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00E-02

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: combination of a detector with a minimum 1.00E+07 , 1,00E+06 CM E § 1,00E+05 1.00E+04 00E+03 00E+02 * 00E+01 , c co 1 0 T3 CO 1.00E-01 1,00E-02 0,01 0,1 1 Distance [m] Figure 6. IrDA transmission -
OCR Scan
00E-02

alutronic

Abstract: IKCS22F60xx 0.1 0.05 0.02 0 1,00 0,50 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 , 1,00 0,50 1,00E-05 1,00E-04 1,00E-03 time in sec 1,00E-02 1,00E-01 Cth 3,64E-04 , ,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1,00E+00 time in sec 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 1,00E+00 time in sec 3,00 3,50 3,00 , 1,00E-06 1,50 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1
Infineon Technologies
Original
alutronic IKCS22F60xx ikcs22f60 IGBT1 infineon igbt subcircuit IKCS22F60 PR170 00E-03

5v ZENER DIODE

Abstract: TLE8110EE Load Dump Threshold: 40V 1,00E-01 ID Ampere 8,00E-02 6,00E-02 -40°C mA 25°C mA 125°C mA 150°C mA 4,00E-02 2,00E-02 44,7 44,4 44,1 43,8 43,5 43,2 42,9 42,6 42 , ,00E-02 VD Volt Figure 16 Characteristic curve of the used Zener diode over temperature Application
Infineon Technologies
Original
TLE8110EE 5v ZENER DIODE 3.2 v zener diode Diode zener 3a schottky diode application Zener Diode 3A
Abstract: ,00E+03 IG26X2000 IG26X1300 1,00E-05 1,00E+02 Shunt (kΩ) Dark Current (A) 2600 , ,00E-02 0 0,05 0,1 0,15 0,2 0,25 0,3 -40 -20 0 20 Reverse Voltage (V , 7 IG26X3000 IG26X2000 1,00E+02 IG26X1300 IG26X1000 1,00E+01 IG26X250 6 1,00E+00 Laser Components
Original
IG26-S IG26X-

u-79

Abstract: NE25339 pkgG lG 2 C = 0.21 CAP Cg1d C = 4.30e-Q2 W IND L gi L = 1 00e-02 A RES R12 R = 0.10 PORT Pgatel , ~ [ ~ C = 0.25 CAP Cg1s C = 1 00e-02 IND Ls L=3 CAP CpkgGIS C = 0.15 H PORT P4 port = 4
-
OCR Scan
NE25339 u-79 NE253 E25339-T1 NE25339U76 NE25339T1U76 NE25339U77

LIE-329

Abstract: LIM-262 1,00E-01 [W / cm² µm] Spectral Emissive Power (Black body) 227°C (500K) 1,00E-02 1,00E-03 , ) 400°C 1,00E-02 1,00E-03 Wavelength [µm] 1,00E-04 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 , M(10µm) = 50 mW/cm²µm 1,00E+00 1,00E-01 1,00E-02 [W / cm² µm] Spectral Emissive Power
Laser Components
Original
LIE-329 LIM-262 MIL-F-48616 LIE-302 LMM-244 LIM-122 00E-04

4 QAM modulator demodulator modem

Abstract: QPSK modulation in digital broadcasting -QAM real 1,00E-02 Evaluation Kit with Windows Software Environment The AT76C651B Evaluation Kit
Atmel
Original
4 QAM modulator demodulator modem QPSK modulation in digital broadcasting cable tv using internet block Diagram 64 QAM diagram AT76C651 QAM Modulator DAVIC/DVB/ETS300 429/ITU-T 16QAM 256-QAM 00E-05 00E-06

1024 QAM modulator demodulator

Abstract: ATMEL 436 with the software is the perfect tool for a live demonstration to cable operators. 1,00E-02 1
Atmel
Original
1024 QAM modulator demodulator ATMEL 436 64 QAM modulator demodulator 256 QAM modulator demodulator modem 3 way tap CATV 256QAM interpolation 00E-07 00E-08

R1124NS

Abstract: FAST SWITCHING THYRISTOR 1000A . 00E+02 1.00E+01 THs=85°C R1124NS16x-18x Issue 1 1. 00E+01 1. 00E05 1. 00E04 1. 00E03 1. 00E02 Pulse Width (s) Data Sheet. Types R1124NS16x to R1124NS18x Issue 1 1.00E+00
Westcode Semiconductors
Original
R1124NS FAST SWITCHING THYRISTOR 1000A R1124NS16 R1124NS18 VRM10V R1124 VDRM/100 R1124NS16L

J Fet marking 2 AW

Abstract: 10E-15 MODE=nonlinear T CAP _ Cg2s L _ C = 0.25 CAP Cg1s c g is c = i : 00e-02 RES . Rs R = 5.30 r IND C Ls
-
OCR Scan
J Fet marking 2 AW 10E-15 NE25339-T1
Abstract: : V2.0.0E02 FOAM-U12CTv2 SNMP Unit [allis] Wed Aug 4 10:26:58 2004 まãã'è¨­å®šãƒ , , then use the default config ä¾': _(n) id System : sys1 : V2.0.0E02 FOAM-U12CTv2 SNMP Unit _(s) id System : sys1 : V2.0.0E02 FOAM-U12CTv2 SNMP Unit Fujikura
Original
KSP84-0082-16-02 SPRO-00674-00 FOAM-U12CT

