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-18V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 64M x 16 166MHz H55S2G62MFP-60M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G22MFP-75M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 32M x 32 166MHz H55S2G32MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now (reduced page size) 133MHz H55S2G32MFP-75M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 64M x 16 166MHz SK Hynix
Original
H5MS1G22AFRE3M H5MS2G22MFR-J3M H9ccnnn DDR333 H55S2622JFR-60M H5MS2G62 166MH 133MH H55S1G62MFR-60M H55S1G62MFR-75M H55S1G62AFR-60M H55S1G62AFR-75M
Abstract: AVAIL. 1.8V 2Gb 512Mx4 DDR2 800 H5PS2G43AFR-S6C FBGA(60ball) 8Bank, 1.8V, CL5,6-6-6 Now DDR2 667 H5PS2G43AFR-Y5C FBGA(60ball) 8Bank, 1.8V, CL5,5-5-5 Now DDR2 800 H5PS2G83AFR-S6C FBGA(60ball) 8Bank, 1.8V, CL5,6-6-6 Now DDR2 667 H5PS2G83AFR-Y5C FBGA(60ball) 8Bank, 1.8V, CL5,5-5-5 Now DDR2 800 HY5PS1G431CFP-S5 FBGA(60ball) 8Bank, 1.8V, CL5,5-5-5 Now H5PS1G43EFR-S5C FBGA(60ball) 8Bank, 1.8V, CL5,5-5-5 Now HY5PS1G431CFP-Y5 FBGA Hynix Semiconductor
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H5TQ1G83BFR-H9C H5TQ1G63BFR-H9C H5TQ2G63BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H5TQ1G43BFR-H9C H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83TFR-H9C
Abstract: . +1.8V typ. 2.3mA typ. @High Gain 48A typ. @Low Gain EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm , =0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD5 VCTL3=0V, RF OFF - 48 85 A 1 ICTL1 VCTL1=1.8V - 5.5 8.5 A 2 ICTL2 VCTL2=1.8V - New Japan Radio
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NJG1133MD7 MLK0603 2140MH 885MH 1495MH 1860MH
Abstract: voltage "Low current consumption NJG1133MD7 +2.8V typ. +1.8V typ. 2.3mA typ. @High Gain Mode 48A , SYMBOL CONDITIONS IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA 1.5GHz Band High Gain mode IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA Operating current 5 IDD5 VCTL3=0V, RF OFF - New Japan Radio
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800MH MURATALQP03T0603 TDKMLK06030603 MURATAGRM030603
Abstract: 8Gb X16 8Gb DDP X08 X16 X08 4Gb X16 Vcc 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1'st ECh ECh ECh ECh 2'nd A5h D5h B5h , X16 4Gb QDP 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V 1.8V 3.3V ECh ECh ACh DCh BCh CCh , -Stack The Same as 2Gb DDP, because this is Dual-CE. 1.8V AAh 3.3V 2Gb DAh ECh XXh 1.8V DDP BAh X16 3.3V CAh 1.8V A1h X08 3.3V F1h 1Gb ECh XXh 1.8V B1h X16 3.3V C1h I/O8~I/O15 -
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512MB ddp 16GB Nand flash NAND FLASH 512MB NAND FLASH DDP NAND FLASH QDP x-08
Abstract: , 1.8V/1.8V Now HY5PS1G1631CFR-25 FBGA(84ball) 8Bank, 1.8V/1.8V Now 600MHz (1.6ns , /2.0V Now H5PS5162FFR-20L FBGA(84ball) 4Bank, 1.8V/1.8V Now 400MHz (2.5ns) H5PS5162FFR-25C FBGA(84ball) 4Bank, 1.8V/1.8V Now 500MHz (2.0ns) HY5PS121621CFP-2 FBGA , /2.0V Now 400MHz (2.5ns) HY5PS121621CFP-25 FBGA(84ball) 4Bank, 1.8V/1.8V Now 350MHz (2.8ns) HY5PS121621CFP-28 FBGA(84ball) 4Bank, 1.8V/1.8V Now 300MHz (3.3ns) 16Mx16 FBGA Hynix Semiconductor
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H5GQ1H24MJR-T2C H5GQ1H24MJR-T0C HY5PS1G1631CFP H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b HY5PS121621C-FP25 300MH HY5DU561622ETP-33 275MH HY5DU561622ETP-36 250MH HY5DU561622ETP-4
