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-800A Datasheet

Part Manufacturer Description PDF Type
800A E-SWITCH SEALED SUB-MINIATURE PUSHBUTTON SWITCHES Original
800A0R5BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 0.5PF 250V NP0 0606 Original
800A0R6BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 0.6PF 250V NP0 0606 Original
800A0R7BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 0.7PF 250V NP0 0606 Original
800A100FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0606 Original
800A100JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0606 Original
800A101JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 5% NP0 0606 Original
800A120FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 12PF 250V 1% NP0 0606 Original
800A150JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 15PF 250V 5% NP0 0606 Original
800A180JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 18PF 250V 5% NP0 0606 Original
800A1R0BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 1PF 250V NP0 0606 Original
800A1R2BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 1.2PF 250V NP0 0606 Original
800A2R0BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 2PF 250V NP0 0606 Original
800A2R2BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 2.2PF 250V NP0 0606 Original
800A2R4BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 2.4PF 250V NP0 0606 Original
800A390FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 39PF 250V 1% NP0 0606 Original
800A3R0BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 3PF 250V NP0 0606 Original
800A3R3BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 3.3PF 250V NP0 0606 Original
800A3R9BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 3.9PF 250V NP0 0606 Original
800A4R7BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 4.7PF 250V NP0 0606 Original
Showing first 20 results.

-800A

Catalog Datasheet MFG & Type PDF Document Tags

800MR

Abstract: 120v AC to 12V dc transformer SELECTION GUIDE PUSH BUTTONS BULLETIN 800A, 800C, 800M Bul. 800MR Bul. 800A Bul. 800C Bul. 800MS Bul. 800MB Bulletin 800MR 22.5 mm Push Buttons Product Overview Bulletin 800MR/22.5 mm Push Buttons Table of Contents See below. 22.5 mm Mounting Hole Type 13 Oiltight Round Operators TABLE OF CONTENTS Page Description Specifications. 4 Push Buttons Momentary Contact, Non-Illuminated . 5 Momentary
Rockwell Automation
Original
120v AC to 12V dc transformer 800MR-N37 800M-XAK VDE 0660 iec 337 pt 800C-P02Z j50bb 800C-AS3 P07-P08 800C-AS7 800C-AW1 800C-AWT 800C-X20M
Abstract: *8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation. 2 , IC = 800A, VGE = 15V, Tj = 25°C*5 IC = 800A, VGE = 15V, Tj = 125°C*5 â'" 1.95 2.40 Volts â'" 2.25 â'" Volts IC = 800A, VGE = 15V, Tj = 150°C*5 â'" 2.35 â'" Volts VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C â'" 1.70 2.15 Volts (Chip) IC = 800A, VGE = 15V, Tj = 125°C IC = 800A, VGE = 15V, Tj = 150°C â'" 1.90 â'" Volts â Powerex
Original
CM800DY-24S
Abstract: CONVEX *8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation , = 0V VGE = VGES, VCE = 0V IC = 80mA, VCE = 10V IC = 800A, VGE = 15V, Tj = 25°C*5 IC = 800A, VGE = 15V, Tj = 125°C*5 IC = 800A, VGE = 15V, Tj = 150°C*5 IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C IC = 800A, VGE = 15V, Tj = 150°C VCC = 600V, IC = 800A, VGE = 15V IE = 800A, VGE = 0V, Tj = 25°C*5 IE = 800A, VGE = 0V, Tj = 125°C*5 IE = 800A, VGE = 0V, Tj = 150°C*5 IE = 800A, VGE = 0V Powerex
Original
Abstract: EB-800A Series Data Sheet GPS Engine Board EB-800A / EB-800AL EB-800A is a miniature 13 x15 , â'¢ Backward compatible with EB-500 â'¢ EB-800A w/ LNA, EB-800AL w/o LNA â'¢ EB-800A can used passive antenna â'¢ EB-800AL must be active antenna TRANSYSTEM INC. Ultimate EB An A+ supplier , Glonass dual system EB-800A enables better satellite coverage and superior position accuracy for your navigation need under dynamic conditions in areas with limited sky view like urban canyons. EB-800A is pin Transystem
Original
EB-800A EB-800AL EB500

