NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 20 15 5VpÂp 2.8VpÂp 10 2.8VpÂp 5 1.4VpÂp 5 1.4VpÂp 0 Output Voltage , 20 Output Voltage (Vp-p) 5VpÂp 10 2.8VpÂp 5 1G IQ = 20mA, R1 = 150, R2 = 220, R4 ... | Original |
3 pages, |
OPA660AP IN4007 diode data sheet Diodes In4007 DEM-OPA660-2GC diode IN4007 description IN4007 diode OPA660 IN4007 DATASHEET IN4007 DEM-OPA660-2GC abstract |
| Abstract: 5 10 2.8VpÂp 1.4VpÂp 0 Output Voltage (Vp-p) Output Voltage (Vp-p) 10 0.6VpÂp Â5 Â10 0.2VpÂp Â15 2.8VpÂp 5 1.4VpÂp 0 0.6VpÂp Â5 Â10 0.2VpÂp Â15 , 2.8VpÂp 10 5 1.4VpÂp 0 Output Voltage (Vp-p) 15 Output Voltage (Vp-p) 100M Frequency (Hz) Frequency (Hz) 0.6VpÂp Â5 Â10 0.2VpÂp Â15 Â20 5 0 2.8VpÂp 1.4VpÂp ... | Original |
3 pages, |
OPA660AP IN4007 diode data sheet IN4007 diode IN4007 description DEM-OPA660-1GC transistor IN4007 IN4007 DATASHEET DEM-OPA660-1GC abstract |
| Abstract: line terminated on both sides achieves a bandwidth of 460MHz at 1.4Vp-p and 375MHz at 2.8Vp-p. Table , Amplifier. 2 Rg R8 R 50 20 20 5Vp-p 5Vp-p 2.8Vp-p 10 Output Voltage (Vp-p) Output Voltage (Vp-p) 10 1.4Vp-p 0 0.6Vp-p Â10 Â20 2.8Vp-p 1.4Vp-p 0 0.6Vp-p Â10 Â20 , 2.8Vp-p 5Vp-p tRISE tFALL Current-Feedback Amplifier Figure 6 presents an offset-compensated , noninverting version achieves 514MHz at 1.4Vp-p and 317MHz at 2.8Vp-p. The results of the bandwidth ... | Original |
5 pages, |
OPA660 OPA2662 BUF601 AB-191 datasheet abstract |
| Abstract: line terminated on both sides achieves a bandwidth of 460MHz at 1.4Vp-p and 375MHz at 2.8Vp-p. Table , Amplifier. 2 Rg R8 R 50 20 20 5Vp-p 5Vp-p 2.8Vp-p 10 Output Voltage (Vp-p) Output Voltage (Vp-p) 10 1.4Vp-p 0 0.6Vp-p Â10 Â20 2.8Vp-p 1.4Vp-p 0 0.6Vp-p Â10 Â20 , 2.8Vp-p 5Vp-p tRISE tFALL Current-Feedback Amplifier Figure 6 presents an offset-compensated , noninverting version achieves 514MHz at 1.4Vp-p and 317MHz at 2.8Vp-p. The results of the bandwidth ... | Original |
6 pages, |
OPA660 BUF601 AB-191 OPA2662 cfa 326 datasheet abstract |
| Abstract: operation is used with full-scale video input signals from 0.350Vp-p to 2.8Vp-p. Figure 2a. describes the , The coarse gain of the input amplifier is determined from the following equation: VOUT = 2.8Vp-p = , 0.350Vp-p and less than 2.8Vp-p. Using a single external series resistor (see Figure 4.), the coarse gain , following equation: VOUT = 2.8Vp-p = VIN*(1+(523/(75+Rext), with all internal resistors having a 1% tolerance. 4 VIN NO CONNECT 75 3 0.01ç¤" VOUT = 2.8Vp-p 5 5k 2. Bypass all power supplies ... | Original |
9 pages, |
ADCDS-1405 12VA 10MPPS 1410 ADCDS-1410 ADCDS-1410 abstract |
| Abstract: full-scale video input signals from 0.350Vp-p to 2.8Vp-p. Figure 2a. describes the typical configuration for , amplifier is determined from the following equation: VOUT = 2.8Vp-p = VIN*(1+(523/75), with all internal , video input signal with an amplitude greater than 0.350Vp-p and less than 2.8Vp-p. Using a single , gain of the input amplifier can be determined from the following equation: VOUT = 2.8Vp-p = VIN*(1+ , 0.01ç¤" 523 VOUT = 2.8Vp-p 5 5k 2. Bypass all power supplies to ground with a 4.7礷 tantalum ... | Original |
