NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2907A 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=10Vdc)* (IC=150mAdc, VCE=10Vdc)* 35 50 75 100 30 75 100 100 100 50 , Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) Transistor Frequency* (IC=50mAdc, VCE=20Vdc, f=100MHz ... | Original |
2 pages, |
IC 406 2N2907 a TRANSISTOR equivalent 2N2907A 2N2907A J 2N2907A 2N2907 TRANSISTOR 10Vdc 2N2907 ic 4521 datasheet abstract |
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| Abstract: ) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634 2N3634, 2N3636 2N3636 25 45 50 50 30 150 hFE IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3635 2N3635, 2N3637 2N3637 Collector-Emitter Saturation Voltage IC = , , VCE = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz ... | Original |
3 pages, |
2N3637 2N3636L 2N363 2N3634 2N3635L 2n3634 transistor 2N3634UB 2N3634L 10VDC 2N3635 2N3636 2N3636 transistor 2N3637UB MIL-PRF-19500/357 MIL-PRF-19500/357 abstract |
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| Abstract: RIM-OAC5M 5 VDC 3 VDC 8 VDC 1.0VDC 20mA 220 D55A RIM-OAC15M RIM-OAC15M 15 VDC 9 VDC 18 VDC 1.0VDC 16mA 1000 D55A RIM-OAC24M RIM-OAC24M 24 VDC 18 VDC 32 VDC 1.0VDC 14mA 2200 D55A RIM-OAC5AM 5 VDC 3 VDC 8 VDC 1.0VDC 20mA 220 D55A RIM-OAC15AM RIM-OAC15AM 15 VDC 9 VDC 18 VDC 1.0VDC 16mA 1000 D55A RIM-OAC24AM RIM-OAC24AM 24 VDC 18 VDC 32 VDC 1.0VDC 14mA 2200 D55A RIM-ODC5M 5 VDC 3 VDC 8 VDC 1.0VDC 20mA 220 ... | Original |
1 pages, |
RLY9141 RIM-ODC5 RIM-OAC5M RIM-OAC5A D55A RIM-OAC24 rim-odc5m NTE RLY9142 5A fuse 220 VAC to 12 VDC circuit diagram datasheet abstract |
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| Abstract: ) hFE(1) DC Current Gain (VCE=10Vdc, IC=5.0mAdc) - -hFE (2) VCE(sat) VBE fT (VCE=1.0Vdc, IC=500mAdc) (VCE=1.0Vdc, IC=1.0Adc) DC Current Gain (V CE=1.0Vdc, IC=500mAdc) BC868-16 BC868-16 , , V CE=10Vdc) (IC=1.0Adc, VCE=1.0Vdc) Transition Frequency (VCE=5.0Vdc, IC=10mAdc, f=100MHz) 85 ... | Original |
2 pages, |
BC868-25 BC868-16 BC868 BC868 abstract |
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| Abstract: CHARACTERISTICS hFE-1 hFE-2 h FE-3 h FE-4 V CE(sat) fT DC Current Gain (I C=1.0mAdc, V CE=1.0Vdc) DC Current Gain (I C=100mAdc, V CE=1.0Vdc) DC Current Gain (I C=300mAdc, VCE=1.0Vdc) DC Current Gain (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=600mAdc, IB =20mAdc) Transition Frequency (VCE=10Vdc, IC=50mAdc, f=30MHz) 290 1000 - 300 1000 - 300 1000 - ... | Original |
1 pages, |
M28S Equivalent M28S -55OC -55OC abstract |
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| Abstract: 90ohm�% 160mA 10Vdc 100M ohm 25Vdc 1.1ohmmax. -40癈 to 85癈 2 DLP31DN131ML4p 130ohm�% 120mA 10Vdc 100M ohm 25Vdc 1.6ohmmax. -40癈 to 85癈 2 DLP31DN201ML4p 200ohm�% 100mA 10Vdc 100M ohm 25Vdc 2.2ohmmax. -40癈 to 85癈 2 DLP31DN321ML4p 320ohm�% 80mA 10Vdc 100M ohm 25Vdc 3.5ohmmax. -40癈 to 85癈 2 DLP31DN441ML4p 440ohm�% 70mA 10Vdc 100M ohm 25Vdc 4.3ohmmax. -40癈 to 85癈 2 I !Caution/Notice ... | Original |