BUK854-800 applications

Abstract: BUK854-800 datasheet MAX. gate 2 BUK854-800A emitter tab g collector 1 23 e LIMITING VALUES , Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A STATIC , Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A Zth j-mb / (K/W) 1E+01 30 BUK8Y4-800A IC / A 20 15 10 D= 1E+00 0.5 1E-01 9 20 , 30 BUK8Y4-800A IC / A 110 VGE / V = 15 100 90 10 80 20 70 60 50 40
Philips Semiconductors
Original
BUK854-800A BUK854-800 applications BUK854-800 datasheet BUK854-800 transistor igbt

igbt 800A

Abstract: BUK856-800A MAX. gate 2 BUK856-800A emitter tab g collector 1 23 e LIMITING VALUES , Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A STATIC , Product Specification Insulated Gate Bipolar Transistor (IGBT) 1E+01 BUK856-800A Zth j-mb / (K/W) 50 D= 1E+00 IC / A BUK8Y6-800A 20 15 10 40 9 0.5 30 0.2 0.1 , IC / A BUK8Y6-800A 110 VGE / V = 100 90 15 10 40 80 70 30 60 50 20
Philips Semiconductors
Original
BUK856-800A igbt 800A igbt philips transistor parameters

igbt 800A

Abstract: BUK856-800A MAX. gate 2 BUK856-800A emitter tab g collector 1 23 e LIMITING VALUES , Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A STATIC , Product Specification Insulated Gate Bipolar Transistor (IGBT) 1E+01 BUK856-800A Zth j-mb / (K/W) 50 D= IC / A BUK8Y6-800A 20 15 10 40 1E+00 9 0.5 30 0.2 0.1 , BUK8Y6-800A 110 VGE / V = 100 15 10 40 90 80 70 30 60 50 20 40 30
Philips Semiconductors
Original
Abstract: 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C*5 â'" 1.95 2.40 Volts (Terminal) IC = 800A, VGE = 15V, Tj = 125°C*5 â'" 2.25 â'" Volts IC = 800A, VGE = 15V, Tj = 150°C*5 â'" 2.35 â'" Volts VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C*5 â'" 1.70 2.15 Volts (Chip) Collector-Emitter Saturation Voltage IC = 800A, VGE = 15V, Tj = 125°C*5 â'" 1.90 â'" Volts â Powerex
Original

IGBT tail time

Abstract: BUK856-800A föregående meddelande ELFA artikelnr. 71-099-52 BUK856-800A IGBT TO220 Antal sidor: 08 Philips , 125 3.5 1.0 V A W V mJ SYMBOL c tab collector 3 MAX. gate 2 BUK856-800A , Insulated Gate Bipolar Transistor (IGBT) BUK856-800A STATIC CHARACTERISTICS Tmb = 25 °C unless , Bipolar Transistor (IGBT) 1E+01 BUK856-800A Zth j-mb / (K/W) 50 D= IC / A BUK8Y6-800A , ); parameter VGE Normalised Power Derating PD% 5 0 50 IC / A BUK8Y6-800A 110 VGE / V
Advanced Micro Devices
Original
IGBT tail time IGBT 3 pin

BUK444

Abstract: BUK444-800A converters, and in general purpose switching applications. PINNING - SOT186 PIN BUK444-800A/B , Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance -800A , Ths = 25 °C - - 55 - -800A 1.4 0.9 5.6 -800B 1.2 0.75 4.8 A A A 30 150 150 , Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B , ; Tj = 25 °C VDS = 800 V; VGS = 0 V; Tj =125 °C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK444-800A
Philips Semiconductors
Original
BUK444 BUK444-800A BUK444-800B BUK444-800A/B

BUK436-800A

Abstract: BUK436-800B , and in general purpose switching applications. PINNING - SOT429 (TO247) PIN BUK436W-800A/B , Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance -800A , - 55 - -800A 4.0 2.5 16 -800B 3.5 2.2 14 A A A 125 150 150 W °C °C , Product specification PowerMOS transistor BUK436W-800A/B STATIC CHARACTERISTICS Tmb = 25 °C , ; Tj =125 °C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK436-800A BUK436-800B ID = 1.5 A 2.1 -
Philips Semiconductors
Original
BUK436-800A BUK456-800A BUK436W-800A/B BUK436

CM800E2Z-66H

Abstract: 025-EA ) CM800E2Z-66H ¡IC . 800A ¡VCES , mA IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A , 1.40 - 0.024 - µs µC K/W K/W VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 IE = 800A, VGE = 0V IE = 800A, die / dt = ­1600A / µs IGBT FWDi -, 2/3 IF=800A IF=800A, dif/dt= ­1600A/µs -, 1/3 jmax T IEI
Mitsubishi
Original
025-EA 012K/W 024K/W
Abstract: =800V, IF=18A, diF/dt=800A/µs, Tj =25°C V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C V R=800V, IF=18A, diF/dt=800A , 24.4 25.3 1880 3200 3540 5.5 6.6 6.7 A nC - Peak reverse current V R=800V, IF = 18 A, di F/dt=800A/µs, T j=25°C V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C Reverse recovery charge V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C Reverse recovery softness factor V R=800V, IF Infineon Technologies
Original
IDP18E120 PG-TO220-2-2 D18E120