9 pages, |
ADCDS-1405EX ADCDS-1405 12VA 100NS ADCDS-1405 abstract |
| Abstract: with fullscale video input signals from 0.350Vp-p to 2.8Vp-p. Figure 2a. describes the typical , gain of the input amplifier is determined from the following equation: VOUT = 2.8Vp-p = VIN*(1+(523/75 , applications using a video input signal with an amplitude greater than 0.350Vp-p and less than 2.8Vp-p. Using , 2.8Vp-p = VIN*(1+(523/(75+Rext), with all internal resistors having a 1% tolerance. 4 VIN NO CONNECT 759 3 0.01F 5239 VOUT = 2.8Vp-p 5 5k9 3. If using the suggested offset and ... | Original |
9 pages, |
ADCDS-1403EX ADCDS-1403 12VA 100NS 1403 28VP-P ADCDS-1403 abstract |
| Abstract: FEATURES APPLICATIONS q BANDWIDTH: 350MHz, 2.8Vp-p q BROADCAST/HDTV EQUIPMENT q HIGH OUTPUT , bandwidth at 2.8Vp-p output voltage, as well as a 2100V/us slew rate. The gain flatness of 0.05dB over a , CONDITIONS MIN TYP MAX UNITS FREQUENCY DOMAIN VO = 2.8Vp-p, Gain = +1V/V VO = 2.8Vp-p, Gain = +2V/V VO = 2.8Vp-p, Gain = +5V/V VO = 2.8Vp-p, Gain = +10V/V VO = 2.8Vp-p, Gain = Â1V/V VO = 2.8Vp-p, Gain = Â2V/V VO = 5.0Vp-p, Gain = +2V/V 340 350 260 210 360 330 240 MHz MHz MHz ... | Original |
15 pages, |
OPA623AU OPA623AP OPA623 CR3425 OPA623 abstract |
| Abstract: This mode of operation is used with full-scale video input signals from 0.350Vp-p to 2.8Vp-p. Figure , : Vout = 2.8Vp-p = Vin*(1 +(523/75), with all internal resistors having a 1% tolerance. Additional fine , and less than 2.8Vp-p. Using a single external series resistor (see Fig. 4.), the coarse gain of the , 2.8Vp-p = Vin*(1 +(523/(75+Rext), with all internal resistors having a 1% tolerance. ADCDS-1403 ADCDS-1403 Modes , Mode When applying inputs which are less than 2.8Vp-p, a coarse gain adjustment (applying an external ... | OCR Scan |
10 pages, |
ADCDS-1403MM ADCDS-1403MC ADCDS-1403 datasheet abstract |
| Abstract: CONDITIONS TYP TYP UNITS LARGE SIGNAL Closed-Loop Bandwidth (Â3dB) VO = 2.8Vp-p, Gain = +1V/V VO = 2.8Vp-p, Gain = +2V/V VO = 2.8Vp-p, Gain = +5V/V VO = 2.8Vp-p, Gain = +10V/V VO = 2.8Vp-p, Gain = Â1V/V VO = 2.8Vp-p, Gain = Â2V/V VO = 5.0Vp-p, Gain = +2V/V 220 200 170 110 150 160 , Time SLEW RATE Gain = +2V/V f = 10MHz, VO = 2.8Vp-p f = 30MHz, VO = 2.8Vp-p f = 50MHz, VO = 2.8Vp-p Gain = +2V/V VO = 2.8Vp-p, DC to 30MHz VO = 2.8Vp-p, DC to 100MHz Gain = +2V/V, 10% to 90% VO ... | Original |
19 pages, |
OPA622AU OPA622AP OPA622AD OPA622 book analog 22P20 datasheet abstract |
| Abstract: Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty PH1214-IOOEL PH1214-IOOEL 1.2 - 1.4 GHz Features _-_-. NPN Silicon Microwave Power Transisror Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter Rating Symbol Collector-EmitterVoltage V CES 75 V Emitter-Base ... | Original |
2 pages, |
PH1214-IOOEL PH1214-IOOEL abstract |
| Abstract: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package f Absolute Maximum Ratings at 25°C _ .137* 919 ~ (3.~8S.25) I UNLESS Electrical Characteristics .004 ... | Original |
2 pages, |
PH1214-4M 13MM datasheet abstract |