Abstract: current consumption I PACKAGE OUTLINE NJG1143UA2 +2.85V typ. (+1.5V~+3.6V) +1.8V typ. (+1.5V~+3.6V) 4.0mA typ. @VDD=2.85V, VCTL=1.8V 7uA typ. @VDD=2.85V, VCTL=0V, Stand-by mode G High gain 20.0dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G Low noise figure 0.70dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G High input IP3 -2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575+1575.1MHz G Stand-by function G Small package size EPFFP-A2 New Japan Radio
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NJG1143 EPFFP6-A2 10-1IDD 1575MH
Abstract: C 0 1 - W = 4.5V to 5.5V = 2.5V to 5.5V = 1.8V to 5.5V = 1.8V to 3.6V = 2.7V to 3.6V D W , 0.9 to 1.8V" 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 250kHz at 1.8 to 3.6V; 100kHz 0.9 to 1.8V; lower 1Kb WP 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at STMicroelectronics
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rohm Cross Reference rohm cross AKM CROSS HN58X2402FPI BR9080 M93C46 cross reference CREEAKM/0602
Abstract: voltage "Low current consumption NJG1133MD7 +2.8V typ. +1.8V typ. 2.3mA typ. @High Gain Mode 48Î , V Operating voltage SYMBOL CONDITIONS IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA 1.5GHz Band High Gain mode IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA Operating New Japan Radio
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LQP03T GRM03
Abstract: voltage Low current consumption NJG1133MD7 +2.8V typ. +1.8V typ. 2.3mA typ. @High Gain Mode 48A , SYMBOL CONDITIONS IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA 1.5GHz Band High Gain mode IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA Operating current 5 IDD5 VCTL3=0V, RF OFF - New Japan Radio
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Abstract: NJG1143UA2 +2.85V typ. (+1.5V~+3.6V) +1.8V typ. (+1.5V~+3.6V) 4.0mA typ. @VDD=2.85V, VCTL=1.8V 7A typ. @VDD=2.85V, VCTL=0V, Stand-by mode " High gain 20.0dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " Low noise figure 0.70dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " High input IP3 -2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f , Voltage (Low) VCTL Terminal Active mode VDD Terminal VDD=2.85V, VCTL=1.8V Active mode VDD Terminal VDD=1.8V New Japan Radio
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Abstract: Low control voltage G Low current consumption +2.85V typ. (+1.5V~+3.6V) +1.8V typ. (+1.5V~+3.6V) 4.0mA typ. @VDD=2.85V, VCTL=1.8V @VDD=2.85V, VCTL=0V, Stand-by mode 7uA typ. G High gain 20.0dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G Low noise figure 0.70dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz G High input IP3 -2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575+1575.1MHz G Stand-by function G Small package size EPFFP-A2 New Japan Radio
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346A 346A Noise Source dd s22
Abstract: (1.0mmx1.0mmx0.37mm)RoHS EPFFP6-A2 I G G G +2.85V typ. +1.8V typ. 4.0mA typ. 7uA typ. 20.0dB , RoHS I (+1.5V~+3.6V) (+1.5V~+3.6V) @VDD=2.85V, VCTL=1.8V @VDD=2.85V, VCTL=0V, @VDD=2.85V, VCTL=1.8V, f=1575MHz @VDD=2.85V, VCTL=1.8V, f=1575MHz @VDD=2.85V, VCTL=1.8V, f=1575MHz @VDD=2.85V, VCTL=1.8V, f=1575+1575.1MHz (: 1.0mmx1.0mmx0.37mm typ.) I (Top View) GND 5 6 4 RFIN , ) VCTL(L) VCTL 0 0 0.3 V 1 IDD1 , VDD VDD=2.85V, VCTL=1.8V - 4.0 6.5 New Japan Radio
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8973A PIN204
Abstract: VR1 VR2 R5325N001B W 1 2.8V 2.8V R5325N002B W 2 2.8V 1.8V R5325N003B W 3 1.8V R5325N004B W 4 R5325N005B W 5 R5325N006B W R5325N007B , 2.8V R5325N002A Y 2 2.8V 1.8V 3.0V R5325N003A Y 3 1.8V 3.0V 2.5V 3.0V R5325N004A Y 4 2.5V 3.0V 1.8V 2.5V R5325N005A Y 5 1.8V 2.5V 6 1.8V 3.3V R5325N006A Y 6 1.8V 3.3V W 7 2.5V 2.8V R5325N007A Ricoh