1 pages, |
DLP31DN441ML4 DLP31DN321ML4 DLP31DN201ML4 DLP31DN131ML4 DLP31DN 10VDC DLP31DN900ML4 datasheet abstract |
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| Abstract: , VCB=60Vdc Bias Cond. D, VEB= 4Vdc 75 6 50 VCE=10Vdc, IC=0.1mAdc VCE=10Vdc, IC=1.0mAdc VCE=10Vdc, IC=10mAdc VCE=10Vdc, IC=150mAdc, pulsed VCE=10Vdc, IC=500mAdc, pulsed IC=150mAdc, IB=15mAdc, pulsed , 100 30 VCE= 10Vdc,IC =1mAdc, f= 1kHz VCE= 20Vdc,IC =50mAdc, f=100MHz Vdc Vdc Vdc 50 nAdc , Short Circuit Forward Current Transfer Ratio Output Capacitance Input Capacitance VCB= 10Vdc, IE ... | Original |
2 pages, |
marking MCC 2N2222A 2N2222A JANTXV 2N2222A abstract |
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| Abstract: Unit (2) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 1.0Vdc 2N3250A 2N3250A 2N3251A 2N3251A IC = 1.0mAdc, VCE = 1.0Vdc 2N3250A 2N3250A 2N3251A 2N3251A 40 80 hFE 45 90 IC = 10mAdc, VCE = 1.0Vdc 2N3250A 2N3250A 2N3251A 2N3251A 50 100 IC = 50mAdc, VCE = 1.0Vdc 2N3250A 2N3250A 2N3251A 2N3251A 15 30 Collector-Emitter , Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3250A 2N3250A 2N3251A 2N3251A Magnitude , 20Vdc, f = 100kHz 2N3250A 2N3250A 2N3251A 2N3251A Output Capacitance |hfe| VCB = 10Vdc, IE = 0, 100 kHz f ... | Original |
2 pages, |
2N3251AUB 2N3250A 2N3251A MIL-PRF-19500/323 MIL-PRF-19500/323 abstract |
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| Abstract: Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810 2N3810 , 10Vdc, f = 1.0kHz Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz , Unit Noise Figure IC = 100Adc, VCE = 10Vdc, f = 100Hz, RG = 3.0k 2N3810 2N3810, L, U F1 7.0 IC = 100Adc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0k 2N3810 2N3810, L, U F2 3.0 IC = 100Adc, VCE = 10Vdc, f = 10kHz, RG = 3.0k 2N3810 2N3810, L, U F3 2.5 IC = 100Adc, VCE = 10Vdc, f = 10Hz to ... | Original |
3 pages, |
50vdc 10VDC 2N3810 JANTX 2N3810L 2N3810U 2N3811L 2N3811U 0118 transistor 2N3811 2N3810 MIL-PRF-19500 MIL-PRF-19500 abstract |
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| Abstract: Insulation Resistance Withstand (min.) Voltage 13dB 25dB 25dB 10Vdc 100mA 1000M 1000M ohm 30Vdc 2 to 7 7dB 20dB 25dB 10Vdc 100mA 1000M 1000M ohm 30Vdc 0 to 6 30dB - 20dB 10Vdc 20mA 1000M 1000M ohm 30Vdc 80MHz 2 to 7 25dB - 25dB 10Vdc 20mA 1000M 1000M ohm 30Vdc 200MHz 2 to 7 13dB 25dB 25dB 10Vdc 100mA 1000M 1000M ohm 30Vdc 2 to 7 7dB 20dB 25dB 10Vdc 100mA 1000M 1000M ohm 30Vdc Operating Temperature Range ... | Original |
2 pages, |
NFA21SL307X1A45 10VDC NFA21SL506 MARKING 201 NFA21SL506X1A48 NFA21SL207X1A45 datasheet abstract |
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| Abstract: 1/1 [PT124S-282 PT124S-282] [] [] :010KPa250MPa :1FS0.5FS0.25FS :033mV;0100mV :10VDC;1.5mA : 070 : -40125 :± 0.05FS/ 05FS/ :-2085 :±0.05%FS/ :-4090 :316 : :20050V DC 2004-6-10 ... | Original |
