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-800A Datasheet

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800A E-SWITCH SEALED SUB-MINIATURE PUSHBUTTON SWITCHES
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2 pages,
138.05 Kb

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800A SERIES E-SWITCH IP-67 sealed sub-miniature pushbutton switch with a butt contact design
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3 pages,
365.82 Kb

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800AWSP8M2QE E-SWITCH SEALED SUB-MINIATURE PUSHBUTTON SWITCHES
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2 pages,
138.05 Kb

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800AWSP8M2QE E-SWITCH SWITCH PB SPDT VERT 1A SEALED
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3 pages,
365.82 Kb

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800AWSP8M2RE E-SWITCH SWITCH PB SPDT VERT .4VA SEALED
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3 pages,
365.82 Kb

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800AWSP8M6QE E-SWITCH SEALED SUB-MINIATURE PUSHBUTTON SWITCHES
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2 pages,
138.04 Kb

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800AWSP9M2QE E-SWITCH SEALED SUB-MINIATURE PUSHBUTTON SWITCHES
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2 pages,
138.04 Kb

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800AWSP9M6QE E-SWITCH SWITCH PB SPST R/A 1A SEALED
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3 pages,
365.82 Kb

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800AWSP9M6RE E-SWITCH SWITCH PB SPST R/A .4VA SEALED
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3 pages,
365.82 Kb

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800AWSP9M7QE E-SWITCH SWITCH PB SPST VERT R/A 1A
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3 pages,
365.82 Kb

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-800A

Catalog Datasheet Results Type PDF Document Tags
Abstract: Enhancement-Mode High Speed : tf= 0.30//s (Max.) (l£ = 800A) trr = 0.15//s (Max.) (Ip = 800A) Low Saturation Voltage : VCE (sat) = 2.70V (Max.) (IC = 800A) Outline : TOSHIBA 2-109E1A 2-109E1A See page 3 for the device , (sat) IC = 800A, V g e = 15V v c e = io v , VC E =0 Input Capacitance pF - 85200 - Cies f= 1MHz - , 0.60 - IC = 800A *on Switching Time MS VGE = ± 1 5 V - Turn-ofT Delay Time M(ofT) 0.30 0.60 R c = in Fall Time 0.15 0.30 tf (Note 1) 0.60 1.00 Turn-off Time tofT Forward Voltage I f = 800A, VGE = 0 2.30 ... OCR Scan
datasheet

4 pages,
73.72 Kb

MG800J1US51 2-109E1A MG800J1US51 abstract
datasheet frame
Abstract: Thyristor/Thyristor Module MTC600A/800A Thyristor/Diode Module MFC600A/800A FEATURES · High , CHARACTERISTICS 600A 600 18,000 19,188 1620 1528 800 to 1600 -40 to 125 800A 800 20,000 21,320 2000 1886 800 to , : 86-577-86928695 F:86-577-86926737 1 Thyristor/Thyristor Module MTC600A/800A Thyristor/Diode Module MFC600A/800A ON-STATE CONDUCTION PARAMETER Maximum average on-state current (thyristors) Maximum average , wave, T C 600A 600 800A 800 A UNITS TJ = TJ max Maximum value of on-state slope resistance rt ... Original
datasheet

3 pages,
277.8 Kb

wenzhou thyristor 800A MTC600A/800A MFC600A/800A MTC600A/800A abstract
datasheet frame
Abstract: Conditions VCE=3,300V, VGE=0V, Tj=25 VGE=±20V, VCE=0V, Tj=25 IC=800A, VGE=15V, Tj=125 VCE=10V, IC=800mA, Tj=25 VCE=10V, VGE=0V,f=100kHz, Tj=25 VCC=1,650V, IC=800A L=120nH RG=4.7 (3) VGE=±15V, Tj=125 -IC=800A, VGE=0V, Tj=125 VCC=1,650V, IF=800A (4) L=120nH, Tj=125oC 0.013 Junction to case 0.026 2 , , Tj=25 IF=800A, Tj=125 At Main terminal 3.4 (Terminal resistance:0.5m typical) IF =800A, VCC=1,650V ... Original
datasheet