| Abstract: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetii: Metal/Ceramic Package .?90=.01c (2.29Z.25) . Absolute Maximum Ratings at 25°C Parameter Symbol Collector-Emitter Volta ... | Original |
2 pages, |
PH1214-2M 1.5 j63 PH1214-2M abstract |
| Abstract: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS Electrical Characteristics C-iTRW:SE `ICTED. T3LE?ANCES A?E Collector- ... | Original |
1 pages, |
TRANSISTOR Z4 214-6M 214-6M abstract |
| Abstract: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package Absolute Maximum Ratings at 25°C Parameter Symbol Electrical Characteristics at 25°C 1 Symbol Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current U ... | Original |
2 pages, |
PH2323-3 NPN TRANSISTOR Z4 datasheet abstract |
| Abstract: DRAWN:S.H.CHEN PAGE: 1 OF 3 Selection Guide P ar t N o . Dic e BLB101MGC BLB101MGC -28V-P Iv (m c ... | Original |
3 pages, |
BLB101MGC-28V-P DIODE NU BLB101MGC-28V-P abstract |
| Abstract: /2003 DRAWN: D.H.FANG PAGE: 1 OF 3 Selection Guide P ar t N o . Dic e BLB102MGC BLB102MGC -28V-P ... | Original |
3 pages, |
BLB102MGC-28V-P BLB102MGC-28V-P abstract |
| Abstract: BLF041MGC BLF041MGC -28V-P Iv (m c d ) V=28V L en s Ty p e MEGA GREEN (InGaAlP) Mi n . Ty p . 110 ... | Original |
3 pages, |
BLF041MGC-28V-P BLF041MGC-28V-P abstract |
| Abstract: 4mm FLANGE BASED LED LAMP PRELIMINARY SPEC Part Number: BLF041MGC-28V-P BLF041MGC-28V-P Features Mega Green Description Built-in current limiting resistor for direct application of The Mega Green source color devices are made with different across current. AlGaInP on GaAs substrate Light Emitting Diode. Long life. Low current, power savings. Low maintenance. Solid state, high vibration resistant. 28V internal resistor. RoHS compliant. Package Dimensions Notes: 1. All dime ... | Original |
4 pages, |
BLF041MGC-28V-P BLF041MGC-28V-P abstract |
| Abstract: 5mm FLANGE BASED LED LAMP PRELIMINARY SPEC Part Number: BLF052MGC-28V-P BLF052MGC-28V-P Features Mega Green Description Built-in current limiting resistor for direct application of The Mega Green source color devices are made with AlGaInP different across current. on GaAs substrate Light Emitting Diode. Long life. Low current, power savings. Low maintenance. Different color available. Solid state, high vibration resistant. 28V internal resistor. RoHS compliant. Package Dimen ... | Original |
4 pages, |
BLF052MGC-28V-P BLF052MGC-28V-P abstract |
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| * * * *PTVS28VP1UP * *NXP Semiconductors * *400 W Transient Voltage Suppressor * *VCL = 45,4V @ IPPM = 13,2A *VBR = 34,4V @ IR = 1mA *IRM = 0 * * *# .SUBCKT PTVS28VP1UP 1 2 * * The resistor R1 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * R1 1 2 1.5E+010 D1 1 2 PTVS28VP1UP * .MODEL PTVS28VP1UP D + IS = 1.2E-013 2E-013 2E-013 2E-013 + N = 1.1 + BV = 32.76 + IBV = 7.628E-010 628E-010 628E-010 628E-010 www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (PTVS28VP1UP.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *PTVS28VP1UP * *NXP Semiconductors * *400 W Transient Voltage Suppressor * *VCL = 45,4V @ IPPM = 13,2A *VBR = 34,4V @ IR = 1mA *IRM = 0 * * *# .SUBCKT PTVS28VP1UP 1 2 * * The resistor R1 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * R1 1 2 1.5E+010 D1 1 2 PTVS28VP1UP * .MODEL PTVS28VP1UP D + IS = 1.2E-013 2E-013 2E-013 2E-013 + N = 1.1 + BV = 32.76 + IBV = 7.628E-010 628E-010 628E-010 628E-010 www.datasheetarchive.com/download/59321892-596975ZC/57553.zip (PTVS28VP1UP.prm) |