1 pages, |
PT124S-282 PT124S-282 abstract |
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| Abstract: TECHNICAL DATA NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/495 MIL-PRF-19500/495 Devices Qualified Level JAN JANTX JANTXV 2N5794 2N5794 2N5794U 2N5794U 2N5793 2N5793 MAXIMUM RATINGS Ratings Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C Symbol Value Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector ... | Original |
2 pages, |
2N5794U 2N5794 2N5793 2N5794 JANTXV MIL-PRF-19500/495 MIL-PRF-19500/495 abstract |
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| Abstract: TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 MIL-PRF-19500/496 Devices Qualified Level JAN JANTX JANTXV 2N5796 2N5796 2N5796U 2N5796U 2N5795 2N5795 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 60 60 5.0 600 Vdc Vdc Vdc mAdc One(1) @ TA = +250C Total Power Dissipation Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/ ... | Original |
2 pages, |
2N5796U 2N5796 2N5795 2N5796 JANTX MIL-PRF-19500/496 MIL-PRF-19500/496 abstract |
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| Abstract: TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 MIL-PRF-19500/496 Devices Qualified Level JAN JANTX JANTXV 2N5796 2N5796 2N5796U 2N5796U 2N5795 2N5795 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 60 60 5.0 600 Vdc Vdc Vdc mAdc (1) One @ TA = +250C Total Power Dissipation Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 ... | Original |
2 pages, |
2N5796U 2N5796 2N5795 MILPRF19500 milprf19500/496 MIL-PRF-19500/496 MIL-PRF-19500/496 abstract |
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| Abstract: TECHNICAL DATA NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/495 MIL-PRF-19500/495 Devices Qualified Level JAN JANTX JANTXV 2N5794 2N5794 2N5794U 2N5794U 2N5793 2N5793 MAXIMUM RATINGS Ratings Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C Symbol Value Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector ... | Original |
2 pages, |
2N5794U 2N5793 MILPRF19500 2N5794 MIL-PRF-19500/495 MIL-PRF-19500/495 abstract |
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| Abstract: TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 MIL-PRF-19500/496 Devices Qualified Level JAN JANTX JANTXV 2N5796 2N5796 2N5796U 2N5796U 2N5795 2N5795 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 60 60 5.0 600 Vdc Vdc Vdc mAdc (1) One @ TA = +250C Total Power Dissipation Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 ... | Original |
3 pages, |
2N5796U 2N5796 2N5795 MIL-PRF-19500/496 MIL-PRF-19500/496 abstract |
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| Abstract: MOTOROLA SC XSTRS/R F 15E D | L3b?554 G0flt.b74 b | X'Zl'X^ 3N155 3N155 - MAXIMUM RATINGS CASE 20-03, STYLE 2 TO-72 (TO-206AF) Rating Symbol Value Unit Drain-Source Voltage VDS ±35 Vdc Drain-Gate Voltage vdg ±50 Vdc Gate-Source Voltage VGS ±50 Vdc Drain Current Id 30 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C Pd 300 2.0 mW mW/°C Junction Temperature Range Tj -65 to +175 Storage Channel Temperature Range Tstq -65 to +176 °C MOSFET SWITCHING P-CHANNEL - ENHANCEMENT Refer ... | OCR Scan |
