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"Junction FETs, JFETs"

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Abstract: devices (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently , current saturation region. JFETs operating in the current satura- In summary, a junction FET consists , . Junction FETs In its most elementary form, this transistor consists of a piece of high-resistivity , junction formed along the channel. Implicit in this description is the fundamental difference between JFET ... Temic Semiconductors
Original
datasheet

5 pages,
73.23 Kb

Siliconix N-Channel JFET diode shockley "Junction FETs, JFETs" AN101 shockley diode application Junction P FET depletion p mosfet JFETs Junction FETs Junction FETs JFETs list of fet N-Channel JFET FETs P-Channel Depletion Mosfets list of n channel MOSFET Depletion MOSFET 6D n channel depletion MOSFET shockley diode P-Channel Depletion Mode FET list of n channel fet p channel depletion mosfet TEXT
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Abstract: main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero ... Temic Semiconductors
Original
datasheet

5 pages,
63.07 Kb

Depletion MOSFET P-Channel Depletion-Mode depletion n channel mosfet depletion p mosfet diode shockley JFETs Junction FETs Junction FETs JFETs N-Channel depletion mos shockley shockley diode p channel depletion mosfet list of n channel fet AN101 Siliconix JFET application note AN101 N-Channel JFET FETs AN101 P-Channel Depletion mosFET AN101 n channel depletion MOSFET AN101 P-Channel Depletion Mosfets AN101 P-Channel Depletion Mode FET AN101 AN101 AN101 TEXT
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Abstract: covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs , applications. Package options JFETs from low cost plastic to metal TO-72 packages are available. The selector , consideration for new equipment design. JFETs ° P-CHANNEL TABLE 1. Switches and Choppers JFETs operate in , on many typical FETs. N-CHANNEL P-Channel JFETs V(BR)GSS Clss 'on 'off rds(on) vGS , €” 72 2 N3994 N3994 300 — 1.0 5.5 2.0 — 25 16 4.5 — — N-Channel JFETs 18 2N4859A 2N4859A 25 — 2.0 6.0 50 â ... OCR Scan
datasheet

1 pages,
59.25 Kb

"JFETs operate in the depletion mode" 2N4391 2N4856 motorola 2N4856A 2N4859A jfets MPF4391 N4859 2N4856 MPF971 2N4091 MPF4091 "P-Channel JFETs" JFETs Junction FETs MPF970 2N4391 MOTOROLA P-Channel Depletion Mosfets P-Channel Depletion Mode FET TEXT
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Abstract: (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode , depend on different phenomena for their operation, and will be discussed separately. Junction FETs , this current is controlled by a voltage applied to a gate, which is a reversebiased pn junction , bipolar devices: when the JFET junction is reversebiased the gate current is practically zero, whereas ... Temic Semiconductors
Original
datasheet

5 pages,
97.75 Kb

transistor working principle "P-Channel JFET" semiconductor AN101 Depletion MOSFET 6D fet free Junction P FET "Junction FETs, JFETs" Siliconix jfet Application Note Siliconix AN Depletion MOSFET P-Channel Depletion Mosfets jfet idss 10 ma vp -3 JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET N-Channel JFET FETs an101 siliconix P-Channel Depletion Mode FET p channel depletion mosfet TEXT
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Abstract: main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero ... Siliconix
Original
datasheet

5 pages,
41.68 Kb

N-Channel JFET FETs list of P channel power mosfet mosfet depletion P-Channel Depletion Mosfet datasheet depletion mode mosfet p channel depletion mosfet Depletion MOSFET depletion mode fet shockley diode shockley jfet idss 10 ma vp -3 list of n channel fet AN101 n channel depletion MOSFET AN101 shockley diode datasheet AN101 shockley diode application AN101 P-Channel Depletion Mode FET AN101 shockley diode AN101 P-Channel Depletion Mosfets AN101 AN101 AN101 TEXT
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Abstract: Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available , listing of small-signal JFETs intended for low-noise applications in the audio range. These devices , 15.0 15.0 22 The following is a listing of small signal JFETs that are intended for hi-frequency , metal-can and insertion type parts carried over to the new surface mount packages. Surface Mount RF JFETs , 25 10 MMBF4416LT1 MMBF4416LT1 M6A 2.0 1 100 4.5 7.5 15 30 10 1 Max. Surface Mount General-Purpose JFETs ... Allied Electronics Catalog
Original
datasheet