NXP | 23/10/2012 | 98.93 Kb | ZIP | 57553.zip |
| * * * *PTVS28VP1UTP * *NXP Semiconductors * *High-Temperature 600W Transient Voltage Suppressor * *VCL = 45,4V @ IPPM = 13,2A *VBR = 32,8V @ IR = 1m * * *# .SUBCKT PTVS28VP1UTP 1 2 * * The resistor R1 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * R1 1 2 1.5E+010 D1 1 2 PTVS28VP1UTP * .MODEL PTVS28VP1UTP D + IS = 1.2E-013 2E-013 2E-013 2E-013 + N = 1.1 + BV = 32.76 + IBV = 7.628E-010 628E-010 628E-010 628E-010 www.datasheetarchive.com/download/59321892-596975ZC/57553.zip (PTVS28VP1UTP.prm) |
NXP | 23/10/2012 | 98.93 Kb | ZIP | 57553.zip |
| : 1.0 Vp-p, 75 ½ C : 0.28 Vp-p (burst), 75 ½ 3) Component (D-sub connector) Y : 1 www.datasheetarchive.com/files/hitachi/hdata/www_data/data/camera/hvd/hvd15.txt |
Hitachi | 13/11/1997 | 11.47 Kb | TXT | hvd15.txt |
| := 'VTRACC', read value of virtual register (VTR) #define AG_CB_WRITEVTR 28 // vp := 'VTRACC', write www.datasheetarchive.com/download/5811596-30000ZC/apnt_204_prg.zip (AGDI.H) |
ARM | 27/09/2012 | 3657.46 Kb | ZIP | apnt_204_prg.zip |
| ;* ; Copyright © [4/01/2000] Scenix Semiconductor, Inc. All rights reserved. ; ; Scenix Semiconductor, Inc. assumes no responsibility or liability for ; the use of this [product, application, software, any of these products]. ; Scenix Semiconductor conveys no license, implicitly or otherwise, under ; any intellectual property rights. ; Information contained in this publication regarding (e.g.: applicat www.datasheetarchive.com/files/ubicom/htdocs/source_files/e2/dtmf_det.src |
UBICOM | 04/01/2001 | 89.28 Kb | SRC | dtmf_det.src |
| ;* ; Copyright © [4/01/2000] Scenix Semiconductor, Inc. All rights reserved. ; ; Scenix Semiconductor, Inc. assumes no responsibility or liability for ; the use of this [product, application, software, any of these products]. ; Scenix Semiconductor conveys no license, implicitly or otherwise, under ; any intellectual property rights. ; Information contained in this publication regarding (e.g.: applicat www.datasheetarchive.com/files/ubicom/htdocs/source_files/vp/dtmf_det.src |
UBICOM | 24/11/2000 | 89.28 Kb | SRC | dtmf_det.src |
| *+sj# PI 28 www.datasheetarchive.com/files/fairchild/simulation-models/gtlp16612smt.inc |
Fairchild | 22/10/2012 | 204.03 Kb | INC | gtlp16612smt.inc |
| begin 644 4kefixhp.tar.Z M'YV0- F%'&A9@Y9 H7,BPH0 M*5N%3-^"!A!W]-S1=4'?[1Q KVJ^JOVJ!JQ: www.datasheetarchive.com/download/32843250-960428ZC/4kefixhp.uue |
Xilinx | 05/09/1996 | 1743.89 Kb | UUE | 4kefixhp.uue |
| begin 666 XSI_verilog.tar.Z M'YV06*8D^6*GC)PT;-Z0&@H3+@P#)LP www.datasheetarchive.com/download/43392718-960537ZC/ver_ex.uu |
Xilinx | 05/09/1996 | 4001.98 Kb | UU | ver_ex.uu |