1 pages, |
3n157 3N155 3N155 abstract |
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| Abstract: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 MIL-PRF-19500/423 Devices Qualified Level 2N5581 2N5581 JAN JANTX JANTXV 2N5582 2N5582 MAXIMUM RATINGS Ratings @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C Symbol Value Unit VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ... | Original |
2 pages, |
2N5581 2N5582 MIL-PRF-19500/423 MIL-PRF-19500/423 abstract |
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| Abstract: TECHNICAL DATA 2N4854 2N4854 JTX, JTXV 2N4854U 2N4854U JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/421 MIL-PRF-19500/421 DEVICES NPN/PNP SILICON COMPLEMENTARY SMALL-SIGNAL DUAL TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N4854 2N4854 / 2N4854U 2N4854U Units VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 40 60 5.0 600 Vdc Vdc Vdc mAdc One Total Transistor Device 0.30 0.60 1.0 2.0 -55 to +200 2N4854 2N4854 TO-78 Total ... | Original |
2 pages, |
2N4854U 2N4854 MIL-PRF-19500/421 2N4854 abstract |
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| Abstract: MOTOROLA SC XSTRS/R F 15E D | fc,3b?SS4 GGflbt.7fl 3 | f-^-ZS" MAXIMUM RATINGS Rating Symbol VolUB Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage Vdg ±35 Vdc Gate-Source Voltage vgs ±35 Vdc Drain Current Id 30 mAdc Total Device Dissipation @ Ty\ = 25°C pd 300 mW Derate above 26°C 1.7 mW/T Total Device Dissipation @ Tc = 25°C Po 800 mW Derate above 25°C 4.56 mW/°C Junction Temperature Range Tj 175 °C Storage Temperature Range Tsta -65 to +175 3N169 3N169 thru 3N171 3N171 CASE 20-03, STYLE 2 TO-72 ... | OCR Scan |
2 pages, |
3N171 3N170 2N4351 3N169 2N4351 MOTOROLA datasheet abstract |
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| 12" probe with 0/10Vdc output to 10 Vdc output N to +10 Vdc output N www.datasheetarchive.com/files/omega/newport/pricelst/p27.htm |
Omega | 31/03/2000 | 35.06 Kb | HTM | p27.htm |
| ohm & 1kohm 0.00392, 0 to 20 mA, 4 to 20 mA, 0 to 100mV, 0 to 1V, 0 to 10Vdc. Alarm 10Vdc @20mA (for use with external SSR -Isolated 1 to 10Vdc or 0-20mA @500ohm max Pulsed 10Vdc @20mA (use for external SSR www.datasheetarchive.com/files/omega/newport/manuals/icn7700/order.htm |
Omega | 25/04/2000 | 20.65 Kb | HTM | order.htm |
| 10Vdc @ 20mA (use for external SSR) N -isolated 1 to 10Vdc or 0 to 20mA @500 ohm max Pulsed 10Vdc @ 20mA (use for external SSR , N, DIN-J, RTD 100ohm with alpha of 0.00385 or 0.00392 0-20mA, 0-100mV, 0-1V, and 0-10Vdc. Standard Alarm 1 output includes SPST relay, 5A @ 120Vac, 3A @ 240Vac www.datasheetarchive.com/files/omega/newport/pricelst/p12.htm |