CM800E6C-66H

Abstract: CM800 . 800A q VCES . 3300V q Insulated Type q 1 , = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 125°C VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 800A, VGE = ±15V RG(off) = 2.5, Tj = 125°C, Ls = 100nH
Mitsubishi
Original
CM800E6C-66H CM800 mitsubishi The label version bipolar transistor 124 e

D12E120

Abstract: =800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C V R=800V, IF=12A, diF/dt=800A , 20.9 21.5 1200 1840 2025 5 5.8 5.9 A nC - Peak reverse current V R=800V, IF = 12 A, di F/dt=800A/µs, T j=25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Reverse recovery charge V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Reverse recovery softness factor V R=800V, IF
Infineon Technologies
Original
D12E120 IDP12E120 Q67040-S4389
Abstract: /dt=800A/µs, Tj=25°C V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C V R=400V, IF=9A, di F/dt=800A/µs, Tj , 5.5 5.7 A nC - Peak reverse current V R=400V, IF = 9A, diF/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery charge V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery softness factor V R=400V, IF=9A, di F/dt=800A/µs Infineon Technologies
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IDP09E60 Q67040-S4483 D09E60

DIODE B2

Abstract: FF800R1 saturation voltage IC = 800A, VGE = 15V, Tvj = 25°C max. 2,6 VCE sat IC = 800A, VGE = 15V, Tvj , loss per pulse Kurzschlußverhalten SC Data µs IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8, Tvj , 335 mWs ISC 3200 A LsCE 20 nH RCC´+EE´ 0,16 m IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8, Tvj = 25°C tf IC = 800A, VCE = 900V, VGE = 15V RG = 1,2, Tvj = 125°C, LS = 60nH IC = 800A, VCE = 900V, VGE = 15V RG = 1,8, Tvj = 125°C, LS = 60nH tP 10µsec, VGE 15V
Eupec
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DIODE B2 FF800R1 FF800R17KF6C

IF12A

Abstract: SMD MARKING CODE 2025 Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C V R=800V, IF=12A, diF/dt=800A/µs, Tj =150°C Symbol min. t rr I , - Peak reverse current V R=800V, IF = 12 A, di F/dt=800A/µs, T j=25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Reverse recovery charge V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs
Infineon Technologies
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IF12A SMD MARKING CODE 2025 IDB12E120 P-TO220-3 Q67040-S4385

D09E60

Abstract: =9A, di F/dt=800A/µs, Tj=25°C V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C V R=400V, IF=9A, di F/dt=800A/µs , 12.3 343 585 612 4 5.5 5.7 A nC - Peak reverse current V R=400V, IF = 9 A, diF/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery charge V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery softness factor V R=400V, IF=9A, di F/dt=800A
Infineon Technologies
Original
IDD09E60 PG-TO252-3-1 Q67040-S4379

D12E120

Abstract: IDB12E120 rr V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C - 150 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C - 215 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =150°C - 225 - Peak reverse current A I rrm V R=800V, IF = 12 A, di F/dt=800A/µs, T j=25°C - 17 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C - 20.9 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C - 21.5 - Reverse recovery charge nC Q rr V R=800V, IF=12A, diF/dt=800A/µs, Tj
Infineon Technologies
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PG-TO263-3-2 SMD MARKING CODE 800a power Diode 800V 12A
Abstract: =15V, ¡cm = 800 A, Vi_f = 15 V, Rq = 2,4 Q, iCM = 800A, vLF= 15 V, RG = 2,4 Q, iCM = 800A, vLF= 15 V, Rg = 2,4 Q, ìcm = 800a, vLF = 15 V, RG = 2,4Ã, vge = 15V, vge = 15 V, ic = 65 mA, ¡c = 65 mA, Vqe = 0 -
OCR Scan
34D32T7 125-C

800A

Abstract: =15V, ¡cm = 800 A, Vi_f = 15 V, Rq = 2,4 Q, iCM = 800A, vLF= 15 V, RG = 2,4 Q, iCM = 800A, vLF= 15 V, Rg = 2,4 Q, ìcm = 800a, vLF = 15 V, RG = 2,4Ã, vge = 15V, vge = 15 V, ic = 65 mA, ¡c = 65 mA, Vqe = 0
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OCR Scan