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ME-R5325N-071121 R5325N R5325N014 SC-74 R5325N001A R5325N008B R5325N008A
Abstract: IT 1.8V 1.8V 1.8V 8K 8K 8K ­ ­ ­ 60 (8x12) 60 (8x12) 84 (8x14) No No No , -5E, -37E, -3 IT -5E, -37E, -3 IT -5E, -37E, -3 IT 1.8V 1.8V 1.8V 8K 8K 8K ­ ­ ­ , , -37E, -3 IT -5E, -37E, -3 IT -5E, -37E, -3 IT -5E, -37E, -3 IT 1.8V 1.8V 1.8V 1.8V 8K 8K , MT48LC4M32LF -8 IT -75, -8, -10 IT -75, -8, -10 IT -75, -8, -10 IT -75, -8, -10 IT 1.8V 2.5V 3.3V , Megx16 8 Megx32 MT48H16M16LF MT48H8M32LF -75, -8 IT -75, -8 IT 1.8V 1.8V 8K 8K ­ ­ Micron Technology
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MT29F1G08aba MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT9V022 note MT9V125
Abstract: NJG1155UX2 1550~1615MHz 2.8 / 1.8V typ. 3.5 / 3.1mA typ. @VDD=2.8 / 1.8V, VCTL=1.8V 0.1ÂuA typ. @VDD=2.8 / 1.8V, VCTL=0V (Stand-by mode) 19.0 / 18.5dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V 0.75dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V EPFFP6-X2 (Package size: 1.1mm x 0.7mm x 0.37mm typ.) 2pcs. I PIN , =2.8V, VCTL=1.8V - 3.5 6.0 mA Supply Current2 (Active mode) IDD2 RF OFF, VDD=1.8V, VCTL=1.8V , 0.1 3.0 ÂuA Supply Current4 (Stand-by mode) IDD4 RF OFF, VDD=1.8V, VCTL=0V - 0.1 New Japan Radio
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1615MH N8973A NJG1145UA2
Abstract: component count G RoHS compliant and Halogen Free G MSL1 1550~1615MHz 2.8 / 1.8V typ. 3.5 / 3.1mA typ. @VDD=2.8 / 1.8V, VCTL=1.8V @VDD=2.8 / 1.8V, VCTL=0V (Stand-by mode) 0.1ÂuA typ. 19.0 / 18.5dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V 0.75dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V EPFFP6-X2 (Package size: 1.1mm x 0.7mm , CONDITIONS Supply Current1 (Active mode) IDD1 VDD=2.8V, VCTL=1.8V - 3.5 6.0 mA Supply Current2 (Active mode) IDD2 VDD=1.8V, VCTL=1.8V - 3.1 5.5 mA Supply Current3 New Japan Radio
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Abstract: compliant and Halogen Free, MSL1 1.8/ 2.8V typ. 2.6/3.3mA typ. @VDD=1.8/ 2.8V, VCTL=1.8V 0.1ÂuA typ. @VDD=1.8/ 2.8V, VCTL=0V (Stand-by mode) 17.5/18.5dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz, 1597~1606MHz 1.65/1.60dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz 1.75/1.70dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1597~1606MHz @VDD=1.8/ 2.8V, VCTL=1.8V, 85dBc typ. f=704~915MHz, relative to 1575MHz 75dBc typ , CONDITIONS RF OFF, VDD=2.8V, VCTL=1.8V RF OFF, VDD=1.8V, VCTL=1.8V RF OFF, VDD=2.8V, VCTL=0V RF OFF New Japan Radio
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OB122 NJG1157PCD HFFP10-CD 1606MH 915MH 1980MH
Abstract: Appendix B - ATtiny24V/ATtiny44V/ATtiny84V Automotive Specification at 1.8V This document contains information specific to devices operating at voltage between 1.8V and 3.6V. Only deviations with , and GND pins 200.0 mA 1.2 DC Characteristics TA = ­40° C to +85° C, VCC = 1.8V to 3.6V , +0.2VCC(1) V VIL Input low voltage, except XTAL1 and VCC = 1.8V to 3.6V RESET pin VIH Input high voltage, except XTAL1 and RESET pins VCC = 1.8V to 3.6V 0.7VCC(2) VCC + 0.5 V Atmel
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ATTINY84V 24V/AT 44V/AT 24/AT 44/AT
Abstract: NJU7512V-T 1200bps MSK NJU7512 1.8V 1200bps MSKMinimum Shift Keying 14.7456MHz NJU7512V (VDD=1.8V) 1.9mAtyp.() 1.8 5.5V 1200bps 14.7456MHz , =25 1 VDD1 1.8 - 5.5 V 2 VDD2 1.8 - VDD1 V Ta=25VSS=0VVDD=VDD1=VDD2=1.8V R1=0 IDD1 VDD=1.8V , - 1.9 2.2 mA IDD2 VDD=1.8V , - 0.01 10 uA IDD3 VDD=1.8V , - 1.1 1.2 -