R0990LS08

Abstract: R0990LS . 00E+02 1.00E+01 1. 00E+01 THs=55°C 1.00E+00 THs=55°C di/dt=100A/µs R0990LS06x , 1.00E-03 1. 00E05 1.00E-02 1. 00E04 Pulse width (s) 1. 00E03 1. 00E02 Pulse width
Westcode Semiconductors
Original
R0990LS08 R0990 R0990LS R0990LS06 R0990LS06A

TO220-5 footprint

Abstract: IPS5451 definition (turn-on) Figure 4 - Switching times definition (turn-off) 1,00E-02 Vin = 5 V Dg Vcc IN
International Rectifier
Original
TO220-5 footprint IPS5451 IPS5451S SMD220 PD60159G IPS5451/IPS5451S

TEA1111A

Abstract: AN99036 Application Note Vln(V) 9 8 7 6 5 4 3 2 1 0 0,00E+00 2,00E-02 4,00E-02 Rslpe=10 Rslpe=15 6,00E-02 8,00E-02 1,00E-01 Rslpe=20 1,20E-01 Rslpe=27 1,40E-01 Rslpe
Philips Semiconductors
Original
TEA1111A AN99036 om5153 TEA1081 TEA1111 EMC SMD MICROPHONE TEA111 OM5889
Abstract: N E R G Y vs. 1 .0 0 E -04 1.00E -03 1 .00E-02 1 .00E-01 25 6 50 75 100 -
OCR Scan
2SK3324 D14203EJ1V0DS00 MP-88

C2631 transistor

Abstract: ql c307 . Frequency (27°C, TXLO = -10dBm) 850 -7.50E-02 LU CL S 7 00E-02 S < H 6.50E-02 IL) Å' § 6 00E-02 O
-
OCR Scan
SA900 C2631 transistor ql c307 T53 TCXO cmos 4004 lc 9202 TC289 900MH 836MH 1995S LQFP48

vip 504

Abstract: TS924 -80 0 -100 0 0,5 1 1,5 2 2,5 3 -10 1,00E+02 Output Voltage (V) 1
STMicroelectronics
Original
TS924 TS924A TSSOP14 TS924I vip 504 DIP14

vip 504

Abstract: TS924 -80 0 -100 0 0,5 1 1,5 2 2,5 3 -10 1,00E+02 Output Voltage (V) 1
STMicroelectronics
Original

IPS5451

Abstract: IPS5451S (turn-off) 1,00E-02 Vin = 5 V Dg Vcc IN 1,00E-03 Out + Gnd L Vin 14 V 1,00E-04
International Rectifier
Original
PD60159-J

IPS5751S

Abstract: IPS5751 resistive or an inductive load Figure 4 - Switching times definition (turn-off) 1,00E-02 Vin = 5 V
International Rectifier
Original
IPS5751S IPS5751 PD60197 IPS5751/IPS5751S 1E-04

IS25C32A

Abstract: IS25C64A 0.1 0.05 0.02 0 1,00 0,50 0,00 1,00E-06 1,00E-05 1,00E-04 1,00E-03 1,00E-02 , 1,00 0,50 1,00E-05 1,00E-04 1,00E-03 time in sec 1,00E-02 1,00E-01 Cth 3,64E-04 , ,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1,00E+00 time in sec 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 1,00E+00 time in sec 3,00 3,50 3,00 , 1,00E-06 1,50 1,00E-05 1,00E-04 1,00E-03 1,00E-02 1,00E-01 0,00 1,00E-06 1
Integrated Silicon Solution
Original
IS25C32A IS25C64A X101 X110 32K-BIT/64K-BIT IS25C32A/64A MO-153
Abstract: combination of a detector with a minimum 1.00E+07 , 1,00E+06 CM E § 1,00E+05 1.00E+04 00E+03 00E+02 * 00E+01 , c co 1 0 T3 CO 1.00E-01 1,00E-02 0,01 0,1 1 Distance [m] Figure 6. IrDA transmission Integrated Silicon Solution
Original
IS42S81600A IS42S16800A IS42S32400A 128-MBIT

IS25C08

Abstract: IS25C16 Load Dump Threshold: 40V 1,00E-01 ID Ampere 8,00E-02 6,00E-02 -40°C mA 25°C mA 125°C mA 150°C mA 4,00E-02 2,00E-02 44,7 44,4 44,1 43,8 43,5 43,2 42,9 42,6 42 , ,00E-02 VD Volt Figure 16 Characteristic curve of the used Zener diode over temperature Application
Integrated Silicon Solution
Original
IS25C08 IS25C16 384-BIT IS25C08/16 IS25C08-2P IS25C08-2G

IS49NLC18160

Abstract: 1,00E-01 [W / cm² µm] Spectral Emissive Power (Black body) 227°C (500K) 1,00E-02 1,00E-03 , ) 400°C 1,00E-02 1,00E-03 Wavelength [µm] 1,00E-04 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 , M(10µm) = 50 mW/cm²µm 1,00E+00 1,00E-01 1,00E-02 [W / cm² µm] Spectral Emissive Power
Integrated Silicon Solution
Original
IS49NLC18160 IS49NLC93200 IS49NLC36800 533MH 200-25BI IS49NLC93200-25BLI
Abstract: . 00E+02 1.00E+01 1. 00E+01 THs=55°C 1.00E+00 THs=55°C di/dt=100A/µs R0990LS06x , 1.00E-03 1. 00E05 1.00E-02 1. 00E04 Pulse width (s) 1. 00E03 1. 00E02 Pulse width -
OCR Scan
SSA-LXB20SRW
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