 -8 -6 -4 -2
Integrated Silicon Solution
Original
IS65WV12816ALL IS65WV12816BLL 65WV12816ALL 55BA 65WV12816BLL IS65WV12816ALL/
Abstract: Frequency Synthesizer Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 , Application Note ICP(AVG) (A) 6,00E-06 5,00E-06 4,00E-06 3,00E-06 2,00E-06 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 -16 -14 -12 -10 -8 -6 -4 -2 Walsin Technology
Original
POE-D08-00-E-06 D21-00-E-03 POE-D08-00-E-01 YV501102X050 YV102102X060 YV102222X060
Abstract: â'Deadtime vs. RDTâ' Deadtime vs. RDT 4,00E-06 3,50E-06 3,00E-06 tdead [µs] 2,50E-06 Tdead/-40°C 2,00E-06 Tdead/27°C Tdead/125°C 1,50E-06 1,00E-06 5,00E-07 0,00E+00 0 Integrated Silicon Solution
Original
IS93C56A IS93C66A IS93C56A/66A IS93C56/66 IS93C56A-3PA3 IS93C56A-3GRA3
Abstract: o CD L. -C t.00E+06 CD o 1.00E+06 1-00E+04 10 I 4.7MFD / 1500VDC + =i t t ^ t 1.0OE+O5 1 00E+06 1.00E+ 04 1.00E+05 t£0E+06V UP36 V l ll a l 1 1 « Walsin Technology
Original

IS42S16160D-7T

Abstract: 0.1 0.05 0.02 0 1,00 0,50 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 , ,02012999 0,9508 0,14465394 0,0996 2,77031498 0,0179 1,8751 Cauer time in sec 0,00 1,00E-06 , /W 2,00 1,50 1,00 1,20 1,00 0,80 0,60 0,50 0,40 0,20 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1,00E+00 time in sec 1 , 1,00E-06 1,50 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1
Integrated Silicon Solution
Original
IS42S16160D-7T IS42S83200D IS42S16160D IS45S83200D IS45S16160D 256-MBIT

soic-8 200mil

Abstract: IS25C128 supply Application Note Idd (A) 1,00E-05 1,00E-06 1,00E-07 1,00E-08 1,00E-09 1,00E-10 1 1 , gain (dB) Imute (A) 1,00E-06 0,00E+00 -1,00E-06 -2,00E-06 -3,00E-06 -4,00E-06 -5,00E-06 -6,00E-06 40 20 0 -20 -40 -60 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0
Integrated Silicon Solution
Original
IS25C128 IS25C256 soic-8 200mil X101 X110 128K- 256K- IS25C128/256

capacitor 221 1kv

Abstract: 104 Ceramic Disc Capacitors 100v ,00E-09 1,01 3 22,0 0,680 1,11 1,00E-06 0 2,20 0,7 0,5 1 Zener2 Symbol Unit IS N , 1,11 5,00E-01 1,00E-06 5,91E-13 0 0,161 1,15 16,3 0 0,136 8,31 HVC132 1 1,82E+02 5,49E-13 1,11 5,00E-01 1,00E-06 1,44E-13 0 0,163 1,12 19,2 0 0,122 4,42 - 12 - HVC133 1 6,05E+01 1,30E-12 1,11 5,00E-01 1,00E-06 2,27E-15 0 0,149 1,07 11,4 0 0,640 9,34 HVM132WK 1 1,52E+02 8,03E-13 1,11 5,00E-01 1,00E-06 5,91E-13 0 0,161 1,15 16,3 0 0,136 9,31
-
Original
capacitor 221 1kv 104 Ceramic Disc Capacitors 100v 104 DISC capacitor 103 Ceramic Disc Capacitors 271 Ceramic Disc Capacitors 103 DISC CAPACITOR D08-00-E-06

M1017

Abstract: IS49NLS18160 © Atmel Corporation 2000 1,00E-05 1,00E-06 1,00E-07 Atmel and the Atmel logo are registered
Integrated Silicon Solution
Original
IS49NLS18160 M1017 IS49NLS93200 533MH IS49NLS9320018BI IS49NLS9320018BLI IS49NLS1816018BI

FBGA144

Abstract: IS49NLC36160-18BL higher harmonics of the signal to support signal reconstruction. -6 -8 -10 -12 -14 1,00E+06 1
Integrated Silicon Solution
Original
IS49NLC96400 FBGA144 IS49NLC36160-18BL IS49NLC18320 IS49NLC36160 16018BI IS49NLC3616018BLI IS49NLC9640025EBI
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