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SSOP20 tda 9336 ic circuit 9336H NJU75 MX-1200 NX4025DA RTM 880 7456MH 6864MH
Abstract: Removable Media Interfaces [MMC/SD/SDIO] ­ IO Voltage: · mDDR/DDR2 IOs: 1.8V · Other IOs: 1.8V and 3.3V ­ , VDDS VDDS VDDS VDDS VDDS VDDS VOLTAGE [9] 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V HYS [10] LOAD (pF , VDDS VDDS VDDS VDDS VDDSHV 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V Anadigics
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AWU6616 AWU6616Q7 AWU6616P9
Abstract: voltage "Low current consumption NJG1133MD7 +2.8V typ. +1.8V typ. 2.3mA typ. @High Gain Mode 48A , SYMBOL CONDITIONS IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA 1.5GHz Band High Gain mode IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA Operating current 5 IDD5 VCTL3=0V, RF OFF - Texas Instruments
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SPRS550D 17X17* BGA 289 F-A18-F-A20 AM3517 AM3505 AM3517/05 128-C 75-MH
Abstract: . +1.8V typ. 2.3mA typ. @High Gain 48A typ. @Low Gain EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm , =0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF - 2.3 3.1 mA IDD5 VCTL3=0V, RF OFF - 48 85 A 1 ICTL1 VCTL1=1.8V - 5.5 8.5 A 2 ICTL2 VCTL2=1.8V - Yageo
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CECC4200 20 pf 6 kv ceramic capacitor VR0402/0603 VRS0805KR260251N
Abstract: SN65LVDS4 www.ti.com SLLSE15 ­ JULY 2011 1.8-V HIGH-SPEED DIFFERENTIAL LINE RECEIVER Check for Samples: SN65LVDS4 1 FEATURES Designed for Signaling Rates up to: ­ 500-Mbps Receiver DESCRIPTION The SN65LVDS4 is a single, low-voltage, differential line receiver in a small-outline QFN package , expressed in the units bps (bits per second) · · · · · · · · · Operates From a 1.8-V or 2.5-V Core , -V LVCMOS, 1.8-V LVCMOS) Based on External VDD Pin, Thus Eliminating External Level Translation VDD 10 Anadigics
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ALT6526 1700/1900/2100MH ALT6526P8 ALT6526P9
Abstract: C 0 1 - W = 4.5V to 5.5V = 2.5V to 5.5V = 1.8V to 5.5V = 1.8V to 3.6V = 2.7V to 3.6V D W , 0.9 to 1.8V" 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 250kHz at 1.8 to 3.6V; 100kHz 0.9 to 1.8V; lower 1Kb WP 1MHz at 4.5 to 5.5V; 500kHz at 2.0 to 4.5V; 250kHz 1.8V to 2.0V 1MHz at Anadigics
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Abstract: NJG1155UX2 1550~1615MHz 2.8 / 1.8V typ. 3.5 / 3.1mA typ. @VDD=2.8 / 1.8V, VCTL=1.8V @VDD=2.8 / 1.8V, VCTL=0V (Stand-by mode) 0.11A typ. 19.0 / 18.5dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V 0.75dB typ. @VDD=2.8 / 1.8V, VCTL=1.8V EPFFP6-X2 (Package size: 1.1mm x 0.7mm x 0.37mm typ.) 2pcs. 1 PIN , =2.8V, VCTL=1.8V - 3.5 6.0 mA Supply Current2 (Active mode) IDD2 RF OFF, VDD=1.8V, VCTL=1.8V , 0.1 3.0 1A Supply Current4 (Stand-by mode) IDD4 RF OFF, VDD=1.8V, VCTL=0V - 0.1 Texas Instruments
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500-M ISO/TS16949
Abstract: =4) Voltage = 1.8V Module Height = 1.2" www.samsung.com/semi/dram JANUARY 2009 DDR3 & DDR2 SDRAM , 64Mx72 M395T6553GZ4-CE6/F7/E7(50/60) (64M x8)*9 Lead free 667/800 1.8V 1 Now M395T2953GZ4-CE6/F7/E7(50/60) 1GB 128Mx72 (64M x8)*18 Lead free 667/800 1.8V 2 Now M395T2863QZ4-CE6/F7/E7(60/80/90) (128M x8)*9 Lead free 667/800 1.8V 1 Now M395T2863EH4-CE6/F7/E7(60/80/90) (128M x8)*9 Lead free & Halogen free 667/800 1.8V 1 Jan STMicroelectronics
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STMT05 LGA60 LGA-60 capacitive touchscreen controller CSP49 STMT05N1
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