1 pages,
152 Kb

MBL800E33D igbt 800A 800A DC diode IGBT-SP-03009 IGBT-SP-03009 abstract
datasheet frame
Abstract: - Dimension:mm * * * * 800ADC RDS(on)m800A , rain-ource n-esistance =10V,=800A - . . m rain-ource n-oltage =10V,=800A - . . fs =15V,=800A orward ransconductance , uty=50 =80 . - - . - . - - - =800A - =800A , 1.2 ID=800A 1 0.8 I D=400A 0.6 0.4 ID=200A 0.2 2V 0 0 0.5 1 1.5 2 ... Original
datasheet

5 pages,
112.54 Kb

datasheet abstract
datasheet frame
Abstract: Resistance SYMBOL VCBO VCE vebo MT-6008 MT-6008 300V 200V 10V 800A 500A 2100W 1200W - 6 5 to 200° C - 6 5 to , IC= 500A, VCE= 4V IC=800A, V C E= 4V V V V V V IC= 500A, lß= 1.5A IC=800A, l B= 7A IC=500A, V c e = 4 V IC=800A, V c e = 4V IC= 50mA V c b =300V , Rbe=o veb V be v CE(sus) ic e s 5 10 ... OCR Scan
datasheet

1 pages,
30.29 Kb

datasheet abstract
datasheet frame
Abstract: Bussmann® Telpower Fused Disconnect ® 15100 60 Volt, 70-800 Amps Dimensional Data 15100-401 15100 Fused Disconnect System For use with Telpower® Fuses Type TPL. Ampere Ratings: 70 to 800A Voltage Rating: 60Vdc UL Withstand Rating: 100,000A Agency Information: UL Recognized, File E97649 E97649 Catalog Numbers 15100-401 15100-602 15100-605 For use with TPL series fuses For use with TPL series fuses For use with TPL series fuses 70 to 400A 300 to 800A 300 to 800A (Short Studs ... Original
datasheet

1 pages,
65.73 Kb

datasheet abstract
datasheet frame
Abstract: VCES=600V ! " VCE(on) typ.=1.8V 10k @VGE=15V,IC=800A Benefits · · · Increased , 1.8 2.5 VGE=15V, IC=800A 1.9 V VGE=15V, IC=800A,TJ=125oC VGE(th) Gate , gfe Forward Ttansconductance 911 S VCE=25V, IC=800A ICES Collector - to - , Emitter Leakage Current 2.6 2.9 VFM 2.5 2000 V IF=800A , VGE=0V IF=800A , VGE=0V ,TJ=125oC nA VGE=±20V Dynamic Characteristics - TJ=125oC (unless otherwise ... Original
datasheet

2 pages,
84.97 Kb

IBGT diode IN 5409 datasheet abstract
datasheet frame
Abstract: Output Voltage Range (DC) Single Output Dual Output Triple Output +1.8V at 8.00A +2.5V at 8.00A +3.3V at 8.00A +5V at 8.00A ±5V at ±4.00A +12V at 3.33A ±12V at ±1.67A +5V/6.0A, +12V/0.4A, -12V/0 -12V/0.4A +15V at , TEW36H24K40 TEW36H24K40 +12V at 3.33A +15V at 2.67A +24V at 1.67A +12V at 3.33A +15V at 2.67A +24V at 1.67A +1.8V at 8.00A +2.5V at 8.00A +3.3V at 8.00A +5V at 8.00A +12V at 3.33A +15V at 2.67A +24V at 1.67A DC/DC Converter ... Original
datasheet

2 pages,
53.46 Kb

W040020 W040020 abstract
datasheet frame
Abstract: ) CM800E6C-66H CM800E6C-66H ¡IC . 800A ¡VCES , 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C 4 4 4 4 4 , 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 125°C VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5, Tj = 125°C, Ls = 100nH VCC = 1650V, IC = 800A, VGE = ±15V RG(off) = 2.5, Tj = 125°C, Ls = 100nH VCC = 1650V, IC = ... Original
datasheet