Omega | 31/03/2000 | 31.78 Kb | HTM | p12.htm |
| -特長 1. -部電極がメッキ構造であるため、は"だ耐熱性に優れ ています。 2. 定格電圧は５００／'００／'００／５０／'５／'- ／'０（Ｖｄｃ）で、温度特性はＣ-からＳＬまでの温 度補償"とＢ、Ｒ、Ｆ特性などの高誘電率系があります 。 3. チッ-サイズは、ＧＲＭ"-［'．０（Ｌ）-０．５（ Ｗ）-０．５（Ｔ）］からＧＲＭ"''-［"．'（Ｌ ）-'．-（Ｗ）-'．'５（Ｔ）］までのものがあり ます。 4. は"だ-り付'は、フロ'法とリフロ'法が適"できま す。 5. 形状寸法が統一されておりかつ高精度であるため、自動 マウントの際、高い信頼性が-られます。 6. ......形...は、チッ-サイズに応じて、紙テ'"ングまた は-ラスチックテ'"ングとなります。ＧＲＭ"-／Ｇ ＲＭ"９／ＧＲＭ"０（Ｔ＝０．-，'．'５）につい ては、バルクケ'スでの供給も可能です。 -"" 一般電子機器 www.datasheetarchive.com/files/murata/products/data/a18x/c2j01f01.txt |
Murata | 06/09/1996 | 0.8 Kb | TXT | c2j01f01.txt |
| SSR and pulsed 10 Vdc @ 20 mA (for use with external SSR Relay and pulsed 10 Vdc @ 20 mA (for use with external SSR Two pulsed 10 Vdc @ 20 mA (for use with external SSR of process value; 0 to 10 Vdc or 0-20 mA @ 500 ohm max. and SSR Analog Output 0 to 10 Vdc or 0-20 mA @ 500 ohm max. and Relay www.datasheetarchive.com/files/omega/newport/products/temprtur/iprice.htm |
Omega | 18/04/2000 | 26.24 Kb | HTM | iprice.htm |
| SSR and pulsed 10 Vdc @ 20 mA (for use with external SSR and pulsed 10 Vdc @ 20 mA (for use with external SSR Two pulsed 10 Vdc @ 20 mA (for use with external of process value; 0 to 10 Vdc or 0-20 mA @ 500 ohm max. and Analog Output 0 to 10 Vdc or 0-20 mA @ 500 ohm www.datasheetarchive.com/files/omega/newport/products/strsstrn/isprice.htm |
Omega | 18/04/2000 | 25.91 Kb | HTM | isprice.htm |
| NAMUR (proximity) ; Analog 0-5 or 10 Vdc; Analog 4-20 mA; NPN/PNP (3-wire -collectors, 30 V/1 V @ 150 mA; Dual 7-amp relays, 4- 20 mA Analog Output, 0-10 Vdc relays; 4-20 mA Analog Output; 0-10 Vdc Analog Output Excitation: 12 NAMUR (proximity); Analog 0-5 or 10 Vdc; Analog 4-20 mA; NPN/PNP (3-wire ; 4-20 mA Analog Output; 0-10 Vdc Analog Output www.datasheetarchive.com/files/omega/newport/products/freqrate/index.htm |
Omega | 20/06/2000 | 32.18 Kb | HTM | index.htm |
| , Alphanumeric Accuracy: ±0.005% Excitation: 10 Vdc Accuracy: ±0.005% Excitation: 10 Vdc @ 30 mA, 24 Vdc @ 25 m Excitation: 24 Vdc @ 25 mA; 12 Vdc @ 50 mA; 10 Vdc @ 120 mA; 5 Vdc @ 60 m Input: 4-20 mA; 0-5 Vdc; 1-5 Vdc; 0-10 Vdc Accuracy: ±0.05%R±1 lsd Excitation: 10 Vdc @ 50 m www.datasheetarchive.com/files/omega/newport/products/process/index.htm |
Omega | 20/06/2000 | 86.47 Kb | HTM | index.htm |
| V- VV1 VV0 16 0.00002 R_R11 N4988881 N4988881 N4988881 N4988881 VV3 1Meg V_V16 104 0 10Vdc E_E3 12 0.1 G_G1 V+ VV1 VV0 16 0.00002 V_V15 102 0 10Vdc C_C3 VV2 V+ 0.0055p www.datasheetarchive.com/files/intersil/documents/el21/el2125.txt |
Intersil | 10/12/2011 | 5.74 Kb | TXT | el2125.txt |
| for 0 to 10Vdc, 0 to 20mA or 4 to 20mA. Input and output configuration is via RS-485 RS-485 RS-485 RS-485 configurable for 0 to 10Vdc, 0 to 20mA or 4 to 20mA. Input and output configuration is via www.datasheetarchive.com/files/omega/newport/pricelst/p5-6.htm |
Omega | 31/03/2000 | 40.63 Kb | HTM | p5-6.htm |