MO-207

Abstract: SST39LF200A and Write Operations ­ 3.0-3.6V for SST39LF200A/400A/800A ­ 2.7-3.6V for SST39VF200A/400A/800A · , KWord blocks · Fast Read Access Time ­ 45 and 55 ns for SST39LF200A ­ 55 ns for SST39LF400A/800A ­ 70 ns for SST39VF200A/400A/800A · Latched Address and Data · Fast Erase and Word-Program ­ , /800A and SST39VF200A/400A/ 800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash , compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V
Silicon Storage Technology
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SST39LF400A SST39LF800A SST39VF200A SST39VF400A SST39VF800A MO-207 SST39LF/VF200A

FZ800R12KS4

Abstract: EB-800A Series Data Sheet GPS Engine Board EB-800A / EB-800AL EB-800A is a miniature 13 x15 , Glonass dual system EB-800A enables better satellite coverage and superior position accuracy for your navigation need under dynamic conditions in areas with limited sky view like urban canyons. EB-800A is pin , â'¢ Backward compatible with EB-500 â'¢ EB-800A w/ LNA, EB-800AL w/o LNA â'¢ EB-800A can used , of RF microwave & GPS products 1 Ver 0.5 EB-800A Series Data Sheet Revision History Rev
Eupec
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FZ800R12KS4
Abstract: ) OVERLAP (Y) LEAD AND TERMINATION DIMENSIONS AND MATERIALS MATERIAL 800A T A Solderable Nickel , 800A W A Solder Plate L W T .055 +.015 -.010 .055 ±.015 (1.40 (1.40 ±0.38) +0.38 -0.25 , ATC 800 A Performance Data 800 A ESR vs. Frequency 1.00 ESR (Ohms) 0.10 800A - 1.0 pF 800A - 3.3 pF 800A - 10 pF 800A - 33 pF 800A - 100 pF 0.01 100 1000 10000 Frequency (MHz Burr-Brown
Original
OPA4684 SBOS240E 170MH 120MH

rogers cap

Abstract: /dt=800A/µs, Tj=25°C V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C V R=400V, IF=9A, di F/dt=800A/µs, Tj , 5.5 5.7 A nC - Peak reverse current V R=400V, IF = 9A, diF/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery charge V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C Reverse recovery softness factor V R=400V, IF=9A, di F/dt=800A/µs
American Technical Ceramics
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rogers cap RO4350

vf400a

Abstract: 39 vf200a CASE CODE SIZE CASE SIZE & TYPE W/T IS A TERMINATION SURFACE LENGTH (L) T 800A , ) W Y 800A WIDTH (W) .055 +.015 -.010 (1.40 +0.38 -0.25) Y A Solderable Nickel , Solderable Nickel Barrier TN 800A BODY DIMENSIONS Inches (mm) OUTLINES ATC ATC SERIES , 3 ATC 800 A Performance Data 800 A ESR vs. Frequency ESR (Ohms) 1.00 800A - 1.0 pF 800A - 3.3 pF 800A - 10 pF 800A - 33 pF 800A - 100 pF 0.10 0.01 100 1000 10000
Silicon Storage Technology
Original
vf400a 39 vf200a 800a5 VF800A SST39VF400A-70-4C-B2K 800A3 SST39LF200A/400A/800A SST39VF200A/400A/800A SST39LF/VF400A SST39LF/VF800A S71117

RO4350

Abstract: ) CM800E6C-66H ¡IC . 800A ¡VCES , 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C 4 4 4 4 4 , 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 125°C VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5, Tj = 125°C, Ls = 100nH VCC = 1650V, IC = 800A, VGE = ±15V RG(off) = 2.5, Tj = 125°C, Ls = 100nH VCC = 1650V, IC =
American Technical Ceramics
Original
Abstract: , vLF = 15 V, v L r = 15 V, J Rg = 2,4 fì, tV = 25°C ¡cm = 800A , Vce = 600 V, Vl f = 1 5 V , V -
OCR Scan
15CPC DDD2021

CM800E6C-66H

Abstract: igbt 800A =800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C V R=800V, IF=12A, diF/dt=800A , 20.9 21.5 1200 1840 2025 5 5.8 5.9 A nC - Peak reverse current V R=800V, IF = 12 A, di F/dt=800A/µs, T j=25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Reverse recovery charge V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Reverse recovery softness factor V R=800V, IF
Mitsubishi
Original
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