8 pages,
64.96 Kb

igbt 800A CM800E6C-66H CM800E6C-66H abstract
datasheet frame
Abstract: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs IGBTs V CEsat (C POWER SEMICONDUCTORS t. (ms ) (V) (V) (A) 15 15 15 12 24 Po (W) 125 125 85 85 125 type number BUK856-400IZ BUK856-400IZ BUK856-450IX BUK856-450IX BUK854-500IS BUK854-500IS BUK854-800A BUK856-800A O m technology Protected LZIGBT Protected IGBT IGBT Fast IGBT Fast IGBT package TO-220AB TO-220AB TO-22ÛAB TO-220AB TQ-220AB TQ-220AB < 400 450 500 800 800 2.2 1.8 2.0 3.5 3.5 10 8 6 0.4 0.4 ... OCR Scan
datasheet

1 pages,
10.57 Kb

datasheet abstract
datasheet frame
Abstract: CDLH-J2G42 CDLH-J2G42 :200A;300A;400A;500A;600A;700A;800A :4V;5V :1.0 :15s :5mA :150mW :±12/15VDC 12/15VDC ... Original
datasheet

1 pages,
120.64 Kb

CDLH-J2G42 12/15VDC CDLH-J2G42 abstract
datasheet frame
Abstract: CDLH-L1G12 CDLH-L1G12 :200A;300A;400A;500A;600A;700A;800A;900A;1000A :4V;5V :1.0 :15s :5mA :150mW :±12/15VDC 12/15VDC ... Original
datasheet

1 pages,
145.17 Kb

CDLH-L1G12 12/15VDC CDLH-L1G12 abstract
datasheet frame
Abstract: AC Current Transmitter Product Information Type:BDLH-Z2G41 BDLH-Z2G41 Norms:Range: 200A;300A;400A;500A;600A;700A;800A Output:5V Response Time:10ms Load:5mA Power Supply:Ą12/15VDC 12/15VDC Price: Descriptions: � ... Original
datasheet

1 pages,
107.6 Kb

BDLH-Z2G41 12/15VDC BDLH-Z2G41 abstract
datasheet frame
Abstract: DC Current Sensor Product Information Type:BDLH-Z2G42 BDLH-Z2G42 Norms:Range: 0~200A;300A;400A;500A;600A;700A;800A Output: 4V;5V Response Time: 10ms Load: 5mA Power Supply: ¡12/15V 12/15V DC Price: Descriptions: ... Original
datasheet

1 pages,
107.93 Kb

BDLH-Z2G42 12/15V BDLH-Z2G42 abstract
datasheet frame
Abstract: 800 A, Vi_f = 15 V, Rq = 2,4 Q, iCM = 800A, vLF= 15 V, RG = 2,4 Q, iCM = 800A, vLF= 15 V, Rg = 2,4 Q, ìcm = 800a, vLF = 15 V, RG = 2,4ß, vge = 15V, vge = 15 V, ic = 65 mA, ¡c = 65 mA, Vqe = 0 V, tVj = ... OCR Scan
datasheet

2 pages,
93.64 Kb

datasheet abstract
datasheet frame
Abstract: 800 A, Vi_f = 15 V, Rq = 2,4 Q, iCM = 800A, vLF= 15 V, RG = 2,4 Q, iCM = 800A, vLF= 15 V, Rg = 2,4 Q, ìcm = 800a, vLF = 15 V, RG = 2,4ß, vge = 15V, vge = 15 V, ic = 65 mA, ¡c = 65 mA, Vqe = 0 V, tVj = ... OCR Scan
datasheet

2 pages,
93.65 Kb

800A datasheet abstract
datasheet frame
Abstract: TIME IN SECONDS 100 0.001 0.05 0.1 .100A .125A .160A .200A .250A .315A .500A .630A .800A 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A 6.3A 10A 5 x 20mm Fast-Acting 216/226 Series 10 1 0.1 0.01 1 10 CURRENT IN AMPERES 100 500 ... Original
datasheet

1 pages,
25.56 Kb

630a 100A diode 226 datasheet abstract
datasheet frame
Abstract: C HEC-C2 HEC300-C2 HEC300-C2 HEC500-C2 HEC500-C2 HEC600-C2 HEC600-C2 HEC800-C2 HEC800-C2 HEC1000-C2 HEC1000-C2 300A 500A 600A 800A 1000A 1.5 4V5V 0-20mA4-20mA � �mV �mV 0.025%/ 10S di/dt=50A/礢 �V�V+24V � 25mA 3KV AC 50Hz 1 -10 +80 -25 +85 1+15V 2-15V 3Vout 40V UL94-V0 UL94-V0 UPS ... Original
datasheet

