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"Junction FETs, JFETs"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: devices (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently , current saturation region. JFETs operating in the current satura- In summary, a junction FET consists , . Junction FETs In its most elementary form, this transistor consists of a piece of high-resistivity , junction formed along the channel. Implicit in this description is the fundamental difference between JFET Temic Semiconductors
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AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode n channel depletion MOSFET Depletion MOSFET 6D
Abstract: main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero Temic Semiconductors
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P-Channel Depletion Mosfets P-Channel Depletion mosFET N-Channel JFET FETs Siliconix JFET application note shockley N-Channel depletion mos
Abstract: covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs , applications. Package options JFETs from low cost plastic to metal TO-72 packages are available. The selector , consideration for new equipment design. JFETs ° P-CHANNEL TABLE 1. Switches and Choppers JFETs operate in , on many typical FETs. N-CHANNEL P-Channel JFETs V(BR)GSS Clss 'on 'off rds(on) vGS , '" 72 2 N3994 300 â'" 1.0 5.5 2.0 â'" 25 16 4.5 â'" â'" N-Channel JFETs 18 2N4859A 25 â'" 2.0 6.0 50 â -
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MPF970 MPF971 2N4856A 2N4856 N4859 2N4391 2N4391 MOTOROLA JFETs Junction FETs MPF4091 2N4091 N3993
Abstract: (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode , depend on different phenomena for their operation, and will be discussed separately. Junction FETs , this current is controlled by a voltage applied to a gate, which is a reversebiased pn junction , bipolar devices: when the JFET junction is reversebiased the gate current is practically zero, whereas Temic Semiconductors
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an101 siliconix Junction FETs JFETs n mosfet depletion jfet idss 10 ma vp -3 Depletion MOSFET Siliconix AN
Abstract: main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero Siliconix
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shockley diode application shockley diode datasheet diode shockley depletion mode fet depletion mode mosfet P-Channel Depletion Mosfet datasheet
Abstract: Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available , listing of small-signal JFETs intended for low-noise applications in the audio range. These devices , 15.0 15.0 22 The following is a listing of small signal JFETs that are intended for hi-frequency , metal-can and insertion type parts carried over to the new surface mount packages. Surface Mount RF JFETs , 25 10 MMBF4416LT1 M6A 2.0 1 100 4.5 7.5 15 30 10 1 Max. Surface Mount General-Purpose JFETs Allied Electronics Catalog
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MTP75N06HD Field Effect Transistors ft960 C847 20 watt audio amplifier p-channel jfet rf 2N5458 2N5457 2N5460 MTP20N20E MTP10N10E MTP12N10E
Abstract: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as , /5461/5462 P-channel J-FETs LIMITING VALUES In accordance with the Absolute Maximum System (IEC , storage temperature range -65 150 "C Ti junction temperature - 150 °C ±VdS , PARAMETER from junction to ambient R t h j- a K/W MGA004 400 P tot (m W ) 300 200 100 -
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2N5460/5461/5462 N5462 N5460
Abstract: . . . . . . . . . . . . . 5.1­20 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Diodes . . . . . . . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Hyper­Abrupt Junction . . . . . . 5.1­29 Schottky Diodes . . . . . . , and Diodes Field­Effect Transistors JFETs JFETs operate in the depletion mode. They are , table is a listing of small­signal JFETs intended for low­noise applications in the audio range. These -
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BC547 sot package sot-23 BC337 BC547 2N2484 motorola zt751 MSB81T1 SOT-223 P1f 226AA 226AE 70/SOT MMBF2202PT1 MMBF2201NT1 MDC5000T1
Abstract: 5.1­17 Field­Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1­19 JFETs . . . . . , Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . 5.1­24 Tuning Diodes - Hyper­Abrupt Junction , Transistors, FETs and Diodes 5.1­18 Motorola Master Selection Guide Field­Effect Transistors JFETs JFETs operate in the depletion mode. They are available in both P­ and N­channel and are offered in , Table 30. JFET Low­Frequency/Low­Noise The following table is a listing of small­signal JFETs intended Motorola
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MBT3904DW9T1 MBT3904DW9 MVAM115 marking 6AA SOD transistor 2N4125 motorola p1f 206AA 205AD MDC3105LT1
Abstract: of the terminals is controlled by a voltage potential applied to the third. For a junction , nchannel JFETs and positively for pchannel), the resistance will also increase. When the drain current is , gate-channel PN junction must be slightly forward-biased before any significant amount of gate current flows , the forward conduction of the gate-to-channel junction when the drain signal exceeds the negative , supply between the resistor junction and the FET gate will overcome this problem. The circuit is shown Temic Semiconductors
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AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR
Abstract: SOT-23 TRANSISTORS (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking dB Typ f MHz mmhos Min Y»s @ V ds mmhos Max Volts , General-Purpose JFETs The following table is a listing of surface mount small-signal general purpose FETs. These , P-CHANNEL MMBF5460LT1 M6E 40 1.0 4.0 15 1.0 5.0 10 Chopper/Switches, JFETs The following is a listing -
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jfets P-Channel RF Amplifier MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF5484LT1 MMBFS486LT1 MMBF5457LT1
Abstract: and P-Channel Single AN74-4 Audio-Frequency Noise Char, of junction FETs. To give you an idea how this guide works , ; typically = 2 for N-channel junction FET) 9fs 9fso -
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siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03
Abstract: 5.1­17 Field­Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1­19 JFETs . . . . . , Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . 5.1­24 Tuning Diodes - Hyper­Abrupt Junction , Selection Guide Field­Effect Transistors JFETs JFETs operate in the depletion mode. They are available , table is a listing of small­signal JFETs intended for low­noise applications in the audio range. These , of small­signal JFETs that are intended for hi­frequency applications. These are candidates for VHF -
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MMBF4856 BC337/BC327 t6661 MPS6595 bipolar transistor bc107 BS107 MOTOROLA MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1
Abstract: AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto , (JFETs included) are valid only for that manufacturer. Because of the vagaries in design, the product of , as a switch. b. SPICE identifies depletion-mode FETs (all JFETs, regardless of polarity) by a Temic Semiconductors
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2N4416 Siliconix J310 GASFET 2N4339 Spice J111 spice model Siliconix AN104 jfet spice model SST4416 2N4339 SST202 SST310 SST176
Abstract: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. SPICE is , for any semiconductor (JFETs included) are valid only for that manufacturer. Because of the vagaries , only important when modeling the JFET as a switch. b. SPICE identifies depletionmode FETs (all JFETs Temic Semiconductors
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an104 siliconix TO-226A U421 jfet SST310 spice model SILICONIX 2N4391 siliconix fets 2N5116
Abstract: between two of the terminals is controlled by a voltage potential applied to the third. For a junction , n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current , gate-channel PN junction must be slightly forward-biased before any significant amount of gate current flows , forward conduction of the gate-to-channel junction when the drain signal exceeds the negative gate bias , junction and the FET gate will overcome this problem. The circuit is shown in Figure 7 and allows the gate Siliconix
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datasheet jfet J111 transistor VCR4N 2N5486 vcr VCR2N Siliconix N-Channel JFETs N CHANNEL jfet
Abstract: terminals is controlled by a voltage potential applied to the third. For a junction fieldeffect transistor , to zero volts (VGS = 0). If the gate voltage is increased (negatively for nchannel JFETs and , because the gatechannel PN junction must be slightly forwardbiased before any significant amount of gate , junction when the drain signal exceeds the negative gate bias voltage. (07/11/94) AN105 Siliconix , 5 for the same rDS value. Use of a floating supply between the resistor junction and the FET gate Temic Semiconductors
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jfet J111 transistor J111
Abstract: AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , frequency performance of JFETs versus bipolars. ­ Curves comparing noise current and voltage. ­ , low-noise JFETs, it increases approximately 3 dB per octave in bipolars starting below 100 Hz. Thermal , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction , channel junction. It is defined as 4kTB Rp (4) where Rp is the real part of the Siliconix
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jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 transistor equivalent table chart 2n930 equivalent
Abstract: AN106 Siliconix LowNoise JFETs Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowfrequency , types are described in Table 1. Comparative low frequency performance of JFETs versus bipolars , frequency and is usually referred to as 1/f" noise. Negligible in lownoise JFETs, it increases approximately , corner frequency is normally above 10 kHz in JFET devices. Figure 2. Characteristics of Junction FET Temic Semiconductors
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transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent 2N5088 SIMILAR transistor j201 Siliconix "low noise jfet"
Abstract: two of the terminals is controlled by a voltage potential applied to the third. For a junction , n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current , gate-channel PN junction must be slightly forward-biased before any significant amount of gate current flows , forward conduction of the gate-to-channel junction when the drain signal exceeds the negative gate bias , between the resistor junction and the FET gate will overcome this problem. The circuit is shown in Figure Temic Semiconductors
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PN4119A application note Siliconix N-Channel JFET geometry J111 fet third quadrant operation transistor jfet
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