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"Ferroelectric RAM"

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Abstract: New FeRAM Embedded IC MN63Y1005 MN63Y1005 for Contactless IC card and Tag I Overview MN63Y1005 MN63Y1005 is a nonvolatile ferroelectric random access memory (FeRAM) embedded IC for contactless IC card and tag. The IC is powered by radio waves from a read/write unit and for incorporating nonvolatile ferroelectric RAM, the IC can retain information even when power is lost. And it realizes high reliability with the , Crystal model of ferroelectric RAM G Batteryless, wireless, contactless This IC is powered by radio ... Original
datasheet

2 pages,
50.18 Kb

NRZL block diagram M00364BE ferroelectric MN63Y1005 FeRAM "Ferroelectric RAM" MN63Y1005 abstract
datasheet frame
Abstract: MAR ü r^MTRON FM 1408S 1408S FRAM® Memory 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features m 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b - CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells - Fully Synchronous Symmetrical Operation - 150ns Maximum Read Access - 300ns Maximum Read/Write Cycles - Minimum of 108 Read/Write Endurance Cycles - , dual-mode ferroelectric RAM, or FRAM® product. This memory is the plug replacement for standard EEPROM, SRAM ... OCR Scan
datasheet

8 pages,
352.68 Kb

mtron "Ferroelectric RAM" FM1408S FM1408S abstract
datasheet frame
Abstract: FM1208SFRAM FM1208SFRAM® Memory Î^ IM IR O N Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write Cycle Time - 10 Billion ( 101 0 ) Cycle Read/Write Endurance On Chip Data Protection Circuit 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification , 0-70°C Ambient Operating Temperature Range Description The FM1208S FM1208S is a bytewide ferroelectric RAM ... OCR Scan
datasheet

8 pages,
192.62 Kb

FM1208SFRAM FM1208SFRAM abstract
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Abstract: r^ M T R O N Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 CMOS Technology1with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 180ns Read Access - 320ns Read/Write Cycle Time Ultra-High Endurance - 10 Billion (10K1) Read/Write Cycle Endurance On Chip Data Protection Circuit FM1608S FM1608S FRAM® Memory 65,536-Bit Nonvolatile Ferroelectric RAM , ferroelectric RAM, or FRAM® product, organized as 8k x 8. FRAM memory products from Ramtron combine the read ... OCR Scan
datasheet

7 pages,
195.26 Kb

FM1608S FM1608S abstract
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Abstract: I FM1208SFRAM FM1208SFRAM® Memory r^ p M T R O N Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 250ns Read Access - 500ns Read/Write Cycle Time - Minimum of 108 Endurance Cycles On Chip Data , ,096-Bit Nonvolatile Ferroelectric RAM Product Specification Description The FM 1208S 1208S is a bytewide ferroelectric RAM, or FRAM® product organized as 512 x 8. FRAM memory products from Ramtron combine the read ... OCR Scan
datasheet

8 pages,
274.68 Kb

FM1208SFRAM FM1208SFRAM abstract
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Abstract: SIMTRON FM1208S FM1208S FRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features - 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 - CMOS Technology with Integrated Ferroelectric Storage Cells - Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write Cycle Time - 10 Billion (IO10) Cycle Read/Write Endurance - On Chip Data Protection Circuit I 10 Year , Ambient Operating Temperature Range Description The FM1208S FM1208S is a bytewide ferroelectric RAM, or FRAM ... OCR Scan
datasheet

8 pages,
227.68 Kb

755s015 "Ferroelectric RAM" FM1208SFRAM FM1208SFRAM abstract
datasheet frame
Abstract: FM1208S FM1208S FRAM ® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 s CMOS Technology with Integrated Ferroelectric Storage Cells s Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write Cycle Time - 10 Billion (1010) Cycle Read/Write Endurance s On Chip Data Protection Circuit s , ferroelectric RAM, or FRAM® product, organized as 512 x 8. FRAM memory products from Ramtron combine the read ... Original
datasheet

8 pages,
57.75 Kb

FM1208S ferroelectric ram ferroelectric RAM word-line driver 1994 "Ferroelectric RAM" FM1208S abstract
datasheet frame
Abstract: r^MTRON FM1208S FM1208S FRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features - 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 - CMOS Technology with Integrated Ferroelectric Storage Cells - Fully Synchronous Operation - 200ns Read Access - 400ns Read , I 0-70°C Ambient Operating Temperature Range Description The FM1208S FM1208S is a bytewide ferroelectric RAM, or FRAM® product, organized as 512 x 8. FRAM memory products from Ramtron combine the read/write ... OCR Scan
datasheet

8 pages,
228.32 Kb

mtron "Ferroelectric RAM" FM1208S datasheet abstract
datasheet frame
Abstract: FM1208S FM1208S FRAM® Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write Cycle Time - 10 Billion (101 0 ) Cycle Read/Write Endurance On Chip Data Protection Circuit 110 Year , Operating Temperature Range The FM1208S FM1208S is a bytewide ferroelectric RAM, or FRAM® product, organized as ... OCR Scan
datasheet

8 pages,
377.24 Kb

FM1208S FM1208S abstract
datasheet frame
Abstract: FM1608S FM1608S FRAM ® Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 s CMOS Technology with Integrated Ferroelectric Storage Cells s Fully Synchronous Operation - 180ns Read Access - 320ns Read/Write Cycle Time s Ultra-High Endurance - 10 Billion (1010) Read/Write Cycle Endurance s On Chip Data , is a bytewide ferroelectric RAM, or FRAM® product, organized as 8k x 8. FRAM memory products from ... Original
datasheet

7 pages,
58.24 Kb

RAMTRON ferroelectric ram FM1608S "Ferroelectric RAM" FM1608S abstract
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Datasheet Content (non pdf)

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Ferro-electric RAM - FeRAM
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2379.htm
Infineon 26/10/2000 19.82 Kb HTM pro~2379.htm
Ferro-electric RAM - FeRAM Non-volatile Random Access Memory based on Ferro materials on Silicon
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/prod~557.htm
Infineon 26/10/2000 16.47 Kb HTM prod~557.htm
No abstract text available
www.datasheetarchive.com/download/0000000-710130ZC/eeprom-parallel-sync.xls
Memory 21/03/1997 35.5 Kb XLS eeprom-parallel-sync.xls
analysis and device/process qualification including non-volatile ferroelectric RAM products and 4M DRAMs.
www.datasheetarchive.com/files/scenix/htdocs/logs2/resume_log
No abstract text available
www.datasheetarchive.com/download/0000000-810130ZC/eeprom-serial.xls
Memory 21/03/1997 4896.5 Kb XLS eeprom-serial.xls