1 pages,
56.93 Kb

HEC300-C2 HEC500-C2 HEC600-C2 HEC800-C2 HEC1000-C2 UL94-V0 HEC300-C2 abstract
datasheet frame
Abstract: 1998 1 14 No. PD Room ' ( ) () ( ) () () () () () () module Line-up Vces Ic 150A 200A 300A 400A 600A 800A 1000A 1200A 1800A 3300V 2500V in 2000V 1700V 1200V in 1200V 600V No. EC-E707 EC-E707 ECN3067 ECN3067 VB Fault ... Original
datasheet

2 pages,
126.32 Kb

ECN3067 datasheet abstract
datasheet frame
Abstract: www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics flMOAHbie MOCTbl SMD 1A Kofl: B800S B800S MaKC. o6paTHoe CpeflHMM tok Hanpn^eHMe npm Ta = 40°C [B] 800 [A] 1 l/lMnynbCHbM tok t = 8,3 mc [A] 50 llporpaMMa nociaBOK KOMnaHMM TME ... OCR Scan
datasheet

1 pages,
71.47 Kb

b800s smd 1a datasheet abstract
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800A FD800R33KF2C FD800R33KF2C FD800R33KF2C FD800R33KF2C 800A FD800R33KF2C-K FD800R33KF2C-K FD800R33KF2C-K FD800R33KF2C-K 800A
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800A FD800R33KF2C FD800R33KF2C FD800R33KF2C FD800R33KF2C 800A FD800R33KF2C-K FD800R33KF2C-K FD800R33KF2C-K FD800R33KF2C-K 800A
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as of 2000-01-10 Latest information online BUK854-800A; Insulated Gate Bipolar BUK854-800A, subscribe to eNews. Description Fast-switching N-channel File size (kB) Datasheet BUK854-800A Insulated Gate Bipolar Transistor (IGBT buy online BUK854-800A 9340 026 80127 Standard marking * horizontal rail pack, (tube availability. Find similar products: BUK854-800A links to the similar products page containing
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as of 2000-01-11 Latest information online BUK444-800A, B; PowerMOS transistor products To be kept informed on BUK444-800A, B, subscribe to eNews. BUK444-800A, B PowerMOS transistor 01-Apr-93 Product Specification 7 67 Open package device status buy online BUK444-800A 9339 550 50127 Standard marking * horizontal : BUK444-800A, B links to the similar products page containing an overview of products that are similar in
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as of 2000-01-10 Latest information online BUK856-800A; Insulated Gate Bipolar BUK856-800A, subscribe to eNews. Description Fast-switching N-channel File size (kB) Datasheet BUK856-800A Insulated Gate Bipolar Transistor (IGBT buy online BUK856-800A 9340 026 90127 Standard marking * horizontal rail pack, (tube availability. Find similar products: BUK856-800A links to the similar products page containing
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Home >> Products & Solutions >> Product Range >> IGBT STANDARD LOW LOSS 800A FZ800R33KF2C FZ800R33KF2C FZ800R33KF2C FZ800R33KF2C 800A
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Home >> Products & Solutions >> Product Range >> IGBT STANDARD LOW LOSS 800A FZ800R33KF2C FZ800R33KF2C FZ800R33KF2C FZ800R33KF2C 800A
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as of 2000-01-11 Latest information online BUK444-800A, B; PowerMOS transistor products To be kept informed on BUK444-800A, B, subscribe to eNews. BUK444-800A, B PowerMOS transistor 01-Apr-93 Product Specification 7 67 Open package device status buy online BUK444-800A 9339 550 50127 Standard marking * horizontal : BUK444-800A, B links to the similar products page containing an overview of products that are similar in
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interactive selection guide BUK854-800A : Insulated Gate Bipolar Transistor (IGBT) BUK856-400 BUK856-400 BUK856-400 BUK856-400 IZ : Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-800A : Insulated Gate Bipolar
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800A 800A FZ800R12KF4 FZ800R12KF4 FZ800R12KF4 FZ800R12KF4
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