1 pages,
80.91 Kb

RF power transistors 3000 BS17 JFET with Yos MTP75N06HD P-Channel Depletion Mode FET P-Channel Depletion Mosfets p-channel jfet rf 20 watt audio amplifier C847 ft960 Field Effect Transistors N-Channel JFET FETs TEXT
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Abstract: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460 2N5460; 2N5461 2N5461; 2N5462 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as , /5461/5462 P-channel J-FETs LIMITING VALUES In accordance with the Absolute Maximum System (IEC , storage temperature range -65 150 "C Ti junction temperature - 150 °C ±VdS , PARAMETER from junction to ambient R t h j- a K/W MGA004 MGA004 400 P tot (m W ) 300 200 100 ... OCR Scan
datasheet

3 pages,
56.08 Kb

TEXT
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Abstract: . . . . . . . . . . . . . 5.1­20 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Diodes . . . . . . . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Hyper­Abrupt Junction . . . . . . 5.1­29 Schottky Diodes . . . . . . , and Diodes Field­Effect Transistors JFETs JFETs operate in the depletion mode. They are , table is a listing of small­signal JFETs intended for low­noise applications in the audio range. These ... Original
datasheet

43 pages,
550.52 Kb

2N4401 surface mount motorola transistor 2N2907A MMBF4856LT1 Characteristic curve BC107 marking code m1j transistor 2N2222A motorola m6 sot-23 pinout MSB81T1 transistor marking 3em 2N2222A plastic package P1F motorola surface mounted m6 transistor MMBF4856 SOT-223 P1f zt751 2N2484 motorola BC337 BC547 BC547 sot package sot-23 TEXT
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Abstract: 5.1­17 Field­Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1­19 JFETs . . . . . , Tuning Diodes - Abrupt Junction . . . . . . . . . . . . . 5.1­24 Tuning Diodes - Hyper­Abrupt Junction , Transistors, FETs and Diodes 5.1­18 Motorola Master Selection Guide Field­Effect Transistors JFETs JFETs operate in the depletion mode. They are available in both P­ and N­channel and are offered in , Table 30. JFET Low­Frequency/Low­Noise The following table is a listing of small­signal JFETs intended ... Motorola
Original
datasheet

42 pages,
651.6 Kb

2n4401 die bc327 pnp bc517 "ct" MMBTH69 motorola p1f NPN Transistor BC549B BC547 audio CT BC547 TRANSISTOR PIN DIAGRAM BC415 PNP TRANSISTOR MPS6428 MMBF5486LT1 MBT3904DW9 marking 6AA SOD zt751 transistor 2N4125 MBT3904DW9T1 MSB81T1 BC337 BC547 TEXT
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Abstract: of the terminals is controlled by a voltage potential applied to the third. For a junction , nchannel JFETs and positively for pchannel), the resistance will also increase. When the drain current is , gate-channel PN junction must be slightly forward-biased before any significant amount of gate current flows , the forward conduction of the gate-to-channel junction when the drain signal exceeds the negative , supply between the resistor junction and the FET gate will overcome this problem. The circuit is shown ... Temic Semiconductors
Original
datasheet

6 pages,
94.59 Kb

VOLTAGE DEPENDENT RESISTOR details 2N5486 vcr AN105 J111 PN4119A Siliconix "fet" Siliconix JFET application note SST111 VCR4N VCR2N transistor jfet SST5486 SST4119 2N5486 jfet transistor for VCR application note jfet J111 transistor fet vcr compatible TEXT
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