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M430FR5739SRHATEP Texas Instruments MSP430FR5739 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO, 10-bit ADC & comparator 40-VQFN -55 to 85 pdf Buy Buy
V62/14644-01XE Texas Instruments MSP430FR5739 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO, 10-bit ADC & comparator 40-VQFN -55 to 85 pdf Buy Buy

"Ferroelectric RAM"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: nonvolatile static RAM designed to demonstrate the capability of ferroelectric technology when integrated with , much flexibility as possible in understanding the capabilities of ferroelectric devices. The static RAM , a conventional static RAM. Three of the remaining 10 pins are connected to separate ferroelectric , ferroelectric devices, (shadow portion of RAM) to the static RAM cell. Any violation of the timing parameters , static RAM read/write operation the 7 ferroelectric control pins are held at DC levels as follows: CRA = ... OCR Scan
datasheet

9 pages,
715.43 Kb

SCT T TEXT
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Abstract: Overview Figure 1. Perovskite Ferroelectric Crystal Established memory technologies are divided into , power continues to be an engineering challenge. Ferroelectric Random Access Memory or FRAM has attributes that make it the ideal nonvolatile memory. It is a true nonvolatile RAM. FRAM memory , Memory? FRAM is a RAM-based device that uses the ferroelectric effect for a storage mechanism. This is , floating gate technology. The ferroelectric effect is the ability of a material to store an electric ... Ramtron International
Original
datasheet

4 pages,
59.37 Kb

ferroelectric TEXT
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Abstract: 's Ferroelectric Random Access Memory (FRAM) microcontroller (MCU), which features embedded, non-volatile FRAM , can be configured either as Read-Only Memory (ROM) or RandomAccess Memory (RAM). The FRAM , Memory Technology0 Introduction to FRAM FRAM is a non-volatile memory that uses a ferroelectric thin , ) shown in Figure 1. When ferroelectric characteristics exhibit a hysteresis loop, FRAM can achieve a , C-V characteristics. However, because the ferroelectric capacitor shifts the positions of atoms, it ... Fujitsu
Original
datasheet

9 pages,
1389.48 Kb

MB95R FUJITSU FRAM FRAM Memory 0x61 fram rfid MB95R203 fram TEXT
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Abstract: Preliminary FM1808 FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM , retention at 85° C · NoDelayTM write · Advanced high-reliability ferroelectric process Superior to BBSRAM , FM1808 FM1808 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data , other types of nonvolatile memory. In-system operation of the FM1808 FM1808 is very similar to other RAM based ... Ramtron International
Original
datasheet

1 pages,
21.19 Kb

FM1808 TEXT
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Abstract: w w .ram ton.com Features Nonvolatile B I O 10 Endurance No Write delay Low Power Industrial Temp Range Description Ramtron's parallel ferroelectric random access memories, or FRAM® memories , , user programmable data/features, and slate upon power loss. With Ramtron's ferroelectric technology , materials, processing, and design to manufacture solid state ferroelectric memories. The result of these , benefits compared to existing products. RAMTS00001 RAMTS00001 The ferroelectric effect is the ability of a material to ... OCR Scan
datasheet

2 pages,
145.59 Kb

SCK SDA WP eeprom 24C16 5 pin 24c16 wp 24c16 5 pin pinout CHIP 8-PIN 24c16 TEXT
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Abstract:  Preliminary FM25640 FM25640 64Kb F RAM Serial Memory RaMTRON Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (IO10) read/writes • 10 year data retention at 85° C • NoDelay™ write • Advanced high-reliability ferroelectric , DIP Description The FM25640 FM25640 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a ... OCR Scan
datasheet

1 pages,
73.05 Kb

FM25640-S FM25640-P FM25640 TEXT
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Abstract: RAMTRON CORP ^SE D 7S5SG15 7S5SG15 PDÜÜO^b 12D I RAM r^lMTRON FM 1208FRAM 1208FRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features ■ 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous , °C Ambient Operating Temperature Range Description The FM 1208 is a bytewide ferroelectric RAM, or FRAM , semiconductor RAM with the nonvolatile retention of magnetic storage. The FM 1208 is manufactured in a 1.8 ... OCR Scan
datasheet

11 pages,
853.58 Kb

til 3010 7S5SG15 1208FRAM PJ 0416 1v TEXT
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Abstract: 1208SFRAM 1208SFRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features ■ 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation - 250ns Read Access - 500ns Read/Write Cycle Time , ferroelectric RAM, or FRAM® product organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM with the nonvolatile retention of magnetic storage. This ... OCR Scan
datasheet

8 pages,
198.07 Kb

1208S TEXT
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Abstract: MAR ü r^MTRON FM 1408S 1408S FRAM® Memory 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features m 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation - , FM 1408 dual-mode ferroelectric RAM, or FRAM® product. This memory is the plug replacement for , CMOS process and utilizes the bistable property of Ramtron's ferroelectric memory cells to store data ... OCR Scan
datasheet

8 pages,
352.68 Kb

til 081 mtron ferroelectric 1408S "Ferroelectric RAM" Ferroelectric RAM TEXT
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Abstract: FM1208S FM1208S FRAM® Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write , Operating Temperature Range The FM1208S FM1208S is a bytewide ferroelectric RAM, or FRAM® product, organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM ... OCR Scan
datasheet

8 pages,
377.24 Kb

Ferroelectric RAM FM1208S TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/0000000-710130ZC/eeprom-parallel-sync.xls
Memory 21/03/1997 35.5 Kb XLS eeprom-parallel-sync.xls
Infineon Technologies AG - Products - Ferro-electric RAM - FeRAM Ferro-electric RAM - FeRAM   Non-volatile Random Ferro RAM in preparation Ferro RAM is a new type of memory that will soon begin to move out of the the Ferro-electric effect Enables DRAM-like densities and speed Can be produced on the same
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2379.htm
Infineon 26/10/2000 19.82 Kb HTM pro~2379.htm
  Ferro-electric RAM - FeRAM Non-volatile Random
/datasheets/files/infineon/wwwinf~1.com/produc~1/prod~557.htm
Infineon 26/10/2000 16.47 Kb HTM prod~557.htm
No abstract text available
/download/0000000-810130ZC/eeprom-serial.xls
Memory 21/03/1997 4896.5 Kb XLS eeprom-serial.xls